JP2000129085A - Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith - Google Patents
Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewithInfo
- Publication number
- JP2000129085A JP2000129085A JP30234098A JP30234098A JP2000129085A JP 2000129085 A JP2000129085 A JP 2000129085A JP 30234098 A JP30234098 A JP 30234098A JP 30234098 A JP30234098 A JP 30234098A JP 2000129085 A JP2000129085 A JP 2000129085A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin
- indene
- resin composition
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、リードフレーム特
に銅系のリードフレームとの接着性に優れ、且つ耐半田
リフロー性及び耐湿性に優れた半導体封止用エポキシ樹
脂組成物及びそれを用いた半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation which is excellent in adhesion to a lead frame, especially a copper-based lead frame, and which is excellent in solder reflow resistance and moisture resistance. The present invention relates to a semiconductor device.
【０００２】[0002]
【従来の技術】ＩＣ、ＬＳＩ等の半導体装置は、素子の
集積度の向上とともに、素子サイズの大型化、半導体装
置の小型化、薄型化が進んでいる。さらに、高速メモリ
ー等演算速度の高速化に対し、リードフレームの材質が
従来の鉄系（コバール、４２アロイ等）から銅系（リン
青銅、無酸素銅等）が使用される傾向にある。更に、半
導体装置を基板へ取付ける際に、ＩＲリフローやＶＰＳ
リフロー等の工程において急激に２００℃以上高温に晒
されることにより、パッケージ中に含まれる水分が気化
し、この水蒸気圧が樹脂と素子／リードフレーム等のイ
ンサートとの界面において剥離応力として働き、これら
界面での剥離や、薄型のパッケージでは、フクレや割れ
が発生し耐湿性が劣化してしまうという問題が出てきて
いる。また更に、銅系のリードフレームを使用する場合
には、半導体素子をリードフレームに搭載する工程にお
いて前記熱処理によって表面が酸化し、封止材との接着
性が低下し耐リフロー性が著しく悪くなるという問題が
ある。2. Description of the Related Art In semiconductor devices such as ICs and LSIs, as the degree of integration of elements has been improved, the element size has been increased, and the semiconductor devices have been reduced in size and thickness. Further, in order to increase the operation speed of a high-speed memory or the like, there is a tendency that the material of the lead frame is changed from a conventional iron-based (Kovar, 42 alloy, etc.) to a copper-based (phosphor bronze, oxygen-free copper, etc.). Furthermore, when a semiconductor device is mounted on a substrate, IR reflow or VPS
When exposed to a high temperature of 200 ° C. or more rapidly in a process such as reflow, moisture contained in the package is vaporized, and this water vapor pressure acts as a peeling stress at an interface between the resin and an insert such as an element / lead frame. In the case of peeling at the interface or in a thin package, there has been a problem that blisters and cracks occur and the moisture resistance is deteriorated. Furthermore, when a copper-based lead frame is used, the surface is oxidized by the heat treatment in the step of mounting the semiconductor element on the lead frame, the adhesiveness with the sealing material is reduced, and the reflow resistance is significantly deteriorated. There is a problem.
【０００３】このようなリードフレームと封止材との接
着力低下に起因するフクレ、クラックの防止策として、
半導体素子をリードフレームに搭載する工程においてか
かる熱処理による酸化を防止するため、熱処理温度の低
温化および熱処理時間の短時間化の検討が行われてい
る。また、封止材自体を低粘度化することによりリード
フレームと封止材との接着力の向上をはかったり、ある
いは充填材の形状を球形化することにより高充填化と吸
水率の低減をはかる等の検討が行われている。しかしな
がら、このような手法によっても銅系リードフレームと
封止材との接着力は満足できるものではなく、耐リフロ
ー性のさらなる向上が求められている。As a measure for preventing blisters and cracks caused by a decrease in the adhesive strength between the lead frame and the sealing material,
In order to prevent oxidation due to such heat treatment in the process of mounting a semiconductor element on a lead frame, studies have been made on lowering the heat treatment temperature and shortening the heat treatment time. In addition, by lowering the viscosity of the sealing material itself, the adhesive strength between the lead frame and the sealing material can be improved, or by making the shape of the filler spherical, high filling and reduction of water absorption can be achieved. Considerations have been made. However, even with such a method, the adhesive force between the copper-based lead frame and the sealing material is not satisfactory, and further improvement in reflow resistance is required.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、かかる状況
に鑑みなされたもので、リードフレーム特に銅系リード
フレームとの接着力が高く、かつ耐リフロー性に優れた
半導体封止用エポキシ樹脂組成物および該組成物により
封止してなる半導体装置を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has been made of an epoxy resin composition for semiconductor encapsulation having a high adhesive strength to a lead frame, particularly a copper-based lead frame, and having excellent reflow resistance. It is an object to provide a semiconductor device sealed with a product and the composition.
【０００５】[0005]
【課題を解決するための手段】すなわち本発明は、
（Ａ）一般式（１）で示されるビフェニル型エポキシ樹
脂That is, the present invention provides:
(A) Biphenyl type epoxy resin represented by general formula (1)
【化３】 （式中、Ｒは水素原子または炭素数１〜４の低級アルキ
ル基を表し、ｍは０〜６の整数を示す。） （Ｂ）一般式（２）で示されるフェノールアラルキル樹
脂、Embedded image (In the formula, R represents a hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, and m represents an integer of 0 to 6.) (B) a phenol aralkyl resin represented by the general formula (2):
【化４】 （式中、ｐは０〜６の整数を表す。） （Ｃ）トリフェニルホスフィンとベンゾキノンの付加物 （Ｄ）無機充填材および （Ｅ）インデン樹脂を必須成分とし、インデン樹脂の配
合量がエポキシ樹脂１００重量部に対して２．５〜２０
重量部配合してなる半導体封止用エポキシ樹脂組成物お
よび、それを用いて封止した樹脂封止型半導体装置に関
する。Embedded image (In the formula, p represents an integer of 0 to 6.) (C) An adduct of triphenylphosphine and benzoquinone (D) An inorganic filler and (E) an indene resin are essential components, and the compounding amount of the indene resin is epoxy. 2.5-20 for 100 parts by weight of resin
The present invention relates to an epoxy resin composition for semiconductor encapsulation mixed in parts by weight and a resin-encapsulated semiconductor device encapsulated using the same.
【０００６】[0006]
【発明の実施の形態】本発明で用いられるエポキシ樹脂
としては、上記一般式（１）で表されるビフェニル型の
エポキシ樹脂がインサートとの接着力がよいので好まし
いが、その他のエポキシ樹脂、例えば、電子部品封止用
エポキシ樹脂成形材料で一般に使用されている、フェノ
ールノボラック型エポキシ樹脂、オルソクレゾール、ノ
ボラック型エポキシ樹脂、ビスフェノールＡ型エポキシ
樹脂をはじめとするフェノール類とアルデヒド類から合
成されるノボラック樹脂をエポキシ化したエポキシ樹
脂、ビスフェノールＡ、ビスフェノールＦ、ビスフェノ
ールＳ、アルキル置換ビスフェノール等のグリシジルエ
ーテル、ジアミノジフェニルメタン、イソシアヌル酸な
どのポリアミンとエピクロルヒドリンの反応により得ら
れるグリシジルアミン型エポキシ樹脂、ジシクロペンタ
ジエンとフェノール類の共縮合樹脂のエポキシ化物、ナ
フタレン環を有するエポキシ樹脂、ナフトールアラルキ
ル樹脂のエポキシ化物、トリメチロールプロパン型エポ
キシ樹脂、テルペン変性エポキシ樹脂、オレフィン結合
を過酢酸などの過酸で酸化して得られる線状脂肪族エポ
キシ樹脂、及び脂肪族エポキシ樹脂等を併用してもよ
い。BEST MODE FOR CARRYING OUT THE INVENTION As the epoxy resin used in the present invention, a biphenyl type epoxy resin represented by the above general formula (1) is preferable because of its good adhesive strength with an insert. Novolak synthesized from phenols and aldehydes including phenol novolak type epoxy resin, orthocresol, novolak type epoxy resin, and bisphenol A type epoxy resin, which are commonly used in epoxy resin molding materials for sealing electronic components. Glycidyl amides obtained by the reaction of epichlorohydrin with epoxidized resins, glycidyl ethers such as bisphenol A, bisphenol F, bisphenol S, alkyl-substituted bisphenols, polyamines such as diaminodiphenylmethane and isocyanuric acid Epoxy resin, epoxidized co-condensation resin of dicyclopentadiene and phenol, epoxy resin having naphthalene ring, epoxidized naphthol aralkyl resin, trimethylolpropane epoxy resin, terpene-modified epoxy resin, peracetic acid, etc. May be used in combination with a linear aliphatic epoxy resin obtained by oxidation with a peracid and an aliphatic epoxy resin.
【０００７】本発明で用いられる硬化剤は、一般式
（２）で表されるフェノールアラルキル型のフェノール
樹脂がインサートとの接着力がよいので好ましいが、そ
の他のフェノール化合物、例えば、電子部品封止用エポ
キシ樹脂成形材料で一般に使用されているもので、フェ
ノール、クレゾール、レジルシン、カテコール、ビスフ
ェノールＡ、ビスフェノールＦ等のフェノール類または
α−ナフトール、β−ナフトール、ジヒドロキシナフタ
レン等のナフトール類とホルムアルデヒド等のアルデヒ
ド類とを酸性触媒下で縮合又は共縮合させて得られるフ
ェノール樹脂等が挙げられる。尚、これらの硬化剤は単
独又は２種以上併用して用いることができる。また、エ
ポキシ樹脂（Ａ）と硬化剤（Ｂ）の当量比、すなわち、
エポキシ樹脂中のエポキシ基数／硬化剤中の水酸基数の
比は、特に限定はされないが、それぞれの未反応分を少
なく抑えるために、０．７〜１．３の範囲に設定するこ
とが好ましく、特に成形性、耐リフロー性に優れる成形
材料を得るためには０．８〜１．２の範囲に設定するこ
とが好ましい。The curing agent used in the present invention is preferably a phenol aralkyl type phenol resin represented by the general formula (2) because of its good adhesive strength with the insert. It is commonly used in epoxy resin molding materials for phenols such as phenol, cresol, resircin, catechol, bisphenol A, bisphenol F or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene and formaldehyde. Phenol resins obtained by condensation or co-condensation with aldehydes in the presence of an acidic catalyst are exemplified. These curing agents can be used alone or in combination of two or more. Further, the equivalent ratio of the epoxy resin (A) and the curing agent (B), that is,
The ratio of the number of epoxy groups in the epoxy resin / the number of hydroxyl groups in the curing agent is not particularly limited, but is preferably set in the range of 0.7 to 1.3 in order to reduce the amount of each unreacted component. In particular, in order to obtain a molding material having excellent moldability and reflow resistance, it is preferable to set the ratio in the range of 0.8 to 1.2.
【０００８】本発明で用いられる硬化促進剤は、トリフ
ェニルホスフィンとベンゾキノンの付加物が連続成形作
業性がよいので好ましいが、前記硬化促進剤（Ｃ）以外
に、公知のエポキシ樹脂の硬化促進剤、例えば、１，８
−ジアザ−ビシクロ（５，４，０）ウンデセン、１，５
−ジアザ−ビシクロ（４，３，０）ノネン、５，６−ジ
ブチルアミノ−１，８−ジアザ−ビシクロ（５，４，
０）ウンデセン−７、ベンジルジメチルアミン、トリエ
タノールアミン、ジメチルアミノエタノール、トリス
（ジメチルアミノメチル）フェノール等の３級アミン
類、及びこれらの誘導体、２−メチルイミダゾール、２
−フェニルイミダゾール、２−フェニル−４−メチルイ
ミダゾール等のイミダゾール類及びこれらの誘導体、ト
リブチルホスフィン、メチルジフェニルホスフィン、ト
リフェニルホスフィン、ジフェニルホスフィン、フェニ
ルホスフィン等の有機ホスフィン類、及びテトラフェニ
ルホスホニウムテトラフェニルボレード、トリフェニル
ホスフィンテトラフェニルボレード、２−エチル−４−
メチルイミダゾールテトラフェニルボレート、Ｎ−メチ
ルモルホリンテトラフェニルボレート等のテトラフェニ
ルボロン塩及びこれらの誘導体等が挙げられる。これら
を２種以上併用して用いてもよい。The curing accelerator used in the present invention is preferably an adduct of triphenylphosphine and benzoquinone because of good continuous molding workability. In addition to the curing accelerator (C), a known epoxy resin curing accelerator is used. , For example, 1,8
-Diaza-bicyclo (5,4,0) undecene, 1,5
-Diaza-bicyclo (4,3,0) nonene, 5,6-dibutylamino-1,8-diaza-bicyclo (5,4,
0) Tertiary amines such as undecene-7, benzyldimethylamine, triethanolamine, dimethylaminoethanol and tris (dimethylaminomethyl) phenol, and derivatives thereof, 2-methylimidazole,
Imidazoles such as -phenylimidazole and 2-phenyl-4-methylimidazole and derivatives thereof, organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine and phenylphosphine, and tetraphenylphosphonium tetraphenylboret , Triphenylphosphine tetraphenylborate, 2-ethyl-4-
Examples thereof include tetraphenylboron salts such as methylimidazole tetraphenylborate and N-methylmorpholine tetraphenylborate, and derivatives thereof. These may be used in combination of two or more.
【０００９】本発明で用いられる無機充填剤（Ｄ）とし
ては、特に限定はないが、溶融シリカ粉末、結晶シリカ
粉末、アルミナ、ジルコン、ケイ酸カルシウム、炭酸カ
ルシウム、炭化珪素、窒化アルミ、窒化ホウ素、ベリリ
ア、ジルコニア等の粉体、またはこれらを球形化したビ
ーズ、チタン酸カリウム、炭化珪素、窒化珪素、アルミ
ナ等の単結晶繊維、ガラス繊維等を１種類以上配合して
用いることができる。さらに、難燃効果のある無機充填
剤としては、水酸化アルミニウム、水酸化マグネシウ
ム、ホウ酸亜鉛等が挙げられ、これらを単独または併用
して用いることもできる。上記の無機充填剤の中で、線
膨張係数低減の観点からは溶融シリカが、高熱伝導性の
観点からはアルミナが好ましい。充填剤形状は、成形時
の流動性及び金型磨耗性の点から球形もしくは球形に近
い形が好ましく、５０重量％以上が球形であることが好
ましい。尚、無機充填材の配合量は、吸湿性、線膨張係
数の低減の点から組成物全体の８０〜９５重量％、好ま
しくは８５〜９５重量％がよい。The inorganic filler (D) used in the present invention is not particularly limited, but includes fused silica powder, crystalline silica powder, alumina, zircon, calcium silicate, calcium carbonate, silicon carbide, aluminum nitride, and boron nitride. , Beryllia, zirconia, or the like, or beads obtained by spheroidizing them, single crystal fibers such as potassium titanate, silicon carbide, silicon nitride, and alumina, glass fibers, and the like can be used in combination. Further, examples of the inorganic filler having a flame retardant effect include aluminum hydroxide, magnesium hydroxide, zinc borate and the like, and these can be used alone or in combination. Among the above-mentioned inorganic fillers, fused silica is preferred from the viewpoint of reducing the linear expansion coefficient, and alumina is preferred from the viewpoint of high thermal conductivity. The shape of the filler is preferably spherical or nearly spherical, from the viewpoint of fluidity during molding and mold abrasion, and it is preferable that 50% by weight or more is spherical. The amount of the inorganic filler is preferably from 80 to 95% by weight, and more preferably from 85 to 95% by weight of the whole composition from the viewpoint of reducing the hygroscopicity and the coefficient of linear expansion.
【００１０】本発明で用いられるインデン樹脂は接着性
の向上に特に優れている。この樹脂はインデン、アルキ
ルインデン等のインデン類とスチレン、アルキルスチレ
ン等のスチレン類とフェノール類の共重合樹脂であり、
これらのモノマーをルイス酸、ブレンステッド酸、固体
酸を触媒として、カチオン重合して得られる樹脂であ
り、配合量は、エポキシ樹脂１００重量部に対し、２．
５〜２０．０重量部、好ましくは、５．０〜１５．０重
量部が適している。The indene resin used in the present invention is particularly excellent in improving adhesiveness. This resin is a copolymer resin of indenes such as indene and alkyl indene and styrene and phenols such as styrene and alkyl styrene,
These monomers are resins obtained by cationic polymerization using Lewis acids, Bronsted acids, and solid acids as catalysts.
5 to 20.0 parts by weight, preferably 5.0 to 15.0 parts by weight are suitable.
【００１１】本発明のエポキシ樹脂組成物及び電子部品
封止用エポキシ樹脂成形材料には、従来公知のカップリ
ング剤を使用することができるが、エポキシシランとメ
ルカプトシランを組み合わせたものがインサートとの接
着性がよいことから好ましい。As the epoxy resin composition of the present invention and the epoxy resin molding material for encapsulating electronic parts, a conventionally known coupling agent can be used, and a combination of epoxy silane and mercapto silane is used as an insert resin. It is preferable because of good adhesiveness.
【００１２】また、本発明のエポキシ樹脂組成物には、
成形時に金型との良好な離型性を持たせるため、離型剤
を添加してもよい。この離型剤としては、酸化型若しく
は非酸化型のポリオレフィンを総エポキシ樹脂１００重
量部に対して０．０１〜１０重量部、好ましくは０．１
〜５．０重量部添加することが好ましい。これは、０．
０１重量部未満では十分な離型性を得ることができず、
また、１０重量部を超えると接着性が阻害される恐れが
あるからである。この酸化型若しくは非酸化型のオレフ
ィンとしては、ヘキスト社製Ｈ４やＰＥ、ＰＥＤシリー
ズ等の平均分子量が５００〜１００００程度の低分子量
ポリエチレン等が挙げられる。また、これ以外の離型
剤、例えば、カルナバワックス、モンタン酸エステル、
モンタン酸、ステアリン酸等と併用してもよい。さら
に、その他の添加剤としては、ブロム化エポキシ樹脂や
三酸化アンチモン、リン酸エステル、赤リン及びメラミ
ン樹脂をはじめとする含窒素化合物等の難燃剤、天然ワ
ックス、合成ワックス、酸化または非酸化のポリオレフ
ィン等の離型剤、カーボンブラック等の着色剤、シリコ
ーンオイルやシリコーンゴム粉末等の応力緩和剤、ハイ
ドロタルサイト、アンチモン−ビスマス等のイオントラ
ップ剤等を必要に応じて用いることができる。上記原材
料を各々適宜配合し、この配合物をミキシングロール機
等の混練機にかけ混練して半溶融状態の樹脂組成物と
し、これを室温に冷却した後、公知の手段により粉砕
し、必要に応じて打錠するといった一連の工程により、
目的とする半導体封止用エポキシ樹脂組成物を得ること
ができる。本発明の半導体封止用エポキシ樹脂組成物
は、通常粉末状またはそれを打錠したタブレット状の材
料として、半導体の封止に用いらる。本発明のエポキシ
樹脂組成物を用いて、半導体素子を封止する目的とする
半導体装置が得られる。半導体素子の封止方法は特に限
定するものではなく、通常の方法、例えば、トランスフ
ァー成形等の公知の成形方法によって行うことができ
る。このようにして得られる半導体装置は、インサート
と封止材料の接着性に優れ、封止材料への吸湿量が少な
く、装置を基板に半田付けする際の耐クラック性に優れ
ていると同時に、半導体装置をトランスファー成形する
際に金型側へ張り付くこともなく優れた封止作業性を有
している。Further, the epoxy resin composition of the present invention comprises:
A mold release agent may be added in order to have good mold releasability from the mold during molding. As the releasing agent, an oxidized or non-oxidized polyolefin is used in an amount of 0.01 to 10 parts by weight, preferably 0.1 to 10 parts by weight based on 100 parts by weight of the total epoxy resin.
It is preferable to add ~ 5.0 parts by weight. This is 0.
If the amount is less than 01 parts by weight, sufficient release properties cannot be obtained,
On the other hand, if it exceeds 10 parts by weight, the adhesiveness may be impaired. Examples of the oxidized or non-oxidized olefin include low molecular weight polyethylene having an average molecular weight of about 500 to 10,000 such as H4, PE and PED series manufactured by Hoechst. Further, other release agents, for example, carnauba wax, montanic acid ester,
You may use together with montanic acid, stearic acid, etc. Further, as other additives, flame retardants such as brominated epoxy resins and antimony trioxide, phosphate esters, nitrogen-containing compounds such as red phosphorus and melamine resins, natural waxes, synthetic waxes, oxidized or non-oxidized A release agent such as polyolefin, a colorant such as carbon black, a stress relieving agent such as silicone oil or silicone rubber powder, and an ion trapping agent such as hydrotalcite and antimony-bismuth can be used as necessary. The above raw materials are appropriately blended, and the blend is kneaded in a kneading machine such as a mixing roll machine to form a semi-molten resin composition.After cooling to room temperature, the mixture is pulverized by a known means, if necessary. Through a series of steps such as tableting
The desired epoxy resin composition for semiconductor encapsulation can be obtained. The epoxy resin composition for semiconductor encapsulation of the present invention is usually used as a powder or a tablet-like material obtained by compressing the same into a semiconductor. Using the epoxy resin composition of the present invention, a semiconductor device intended to seal a semiconductor element can be obtained. The method for sealing the semiconductor element is not particularly limited, and can be performed by an ordinary method, for example, a known molding method such as transfer molding. The semiconductor device obtained in this way has excellent adhesiveness between the insert and the sealing material, has a small amount of moisture absorption into the sealing material, and has excellent crack resistance when soldering the device to a substrate, It has excellent sealing workability without sticking to the mold side when transfer molding a semiconductor device.
【００１３】[0013]
【実施例】以下、本発明の実施例及び比較例によって、
本発明を更に具体的に説明するが、本発明はこれらの実
施例に限定されるものではない。 実施例１〜５ 比較例１〜６ まず、表１に示す重量部で各原材料を配合し予備混合し
た後、１０インチ径の二軸ロールを使用して、混練温度
８０〜９０℃、混練時間７〜１２分の条件で混練し、冷
却後粉砕して半導体封止用エポキシ樹脂組成物を得た。
この封止用エポキシ樹脂組成物を用い、トランスファー
成形機で、金型温度１８０℃、成形圧力７０ｋｇｆ／ｃ
ｍ2 、硬化時間９０秒の条件で成形し、試験片を作製し
た。後硬化は１７５℃、６時間行った。スパイラルフロ
ーは、ＥＭＭＩ−６６に準じて流動距離を測定した。熱
時硬度は、バリ測定金型（幅５ｍｍ、深さ５０，３０，
２０，１０，５，２μｍのスリットを設けた金型）をト
ランスファプレスにセットし、それぞれの封止材を用い
て成形し、金型開放１０秒後に樹脂溜り部分をショアＤ
型硬度計で測定した。アルミ（Ａｌ）ピール接着力は、
厚み約０．０３ｍｍのアルミホイルを金型に敷き成形し
た試験片（１２７×１２．７×４ｍｍ）をテンシロンを
用い、アルミホイルを引き剥がし、その時の引き剥がし
力（単位ｇ／ｃｍ）を測定した。測定値は、アズモール
ド（１８０℃／９０秒）時とアフターキュア（１７５℃
／５時間）後の２点を示した。連続成形性は、１ショッ
ト６０個の８０ピンＱＦＰを最大５０ショット成形しカ
ル部が金型にはりつきが起きるまでのショット数を測定
した。耐リフロー性は、半導体素子（８×１０ｍｍ）、
リードフレーム（ＥＦＴＥＣ６４Ｔ リングメッキ品）
からなるＱＦＰ（１４×２０×２．０ｍｍ）を上記条件
にて成形後（アズモールド１８０℃／９０秒、アフター
キュア１７５℃／５時間）、吸湿後熱処理（８５℃／８
５％ＲＨ＋ＩＲＲ（２４０℃／１０秒）をおこない、Ｓ
ＡＴ（超音波探傷装置）にてチップ上、インナーリード
上での剥離状況を観察評価した。上記試験結果を表２に
示す。これらの結果から判るように、本発明の半導体封
止用エポキシ樹脂組成物は、連続作業性、耐リフロー
性、高温放置性等に優れている。EXAMPLES Hereinafter, Examples and Comparative Examples of the present invention will be described.
The present invention will be described more specifically, but the present invention is not limited to these examples. Examples 1 to 5 Comparative Examples 1 to 6 First, after mixing and premixing each raw material in parts by weight shown in Table 1, a kneading temperature of 80 to 90 ° C. and a kneading time using a biaxial roll having a diameter of 10 inches were used. The mixture was kneaded for 7 to 12 minutes, cooled and pulverized to obtain an epoxy resin composition for semiconductor encapsulation.
Using this epoxy resin composition for sealing, a mold temperature of 180 ° C. and a molding pressure of 70 kgf / c were obtained using a transfer molding machine.
Molding was performed under the conditions of m 2 and a curing time of 90 seconds to prepare a test piece. Post-curing was performed at 175 ° C. for 6 hours. For the spiral flow, the flow distance was measured according to EMMI-66. The hardness at the time of heat was measured using a burr measurement mold (width 5 mm, depth 50, 30,
A mold having slits of 20, 10, 5, and 2 μm) was set in a transfer press, and molded using the respective sealing materials.
It was measured with a mold hardness tester. Aluminum (Al) peel adhesion
A test piece (127 × 12.7 × 4 mm) obtained by spreading an aluminum foil having a thickness of about 0.03 mm on a mold and peeling the aluminum foil using Tensilon, and measuring a peeling force (unit: g / cm) at that time. did. The measured values are as-molded (180 ° C / 90 seconds) and after-cured (175 ° C
/ 5 hours). The continuous formability was determined by forming 60 80-pin QFPs in one shot at a maximum of 50 shots and measuring the number of shots until the cull portion was stuck to the mold. The reflow resistance is as follows: semiconductor element (8 × 10 mm),
Lead frame (EFTEC64T ring plating product)
After forming a QFP (14 × 20 × 2.0 mm) comprising the above conditions (as mold 180 ° C./90 seconds, after cure 175 ° C./5 hours), heat treatment after moisture absorption (85 ° C./8)
5% RH + IRR (240 ° C / 10 seconds)
The peeling state on the chip and the inner lead was observed and evaluated by an AT (ultrasonic flaw detector). Table 2 shows the test results. As can be seen from these results, the epoxy resin composition for semiconductor encapsulation of the present invention is excellent in continuous workability, reflow resistance, high-temperature storage properties, and the like.
【００１４】[0014]
【表１】 [Table 1]
【００１５】[0015]
【表２】 [Table 2]
【００１６】[0016]
【発明の効果】本発明の半導体封止用エポキシ樹脂組成
物によれば、特定のエポキシ樹脂組成物にインデン樹脂
を配合することによりインサートとの接着力にすぐれ、
該組成物により封止された樹脂封止型半導体装置は、半
田付け時の耐熱性や信頼性に優れたものとなる。According to the epoxy resin composition for semiconductor encapsulation of the present invention, by blending an indene resin with a specific epoxy resin composition, the adhesive strength with an insert is excellent,
The resin-sealed semiconductor device sealed with the composition has excellent heat resistance and reliability during soldering.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ０８Ｋ 3/00 Ｃ０８Ｋ 3/00 Ｈ０１Ｌ 23/29 Ｈ０１Ｌ 23/30 Ｒ 23/31 //(Ｃ０８Ｌ 63/00 45:00） Ｆターム(参考） 4J036 AD04 AD07 DA05 DA06 DA09 DB06 DB28 DD07 FB01 FB06 JA07 KA05 KA06 4M109 AA01 BA01 CA21 EA03 EA06 EB02 EB06 EB07 EB08 EB09 EB12 EB19 EC01 EC03 EC09──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) C08K 3/00 C08K 3/00 H01L 23/29 H01L 23/30 R 23/31 // (C08L 63/00 45:00) F term (reference) 4J036 AD04 AD07 DA05 DA06 DA09 DB06 DB28 DD07 FB01 FB06 JA07 KA05 KA06 4M109 AA01 BA01 CA21 EA03 EA06 EB02 EB06 EB07 EB08 EB09 EB12 EB19 EC01 EC03 EC09
Claims (4)
型エポキシ樹脂 【化１】 （式中、Ｒは水素原子または炭素数１〜４の低級アルキ
ル基を表し、ｍは０〜６の整数を示す。） （Ｂ）一般式（２）で示されるフェノールアラルキル樹
脂、 【化２】 （式中、ｐは０〜６の整数を表す。） （Ｃ）トリフェニルホスフィンとベンゾキノンの付加物 （Ｄ）無機充填材および （Ｅ）インデン樹脂を必須成分とし、インデン樹脂の配
合量がエポキシ樹脂１００重量部に対して２．５〜２０
重量部配合してなる半導体封止用エポキシ樹脂組成物。1. A biphenyl type epoxy resin represented by the general formula (1): ## STR1 ## (In the formula, R represents a hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, and m represents an integer of 0 to 6.) (B) A phenol aralkyl resin represented by the general formula (2): ] (In the formula, p represents an integer of 0 to 6.) (C) An adduct of triphenylphosphine and benzoquinone (D) An inorganic filler and (E) an indene resin are essential components, and the compounding amount of the indene resin is epoxy. 2.5-20 for 100 parts by weight of resin
An epoxy resin composition for semiconductor encapsulation which is blended by weight.
配合され、充填材の形状が５０％以上球状である請求項
１記載の半導体封止用エポキシ樹脂組成物。2. An inorganic filler comprising 70 to 85% by volume of the total composition.
The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the filler is blended and the shape of the filler is 50% or more spherical.
シ樹脂組成物により封止してなる樹脂封止型半導体装
置。3. A resin-sealed semiconductor device sealed with the epoxy resin composition for semiconductor sealing according to claim 1.
ムを用いたＬＯＣ構造である請求項３記載の樹脂封止型
半導体装置。4. The resin-sealed semiconductor device according to claim 3, wherein said resin-sealed semiconductor device has a LOC structure using a copper-based lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30234098A JP2000129085A (en) | 1998-10-23 | 1998-10-23 | Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30234098A JP2000129085A (en) | 1998-10-23 | 1998-10-23 | Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000129085A true JP2000129085A (en) | 2000-05-09 |
Family
ID=17907760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30234098A Withdrawn JP2000129085A (en) | 1998-10-23 | 1998-10-23 | Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000129085A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000290470A (en) * | 1999-04-05 | 2000-10-17 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2008120995A (en) * | 2006-10-17 | 2008-05-29 | Hitachi Chem Co Ltd | Epoxy resin composition and electronic component device |
| JP2009102622A (en) * | 2007-10-03 | 2009-05-14 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing, and electronic component device |
-
1998
- 1998-10-23 JP JP30234098A patent/JP2000129085A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000290470A (en) * | 1999-04-05 | 2000-10-17 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP4513136B2 (en) * | 1999-04-05 | 2010-07-28 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
| JP2008120995A (en) * | 2006-10-17 | 2008-05-29 | Hitachi Chem Co Ltd | Epoxy resin composition and electronic component device |
| JP2009102622A (en) * | 2007-10-03 | 2009-05-14 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing, and electronic component device |
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