JP2000127046A - Electrodeposition dresser for polishing by polisher - Google Patents
Electrodeposition dresser for polishing by polisherInfo
- Publication number
- JP2000127046A JP2000127046A JP10305995A JP30599598A JP2000127046A JP 2000127046 A JP2000127046 A JP 2000127046A JP 10305995 A JP10305995 A JP 10305995A JP 30599598 A JP30599598 A JP 30599598A JP 2000127046 A JP2000127046 A JP 2000127046A
- Authority
- JP
- Japan
- Prior art keywords
- coating
- layer
- thickness
- abrasive
- dresser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、精密仕上げ加工に
用いられるポリッシャの研磨用ドレッサ、とくに半導体
ＬＳＩデバイスの平坦化に用いられるポリッシャの研磨
用に好適なドレッサに関する。The present invention relates to a dresser for polishing a polisher used for precision finishing, and more particularly to a dresser suitable for polishing a polisher used for flattening a semiconductor LSI device.
【０００２】[0002]
【従来の技術】電子部品や光学部品の超精密、高品位仕
上げのために行われるポリッシングは、とくに半導体Ｌ
ＳＩデバイスにおいては、素材加工をはじめ各種積層膜
の平坦化において重要な加工技術であり、半導体の高記
憶容量化に対応して、その加工精度（面粗度、平坦
度）、加工品位（無欠陥、無歪み）、加工性能はより高
いものが求められている。2. Description of the Related Art Polishing performed for ultra-precision and high-quality finishing of electronic parts and optical parts is performed particularly by using semiconductor L.
In the SI device, it is an important processing technology in flattening various laminated films including material processing. In response to the increase in storage capacity of semiconductors, the processing accuracy (surface roughness, flatness) and processing quality (no quality) Defects, no distortion) and higher processing performance are required.
【０００３】ポリッシングは、ポリッシャ上に軟質砥粒
を散布して被加工物を押しつけることにより実施され、
軟質砥粒と被加工物間の化学的、機械的作用により材料
除去が行われ、最近ではＣＭＰ（Ｃｈｅｍｉｃａｌ ＆
Ｍｅｃｈａｎｉｃａｌ Ｐｏｌｉｓｈｉｎｇ）と称さ
れる技術が注目を浴びている。このＣＭＰ加工装置とし
ては、たとえば特開平７−２９７１９５号公報や特開平
９−１１１１１７号公報に記載の装置がある。[0003] Polishing is performed by spraying soft abrasive grains on a polisher and pressing a workpiece.
Material removal is performed by a chemical and mechanical action between the soft abrasive and the workpiece, and recently, CMP (Chemical &
A technique called “Mechanical Polishing” has attracted attention. As the CMP processing apparatus, there are, for example, apparatuses described in JP-A-7-297195 and JP-A-9-111117.
【０００４】このようなＣＭＰ加工装置によりＬＳＩデ
バイスウエハをポリッシングする場合、ポリッシャとし
ては一定の弾性率、繊維形状、形状パターンを持ったポ
リウレタン製の研磨パッドが使用され、軟質砥粒として
は、ＳｉＯ2 が一般的であり、その他、ＣａＣＯ3 、Ｂ
ａＣＯ3 などの有効性も議論されている。いずれにして
も、ポリッシュは機械加工としては最終工程であり、平
面度１μｍ前後、面粗度ＲMAX １０Åレベルが達成され
なければならない。When an LSI device wafer is polished by such a CMP processing apparatus, a polishing pad made of polyurethane having a constant elastic modulus, a fiber shape and a shape pattern is used as a polisher, and SiO polishing is used as a soft abrasive. 2 is common, and CaCO 3 , B
The effectiveness of aCO 3 etc. is also being discussed. In any case, polishing is the final step in machining, and a flatness of about 1 μm and a surface roughness R MAX of 10 ° must be achieved.
【０００５】このようなポリッシング加工工程におい
て、安定した加工性能を維持するためには、ポリッシャ
表面の定期的修正が必要であり、ダイヤモンドなどの超
砥粒を電着させた電着ドレッサを使用し、ＣＭＰ加工と
同時に、または定期的にポリッシャ表面劣化層を除去す
るとともに、適正な面状態を得るようにしている。In such a polishing process, it is necessary to periodically correct the surface of the polisher in order to maintain stable processing performance, and an electrodeposition dresser in which superabrasive grains such as diamond are electrodeposited is used. The polisher surface deterioration layer is removed at the same time as the CMP processing or periodically, and an appropriate surface state is obtained.
【０００６】[0006]
【発明が解決しようとする課題】ところで、ＬＳＩデバ
イスウエハのＣＭＰ加工において、積層が少ないうちは
酸化シリコンの層間絶縁膜のみの研磨であるが、積層が
進むにつれて、平坦化するためにはデバイスされた金属
配線さえも研磨しなければならず、このような場合はと
くにメタルＣＭＰ加工と呼ばれている。By the way, in the CMP processing of an LSI device wafer, only the interlayer insulating film of silicon oxide is polished as long as the lamination is small. Even the metal wiring must be polished, and such a case is particularly called metal CMP processing.
【０００７】このメタルＣＭＰ加工においては、デバイ
スウエハのＡｌ、Ｗ、Ｃｕなどの金属配線を研磨するた
めに、研磨剤としてアルミナ系のｐＨが１〜４の強酸性
の研磨剤が使用される。このため、ポリッシャ表面のド
レッシングの際に、ポリッシャ表面に付着残留する強酸
性の研磨剤により電着ドレッサのＮｉなどのメッキ層お
よびＦｅなどの母材の金属が侵されてポリッシャ表面に
溶出してしまうという問題がある。In the metal CMP process, an alumina-based strongly acidic abrasive having a pH of 1 to 4 is used as an abrasive in order to polish metal wiring such as Al, W, and Cu of a device wafer. Therefore, at the time of dressing the polisher surface, a strongly acidic abrasive adhered to and left on the polisher surface attacks the plating layer such as Ni of the electrodeposition dresser and the base metal such as Fe and elutes on the polisher surface. Problem.
【０００８】また、電着ドレッサのメッキ層の侵食によ
りダイヤモンドなどの砥粒が脱落し、この脱落した砥粒
がポリッシャ表面に付着してデバイスウエハの表面に損
傷を与えるという問題がある。Another problem is that abrasive grains such as diamond fall off due to erosion of the plating layer of the electrodeposition dresser, and the dropped abrasive grains adhere to the polisher surface and damage the surface of the device wafer.
【０００９】本発明において解決すべき課題は、ＣＭＰ
加工などの精密仕上げ加工に用いられるポリッシャの研
磨用ドレッサにおいて、ドレッサの砥材層に耐酸性を付
与して強酸性の研磨剤使用時の砥材層の侵食を防止する
ことにある。The problem to be solved in the present invention is CMP.
In a dresser for polishing a polisher used for precision finishing such as processing, an object of the present invention is to provide an abrasive layer of the dresser with acid resistance to prevent erosion of the abrasive layer when a strongly acidic abrasive is used.
【００１０】[0010]
【課題を解決するための手段】上記課題は、ポリッシャ
研磨用電着ドレッサの砥材層の表面に厚さ１〜５μｍの
耐酸性非金属物質からなる被覆層を形成することによっ
て達成できる。The above object can be achieved by forming a coating layer of an acid-resistant nonmetallic material having a thickness of 1 to 5 .mu.m on the surface of an abrasive layer of an electrodeposition dresser for polisher polishing.
【００１１】電着ドレッサは、ダイヤモンドなどの砥粒
がニッケルなどのメッキ層によって鉄などの母材に保持
されているものである。本発明の電着ドレッサにおいて
は、砥材層の表面に耐酸性非金属物質からなる被覆層を
形成することによって、ＣＭＰ加工などにおいて強酸性
の研磨剤が使用されたときでも、砥材層のなかのメッキ
層および母材の金属が強酸性の研磨剤によって侵食され
ることがなく、金属の溶出や砥粒の脱落が防止される。The electrodeposition dresser is one in which abrasive grains such as diamond are held on a base material such as iron by a plating layer such as nickel. In the electrodeposition dresser of the present invention, by forming a coating layer made of an acid-resistant nonmetallic substance on the surface of the abrasive layer, even when a strongly acidic abrasive is used in CMP processing or the like, the abrasive layer is The metal in the plating layer and the base metal therein is not eroded by the strongly acidic abrasive, so that the elution of the metal and the removal of the abrasive grains are prevented.
【００１２】ここで、耐酸性非金属物質の被覆厚さは１
〜５μｍの範囲が最適である。耐酸性非金属物質の被覆
厚さが１μｍ未満では、ＣＭＰ加工中に被覆材が加工圧
に耐えきれず剥がれてしまうので、強酸性の研磨剤によ
る侵食を防止することができず、一方被覆厚さが５μｍ
超になると、被覆処理に多大な工数を要し、ドレッサの
生産効率が悪くなる。Here, the coating thickness of the acid-resistant nonmetallic substance is 1
The range of ５5 μm is optimal. If the coating thickness of the acid-resistant non-metallic substance is less than 1 μm, the coating material cannot withstand the processing pressure during the CMP process and peels off. Therefore, it is not possible to prevent erosion by a strongly acidic abrasive. Is 5μm
If it is excessive, a large number of man-hours are required for the coating process, and the production efficiency of the dresser deteriorates.
【００１３】この被覆層は、摩擦係数が０．２０以下
で、Ｈｖ硬度が５００以上であることが望ましい。摩擦
係数を０．２０以下とすることによって、研磨時のスラ
リーの供給、排出性が被覆なしの場合よりも向上する。
摩擦係数が０．２０より大きくなると、加工時の切粉の
排出が悪くなり、早期に目詰まりを起こして切れ味が低
下する。また、硬度がＨｖ５００未満であると、加工中
に切り粉による損傷を受けやすくなる。This coating layer desirably has a friction coefficient of 0.20 or less and an Hv hardness of 500 or more. By setting the friction coefficient to 0.20 or less, the supply and discharge properties of the slurry during polishing are improved as compared with the case without the coating.
If the coefficient of friction is greater than 0.20, the discharge of chips during processing will be poor, causing early clogging and reduced sharpness. Further, if the hardness is less than Hv500, it is easily damaged by cutting chips during processing.
【００１４】ここで、本明細書でいう摩擦係数とは、後
述する図３に示す形状のテストピースの上面に鋼棒の先
端を押し付け、テストピースを回転させたときの鋼棒先
端に作用する摩擦力Ｆと押し付け荷重Ｗの比Ｆ／Ｗをも
って摩擦係数μとしたものである。鋼棒の材質はクロム
モリブデン鋼（ＳＣＭ４３５，硬度ＨRC＝５０）で、先
端に半径２ｍｍの丸みを付けたものである。テストピー
スの回転数は４００ｒｐｍ、鋼棒の押し付け荷重は２．
５Ｎ、押し付け位置はテストピース上面中心から７．５
ｍｍの位置、すなわち回転径１５ｍｍとなる位置とす
る。Here, the friction coefficient referred to in the present specification means the tip of a steel rod pressed against the upper surface of a test piece having a shape shown in FIG. The friction coefficient μ is defined as the ratio F / W between the frictional force F and the pressing load W. The material of the steel rod is chromium molybdenum steel (SCM435, hardness H RC = 50), and its tip is rounded with a radius of 2 mm. The rotation speed of the test piece was 400 rpm, and the pressing load of the steel rod was 2.
5N, the pressing position is 7.5 from the center of the upper surface of the test piece
mm, that is, a position having a rotation diameter of 15 mm.
【００１５】被覆する耐酸性非金属物質としては、アル
ミナ系の強酸性の研磨剤に対して侵食されることがな
く、かつ、潤滑性が高く、硬度も高いという特性を有す
る非金属物質が適しており、たとえばダイヤモンドライ
クカーボン（ＤＬＣ）や二硫化モリブデン（ＭｏＳ2 ）
を好適に用いることができる。As the acid-resistant nonmetallic substance to be coated, a nonmetallic substance which is not eroded by an alumina-based strongly acidic abrasive, has high lubricity, and has high hardness is suitable. Such as diamond-like carbon (DLC) and molybdenum disulfide (MoS 2 )
Can be suitably used.
【００１６】ＤＬＣは、硬度が非常に高く、潤滑性にも
優れているという点で被覆物質として適している。ＤＬ
Ｃの摩擦係数は約０．１５であり、Ｈｖ硬度は約２００
０である。また、ＭｏＳ2 は、摩擦係数が非常に低く、
かつ硬度も高いという点で被覆物質として適している。
ＭｏＳ2 の摩擦係数は０．０２〜０．０５であり、Ｈｖ
硬度は約５００である。DLC is suitable as a coating material in that it has a very high hardness and excellent lubricity. DL
C has a coefficient of friction of about 0.15 and an Hv hardness of about 200.
0. Also, MoS 2 has a very low coefficient of friction,
It is suitable as a coating material in that it has high hardness.
The friction coefficient of MoS 2 is 0.02 to 0.05,
The hardness is about 500.
【００１７】ＤＬＣを被覆する場合は、ＤＬＣの成分元
素を分解、イオン化し、これを蒸着することにより、砥
材層の表面に被覆する。ＭｏＳ2 の場合も同様である。When the DLC is coated, the component elements of the DLC are decomposed and ionized, and the DLC is deposited to cover the surface of the abrasive material layer. In the case of MoS 2 is the same.
【００１８】ＤＬＣやＭｏＳ2 を被覆するに際して、被
覆層の密着性を高めるために、被覆を施す面の面粗度を
ＲMAX ０．５〜３μｍ程度に調節しておくとよい。この
面粗度の調節は、たとえばショットブラスト処理などに
より行うことができる。When coating with DLC or MoS 2 , the surface to be coated is preferably adjusted to a surface roughness R MAX of about 0.5 to 3 μm in order to enhance the adhesion of the coating layer. The adjustment of the surface roughness can be performed by, for example, shot blasting.
【００１９】[0019]
【発明の実施の形態】図１は本発明の実施形態における
電着ドレッサのプレートを模式的に示す図であり、
（ａ）は平面図、（ｂ）は（ａ）のＡ−Ａ線断面図であ
る。図２は図１のプレートの砥材層および被覆層の形成
手順を示す説明図である。FIG. 1 is a view schematically showing a plate of an electrodeposition dresser according to an embodiment of the present invention.
2A is a plan view, and FIG. 2B is a sectional view taken along line AA of FIG. FIG. 2 is an explanatory view showing a procedure for forming the abrasive layer and the coating layer of the plate of FIG.
【００２０】本実施形態の電着ドレッサのプレート１０
は、円盤状の母材１１と、母材１１の一面側に形成され
た砥材層１２と、砥材層１２の表面に被覆された被覆層
１５とで構成されており、母材１１の直径は約１００ｍ
ｍ、厚さは約７ｍｍであり、砥粒層１２の厚さは０．１
〜０．５ｍｍ、被覆層１５の厚さは約５μｍである。The plate 10 of the electrodeposition dresser of the present embodiment
Is composed of a disc-shaped base material 11, an abrasive layer 12 formed on one surface of the base material 11, and a coating layer 15 coated on the surface of the abrasive layer 12. The diameter is about 100m
m, the thickness is about 7 mm, and the thickness of the abrasive layer 12 is 0.1
0.5 mm, and the thickness of the coating layer 15 is about 5 μm.
【００２１】砥材層１２は砥粒１３とＮｉメッキ層１４
とにより構成されており、図２の（ａ）から（ｄ）に示
す手順により形成される。図２において、（ａ）は砥材
層形成前の母材１１を示し、（ｂ）は砥材層を形成しな
い部分に絶縁体２１をコーティングしてマスキングした
状態を示す。The abrasive material layer 12 includes abrasive grains 13 and a Ni plating layer 14.
And is formed by the procedure shown in FIGS. 2A shows the base material 11 before the formation of the abrasive layer, and FIG. 2B shows a state in which a portion where the abrasive layer is not formed is coated with the insulator 21 and masked.
【００２２】母材１１をマスキングした状態でメッキ浴
３１中に浸漬し、まず、Ｎｉメッキ層１４ａで砥粒１３
を保持する仮固定を行う（同図の（ｃ））。この仮固定
工程の後に、浮いた砥粒を除去して所定の砥粒密度とな
るようにする。The base material 11 is immersed in a plating bath 31 in a masked state.
Is held temporarily ((c) in the figure). After this temporary fixing step, the floating abrasive grains are removed so that a predetermined abrasive grain density is obtained.
【００２３】ついで、砥粒径の６０〜７０％に相当する
厚さのＮｉメッキ層１４（図１（ｂ）参照）で砥粒１３
を固定する埋込固定を行う（同図の（ｄ））。この後、
絶縁体２１を剥がし、配線除去、母材磨きなどを施して
プレート半製品１０ａとする。本実施形態においてはこ
の後、ショット吹き付け機３２によりＮｉメッキ層１４
表面にショットブラスト処理を施して面粗度を０．５〜
３μｍ程度に調節し（同図の（ｅ））、さらにその後、
被覆装置３３内でプレート半製品１０ａの表面にＤＬＣ
またはＭｏＳ2 の被覆層１５を形成して、プレート１０
（図１参照）とする。Next, the Ni plating layer 14 (see FIG. 1B) having a thickness corresponding to 60 to 70% of the abrasive grain
Is fixed ((d) in the figure). After this,
The insulator 21 is peeled off, the wiring is removed, the base material is polished, etc., to obtain a plate semi-finished product 10a. In the present embodiment, thereafter, the Ni plating layer 14 is
Apply surface shot blasting to reduce surface roughness from 0.5 to
Adjust it to about 3 μm ((e) in the figure), and then
DLC is applied to the surface of the semi-finished plate 10a in the coating device 33.
Alternatively, a coating layer 15 of MoS 2 is formed and the plate 10
(See FIG. 1).
【００２４】図３は電着ドレッサの一例を示す斜視図で
あり、図１のプレート１０を、外径約１００ｍｍのフラ
ンジ４１に取り付け、裏面からネジで固定して電着ドレ
ッサ４０としたものである。この電着ドレッサ４０を、
図４に示すようなＣＭＰ加工装置のポリッシャ５０表面
の研磨パッド５１に押し付けてドレッシングを行う。な
お図中、６０はシリコンウエハなどの被研磨材の吸着盤
であり、７０は研磨スラリーの供給装置である。メタル
ＣＭＰ加工の場合は、研磨スラリーとして強酸性の研磨
スラリーが使用される。FIG. 3 is a perspective view showing an example of an electrodeposition dresser. The plate 10 shown in FIG. 1 is attached to a flange 41 having an outer diameter of about 100 mm, and is fixed with screws from the back to form an electrodeposition dresser 40. is there. This electrodeposition dresser 40
Dressing is performed by pressing against a polishing pad 51 on the surface of a polisher 50 of a CMP processing apparatus as shown in FIG. In the drawing, reference numeral 60 denotes a suction disk for a material to be polished such as a silicon wafer, and reference numeral 70 denotes a polishing slurry supply device. In the case of metal CMP processing, a strongly acidic polishing slurry is used as the polishing slurry.
【００２５】〔試験例〕図１〜図３に示した本発明実施
形態の電着ドレッサでＤＬＣを被覆したドレッサ（発明
品１）とＭｏＳ2 を被覆したドレッサ（発明品２）、お
よび被覆層のない従来の電着ドレッサ（従来品）を用い
て加工試験を行った。加工条件は以下の通りである。 使用機械：タクマ機 研磨パッド：発泡ポリウレタン 外径３００ｍｍ ドレッサ：直径１００ｍｍ、厚さ７ｍｍのプレート ドレッサ回転数：２０ｒｐｍ テーブル回転数：３０ｒｐｍ 加工圧 ：２０ｋｇｆ 加工時間：２時間[Test Example] A dresser coated with DLC (Invention 1), a dresser coated with MoS 2 (Invention 2), and a coating layer shown in FIGS. 1 to 3 according to the embodiment of the present invention. A processing test was performed using a conventional electrodeposition dresser without any (conventional product). The processing conditions are as follows. Machine used: Takuma machine Polishing pad: Foamed polyurethane Outer diameter 300mm Dresser: Plate with diameter 100mm, thickness 7mm Dresser rotation speed: 20rpm Table rotation speed: 30rpm Processing pressure: 20kgf Processing time: 2 hours
【００２６】図５はドレッサの加工試験方法を示す概略
図であり、同図の（ａ）は正面図、（ｂ）は平面図であ
る。図に示すように、タクマ機の回転テーブルＴ上に研
磨パッドＷを固定し、電着ドレッサＫを回転させながら
研磨パッドＷに押し付ける加工試験である。ここで、メ
タルＣＭＰ加工の場合に使用する強酸性の研磨スラリー
に相当するｐＨ２のアルミナ系の研磨スラリーを研磨パ
ッドＷに１リットル／ｍｉｎ供給した。FIGS. 5A and 5B are schematic views showing a dressing processing test method, wherein FIG. 5A is a front view and FIG. 5B is a plan view. As shown in the figure, this is a processing test in which a polishing pad W is fixed on a rotary table T of a Takuma machine and pressed against the polishing pad W while rotating an electrodeposition dresser K. Here, an alumina-based polishing slurry having a pH of 2 corresponding to the strongly acidic polishing slurry used in the metal CMP processing was supplied to the polishing pad W at a rate of 1 liter / min.
【００２７】加工試験結果を図６〜図８に示す。図６は
ドレッサからの金属分の溶出量を示す図で、研磨スラリ
ーの排液中の金属成分を％で表したものである。同図に
示すように、発明品１、２ではドレッサからの金属分の
溶出はみられなかったが、従来品ではＦｅ，Ｎｉの検出
量が合わせて約４５％あり、ドレッサからのＦｅ，Ｎｉ
の溶出量が多いことがわかる。The results of the processing test are shown in FIGS. FIG. 6 is a graph showing the elution amount of the metal component from the dresser, in which the metal component in the drainage of the polishing slurry is expressed in%. As shown in the figure, no metal elution from the dresser was observed in Invention Products 1 and 2, but in the conventional product , the detected amount of Fe and Ni was about 45% in total, and Fe and Ni from the dresser were combined.
It can be seen that the elution amount of is large.
【００２８】図７は砥粒の脱落程度を示す図で、同図に
示すように、従来品に比して発明品１、２では砥粒の脱
落個数が１／１０に減少している。同図縦軸に示す脱落
個数は、ドレッサ表面の３箇所の２０ｍｍ×２０ｍｍの
面積内の砥粒の脱落個数を顕微鏡を用いて測定したもの
である。FIG. 7 is a graph showing the degree of abrasive grains falling off. As shown in FIG. 7, the number of abrasive grains falling off is reduced to 1/10 in the inventions 1 and 2 as compared with the conventional products. The number of shed particles shown on the vertical axis of the figure is obtained by measuring the number of shed abrasive particles within an area of 20 mm × 20 mm at three places on the dresser surface using a microscope.
【００２９】図８は加工能率を示す図で、同図に示すよ
うに、従来品は、加工初期においては高い加工能率を示
すが、加工が進むにつれて能率の低下が著しい。これに
対し発明品１、２は、加工初期には従来品に比して加工
能率が低いが、その後の加工能率の低下は少なく、安定
した加工性能を示し、寿命も加工品に比して２〜３倍に
延長した。なお図中、比較品として示すデータは、被覆
層の摩擦係数が約０．４のセラミックス（ＴｉＮ）被覆
を施したドレッサの加工能率を示すものであり、摩擦係
数が大きいことにより加工時の切粉の排出が悪くなり、
早期に目詰まりを起こして切れ味が低下し、従来品と同
程度の加工能率しか得られなかった。FIG. 8 is a graph showing the processing efficiency. As shown in FIG. 8, the conventional product shows a high processing efficiency at the beginning of processing, but the efficiency is remarkably reduced as the processing proceeds. On the other hand, the invention products 1 and 2 have a lower processing efficiency in the initial stage of processing than the conventional products, but show little reduction in the processing efficiency thereafter, exhibit stable processing performance, and have a longer life than the processed products. It was extended 2-3 times. The data shown as comparative products in the figure show the processing efficiency of a dresser coated with ceramics (TiN) with a friction coefficient of the coating layer of about 0.4. The discharge of the powder becomes worse,
Clogging occurred early and the sharpness was reduced, and only a processing efficiency equivalent to that of the conventional product was obtained.
【００３０】[0030]
【発明の効果】本発明によって以下の効果を奏すること
ができる。According to the present invention, the following effects can be obtained.
【００３１】（１）砥材層の表面に耐酸性非金属物質か
らなる被覆層を形成することによって、強酸性の研磨剤
が使用されたときでも、砥材層の中のメッキ層および母
材の金属が強酸性の研磨剤によって侵食されることがな
く、ドレッサからの金属の溶出や砥粒の脱落を防止する
ことができる。(1) By forming a coating layer made of an acid-resistant nonmetallic substance on the surface of the abrasive layer, the plating layer and the base material in the abrasive layer can be used even when a strongly acidic abrasive is used. The metal is not eroded by the strongly acidic abrasive, and the elution of the metal from the dresser and the falling off of the abrasive grains can be prevented.
【００３２】（２）被覆層の摩擦係数を０．２０以下、
Ｈｖ硬度を５００以上とすることにより、研磨時のスラ
リーの供給、排出性を向上させることができ、また、加
工中の切り粉による損傷を防止することができる。(2) The coefficient of friction of the coating layer is 0.20 or less,
By setting the Hv hardness to 500 or more, the supply and discharge properties of the slurry during polishing can be improved, and damage due to cutting chips during processing can be prevented.
【００３３】（３）被覆する耐酸性非金属物質としてダ
イヤモンドライクカーボンや二硫化モリブデンを用いる
ことにより、加工初期から安定した切れ味を持続するこ
とができ、ドレッサの寿命を延ばすことができる。(3) By using diamond-like carbon or molybdenum disulfide as the acid-resistant nonmetallic substance to be coated, stable sharpness can be maintained from the beginning of processing and the life of the dresser can be extended.
【図１】 本発明の実施形態における電着ドレッサのプ
レートを模式的に示す図であり、（ａ）は平面図、
（ｂ）は（ａ）のＡ−Ａ線断面図である。FIG. 1 is a diagram schematically showing a plate of an electrodeposition dresser according to an embodiment of the present invention, wherein (a) is a plan view,
(B) is a sectional view taken along line AA of (a).
【図２】 図１のプレートの砥材層および被覆層の形成
手順を示す説明図である。FIG. 2 is an explanatory view showing a procedure for forming an abrasive layer and a coating layer of the plate of FIG. 1;
【図３】 電着ドレッサの一例を示す斜視図である。FIG. 3 is a perspective view showing an example of an electrodeposition dresser.
【図４】 電着ドレッサの使用状態を示す斜視図であ
る。FIG. 4 is a perspective view showing a use state of an electrodeposition dresser.
【図５】 電着ドレッサの加工試験方法を示す概略図で
ある。FIG. 5 is a schematic view showing a processing test method for an electrodeposition dresser.
【図６】 電着ドレッサの試験結果を示す図である。FIG. 6 is a view showing test results of an electrodeposition dresser.
【図７】 電着ドレッサの試験結果を示す図である。FIG. 7 is a view showing test results of an electrodeposition dresser.
【図８】 電着ドレッサの試験結果を示す図である。FIG. 8 is a view showing test results of an electrodeposition dresser.
１０ プレート １０ａ プレート半製品 １１ 母材 １２ 砥材層 １３ 砥粒 １４，１４ａ Ｎｉメッキ層 １５ 被覆層 ２１ 絶縁体 ３１ メッキ浴 ３２ ショット吹き付け機 ３３ 被覆装置 ４０ 電着ドレッサ ４１ フランジ ５０ ポリッシャ ５１ 研磨パッド ６０ 吸着盤 ７０ 研磨スラリー供給装置 Ｋ 電着ドレッサ Ｔ 回転テーブル Ｗ 研磨パッド Reference Signs List 10 Plate 10a Plate semi-finished product 11 Base material 12 Abrasive layer 13 Abrasive grains 14, 14a Ni plating layer 15 Coating layer 21 Insulator 31 Plating bath 32 Shot spraying machine 33 Coating device 40 Electroplated dresser 41 Flange 50 Polisher 51 Polishing pad 60 Adsorber 70 Polishing slurry supply device K Electroplated dresser T Rotary table W Polishing pad
───────────────────────────────────────────────────── フロントページの続き (72)発明者 原口 研郎 愛知県津島市神守町字二ノ割16番地の１ ノリタケダイヤ株式会社名古屋工場内 Ｆターム(参考） 3C058 AA07 AA19 CA01 CB10 DA12 3C063 AA02 AB05 BA37 CC11 CC13 EE26 FF23 FF30 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kenro Haraguchi No. 16 Nominori Daiya Co., Ltd. Nagoya Plant, No. 16 Jinmoricho, Tsushima City, Aichi Prefecture F term (reference) 3C058 AA07 AA19 CA01 CB10 DA12 3C063 AA02 AB05 BA37 CC11 CC13 EE26 FF23 FF30
Claims (3)
１〜５μｍの耐酸性非金属物質からなる被覆層を形成し
たポリッシャ研磨用電着ドレッサ。1. An electrodeposition dresser for polisher polishing, wherein a coating layer made of an acid-resistant nonmetallic material having a thickness of 1 to 5 μm is formed on the entire surface of a dresser including an abrasive layer.
あり、硬度がＨｖ５００以上である請求項１記載のポリ
ッシャ研磨用電着ドレッサ。2. The electrodeposition dresser for polishing polisher according to claim 1, wherein the coating layer has a coefficient of friction of 0.20 or less and a hardness of Hv 500 or more.
イクカーボンまたは二硫化モリブデンである請求項１，
２記載のポリッシャ研磨用電着ドレッサ。3. The method according to claim 1, wherein the acid-resistant nonmetallic substance is diamond-like carbon or molybdenum disulfide.
2. An electrodeposition dresser for polishing a polisher according to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10305995A JP2000127046A (en) | 1998-10-27 | 1998-10-27 | Electrodeposition dresser for polishing by polisher |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10305995A JP2000127046A (en) | 1998-10-27 | 1998-10-27 | Electrodeposition dresser for polishing by polisher |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000127046A true JP2000127046A (en) | 2000-05-09 |
Family
ID=17951810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10305995A Pending JP2000127046A (en) | 1998-10-27 | 1998-10-27 | Electrodeposition dresser for polishing by polisher |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000127046A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001347450A (en) * | 2000-06-08 | 2001-12-18 | Promos Technologies Inc | Chemical machinery polishing device |
| KR20110024393A (en) * | 2009-09-02 | 2011-03-09 | 주식회사 동진쎄미켐 | Polishing pad comprising nano fiber with protrusion |
| JP2011507716A (en) * | 2007-12-28 | 2011-03-10 | 新韓鑽石工業股▲ふん▼有限公司 | Hydrophobic cutting tool and manufacturing method thereof |
| JP2012528735A (en) * | 2009-06-02 | 2012-11-15 | サンーゴバン アブレイシブズ，インコーポレイティド | Corrosion-resistant CMP conditioning tool and method for making and using the same |
| US8657652B2 (en) | 2007-08-23 | 2014-02-25 | Saint-Gobain Abrasives, Inc. | Optimized CMP conditioner design for next generation oxide/metal CMP |
| US8951099B2 (en) | 2009-09-01 | 2015-02-10 | Saint-Gobain Abrasives, Inc. | Chemical mechanical polishing conditioner |
| US9022840B2 (en) | 2009-03-24 | 2015-05-05 | Saint-Gobain Abrasives, Inc. | Abrasive tool for use as a chemical mechanical planarization pad conditioner |
| TWI755069B (en) * | 2020-09-21 | 2022-02-11 | 合晶科技股份有限公司 | Method for dressing polish pad |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5259388A (en) * | 1975-11-11 | 1977-05-16 | Inoue Japax Res Inc | Grinding tool |
| JPH06126639A (en) * | 1992-10-21 | 1994-05-10 | Asahi Daiyamondo Kogyo Kk | Inner circumferential blade diamond wheel |
| JPH09239663A (en) * | 1996-03-07 | 1997-09-16 | Speedfam Co Ltd | Polishing tool |
| JPH1058306A (en) * | 1996-08-09 | 1998-03-03 | Mitsubishi Materials Corp | Dressing device for abrasive cloth and grinding wheel for dressing abrasive cloth |
-
1998
- 1998-10-27 JP JP10305995A patent/JP2000127046A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5259388A (en) * | 1975-11-11 | 1977-05-16 | Inoue Japax Res Inc | Grinding tool |
| JPH06126639A (en) * | 1992-10-21 | 1994-05-10 | Asahi Daiyamondo Kogyo Kk | Inner circumferential blade diamond wheel |
| JPH09239663A (en) * | 1996-03-07 | 1997-09-16 | Speedfam Co Ltd | Polishing tool |
| JPH1058306A (en) * | 1996-08-09 | 1998-03-03 | Mitsubishi Materials Corp | Dressing device for abrasive cloth and grinding wheel for dressing abrasive cloth |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001347450A (en) * | 2000-06-08 | 2001-12-18 | Promos Technologies Inc | Chemical machinery polishing device |
| US8657652B2 (en) | 2007-08-23 | 2014-02-25 | Saint-Gobain Abrasives, Inc. | Optimized CMP conditioner design for next generation oxide/metal CMP |
| JP2011507716A (en) * | 2007-12-28 | 2011-03-10 | 新韓鑽石工業股▲ふん▼有限公司 | Hydrophobic cutting tool and manufacturing method thereof |
| US9022840B2 (en) | 2009-03-24 | 2015-05-05 | Saint-Gobain Abrasives, Inc. | Abrasive tool for use as a chemical mechanical planarization pad conditioner |
| JP2012528735A (en) * | 2009-06-02 | 2012-11-15 | サンーゴバン アブレイシブズ，インコーポレイティド | Corrosion-resistant CMP conditioning tool and method for making and using the same |
| US8905823B2 (en) | 2009-06-02 | 2014-12-09 | Saint-Gobain Abrasives, Inc. | Corrosion-resistant CMP conditioning tools and methods for making and using same |
| US8951099B2 (en) | 2009-09-01 | 2015-02-10 | Saint-Gobain Abrasives, Inc. | Chemical mechanical polishing conditioner |
| KR20110024393A (en) * | 2009-09-02 | 2011-03-09 | 주식회사 동진쎄미켐 | Polishing pad comprising nano fiber with protrusion |
| KR101701152B1 (en) * | 2009-09-02 | 2017-02-01 | 주식회사 동진쎄미켐 | Polishing pad comprising nano fiber with protrusion |
| TWI755069B (en) * | 2020-09-21 | 2022-02-11 | 合晶科技股份有限公司 | Method for dressing polish pad |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2896657B2 (en) | Dresser and manufacturing method thereof | |
| US7371152B1 (en) | Non-uniform subaperture polishing | |
| US6517424B2 (en) | Protective coatings for CMP conditioning disk | |
| EP1722926B1 (en) | Undulated pad conditioner and method of using same | |
| JPH0639729A (en) | Precision grinding wheel and its manufacture | |
| JP2000127046A (en) | Electrodeposition dresser for polishing by polisher | |
| US4835909A (en) | Surface treatment of disk-shaped nickel-plated aluminum substrates | |
| WO2000078504A1 (en) | Method and apparatus for increasing the lifetime of a workpiece retaining structure and conditioning a polishing surface | |
| JP3679882B2 (en) | Polishing cloth dresser and manufacturing method thereof | |
| JP2001210613A (en) | Pad conditioner for cmp | |
| JP2012232388A (en) | Dresser for abrasive cloth | |
| JP2002239905A (en) | Pad conditioner for cmp, and method for manufacturing the same | |
| JP2001150351A (en) | Electrodeposition grinding wheel for dressing | |
| JP5957317B2 (en) | Dresser for polishing cloth and method for producing the same | |
| JP3797948B2 (en) | Diamond tools | |
| JP5082114B2 (en) | Manufacturing method of carrier for holding object to be polished | |
| JP2001239449A (en) | Pad conditioner for cmp | |
| JP2009196057A (en) | Thin-bladed whetstone and its manufacturing method | |
| KR200303718Y1 (en) | CMP pad conditioner | |
| JPH10134316A (en) | Method for working magnetic head | |
| JP3482313B2 (en) | Dresser for polishing cloth for semiconductor substrate and method of manufacturing the same | |
| JP2000141204A (en) | Dressing device, and polishing device and cmp device using the same | |
| JP3187013B2 (en) | Conditioner manufacturing method | |
| JP2003103464A (en) | Diamond coating dresser | |
| JP4858507B2 (en) | Carrier for holding an object to be polished |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071101 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 6 Free format text: PAYMENT UNTIL: 20081101 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091101 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091101 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20101101 |
|
| LAPS | Cancellation because of no payment of annual fees |