JP2000196149A - Semiconductor light emitting device and its manufacture - Google Patents
Semiconductor light emitting device and its manufactureInfo
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- JP2000196149A JP2000196149A JP36883898A JP36883898A JP2000196149A JP 2000196149 A JP2000196149 A JP 2000196149A JP 36883898 A JP36883898 A JP 36883898A JP 36883898 A JP36883898 A JP 36883898A JP 2000196149 A JP2000196149 A JP 2000196149A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体発光装置に関
し、特にページプリンタ用感光ドラムの露光用光源など
に用いられる半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device used as an exposure light source for a photosensitive drum for a page printer.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】従来の
半導体発光装置を図４および図５に示す。図４は断面
図、図５は平面図である。図４および図５において、２
１は半導体基板、２２は一導電型半導体層、２３は逆導
電型半導体層、２４は個別電極、２５は共通電極であ
る。2. Description of the Related Art A conventional semiconductor light emitting device is shown in FIGS. FIG. 4 is a sectional view, and FIG. 5 is a plan view. 4 and 5, 2
1 is a semiconductor substrate, 22 is a semiconductor layer of one conductivity type, 23 is a semiconductor layer of the opposite conductivity type, 24 is an individual electrode, and 25 is a common electrode.
【０００３】半導体基板２１上に、一導電型半導体層２
２と逆導電型半導体層２３を一導電型半導体層２２より
も逆導電型半導体層２３が小面積となるように設けると
共に、この一導電型半導体層２２の露出部Ｒに共通電極
２５（２５ａ、２５ｂ）を接続して設け、逆導電型半導
体層２３に個別電極２４を接続して設けている。なお、
図４中、２６は窒化シリコン膜などから成る保護膜であ
る。また、図４に示すように、共通電極２５（２５ａ、
２５ｂ）は隣接する島状半導体層２２、２３ごとに異な
る群に属するように二群に分けて接続して設けられ、隣
接する島状半導体層２２、２３が同じ個別電極２４に接
続されている。[0003] On a semiconductor substrate 21, a one-conductivity type semiconductor layer 2 is formed.
2 and a semiconductor layer 23 of the opposite conductivity type are provided so that the semiconductor layer 23 of the opposite conductivity type has a smaller area than the semiconductor layer 22 of the one conductivity type, and the common electrode 25 (25a , 25b) are connected, and the individual electrodes 24 are connected to the opposite conductivity type semiconductor layer 23. In addition,
In FIG. 4, reference numeral 26 denotes a protective film made of a silicon nitride film or the like. Further, as shown in FIG. 4, the common electrodes 25 (25a, 25a,
25b) is provided by being connected to two groups so as to belong to different groups for the adjacent island-shaped semiconductor layers 22 and 23, and the adjacent island-shaped semiconductor layers 22 and 23 are connected to the same individual electrode 24. .
【０００４】この場合、逆導電型半導体層２３を例えば
ガリウム砒素やアルミニウムガリウム砒素などの化合物
半導体で形成すると、島状半導体層２２、２３の対向す
る側壁部は一組側Ｗ1 が順メサ構造となり、他の組側Ｗ
2 が逆メサ構造になる。[0004] In this case, when formed of a compound semiconductor such as an opposite conductivity type semiconductor layer 23 such as gallium arsenide and aluminum gallium arsenide, an island-shaped opposite side walls of the semiconductor layers 22 and 23 set side W 1 is mesa structure And the other group side W
2 has an inverted mesa structure.
【０００５】この順メサ構造は＜１ １０＞方向にあら
われ、この＜１ １０＞方向に個別電極２４と共通電極
２５を引き出していた。The forward mesa structure appears in the <110> direction, and the individual electrode 24 and the common electrode 25 are drawn out in the <110> direction.
【０００６】ところが、この従来の半導体発光装置で
は、島状半導体層２２、２３における電極２４、２５の
引き出し方向とは異なる側壁部Ｗ2 から光漏れが発生す
るのを防止するために、この側壁部Ｗ2 を電極材料で被
覆しようとすると、この側壁部Ｗ2 は逆メサ構造である
ことから、良好に被覆できず、結局光漏れは防止できな
いという問題があった。[0006] However, in order to prevent this in the conventional semiconductor light emitting device, the light leakage is generated from a different side wall W 2 is a drawing direction of the electrodes 24 and 25 in the island-shaped semiconductor layers 22 and 23, the side wall If the part W 2 to be coated with the electrode material, since the side wall portion W 2 is a reverse mesa structure can not be satisfactorily coated, eventually leakage of light has a problem that can not be prevented.
【０００７】そこで、この側壁部Ｗ2 の逆メサ構造を和
らげるために、逆メサの角度が小さくなるエッチング液
でエッチングすると、逆メサ構造が緩やかになるもの
の、今度は順メサ側の側壁部Ｗ1 が切り立ち、この順メ
サ側の側壁部Ｗ1 での電極の断線が頻繁に発生するとい
う問題があった。Therefore, if the etching is performed with an etchant having a reduced angle of the reverse mesa in order to soften the reverse mesa structure of the side wall W 2 , the reverse mesa structure becomes gentler, but this time the side wall W 2 on the forward mesa side becomes thinner. 1 is bluff, disconnection of the electrode at the side wall W 1 of the mesa side there has been a problem that frequently occurs.
【０００８】本発明はこのような従来装置の問題点に鑑
みてなされたものであり、逆導電型半導体層とコンタク
トして引き出される個別電極が断線などを起こさないよ
うにメサ部の形状を確保することを目的とする。The present invention has been made in view of such a problem of the conventional device, and the shape of the mesa portion is ensured so that the individual electrode drawn out of contact with the semiconductor layer of the opposite conductivity type does not break. The purpose is to do.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る半導体発光装置では、単結晶基板上に
島状の一導電型半導体層を設けると共に、この一導電型
半導体層上にこの一導電型半導体層の一部が露出するよ
うに逆導電型半導体層を設け、この一導電型半導体層の
露出部と前記逆導電型半導体層上に電極を接続して設け
た半導体発光装置において、前記電極を前記単結晶基板
の＜１１０＞方向に引き出したことを特徴とする。In order to achieve the above object, in a semiconductor light emitting device according to the present invention, an island-shaped one-conductivity-type semiconductor layer is provided on a single-crystal substrate, and the island-like one-conductivity-type semiconductor layer is provided. A semiconductor light emitting device is provided in which an opposite conductivity type semiconductor layer is provided so that a part of the one conductivity type semiconductor layer is exposed, and an electrode is connected to the exposed portion of the one conductivity type semiconductor layer and the electrode on the opposite conductivity type semiconductor layer. In the apparatus, the electrode is drawn in a <110> direction of the single crystal substrate.
【００１０】また、本発明に係る半導体発光装置の製造
方法では、単結晶基板上に一導電型半導体層と逆導電型
半導体層を積層して設け、この一導電型半導体層と逆導
電型半導体層が前記単結晶基板上に島状に残るようにパ
ターニングするとともに、この一導電型半導体層の一部
が露出するように逆導電型半導体層の一部を除去して、
この一導電型半導体層の露出部と逆導電型半導体層に電
極が接続されるように形成する半導体発光装置の製造方
法において、前記一導電型半導体層の一部が露出するよ
うに逆導電型半導体層の一部を除去する際に、Ｉ2 系の
エッチング液を用いて除去することを特徴とする。In the method of manufacturing a semiconductor light emitting device according to the present invention, a one-conductivity-type semiconductor layer and a reverse-conductivity-type semiconductor layer are provided on a single-crystal substrate. While patterning the layer so that it remains on the single crystal substrate in an island shape, removing a part of the opposite conductivity type semiconductor layer so that a part of the one conductivity type semiconductor layer is exposed,
In the method for manufacturing a semiconductor light emitting device in which an electrode is connected to an exposed portion of the one-conductivity-type semiconductor layer and the opposite-conductivity-type semiconductor layer, the opposite-conductivity-type semiconductor layer is exposed so that a part of the one-conductivity-type semiconductor layer is exposed. in removing the portion of the semiconductor layer, and removing with an etchant I 2 system.
【００１１】[0011]
【発明の実施の形態】以下、本発明を添付図面に基づき
詳細に説明する。図１は本発明に係る半導体発光装置の
一実施形態を示す断面図、図２は平面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing one embodiment of a semiconductor light emitting device according to the present invention, and FIG. 2 is a plan view.
【００１２】図１および図２において、１は基板、２は
一導電型半導体層、３は逆導電型半導体層、４は個別電
極、５は共通電極、６は絶縁膜である。1 and 2, 1 is a substrate, 2 is a semiconductor layer of one conductivity type, 3 is a semiconductor layer of opposite conductivity type, 4 is an individual electrode, 5 is a common electrode, and 6 is an insulating film.
【００１３】基板１はシリコン（Ｓｉ）やガリウム砒素
（ＧａＡｓ）などの単結晶半導体基板やサファイア（Ａ
ｌ2 Ｏ3 ）などの単結晶絶縁基板から成る。単結晶半導
体基板の場合、（１００）面を＜０１１＞方向に２〜７
°オフさせた基板などが好適に用いられる。サファイア
の場合、Ｃ面基板が好適に用いられる。The substrate 1 is a single crystal semiconductor substrate such as silicon (Si) or gallium arsenide (GaAs) or sapphire (A).
1 2 O 3 ). In the case of a single crystal semiconductor substrate, the (100) plane is set to 2-7 in the <011> direction.
A substrate that has been turned off is preferably used. In the case of sapphire, a C-plane substrate is preferably used.
【００１４】一導電型半導体層２は、バッファ層２ａ、
オーミックコンタクト層２ｂ、発光層２ｃで構成され
る。バッファ層２ａは２〜４μｍ程度の厚みに形成さ
れ、オーミックコンタクト層２ｂは０．１〜１．０μｍ
程度の厚みに形成され、クラッド層２ｃは０．２〜０．
４μｍ程度の厚みに形成される。バッファ層２ａとオー
ミックコンタクト層２ｂはガリウム砒素などで形成さ
れ、発光層２ｃはアルミニウムガリウム砒素などで形成
される。オーミックコンタクト層２ｂはシリコンやセレ
ンなどの一導電型半導体不純物を１×１０18〜１０22ａ
ｔｏｍｓ／ｃｍ3 程度含有し、クラッド層２ｃはシリコ
ンやセレンなどの一導電型半導体不純物を１×１０16〜
１０19ａｔｏｍｓ／ｃｍ3 程度含有する。バッファ層２
ａは基板１と半導体層との格子定数の不整合に基づくミ
スフィット転位を防止するために設けるものであり、半
導体不純物を含有させる必要はない。The one conductivity type semiconductor layer 2 includes a buffer layer 2a,
It comprises an ohmic contact layer 2b and a light emitting layer 2c. The buffer layer 2a is formed to a thickness of about 2 to 4 μm, and the ohmic contact layer 2b is formed to a thickness of 0.1 to 1.0 μm.
The cladding layer 2c is formed to a thickness of about 0.2 to 0.1.
It is formed to a thickness of about 4 μm. The buffer layer 2a and the ohmic contact layer 2b are formed of gallium arsenide or the like, and the light emitting layer 2c is formed of aluminum gallium arsenide or the like. The ohmic contact layer 2b is made of 1 × 10 18 to 10 22 a of one conductivity type semiconductor impurity such as silicon or selenium.
toms / cm 3 , and the cladding layer 2c contains 1 × 10 16 to 1 conductivity type semiconductor impurities such as silicon and selenium.
It contains about 10 19 atoms / cm 3 . Buffer layer 2
The symbol a is provided to prevent misfit dislocation due to a mismatch between the lattice constants of the substrate 1 and the semiconductor layer, and it is not necessary to contain semiconductor impurities.
【００１５】逆導電型半導体層３は、発光層３ａ、第２
のクラッド層３ｂ、および第２のオーミックコンタクト
層３ｃで構成される。発光層３ａと第２のクラッド層３
ｂは０．２〜０．４μｍ程度の厚みに形成され、オーミ
ックコンタクト層３ｃは０．０１〜０．１μｍ程度の厚
みに形成される。発光層３ａと第２のクラッド層３ｂは
アルミニウムガリウム砒素などから成り、第２のオーミ
ックコンタクト層３ｃはガリウム砒素などから成る。The opposite conductivity type semiconductor layer 3 comprises a light emitting layer 3a, a second
And a second ohmic contact layer 3c. Light emitting layer 3a and second cladding layer 3
b is formed to a thickness of about 0.2 to 0.4 μm, and the ohmic contact layer 3c is formed to a thickness of about 0.01 to 0.1 μm. The light emitting layer 3a and the second cladding layer 3b are made of aluminum gallium arsenide, and the second ohmic contact layer 3c is made of gallium arsenide.
【００１６】発光層３ａと第２のクラッド層３ｂは、電
子の閉じ込め効果と光の取り出し効果を考慮してアルミ
ニウム砒素（ＡｌＡｓ）とガリウム砒素（ＧａＡｓ）と
の混晶比を異ならしめる。発光層３ａと第２のクラッド
層３ｂは亜鉛（Ｚｎ）などの逆導電型半導体不純物を１
×１０16〜１０19程度含有し、第２のオーミックコンタ
クト層３ｃは亜鉛などの逆導電型半導体不純物を１×１
０19〜１０22程度含有する。The light emitting layer 3a and the second cladding layer 3b differ in the mixed crystal ratio between aluminum arsenide (AlAs) and gallium arsenide (GaAs) in consideration of the electron confinement effect and the light extraction effect. The light emitting layer 3a and the second cladding layer 3b are made of a semiconductor of opposite conductivity type such as zinc (Zn).
About 10 16 to about 10 19 , and the second ohmic contact layer 3 c contains 1 × 1
It contains about 0 19 to 10 22 .
【００１７】絶縁膜６は窒化シリコンなどから成り、厚
み３０００Å程度に形成される。個別電極４と共通電極
５は金／クロム（Ａｕ／Ｃｒ）などから成り、厚み１μ
ｍ程度に形成される。The insulating film 6 is made of silicon nitride or the like and has a thickness of about 3000 °. The individual electrode 4 and the common electrode 5 are made of gold / chrome (Au / Cr) or the like, and have a thickness of 1 μm.
m.
【００１８】本発明の半導体発光装置では、図２に示す
ように、一導電型半導体層２と逆導電型半導体層３から
成る島状半導体層２、３を基板１上に一列状に並べて、
隣接する島状半導体層２、３毎に同じ個別電極４に接続
し、同じ個別電極４に接続された下の一導電型半導体層
２が異なる共通電極５（５ａ、５ｂ）に接続されるよう
に二群に分けて接続される。個別電極４を選択して電流
を流すことによってページプリンタ用感光ドラムの露光
用光源として用いられる。In the semiconductor light emitting device of the present invention, as shown in FIG. 2, the island-shaped semiconductor layers 2 and 3 composed of the one-conductivity-type semiconductor layer 2 and the opposite-conductivity-type semiconductor layer 3 are arranged in a line on the substrate 1.
The adjacent island-shaped semiconductor layers 2, 3 are connected to the same individual electrode 4, and the lower one conductivity type semiconductor layer 2 connected to the same individual electrode 4 is connected to a different common electrode 5 (5 a, 5 b). Are connected in two groups. When the individual electrodes 4 are selected and an electric current is applied, the individual electrodes 4 are used as an exposure light source for a photosensitive drum for a page printer.
【００１９】島状半導体層２、３は、結晶の面方位とエ
ッチングとの関係から一方の対向する壁面が順メサ構造
で、他方の対向する壁面が逆メサ構造を有する。本発明
では、一導電型半導体層２の露出部Ｒにおける逆導電型
半導体層３の側壁部Ｗ1 が順メサとなるように形成し
た。すなわち、段差エッチングを行う際、ＧａＡｓは全
方向順メサ形状になるが、ＡｌＧａＡｓの＜１−１０＞
方向は逆メサ形状に＜１１０＞方向は順メサ形状になる
Ｉ2 系エッチング液を用いて逆導電型半導体層３の側壁
部Ｗを順メサ形状になる方向にパターニングする。この
逆導電型半導体層３の側壁部Ｗ1 を順メサ形状とするこ
とで、個別電極４の基板上への引き出しにおいて、メサ
部で断線しないようにできる。One of the island-shaped semiconductor layers 2 and 3 has a forward mesa structure and the other opposed wall has an inverted mesa structure due to the relationship between the crystal orientation and the etching. In the present invention, the side wall portion W 1 of the opposite conductivity type semiconductor layer 3 in the exposed portion R of the one conductivity type semiconductor layer 2 is formed to have a mesa. That is, when step etching is performed, GaAs becomes a forward mesa shape in all directions, but <1-10> of AlGaAs is used.
The side wall portion W of the opposite conductivity type semiconductor layer 3 is patterned in the direction of the forward mesa shape using an I 2 -based etchant that the direction becomes the reverse mesa shape and the <110> direction becomes the forward mesa shape. The side wall W 1 of the opposite conductivity type semiconductor layer 3 by a forward mesa shape, the drawer onto the substrate of the individual electrodes 4, can be prevented from breaking at the mesa portion.
【００２０】また、＜１１０＞方向への電極引き出しに
おいては、図３に示す構造にすることで、従来通り一導
電型半導体層２の露出部Ｒにおける逆導電型半導体層３
の側壁部Ｗが逆メサとなるように形成したまま個別電極
４がメサ部で断線せず、発光の光漏れもないようにでき
る。すなわち，この図３に示す例では、図１に示す例と
は９０°方向が異なり、電極を引き出す側壁Ｗ3 は逆メ
サ形状となるが、Ｗ2の側壁側にも電極を引き出してい
ることから、この部分で繋がっており、ここから電流は
流れることになる。When the electrode is drawn in the <110> direction, the structure shown in FIG. 3 is employed, so that the opposite conductivity type semiconductor layer 3 in the exposed portion R of the one conductivity type semiconductor layer 2 is conventionally formed.
The individual electrodes 4 are not disconnected at the mesa portion and the light emission of the light is not leaked while the side wall portion W is formed to be an inverted mesa. That is, in the example shown in FIG. 3, the direction of 90 ° is different from the example shown in FIG. 1, and the side wall W 3 from which the electrode is drawn has an inverted mesa shape, but the electrode is also drawn on the side wall side of W 2 . Therefore, the connection is made at this portion, and the current flows from here.
【００２１】次に、上述のような半導体発光装置の製造
方法を説明する。まず、単結晶基板１上に、一導電型半
導体層２、逆導電型半導体層３をＭＯＣＶＤ法などで順
次積層して形成する。Next, a method of manufacturing the above-described semiconductor light emitting device will be described. First, a semiconductor layer 2 of one conductivity type and a semiconductor layer 3 of opposite conductivity type are sequentially laminated on a single crystal substrate 1 by MOCVD or the like.
【００２２】これらの半導体層２、３を形成する場合、
基板温度をまず４００〜５００℃に設定して２００〜２
０００Åの厚みにアモルファス状のガリウム砒素膜を形
成した後、基板温度を７００〜９００℃に上げて所望厚
みの半導体層２、３を形成する。When these semiconductor layers 2 and 3 are formed,
First, set the substrate temperature to 400 to 500 ° C. and
After forming an amorphous gallium arsenide film to a thickness of 000 °, the substrate temperature is raised to 700 to 900 ° C. to form semiconductor layers 2 and 3 having a desired thickness.
【００２３】この場合、原料ガスとしてはＴＭＧ（（Ｃ
Ｈ3 ）3 Ｇａ）、ＴＥＧ（（Ｃ2 Ｈ5 ）3 Ｇａ）、アル
シン（ＡｓＨ3 ）、ＴＭＡ（（ＣＨ3 ）3 Ａｌ）、ＴＥ
Ａ（（Ｃ2 Ｈ5 ）3 Ａｌ）などが用いられ、導電型を制
御するためのガスとしては、シラン（ＳｉＨ4 ）、セレ
ン化水素（Ｈ2 Ｓｅ）、ＤＭＺ（（ＣＨ3 ）2 Ｚｎ）な
どが用いられ、キャリアガスとしては、Ｈ2 などが用い
られる。In this case, TMG ((C
H 3 ) 3 Ga), TEG ((C 2 H 5 ) 3 Ga), arsine (AsH 3 ), TMA ((CH 3 ) 3 Al), TE
A ((C 2 H 5 ) 3 Al) or the like is used, and silane (SiH 4 ), hydrogen selenide (H 2 Se), DMZ ((CH 3 ) 2 Zn ) Is used, and H 2 or the like is used as the carrier gas.
【００２４】次に、隣接する素子同志が電気的に分離さ
れるように、半導体層２、３が島状にパターニングされ
る。このエッチングは、硫酸過酸化水素系のエッチング
液を用いたウエットエッチングやＣＣ１2 Ｆ2 ガスを用
いたドライエッチングなどで行われる。また、一導電型
半導体層２と共通電極５との接続部が逆導電型半導体層
３から露出するようにエッチングされる。このエッチン
グは、Ｉ2 ：ＫＩ：ＨＣｌ：Ｈ2 Ｏ＝２ｇ：４ｇ：１ｃ
ｃ：１００ｃｃなどのエッチング液を用いたウエットエ
ッチングで行われる。Next, the semiconductor layers 2 and 3 are patterned in an island shape so that adjacent elements are electrically separated from each other. This etching is performed by dry etching using a wet etching or CC1 2 F 2 gas using an etchant of sulfuric acid hydrogen peroxide. The etching is performed so that the connection portion between the one conductivity type semiconductor layer 2 and the common electrode 5 is exposed from the opposite conductivity type semiconductor layer 3. In this etching, I 2 : KI: HCl: H 2 O = 2 g: 4 g: 1c
c: Performed by wet etching using an etchant such as 100 cc.
【００２５】次に、プラズマＣＶＤ法で、シランガス
（ＳｉＨ4 ）とアンモニアガス（ＮＨ3 ）を用いて窒化
シリコンから成る絶縁膜を形成してパターニングする。
最後に、クロムと金を蒸着法やスパッタリング法で形成
してパターニングすることにより完成する。Next, an insulating film made of silicon nitride is formed and patterned by a plasma CVD method using silane gas (SiH 4 ) and ammonia gas (NH 3 ).
Finally, chromium and gold are formed by vapor deposition or sputtering and patterned to complete.
【００２６】[0026]
【発明の効果】以上のように、本発明に係る半導体発光
装置によれば、一導電型半導体層の露出部における前記
逆導電型半導体層の側壁部を順メサ構造になる方向にパ
ターニングしたことから、逆導電型半導体層上の電極を
メサ部で断線することなく基板上に引き出せ、又、逆導
電型半導体層のサイドから電極を引き出すような構造に
することで従来通り個別電極と共通電極が近接して配設
されても短絡などを有効に防止することができる。ま
た、一導電型半導体層の露出部から近傍からの光漏れを
低減でき、印画品質を向上させることができる。As described above, according to the semiconductor light emitting device of the present invention, the side wall portion of the opposite conductivity type semiconductor layer in the exposed portion of the one conductivity type semiconductor layer is patterned in the direction of the forward mesa structure. Therefore, the electrodes on the opposite conductivity type semiconductor layer can be drawn out to the substrate without breaking at the mesa portion, and the electrodes can be drawn out from the side of the opposite conductivity type semiconductor layer by the individual electrodes and the common electrode as before. Can be effectively prevented even if they are arranged close to each other. Further, light leakage from the exposed portion of the one-conductivity-type semiconductor layer to the vicinity can be reduced, and the printing quality can be improved.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明に係る半導体発光装置の一実施形態を示
す断面図である。FIG. 1 is a sectional view showing one embodiment of a semiconductor light emitting device according to the present invention.
【図２】本発明に係る半導体発光装置の一実施形態を示
す平面図である。FIG. 2 is a plan view showing one embodiment of a semiconductor light emitting device according to the present invention.
【図３】本発明に係る半導体発光装置の一実施形態を示
す平面図である。FIG. 3 is a plan view showing one embodiment of a semiconductor light emitting device according to the present invention.
【図４】従来の半導体発光装置を示す断面図である。FIG. 4 is a sectional view showing a conventional semiconductor light emitting device.
【図５】従来の半導体発光装置を示す平面図である。FIG. 5 is a plan view showing a conventional semiconductor light emitting device.
１‥‥‥基板、２‥‥‥一導電型半導体層、３‥‥‥逆
導電型半導体層、４‥‥‥個別電極、５‥‥‥共通電
極、６‥‥‥絶縁膜1 ‥‥‥ substrate, 2 ‥‥‥ one conductivity type semiconductor layer, 3 半導体 reverse conductivity type semiconductor layer, 4 ‥‥‥ individual electrode, 5 ‥‥‥ common electrode, 6 ‥‥‥ insulating film
Claims (2)
を設けると共に、この一導電型半導体層上にこの一導電
型半導体層の一部が露出するように逆導電型半導体層を
設け、この一導電型半導体層の露出部と前記逆導電型半
導体層上に電極を接続して設けた半導体発光装置におい
て、前記電極を前記単結晶基板の＜１１０＞方向に引き
出したことを特徴とする半導体発光装置。An island-shaped one conductivity type semiconductor layer is provided on a single crystal substrate, and an opposite conductivity type semiconductor layer is formed on the one conductivity type semiconductor layer so that a part of the one conductivity type semiconductor layer is exposed. A semiconductor light emitting device provided with an electrode connected to the exposed portion of the one conductivity type semiconductor layer and the opposite conductivity type semiconductor layer, wherein the electrode is drawn in the <110> direction of the single crystal substrate. Semiconductor light emitting device.
電型半導体層を積層して設け、この一導電型半導体層と
逆導電型半導体層が前記単結晶基板上に島状に残るよう
にパターニングするとともに、この一導電型半導体層の
一部が露出するように逆導電型半導体層の一部を除去し
て、この一導電型半導体層の露出部と逆導電型半導体層
に電極が接続されるように形成する半導体発光装置の製
造方法において、前記一導電型半導体層の一部が露出す
るように逆導電型半導体層の一部を除去する際に、Ｉ2
系のエッチング液を用いて除去することを特徴とする半
導体発光装置の製造方法。2. A single-conductivity-type semiconductor layer and a reverse-conductivity-type semiconductor layer are stacked on a single-crystal substrate, and the one-conductivity-type semiconductor layer and the reverse-conductivity-type semiconductor layer remain in an island shape on the single-crystal substrate. And removing a part of the opposite conductivity type semiconductor layer so that a part of the one conductivity type semiconductor layer is exposed, and forming an electrode on the exposed portion of the one conductivity type semiconductor layer and the opposite conductivity type semiconductor layer. In the method for manufacturing a semiconductor light emitting device formed so as to be connected, when removing a part of the opposite conductivity type semiconductor layer so that a part of the one conductivity type semiconductor layer is exposed, I 2
A method for manufacturing a semiconductor light emitting device, wherein the semiconductor light emitting device is removed by using a system etchant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36883898A JP2000196149A (en) | 1998-12-25 | 1998-12-25 | Semiconductor light emitting device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36883898A JP2000196149A (en) | 1998-12-25 | 1998-12-25 | Semiconductor light emitting device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000196149A true JP2000196149A (en) | 2000-07-14 |
Family
ID=18492893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP36883898A Pending JP2000196149A (en) | 1998-12-25 | 1998-12-25 | Semiconductor light emitting device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000196149A (en) |
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1998
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| JP2010226085A (en) * | 2009-02-26 | 2010-10-07 | Kyocera Corp | Light-emitting device and method of manufacturing the same |
| JP2013118331A (en) * | 2011-12-05 | 2013-06-13 | Showa Denko Kk | Light emitting diode and method for manufacturing the same |
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