JP2000133801A5 - - Google Patents

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Publication number
JP2000133801A5
JP2000133801A5 JP1998305368A JP30536898A JP2000133801A5 JP 2000133801 A5 JP2000133801 A5 JP 2000133801A5 JP 1998305368 A JP1998305368 A JP 1998305368A JP 30536898 A JP30536898 A JP 30536898A JP 2000133801 A5 JP2000133801 A5 JP 2000133801A5
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JP
Japan
Prior art keywords
layer
type
low
potential side
resistance
Prior art date
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Application number
JP1998305368A
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English (en)
Japanese (ja)
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JP3943732B2 (ja
JP2000133801A (ja
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Priority to JP30536898A priority Critical patent/JP3943732B2/ja
Priority claimed from JP30536898A external-priority patent/JP3943732B2/ja
Publication of JP2000133801A publication Critical patent/JP2000133801A/ja
Publication of JP2000133801A5 publication Critical patent/JP2000133801A5/ja
Application granted granted Critical
Publication of JP3943732B2 publication Critical patent/JP3943732B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP30536898A 1998-10-27 1998-10-27 高耐圧半導体素子 Expired - Fee Related JP3943732B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30536898A JP3943732B2 (ja) 1998-10-27 1998-10-27 高耐圧半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30536898A JP3943732B2 (ja) 1998-10-27 1998-10-27 高耐圧半導体素子

Publications (3)

Publication Number Publication Date
JP2000133801A JP2000133801A (ja) 2000-05-12
JP2000133801A5 true JP2000133801A5 (de) 2005-07-28
JP3943732B2 JP3943732B2 (ja) 2007-07-11

Family

ID=17944278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30536898A Expired - Fee Related JP3943732B2 (ja) 1998-10-27 1998-10-27 高耐圧半導体素子

Country Status (1)

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JP (1) JP3943732B2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210368A (ja) * 1999-07-02 2006-08-10 Toyota Central Res & Dev Lab Inc 縦型半導体装置及びその製造方法
JP4939760B2 (ja) 2005-03-01 2012-05-30 株式会社東芝 半導体装置
JP4997715B2 (ja) * 2005-05-18 2012-08-08 富士電機株式会社 半導体装置およびその製造方法
JP5052025B2 (ja) 2006-03-29 2012-10-17 株式会社東芝 電力用半導体素子
JP4539680B2 (ja) * 2007-05-14 2010-09-08 株式会社デンソー 半導体装置およびその製造方法
JP4670915B2 (ja) 2008-08-08 2011-04-13 ソニー株式会社 半導体装置
KR101023079B1 (ko) 2008-11-04 2011-03-25 주식회사 동부하이텍 반도체 소자 및 그의 제조 방법
WO2019186224A1 (ja) * 2018-03-26 2019-10-03 日産自動車株式会社 半導体装置及びその製造方法
CN117766588B (zh) * 2024-02-22 2024-04-30 南京邮电大学 具有延伸漏结构的超结双soi-ldmos器件及制造方法

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