JP2000106413A - Heat sink and manufacture thereof - Google Patents
Heat sink and manufacture thereofInfo
- Publication number
- JP2000106413A JP2000106413A JP37639598A JP37639598A JP2000106413A JP 2000106413 A JP2000106413 A JP 2000106413A JP 37639598 A JP37639598 A JP 37639598A JP 37639598 A JP37639598 A JP 37639598A JP 2000106413 A JP2000106413 A JP 2000106413A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- heat sink
- film layer
- diamond thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 497
- 239000010432 diamond Substances 0.000 claims abstract description 348
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 345
- 229910052802 copper Inorganic materials 0.000 claims abstract description 88
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 41
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 40
- 230000001678 irradiating effect Effects 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 291
- 239000010409 thin film Substances 0.000 claims description 231
- 239000010949 copper Substances 0.000 claims description 189
- 239000000463 material Substances 0.000 claims description 117
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 73
- 239000012808 vapor phase Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 21
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 19
- 238000010306 acid treatment Methods 0.000 claims description 19
- 229910017604 nitric acid Inorganic materials 0.000 claims description 19
- 230000003746 surface roughness Effects 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 13
- 239000011148 porous material Substances 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 9
- 238000001308 synthesis method Methods 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 239000002585 base Substances 0.000 description 98
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 74
- 239000004065 semiconductor Substances 0.000 description 65
- 238000006243 chemical reaction Methods 0.000 description 48
- 239000007789 gas Substances 0.000 description 45
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 32
- 239000010937 tungsten Substances 0.000 description 32
- 230000017525 heat dissipation Effects 0.000 description 24
- 239000001257 hydrogen Substances 0.000 description 20
- 229910052739 hydrogen Inorganic materials 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 19
- 238000004050 hot filament vapor deposition Methods 0.000 description 16
- 238000005498 polishing Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 239000010419 fine particle Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000006748 scratching Methods 0.000 description 9
- 230000002393 scratching effect Effects 0.000 description 9
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 8
- 239000006061 abrasive grain Substances 0.000 description 8
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005219 brazing Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000007788 roughening Methods 0.000 description 5
- 238000012935 Averaging Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 229910016525 CuMo Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249961—With gradual property change within a component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249987—With nonvoid component of specified composition
- Y10T428/249988—Of about the same composition as, and adjacent to, the void-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249987—With nonvoid component of specified composition
- Y10T428/24999—Inorganic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T428/31678—Of metal
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、ヒートシンクお
よびその製造方法に関し、特に、レーザダイオード、Ｃ
ＰＵ（central processing unit ）、ＭＰＵ（micropro
cessor unit ）、高周波増幅素子などの比較的発熱量が
大きい半導体素子を搭載するヒートシンクであって、ダ
イヤモンド層と金属層からなる複数構造のヒートシンク
およびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat sink and a method of manufacturing the same, and more particularly, to a laser diode,
PU (central processing unit), MPU (micropro
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat sink on which a semiconductor element having a relatively large amount of heat, such as a heat sink unit and a high-frequency amplifier element, is mounted.
【０００２】[0002]
【従来の技術】上述の大出力半導体素子は、動作時に発
熱が大きい。その出力および動作周波数の向上に伴い、
これらの半導体素子の発生する熱が一層増大している。
さらには、電子機器の小型化、軽量化への市場の要求は
大きい。そのため、半導体素子の実装密度は増加の一途
をたどっている。このように、半導体素子の放熱量の増
大および実装密度の増加により、大出力半導体素子を実
装するモジュールに使用されるヒートシンクに要求され
る放熱特性は一層厳しさを増している。2. Description of the Related Art The above-described high-power semiconductor device generates a large amount of heat during operation. With the improvement of its output and operating frequency,
The heat generated by these semiconductor elements is further increasing.
Further, there is a great demand in the market for downsizing and weight reduction of electronic devices. For this reason, the mounting density of semiconductor elements is steadily increasing. As described above, due to the increase in the amount of heat dissipation of the semiconductor element and the increase in the mounting density, the heat dissipation characteristics required for the heat sink used in the module on which the high-output semiconductor element is mounted are becoming more severe.
【０００３】このような高い放熱性が要求されるヒート
シンクでは、熱伝導性の高い材料で構成されたヒートシ
ンクに半導体素子を搭載し、半導体素子が熱くなりすぎ
るのを防いでいる。たとえば、発熱量の大きな大出力ト
ランジスタやマイクロ波モノリシックＩＣ（ＭＭＩＣ）
などの大出力半導体素子を搭載するヒートシンクには、
熱伝導性が優れ、かつ誘電特性も優れた酸化ベリリウム
（ＢｅＯ）が従来から広く使用されてきた。In such a heat sink that requires high heat dissipation, a semiconductor element is mounted on a heat sink made of a material having high thermal conductivity to prevent the semiconductor element from becoming too hot. For example, a large output transistor or a microwave monolithic IC (MMIC) that generates a large amount of heat
Heat sinks with high power semiconductor elements such as
Beryllium oxide (BeO), which has excellent thermal conductivity and excellent dielectric properties, has been widely used.
【０００４】また、ダイヤモンドは、物質中最高の熱伝
導率を有することが知られている。このダイヤモンドを
半導体素子搭載用のヒートシンクへ応用する研究がなさ
れている。[0004] Also, diamond is known to have the highest thermal conductivity of any substance. Studies have been made to apply this diamond to heat sinks for mounting semiconductor elements.
【０００５】ダイヤモンドを用いたヒートシンクとし
て、全体がダイヤモンドからなるヒートシンクと、金属
の基板上にダイヤモンド膜が形成されたヒートシンクと
が開発されている。As a heat sink using diamond, a heat sink made entirely of diamond and a heat sink having a diamond film formed on a metal substrate have been developed.
【０００６】天然のダイヤモンドは稀少であり、また、
人工のダイヤモンドは高価であるため、ヒートシンク中
のダイヤモンドの量が多くなると、コストも上昇する。
したがって、全体がダイヤモンドからなるヒートシンク
は、ハイパワーレーザのような高発熱の半導体素子で、
代替品では除熱が不足して本来の性能が発揮できないよ
うな用途や、研究段階でコストの試算がなされない用途
にのみ使用される。金属の基板上にダイヤモンド膜を形
成したヒートシンクはコストの低減が必要となる製品に
用いられる。[0006] Natural diamonds are rare,
Since artificial diamonds are expensive, the more diamonds in the heat sink, the higher the cost.
Therefore, the heat sink made entirely of diamond is a semiconductor element with high heat generation such as high power laser,
Substitutes are used only for applications where heat removal is insufficient and the original performance cannot be achieved, or for applications where cost estimation is not made at the research stage. A heat sink in which a diamond film is formed on a metal substrate is used for a product requiring cost reduction.
【０００７】ヒートシンクの一部に金属を用いると、ダ
イヤモンドのみでヒートシンクを構成した場合に比べて
熱伝導率は落ちるが価格が低下する。そのため、ヒート
シンクの価格と性能は、ほぼ比例し、一般に、熱伝導率
が高いヒートシンクほど高価となる。そのため、それほ
ど高価でなく熱伝導率が高いヒートシンクが切望されて
いる。When a metal is used for a part of the heat sink, the heat conductivity is reduced, but the price is reduced, as compared with the case where the heat sink is constituted only by diamond. Therefore, the price and performance of the heat sink are almost proportional, and generally, the heat sink having higher thermal conductivity becomes more expensive. Therefore, a heat sink which is not so expensive and has a high thermal conductivity is desired.
【０００８】このような要求に応じるために、熱伝導率
の良い金属上にダイヤモンド薄膜を積み重ねた積層構造
のヒートシンクが、たとえば特開平５−３２６７６７号
公報に記載されている。In order to meet such requirements, a heat sink having a laminated structure in which a diamond thin film is stacked on a metal having good thermal conductivity is described in, for example, Japanese Patent Application Laid-Open No. Hei 5-326767.
【０００９】[0009]
【発明が解決しようとする課題】上述のように、従来
は、ヒートシンクとして熱伝導性に優れたＢｅＯが広く
使用されてきたが、現在要求されている放熱特性は、こ
のＢｅＯでさえも不十分なレベルにまで高くなってい
る。そこで、ＢｅＯ基材の厚みを薄くして、熱抵抗を低
減させる試みがなされている。しかし、ＢｅＯ自体が加
工性が悪い上に毒性を有しているため、事実上薄肉化は
限界に到達しているのが現状である。As described above, conventionally, BeO having excellent thermal conductivity has been widely used as a heat sink, but the heat radiation characteristic required at present is insufficient even with this BeO. To a certain level. Thus, attempts have been made to reduce the thermal resistance by reducing the thickness of the BeO base material. However, since BeO itself has poor processability and is toxic, thinning has practically reached the limit at present.
【００１０】上述の公報に記載されたヒートシンクにお
いて、基板の材質として熱伝導性の良い金属である銅や
銅−タングステン合金が記載されている。これらの材料
は金属材料中でも熱伝導率は高く、また比較的安価であ
るため、ヒートシンクの材料としては適している。In the heat sink described in the above publication, copper or copper-tungsten alloy, which is a metal having good thermal conductivity, is described as a material of the substrate. Since these materials have high thermal conductivity and are relatively inexpensive even among metal materials, they are suitable as heat sink materials.
【００１１】しかしながら、New Diamond Vol.10 No.3
（34）pp.26 〜27に記載されているように、基板中の銅
は炭化物を作らず、また銅は炭素を吸収せず、さらに炭
素と固溶しないため、銅を含む基板上にダイヤモンド薄
膜を密着性良く成膜することは困難であるという問題が
あった。[0011] However, New Diamond Vol.10 No.3
(34) As described in pp. 26-27, copper in the substrate does not form carbides, and copper does not absorb carbon and does not form a solid solution with carbon. There is a problem that it is difficult to form a thin film with good adhesion.
【００１２】また、銅は熱膨張係数が大きく、ダイヤモ
ンドは熱膨張係数が小さいため、銅とダイヤモンドとの
熱膨張係数の差により、ヒートシンクの温度が高くなる
と基板からダイヤモンド薄膜が剥離するという問題があ
った。Further, since copper has a large coefficient of thermal expansion and diamond has a small coefficient of thermal expansion, the difference in the coefficient of thermal expansion between copper and diamond causes a problem that the diamond thin film is peeled off from the substrate when the temperature of the heat sink increases. there were.
【００１３】また、基板の熱膨張率とダイヤモンドの熱
膨張率との差が小さければ、ヒートシンクが高温となっ
てもダイヤモンド薄膜内部に応力が生じるだけでダイヤ
モンドヒートシンクに反りは生じない。しかし、銅や銅
を含む焼結体の熱膨張率はダイヤモンドの熱膨張率と比
べて大きいため、ヒートシンクに反りが生じるという問
題が発生する。Further, if the difference between the coefficient of thermal expansion of the substrate and the coefficient of thermal expansion of diamond is small, even if the heat sink becomes high temperature, only the stress is generated inside the diamond thin film and the diamond heat sink does not warp. However, since the coefficient of thermal expansion of copper or a sintered body containing copper is larger than the coefficient of thermal expansion of diamond, a problem occurs in that the heat sink is warped.
【００１４】そこで、この発明は、上述のような問題点
を解決するためになされたものであり、この発明の目的
は、熱伝導性の良い基板上にダイヤモンド薄膜を密着性
良く形成できるヒートシンクを提供することである。Accordingly, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a heat sink capable of forming a diamond thin film with good adhesion on a substrate having good heat conductivity. To provide.
【００１５】また、この発明の別の目的は、反りの発生
を抑制できるヒートシンクを提供することである。Another object of the present invention is to provide a heat sink capable of suppressing the occurrence of warpage.
【００１６】[0016]
【課題を解決するための手段】この発明の１つの局面に
従ったヒートシンクは、ＣｕとＷとを含む焼結体の基板
と、基板の表面上に形成されたダイヤモンド薄膜層とを
備える。基板内のＣｕの含有率は５重量％以上である。
ダイヤモンド薄膜層にＸ線を照射して得られるＸ線回折
チャートにおいて、Ｗの（１１０）面の回折ピーク強度
がＣｕの（２００）面の回折ピーク強度の１００倍以上
である。A heat sink according to one aspect of the present invention includes a substrate of a sintered body containing Cu and W, and a diamond thin film layer formed on a surface of the substrate. The content of Cu in the substrate is 5% by weight or more.
In the X-ray diffraction chart obtained by irradiating the diamond thin film layer with X-rays, the diffraction peak intensity of the (110) plane of W is 100 times or more the diffraction peak intensity of the (200) plane of Cu.
【００１７】このようなヒートシンクでは、基板の表面
でのＷの量が相対的に多くなり、基板の表面でのＣｕの
量が相対的に少なくなる。そのため、基板と、基板の表
面上に形成されるダイヤモンド薄膜層との密着性が向上
する。その結果、ダイヤモンド薄膜層上に搭載された半
導体素子から局所的に発した熱は、ダイヤモンド薄膜層
のヒートスプレッダとしての効果（熱を拡散させる効
果）により、ダイヤモンド薄膜層の面内でいち早く拡散
し、その後に基板へ伝達されていく。また、基板内のＣ
ｕの含有率が５重量％以上であるため、基板の熱伝導率
も高くなる。In such a heat sink, the amount of W on the surface of the substrate is relatively large, and the amount of Cu on the surface of the substrate is relatively small. Therefore, the adhesion between the substrate and the diamond thin film layer formed on the surface of the substrate is improved. As a result, the heat locally generated from the semiconductor element mounted on the diamond thin film layer is quickly diffused in the plane of the diamond thin film layer due to the effect of the diamond thin film layer as a heat spreader (effect of diffusing heat), After that, it is transmitted to the substrate. Also, C in the substrate
Since the content of u is 5% by weight or more, the thermal conductivity of the substrate also increases.
【００１８】この発明の別の局面に従ったヒートシンク
は、ＣｕとＷとを含む焼結体の基板と、基板の表面上に
形成されたダイヤモンド薄膜層とを備える。基板内のＣ
ｕの含有率は５重量％以上である。ダイヤモンド薄膜層
にＸ線を照射して得られるＸ線回折チャートにおいて、
Ｗの（２１１）面の回折ピーク強度がＣｕの（２００）
面の回折ピーク強度の３０倍以上である。A heat sink according to another aspect of the present invention includes a substrate of a sintered body containing Cu and W, and a diamond thin film layer formed on a surface of the substrate. C in the substrate
The content of u is 5% by weight or more. In the X-ray diffraction chart obtained by irradiating the diamond thin film layer with X-rays,
The diffraction peak intensity of the (211) plane of W is (200) of Cu.
More than 30 times the diffraction peak intensity of the plane.
【００１９】このようなヒートシンクでは、基板の表面
でのＷの量が相対的に多くなり、基板の表面でのＣｕの
量が相対的に少なくなる。そのため、基板と、基板の表
面上に形成されるダイヤモンド薄膜層との密着性が向上
する。その結果、ダイヤモンド薄膜層上に搭載された半
導体素子から局所的に発した熱は、ダイヤモンド薄膜層
のヒートスプレッダとしての効果（熱を拡散させる効
果）により、ダイヤモンド薄膜層の面内でいち早く拡散
し、その後基板へ伝達されていく。また、基板内のＣｕ
の含有率が５重量％以上であるため、基板の熱伝導率も
高くなる。In such a heat sink, the amount of W on the surface of the substrate is relatively large, and the amount of Cu on the surface of the substrate is relatively small. Therefore, the adhesion between the substrate and the diamond thin film layer formed on the surface of the substrate is improved. As a result, the heat locally generated from the semiconductor element mounted on the diamond thin film layer is quickly diffused in the plane of the diamond thin film layer due to the effect (heat diffusion effect) of the diamond thin film layer as a heat spreader. After that, it is transmitted to the substrate. In addition, Cu in the substrate
Is 5% by weight or more, the thermal conductivity of the substrate is also increased.
【００２０】また、ダイヤモンド薄膜層にＸ線を照射し
て得られるＸ線回折チャートにおいて、ＷＣ（タングス
テンカーバイト）のピークが現われることが好ましい。
この場合、ダイヤモンド薄膜層と基板との密着性が向上
する。It is preferable that a peak of WC (tungsten carbide) appears in an X-ray diffraction chart obtained by irradiating the diamond thin film layer with X-rays.
In this case, the adhesion between the diamond thin film layer and the substrate is improved.
【００２１】この発明のさらに別の局面に従ったヒート
シンクは、Ｃｕと低熱膨張係数の金属とを含む基板と、
基板の表面上に形成されたダイヤモンド薄膜層とを備え
る。基板内のＣｕの含有率は５重量％以上である。基板
内でのＣｕの含有率は基板の表面に近づくにつれて小さ
くなる。A heat sink according to yet another aspect of the present invention includes: a substrate including Cu and a metal having a low coefficient of thermal expansion;
A diamond thin film layer formed on the surface of the substrate. The content of Cu in the substrate is 5% by weight or more. The Cu content in the substrate decreases as it approaches the surface of the substrate.
【００２２】このように構成されたヒートシンクにおい
ては、基板の表面でＣｕの含有率が最も低くなる。その
ため、基板の表面に炭素と結合しにくいＣｕが少なくな
るため、基板と基板上のダイヤモンド薄膜層との密着性
が向上する。その結果、半導体素子から局所的に発した
熱は、ダイヤモンド薄膜層のヒートシンクスプレッダと
しての効果（熱を拡散させる効果）により、ダイヤモン
ド薄膜層の面内でいち早く拡散し、その後基板へ伝達さ
れていく。また、基板内のＣｕの含有率が５重量％以上
であるため、基板の熱伝導率も高くなる。In the heat sink configured as described above, the Cu content is the lowest on the surface of the substrate. Therefore, the amount of Cu that is not easily bonded to carbon on the surface of the substrate is reduced, and the adhesion between the substrate and the diamond thin film layer on the substrate is improved. As a result, the heat locally generated from the semiconductor element is quickly diffused in the plane of the diamond thin film layer due to the effect of the heat sink spreader (heat diffusion effect) of the diamond thin film layer, and then transferred to the substrate. . Further, since the content of Cu in the substrate is 5% by weight or more, the thermal conductivity of the substrate also increases.
【００２３】また、基板の表面からの深さが１０μｍ以
下の部分のＣｕの含有率は、基板全体のＣｕの含有率の
５０％以下であることが好ましい。このように基板の表
面での銅の含有率を調整することにより、ダイヤモンド
薄膜層と基板との密着性が向上する。基板の表面からの
深さが１０μｍ以下の部分の銅の含有率が基板全体の銅
の含有率の５０％を超えるとＣｕの存在比率が高くなり
ダイヤモンド薄膜層が基板から剥離しやすくなる。ま
た、基板の表面での銅の含有率を基板全体の銅の含有率
の５０％以下に設定することにより、基板の内部にも適
度に銅が残るため基板の反りを抑制することができる。It is preferable that the Cu content of the portion having a depth of 10 μm or less from the surface of the substrate is 50% or less of the Cu content of the whole substrate. By adjusting the content of copper on the surface of the substrate in this manner, the adhesion between the diamond thin film layer and the substrate is improved. If the copper content of the portion having a depth of 10 μm or less from the surface of the substrate exceeds 50% of the copper content of the entire substrate, the content ratio of Cu increases and the diamond thin film layer is easily peeled from the substrate. Further, by setting the content of copper on the surface of the substrate to be equal to or less than 50% of the content of copper in the entire substrate, a suitable amount of copper remains inside the substrate, so that the warpage of the substrate can be suppressed.
【００２４】また、基板は、Ｃｕ−Ｗ焼結体またはＣｕ
−Ｗ−Ｍｏ焼結体であることが好ましい。なお、Ｃｕ−
Ｗ焼結体またはＣｕ−Ｗ−Ｍｏ焼結体は、本発明の効果
を発揮するために１００Ｗ／ｍ・Ｋ以上の熱伝導率を有
することが必要である。The substrate is made of a Cu—W sintered body or Cu
-W-Mo sintered body is preferable. In addition, Cu-
The W sintered body or Cu—W—Mo sintered body needs to have a thermal conductivity of 100 W / m · K or more in order to exhibit the effects of the present invention.
【００２５】また、基板の表面にはＷ粒子が露出してお
り、そのＷ粒子の表面粗さＲZ は０．０５μｍ以上であ
ることが好ましい。この場合、ダイヤモンドの核はＷ粒
子の凸部から発生しやすいため、Ｗ粒子の表面粗さＲZ
を上述のように設定することにより、ダイヤモンドの核
発生密度が向上する。したがって基板とダイヤモンド薄
膜層との接点数が増加する。そのため、ダイヤモンド薄
膜層と基板との密着性をさらに向上させることができ
る。Further, W particles are exposed on the surface of the substrate, and the surface roughness R Z of the W particles is preferably at least 0.05 μm. In this case, since the nucleus of the diamond is easily generated from the convex portion of the W particle, the surface roughness R Z of the W particle is large.
Is set as described above, the nucleation density of diamond is improved. Therefore, the number of contacts between the substrate and the diamond thin film layer increases. Therefore, the adhesion between the diamond thin film layer and the substrate can be further improved.
【００２６】Ｗ粒子の表面の粗さＲZ が０．０５μｍ未
満であればＷ粒子に凸部が少なくなり核発生密度が低く
なる。そのため、ダイヤモンド薄膜層と基板との密着性
が低下しダイヤモンド薄膜層が基板から剥離しやすくな
る。If the surface roughness R Z of the W particles is less than 0.05 μm, the number of projections on the W particles is reduced and the nucleation density is lowered. Therefore, the adhesion between the diamond thin film layer and the substrate is reduced, and the diamond thin film layer is easily separated from the substrate.
【００２７】また、基板の表面とダイヤモンド薄膜層と
の間にはＣｕの含有率がほぼ０重量％の中間層が形成さ
れていることが好ましい。この場合、基板とダイヤモン
ド薄膜層との間にＣｕを含まない中間層を入れることに
より、ダイヤモンド薄膜層が直接基板中のＣｕと接触し
ない。そのためダイヤモンド薄膜層と基板との密着性が
さらに向上する。It is preferable that an intermediate layer having a Cu content of approximately 0% by weight is formed between the surface of the substrate and the diamond thin film layer. In this case, by inserting an intermediate layer containing no Cu between the substrate and the diamond thin film layer, the diamond thin film layer does not directly contact Cu in the substrate. Therefore, the adhesion between the diamond thin film layer and the substrate is further improved.
【００２８】また、基板の厚さは２００μｍ以上１００
００μｍ以下であることが好ましい。基板としての強度
を確保するために基板の厚さは２００μｍ以上であるこ
とが好ましい。ヒートシンクの熱抵抗が大きくなりすぎ
ないために基板の厚さは１００００μｍ以下であること
が好ましい。The thickness of the substrate is 200 μm or more and 100 μm or more.
It is preferably not more than 00 μm. In order to secure the strength as a substrate, the thickness of the substrate is preferably 200 μm or more. The thickness of the substrate is preferably 10000 μm or less so that the heat resistance of the heat sink does not become too large.
【００２９】また、ダイヤモンド薄膜層の厚さは１０μ
ｍ以上であることが好ましい。この場合、ダイヤモンド
薄膜層は、半導体素子で発生した熱をまず面内で拡散さ
せて一部分に熱をこもらせない働きをする。この働きを
妨げないためにダイヤモンド薄膜層の厚さは１０μｍ以
上とする必要がある。The thickness of the diamond thin film layer is 10 μm.
m or more. In this case, the diamond thin film layer has a function of diffusing heat generated in the semiconductor element in the plane first so as not to partially store the heat. In order not to hinder this function, the thickness of the diamond thin film layer needs to be 10 μm or more.
【００３０】なお、ダイヤモンド薄膜層の熱伝導率は、
通常、ダイヤモンドの品質により５００Ｗ／ｍ・Ｋ〜２
０００Ｗ／ｍ・Ｋの範囲でばらつきがあるが、本発明の
効果を発揮するためには、ダイヤモンド薄膜層の熱伝導
率を７００Ｗ／ｍ・Ｋ以上とする必要がある。The thermal conductivity of the diamond thin film layer is as follows:
Usually, 500W / m · K ~ 2 depending on the quality of diamond
Although there is a variation in the range of 000 W / m · K, the thermal conductivity of the diamond thin film layer needs to be 700 W / m · K or more in order to exert the effect of the present invention.
【００３１】この発明に従ったヒートシンクの製造方法
は、Ｃｕと低熱膨張係数の金属とを含む基板の表面を酸
に浸すことにより基板の表面層の部分のＣｕの含有率を
減少させるとともに、露出した低熱膨張係数の金属の表
面を粗面化する工程と、酸処理後の基板の表面上に気相
合成法によりダイヤモンド薄膜層を形成する工程とを備
える。The method of manufacturing a heat sink according to the present invention reduces the Cu content in the surface layer portion of the substrate by immersing the surface of the substrate containing Cu and a metal having a low coefficient of thermal expansion in an acid, And a step of forming a diamond thin film layer on the surface of the acid-treated substrate by a vapor phase synthesis method.
【００３２】このような工程を備えたヒートシンクの製
造方法においては、まず、基板表面を酸処理することに
より、基板表面でのＣｕの含有率が減少し、その表面上
にダイヤモンド薄膜層を形成するため、基板上に密着性
よくダイヤモンド薄膜層を形成することができる。In the method of manufacturing a heat sink having such a process, first, the surface of the substrate is subjected to an acid treatment to reduce the content of Cu on the surface of the substrate, thereby forming a diamond thin film layer on the surface. Therefore, the diamond thin film layer can be formed on the substrate with good adhesion.
【００３３】また、基板の表面層の部分のＣｕの含有率
を減少させる工程は、露出した低熱膨張係数の金属の表
面を粗面化することを含む。これにより、粗面化した低
熱膨張係数の金属上にダイヤモンド薄膜が形成されるた
め、ダイヤモンド薄膜層と基板との密着性がさらに向上
する。Further, the step of reducing the content of Cu in the surface layer portion of the substrate includes roughening the surface of the exposed metal having a low coefficient of thermal expansion. Thereby, the diamond thin film is formed on the roughened metal having a low coefficient of thermal expansion, so that the adhesion between the diamond thin film layer and the substrate is further improved.
【００３４】また、酸は、塩酸、硝酸、硫酸、フッ化水
素酸（ＨＦ）、過酸化水素（Ｈ2 Ｏ2 ）およびクロム酸
からなる群より選ばれた溶液またはその混合溶液である
ことが好ましい。これらの酸を用いることにより、基板
表面が適度に荒れ、ダイヤモンド薄膜層を形成しやすく
なる。The acid may be a solution selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid (HF), hydrogen peroxide (H 2 O 2 ) and chromic acid, or a mixed solution thereof. preferable. By using these acids, the surface of the substrate is appropriately roughened, and a diamond thin film layer is easily formed.
【００３５】また、基板の表面層の部分のＣｕの含有率
を減少させる工程は、基板の表面を特定の酸に浸す第１
酸処理工程と、第１酸処理後の基板を特定の酸とは異な
る酸に浸す第２酸処理工程とを含むことが好ましい。Further, the step of reducing the content of Cu in the surface layer portion of the substrate includes the first step of immersing the surface of the substrate in a specific acid.
It is preferable to include an acid treatment step and a second acid treatment step of immersing the substrate after the first acid treatment in an acid different from the specific acid.
【００３６】また、気相合成法でダイヤモンド膜を形成
する際に基板の表面から深い所にダイヤモンドの核が発
生する。つまりダイヤモンド薄膜の根が基板の深い所に
存在し、錨を沈めたような効果（アンカー効果）が期待
できる。When a diamond film is formed by a vapor phase synthesis method, diamond nuclei are generated deep from the surface of the substrate. That is, the root of the diamond thin film exists deep in the substrate, and an effect (anchor effect) as if the anchor is sunk can be expected.
【００３７】また、基板は、Ｃｕ−Ｗ焼結体、Ｃｕ−Ｍ
ｏ焼結体およびＣｕ−Ｗ−Ｍｏ焼結体からなる群より選
ばれた少なくとも１種の焼結体であることが好ましい。The substrate is made of a Cu-W sintered body, Cu-M
It is preferably at least one type of sintered body selected from the group consisting of an o-sintered body and a Cu-W-Mo sintered body.
【００３８】また、酸に浸された基板の表面ではＷ粒子
が露出しており、Ｗ粒子の表面粗さＲZ は０．０５μｍ
以上であることが好ましい。このような表面粗さとする
ことによりＷ粒子の表面にダイヤモンド微粒子が入り込
み、それを核としてダイヤモンド薄膜が成長する。その
ためダイヤモンド薄膜層と基板との密着性が向上する。The W particles are exposed on the surface of the substrate immersed in the acid, and the surface roughness R Z of the W particles is 0.05 μm.
It is preferable that it is above. With such a surface roughness, fine diamond particles enter the surface of the W particles, and a diamond thin film grows using the fine particles as nuclei. Therefore, the adhesion between the diamond thin film layer and the substrate is improved.
【００３９】Ｃｕの含有率を減少させる酸処理は、基板
の表面にＸ線を照射して得られるＸ線回折チャートにお
いて、Ｃｕのピークが検出されないようになるまで行な
うことが好ましい。The acid treatment for reducing the Cu content is preferably performed until the Cu peak is no longer detected in the X-ray diffraction chart obtained by irradiating the surface of the substrate with X-rays.
【００４０】この場合、基板の表面でのＣｕの含有率が
十分減少するため、基板とその基板上に形成されるダイ
ヤモンド薄膜層との密着性が向上する。In this case, since the content of Cu on the surface of the substrate is sufficiently reduced, the adhesion between the substrate and the diamond thin film layer formed on the substrate is improved.
【００４１】Ｃｕの含有率を減少させる酸処理は、基板
の表面からの深さが３０μｍ以内の部分の空孔率が５体
積％以上７０体積％以下となり、かつ基板の表面からの
深さが３０μｍ以内の部分でのＣｕの含有率が基板全体
のＣｕの含有率の５０％以下になるまで行なうことが好
ましい。In the acid treatment for reducing the Cu content, the porosity of the portion having a depth of 30 μm or less from the substrate surface becomes 5% by volume or more and 70% by volume or less, and the depth from the substrate surface becomes It is preferable to perform the process until the Cu content in the portion within 30 μm becomes 50% or less of the Cu content in the entire substrate.
【００４２】この場合、空孔率を上述のような範囲とす
ることにより、その空孔にダイヤモンドの微粒が入り込
みやすくなり、また、核発生がしやすくなる。In this case, by setting the porosity in the above range, fine particles of diamond can easily enter the vacancies, and nuclei can be easily generated.
【００４３】空孔率が５体積％未満であれば核発生など
がしにくくなり、空孔率が７０体積％を超えると空孔率
が大きくなりすぎて熱伝導度が低下し、ヒートシンクと
しての特性が低下する。When the porosity is less than 5% by volume, nucleation and the like are difficult to occur, and when the porosity exceeds 70% by volume, the porosity becomes too large and the thermal conductivity is reduced, so that the heat sink is used. The characteristics deteriorate.
【００４４】基板の表面からの深さが３０μｍ以内の部
分での空孔率が１０体積％以上５０体積％以下であるこ
とがさらに好ましい。It is more preferable that the porosity at a portion within a depth of 30 μm from the surface of the substrate is not less than 10% by volume and not more than 50% by volume.
【００４５】また、基板の表面からの深さが３０μｍ以
内の部分でのＣｕの含有率を基板全体でのＣｕの含有率
の５０％以下としているためヒートシンクに反りが生じ
にくくなる。Further, since the content of Cu in the portion within 30 μm from the surface of the substrate is set to 50% or less of the content of Cu in the entire substrate, the heat sink hardly warps.
【００４６】また、ダイヤモンド薄膜層の形成に先立
ち、基板の表面に傷付け処理を行なう工程を備えること
が好ましい。この場合、基板表面の傷からダイヤモンド
の核が発生しやすくなるため、ダイヤモンドの核が基板
の表面に多く発生し、ダイヤモンド薄膜層の成長が速く
なるとともにダイヤモンド薄膜層の厚さも均一となる。It is preferable that the method further includes a step of performing a scratching treatment on the surface of the substrate prior to the formation of the diamond thin film layer. In this case, since diamond nuclei are easily generated from scratches on the substrate surface, many diamond nuclei are generated on the surface of the substrate, so that the diamond thin film layer grows faster and has a uniform thickness.
【００４７】また、傷付け処理は、ダイヤモンドを用い
て基板表面に傷をつけることを含むことが好ましい。こ
の場合、基板の表面に傷を付ける際にダイヤモンドが基
板の表面に付着するため、ダイヤモンドがダイヤモンド
薄膜層を形成する際の核となる。そのため、より一層ダ
イヤモンド薄膜層の成長を促進することができる。Further, it is preferable that the scratching process includes scratching the substrate surface using diamond. In this case, diamond adheres to the surface of the substrate when the surface of the substrate is scratched, so that the diamond becomes a nucleus when forming a diamond thin film layer. Therefore, the growth of the diamond thin film layer can be further promoted.
【００４８】なお、基板上へのダイヤモンドダイヤモン
ド薄膜層の形成には気相合成法が用いられるが、気相合
成法として、熱フィラメントＣＶＤ（chemical vapor d
eposition ）法、プラズマＣＶＤ法、火炎法など、これ
まで知られているいずれの方法を用いてもよい。A vapor-phase synthesis method is used for forming a diamond-diamond thin film layer on a substrate.
Any known method such as an eposition method, a plasma CVD method, or a flame method may be used.
【００４９】この発明の、また別の局面に従ったヒート
シンクは、基板と、その基板上に形成されたダイヤモン
ド薄膜層とを備える。基板は、低熱膨張係数の多孔質材
料からなる基板母材と、基板母材の空孔に充填されたＣ
ｕとを含む。基板母材の表面層では、空孔にダイヤモン
ド薄膜層が入り込んでいる。A heat sink according to still another aspect of the present invention includes a substrate and a diamond thin film layer formed on the substrate. The substrate was made of a substrate preform made of a porous material having a low coefficient of thermal expansion, and C filled in pores of the substrate preform.
u. In the surface layer of the substrate base material, the diamond thin film layer enters the pores.
【００５０】このように構成されたヒートシンクにおい
ては、基板を構成する基板母材が低熱膨張係数であるた
め、基板と、その基板上に形成されるダイヤモンド薄膜
層との熱膨張係数の差が小さくなる。また、基板母材の
表面層では、空孔にダイヤモンド薄膜層が入り込んでい
るため、基板母材とダイヤモンド薄膜層の密着性が向上
する。その結果、ヒートシンクが高温となってもダイヤ
モンド薄膜層が基板から剥離するのを防止することがで
きる。In the heat sink configured as described above, since the base material of the substrate has a low coefficient of thermal expansion, the difference in the coefficient of thermal expansion between the substrate and the diamond thin film layer formed on the substrate is small. Become. In the surface layer of the substrate base material, since the diamond thin film layer enters the pores, the adhesion between the substrate base material and the diamond thin film layer is improved. As a result, it is possible to prevent the diamond thin film layer from peeling off from the substrate even when the temperature of the heat sink becomes high.
【００５１】また、基板の熱伝導率は１００Ｗ／ｍ・Ｋ
以上であり、かつ厚さは２００μｍ以上７００μｍ以下
であり、ダイヤモンド薄膜層の厚さは１０μｍ以上２０
０μｍ以下であることが好ましい。この場合、ダイヤモ
ンド薄膜層が薄いため、ダイヤモンド薄膜層は、基板と
ほぼ同様に膨張するため、ダイヤモンド薄膜層と、その
上に設けられた半導体素子との膨張率がほぼ等しくな
る。その結果、半導体素子の割れを防止することができ
る。The thermal conductivity of the substrate is 100 W / m · K
And the thickness is 200 μm or more and 700 μm or less, and the thickness of the diamond thin film layer is 10 μm or more and 20 μm or less.
It is preferably 0 μm or less. In this case, since the diamond thin film layer is thin, the diamond thin film layer expands almost in the same manner as the substrate, so that the expansion coefficient of the diamond thin film layer is substantially equal to that of the semiconductor element provided thereon. As a result, cracking of the semiconductor element can be prevented.
【００５２】さらに、ダイヤモンド薄膜層の熱伝導率は
１０００Ｗ／ｍ・Ｋ以上であることが好ましい。Further, the thermal conductivity of the diamond thin film layer is preferably 1000 W / m · K or more.
【００５３】また、基板母材は、Ｗ焼結体、Ｍｏ焼結体
およびＷ−Ｍｏ焼結体からなる群より選ばれた少なくと
も１種の焼結体であることが好ましい。Further, it is preferable that the substrate base material is at least one kind of sintered body selected from the group consisting of a W sintered body, a Mo sintered body, and a W-Mo sintered body.
【００５４】さらに、基板母材の空孔率は１５体積％以
上６０体積％以下であることが好ましい。基板母材の空
孔率が１５体積％未満であれば、空孔に銅を充填したと
きの熱伝導率が低下する。空孔率が６０体積％を超える
と、ダイヤモンド薄膜層の厚さが不均一となる。Further, the porosity of the substrate base material is preferably from 15% by volume to 60% by volume. If the porosity of the substrate base material is less than 15% by volume, the thermal conductivity when the holes are filled with copper decreases. If the porosity exceeds 60% by volume, the thickness of the diamond thin film layer becomes uneven.
【００５５】この発明に従ったヒートシンクの製造方法
は、低熱膨張係数の多孔質材料からなる基板母材の表面
上にダイヤモンド薄膜層を形成する工程と、ダイヤモン
ド薄膜層の形成後に、基板母材の空孔にＣｕを充填する
工程とを備える。The method of manufacturing a heat sink according to the present invention includes a step of forming a diamond thin film layer on the surface of a substrate base material made of a porous material having a low coefficient of thermal expansion, and a step of forming the diamond thin film layer after the formation of the diamond thin film layer. Filling the holes with Cu.
【００５６】このような工程を備えたヒートシンクの製
造方法に従えば、ダイヤモンド薄膜層を形成する際にダ
イヤモンドの核が多孔体の表面から生じるため、ダイヤ
モンド薄膜層の核は基板母材の表面から深いところから
発生する。つまり、ダイヤモンド薄膜層の根が基板の表
面から深いところに存在し、錨を沈めたような効果（ア
ンカー効果）が期待できる。According to the method of manufacturing a heat sink having such a process, the nuclei of diamond are generated from the surface of the porous body when the diamond thin film layer is formed. It occurs from deep. That is, the root of the diamond thin film layer exists deep from the surface of the substrate, and an effect (anchor effect) as if the anchor is sunk can be expected.
【００５７】また、低熱膨張係数の多孔質材料からなる
基板を用いるため、ダイヤモンド薄膜層を成膜するとき
の熱膨張量が小さくなる。さらに、このように熱膨張量
が小さいため、成膜後に基板母材を冷却した際にダイヤ
モンド薄膜層と基板母材との熱膨張率の差により生ずる
反りも抑制できる。Since a substrate made of a porous material having a low coefficient of thermal expansion is used, the amount of thermal expansion when forming a diamond thin film layer is small. Further, since the amount of thermal expansion is small as described above, it is possible to suppress warpage caused by a difference in thermal expansion coefficient between the diamond thin film layer and the substrate base material when the substrate base material is cooled after film formation.
【００５８】また、基板母材の空孔に銅を充填するた
め、基板母材の空孔は隙間なく熱伝導率の良好な銅で埋
められる。その結果、基板母材の熱伝導率も向上し、ヒ
ートシンク全体の熱伝導率が向上する。In addition, since the holes in the substrate base material are filled with copper, the holes in the substrate base material are filled with copper having good thermal conductivity without gaps. As a result, the thermal conductivity of the substrate base material is also improved, and the thermal conductivity of the entire heat sink is improved.
【００５９】また、ダイヤモンド薄膜層を基板母材に形
成する際には基板母材には銅が存在しないため、基板母
材上に密着性良くダイヤモンド薄膜層を合成することが
できる。Further, when forming a diamond thin film layer on a substrate base material, copper is not present in the substrate base material, so that a diamond thin film layer can be synthesized on the substrate base material with good adhesion.
【００６０】また、ダイヤモンド薄膜層を形成する工程
は、気相合成法により基板母材の表面上にダイヤモンド
薄膜層を形成することを含むことが好ましい。ここで、
気相合成法としては、熱フィラメントＣＶＤ（chemical
vapor deposition ）法、プラズマＣＶＤ法、火炎法な
どのように、これまで知られているいずれの方法を用い
てもよい。Preferably, the step of forming the diamond thin film layer includes forming the diamond thin film layer on the surface of the substrate base material by a vapor phase synthesis method. here,
As the vapor phase synthesis method, hot filament CVD (chemical
Any known method such as a vapor deposition method, a plasma CVD method, or a flame method may be used.
【００６１】また、基板母材は、Ｗ焼結体、Ｍｏ焼結体
およびＷ−Ｍｏ焼結体からなる群より選ばれた少なくと
も１種の焼結体であることが好ましい。It is preferable that the substrate base material is at least one kind of sintered body selected from the group consisting of a W sintered body, a Mo sintered body, and a W-Mo sintered body.
【００６２】また、基板母材の空孔率は１５体積％以上
６０体積％以下であることが好ましい。空孔率をこのよ
うに設定することにより、基板母材の表面からダイヤモ
ンドの核が生じやすくなるとともに、銅を充填したとき
の熱伝導率が大きくなり、ヒートシンク全体の熱伝導率
が向上する。The porosity of the substrate base material is preferably 15% by volume or more and 60% by volume or less. By setting the porosity in this manner, the nuclei of diamond are easily generated from the surface of the substrate base material, the thermal conductivity when copper is filled is increased, and the thermal conductivity of the entire heat sink is improved.
【００６３】空孔率が１５体積％未満であれば基板母材
の深い部分からダイヤモンドの核が発生しにくくなり、
基板母材とダイヤモンド薄膜層との密着性が低下する。
また、空孔に充填される銅の量が減少するのでヒートシ
ンクの熱伝導率が低下する。If the porosity is less than 15% by volume, it becomes difficult for diamond nuclei to be generated from a deep portion of the substrate base material,
Adhesion between the substrate base material and the diamond thin film layer is reduced.
Further, since the amount of copper filled in the holes decreases, the thermal conductivity of the heat sink decreases.
【００６４】空孔率が６０体積％を超えると基板母材の
深い部分にダイヤモンドの核が発生するが、基板母材の
表面に均一な厚さのダイヤモンド薄膜層を形成しにくく
なる。また、ダイヤモンドの核の発生密度が低下してダ
イヤモンド薄膜層を構成するダイヤモンドの結晶粒は大
きくなるが、ダイヤモンド薄膜層の表面粗さが大きくな
る。これに伴い、ダイヤモンド薄膜層の厚みが揃わずか
つダイヤモンド薄膜層の研磨に時間がかかるという問題
も生じる。When the porosity exceeds 60% by volume, diamond nuclei are generated in a deep portion of the substrate base material, but it is difficult to form a diamond thin film layer having a uniform thickness on the surface of the substrate base material. Further, although the generation density of diamond nuclei is reduced and the crystal grains of the diamond constituting the diamond thin film layer are increased, the surface roughness of the diamond thin film layer is increased. Along with this, there is also a problem that polishing of the diamond thin film layer takes a long time because the thickness of the diamond thin film layer is slightly uniform.
【００６５】また、基板母材の空孔に銅を充填する工程
は、溶融した銅を基板母材の空孔内に浸入させることを
含むことが好ましい。Preferably, the step of filling the holes of the substrate base material with copper includes injecting molten copper into the holes of the substrate base material.
【００６６】また、基板母材の空孔に銅を充填する工程
は、固体の銅の上に基板母材を載置した後、銅を加熱し
て溶融させて溶融した銅を空孔に浸入させることを含む
ことが好ましい。In the step of filling the holes of the substrate base material with copper, the substrate base material is placed on solid copper, and then the copper is heated and melted to inject the molten copper into the holes. It is preferable to include the following.
【００６７】この場合、たとえばヒータなどの加熱器の
上に固体の銅を置き、その銅の上にダイヤモンド薄膜層
を成膜した基板母材を、ダイヤモンド薄膜層が上になる
ように配置して銅を溶融させると、銅は毛管現象により
基板母材内に溶け込んでいく。この方法では銅と基板母
材との配置が簡単であり、また、銅が溶けた際に銅が周
辺に飛ぶことを抑制できるため、ダイヤモンド薄膜層の
面に汚れが付着するのを防止することができる。In this case, for example, solid copper is placed on a heater such as a heater, and a substrate base material having a diamond thin film layer formed on the copper is arranged so that the diamond thin film layer is on top. When the copper is melted, the copper melts into the substrate base material by a capillary phenomenon. In this method, the arrangement of the copper and the substrate base material is simple, and since the copper can be prevented from flying to the periphery when the copper is melted, it is necessary to prevent the surface of the diamond thin film layer from being stained. Can be.
【００６８】また、基板母材の空孔に銅を充填する工程
は、ダイヤモンド薄膜層が形成された基板母材上に固体
の銅を載置した後、銅を加熱して溶融させて溶融した銅
を空孔に浸入させることを含むことが好ましい。In the step of filling the holes in the substrate base material with copper, the solid copper is placed on the substrate base material on which the diamond thin film layer is formed, and then the copper is heated and melted. Preferably, the method includes injecting copper into the holes.
【００６９】この場合、基板母材上に固体の銅を置き、
この銅を溶かすので銅は重力と毛管現象によって基板母
材内に溶け込んでいく。その結果、銅を充填する速度が
速くなる。In this case, solid copper is placed on the substrate base material,
Since this copper is melted, the copper melts into the substrate base material by gravity and capillary action. As a result, the speed of filling the copper increases.
【００７０】また、基板母材の空孔に銅を充填する工程
は、容器内に銅の溶湯を蓄え、ダイヤモンド薄膜層が形
成された基板母材を銅の溶湯に浸すことにより、溶融し
た銅を空孔に浸入させることを含むことが好ましい。In the step of filling the holes of the substrate base material with copper, the molten copper is stored in a container, and the substrate base material on which the diamond thin film layer is formed is immersed in the molten copper to obtain molten copper. Preferably penetrates the pores.
【００７１】この場合、銅の溶湯に基板母材を漬けるた
め、基板母材の面のうちダイヤモンド薄膜層が形成され
た面以外のすべての面から銅が均等に浸入し、かつ浸入
する速度も速くなる。In this case, since the substrate preform is immersed in the molten copper, the copper uniformly penetrates from all the surfaces of the substrate preform other than the surface on which the diamond thin film layer is formed, and the speed at which the copper penetrates also increases. Be faster.
【００７２】また、ダイヤモンド薄膜層の形成に先立
ち、基板母材の表面に傷つけ処理を行なう工程をさらに
備えることが好ましい。この場合、傷からダイヤモンド
の核が発生しやすくなるため、ダイヤモンドの核が基板
母材の表面に多く発生し、ダイヤモンド薄膜層の成長が
速くなるとともにダイヤモンド薄膜層の厚さも均一とな
る。It is preferable that the method further includes a step of performing a damaging treatment on the surface of the substrate base material before forming the diamond thin film layer. In this case, since diamond nuclei are easily generated from the scratches, many diamond nuclei are generated on the surface of the base material of the substrate, so that the growth of the diamond thin film layer becomes faster and the thickness of the diamond thin film layer becomes uniform.
【００７３】また、傷つけ処理はダイヤモンドを用いて
基板母材の表面に傷をつけることを含むことが好まし
い。この場合、基板母材の表面に傷をつける際にダイヤ
モンドが基板母材の表面に付着するため、このダイヤモ
ンドがダイヤモンド薄膜層を形成する際の核となる。そ
のため、より一層ダイヤモンド薄膜層の成長を促進する
ことができる。It is preferable that the damage treatment includes damage to the surface of the substrate base material using diamond. In this case, since the diamond adheres to the surface of the substrate base material when the surface of the substrate base material is damaged, the diamond becomes a nucleus when forming the diamond thin film layer. Therefore, the growth of the diamond thin film layer can be further promoted.
【００７４】[0074]
【実施例】（実施例１）図１は、この発明で使用したダ
イヤモンド気相合成用の熱フィラメントＣＶＤ（chemic
al vapor deposition ）装置の模式図である。図１を参
照して、熱フィラメントＣＶＤ装置１は、反応容器２１
と、ガス導入口２２と、ガス排出口２３と、交流電源２
４と、タングステンフィラメント２５と、基板保持台２
７と、冷却水導入口２８と、冷却水排出口２９とを備え
る。(Embodiment 1) FIG. 1 shows a hot filament CVD (chemic) for vapor phase synthesis of diamond used in the present invention.
FIG. 1 is a schematic diagram of an apparatus (al vapor deposition). Referring to FIG. 1, a hot filament CVD apparatus 1 includes a reaction vessel 21.
, Gas inlet 22, gas outlet 23, and AC power supply 2
4, tungsten filament 25, and substrate holder 2
7, a cooling water inlet 28, and a cooling water outlet 29.
【００７５】反応容器２１には、原料ガスを導入するた
めのガス導入口２２と、原料ガスや原料ガスから生成し
たガスを排出するためのガス排出口２３が設けられてい
る。The reaction vessel 21 is provided with a gas inlet 22 for introducing a source gas and a gas outlet 23 for discharging the source gas or a gas generated from the source gas.
【００７６】反応容器２１内には、タングステンフィラ
メント２５が設けられている。タングステンフィラメン
ト２５は交流電源２４と接続されており、交流電源２４
からタングステンフィラメント２５へ電流が流されるこ
とによってタングステンフィラメント２５が赤熱する。In the reaction vessel 21, a tungsten filament 25 is provided. The tungsten filament 25 is connected to an AC power supply 24,
The tungsten filament 25 glows red when an electric current is passed from the tungsten filament 25 to the tungsten filament 25.
【００７７】タングステンフィラメント２５の下方には
基板を載置するためのモリブデン製の基板保持台２７が
設けられている。タングステンフィラメント２５は赤熱
することによって高温となるため、この基板保持台２７
も高温となる。基板保持台２７を冷却するための冷却水
を導入する冷却水導入口２８と冷却水を排出する冷却水
排出口２９とが基板保持台２７に設けられている。Below the tungsten filament 25, a molybdenum substrate holding table 27 for mounting a substrate is provided. Since the tungsten filament 25 becomes hot due to the red heat, the substrate holding table 27
Also get hot. A cooling water inlet 28 for introducing cooling water for cooling the substrate holder 27 and a cooling water outlet 29 for discharging the cooling water are provided on the substrate holder 27.
【００７８】Ｃｕの含有率が１１重量％のＣｕ−Ｗ焼結
体からなり、縦×横×厚みが１３．５ｍｍ×１３．５ｍ
ｍ×０．６３５ｍｍの基板を準備した。この基板の表面
にＣｕＫα管球のＸ線を照射してＸ線回折チャートを得
た。その結果を図２に示す。A Cu-W sintered body having a Cu content of 11% by weight and a length × width × thickness of 13.5 mm × 13.5 m
A substrate of mx 0.635 mm was prepared. An X-ray diffraction chart was obtained by irradiating the surface of this substrate with X-rays of a CuKα bulb. The result is shown in FIG.
【００７９】図２より、Ｗ（タングステン）に起因する
ピークがＣｕ（銅）に起因するピークよりも大きくなっ
ていることがわかる。これより、基板の表面でＷの量が
多いことがわかる。また、この基板の表面からの深さと
各成分の濃度との関係を調べた。その結果を図３に示
す。FIG. 2 shows that the peak caused by W (tungsten) is larger than the peak caused by Cu (copper). This shows that the amount of W is large on the surface of the substrate. Further, the relationship between the depth from the surface of the substrate and the concentration of each component was examined. The result is shown in FIG.
【００８０】図３中、点線２０１は、基板内部のＣｕの
濃度の実測値を示し、点線２０４は、点線２０１で示す
Ｃｕの濃度の実測値を深さ２０μｍごとに平均した値で
ある。また、実線２０２は、基板内部のＷの濃度の実測
値を示し、実線２０５は、実線２０２で示すＷの実測値
を深さ２０μｍごとに平均した値である。また、一点鎖
線２０３は基板の内部と基板の外部でのＣの濃度を示す
が、基板外部でのＣの濃度は基板を固定するための固定
治具中のＣの濃度である。In FIG. 3, a dotted line 201 indicates the measured value of the Cu concentration inside the substrate, and a dotted line 204 is a value obtained by averaging the measured values of the Cu concentration indicated by the dotted line 201 for every 20 μm depth. The solid line 202 indicates the measured value of the concentration of W in the substrate, and the solid line 205 is the average of the measured values of W indicated by the solid line 202 for each depth of 20 μm. The dashed line 203 indicates the concentration of C inside the substrate and outside the substrate. The concentration of C outside the substrate is the concentration of C in a fixing jig for fixing the substrate.
【００８１】図３の横軸は界面からの深さを示し、図３
の縦軸は任意の量を示すものであり、Ｃｕの濃度とＷの
濃度との比を正確に表わすものではない。この点は、後
述の図４および６でも同様である。The horizontal axis of FIG. 3 indicates the depth from the interface.
The vertical axis indicates an arbitrary amount, and does not accurately represent the ratio between the concentration of Cu and the concentration of W. This is the same in FIGS. 4 and 6 described later.
【００８２】図３より、基板内部では、Ｗの濃度もＣｕ
の濃度もほぼ一定であることがわかる。FIG. 3 shows that the concentration of W is
It can be seen that the concentration of is also substantially constant.
【００８３】次に、図１５のステップＡに従い、フッ硝
酸（フッ化水素酸と硝酸を体積比１：１で混ぜたもの）
を純水で希釈した溶液に上述の基板を５分間浸した。こ
の基板の内部でのＣｕとＷとの濃度を測定した。その結
果を図４に示す。Next, according to step A in FIG. 15, hydrofluoric acid (hydrofluoric acid and nitric acid mixed at a volume ratio of 1: 1)
The above-mentioned substrate was immersed in a solution diluted with pure water for 5 minutes. The concentrations of Cu and W inside the substrate were measured. FIG. 4 shows the results.
【００８４】図４中、点線２１１は、基板内部のＣｕの
濃度の実測値を示し、点線２１４は点線２１１で示すＣ
ｕの実測値を深さ２０μｍごとに平均した値を示す。実
線２１２は基板内部のＷの濃度の実測値を示し、実線２
１５は、実線２１２で示す基板内部のＷの濃度の実測値
を深さ２０μｍごとに平均した値を示す。また、一点鎖
線２１３は基板の内部と基板の外部でのＣの濃度を示す
が、基板外部でのＣの濃度は基板を指示する固定治具中
のＣの濃度である。図４より、この基板の表面の銅がフ
ッ硝酸により除去されて基板の表面に近づくにつれてＣ
ｕの濃度（含有率）が小さくなっていることがわかる。In FIG. 4, a dotted line 211 indicates an actually measured value of the concentration of Cu in the substrate, and a dotted line 214 indicates a C concentration indicated by the dotted line 211.
The values obtained by averaging the measured values of u at every 20 μm depth are shown. A solid line 212 indicates the measured value of the concentration of W inside the substrate, and a solid line 2
Reference numeral 15 denotes a value obtained by averaging the measured values of the concentration of W in the substrate indicated by the solid line 212 at every 20 μm depth. The dashed line 213 indicates the concentration of C inside the substrate and outside the substrate. The concentration of C outside the substrate is the concentration of C in the fixing jig that points to the substrate. As shown in FIG. 4, as the copper on the surface of the substrate is removed by hydrofluoric acid and approaches the surface of the substrate, C
It can be seen that the concentration (content) of u is small.
【００８５】この基板の表面にダイヤモンド砥粒で傷つ
け処理を施した後、図１で示す熱フィラメントＣＶＤ装
置１中の基板保持台２７上に基板２６を載置した。タン
グステンフィラメント２５に交流電源２４から電流を流
し、タングステンフィラメント２５の温度を約２０５０
℃とした。After the surface of the substrate was damaged by diamond abrasive grains, the substrate 26 was placed on the substrate holder 27 in the hot filament CVD apparatus 1 shown in FIG. An electric current is passed from the AC power supply 24 to the tungsten filament 25 to reduce the temperature of the tungsten filament 25 to about 2050.
° C.
【００８６】次に、ガス導入口２２からメタンの濃度が
１モル％のメタンと水素の混合ガスを反応容器２１内に
導入した。反応容器２１内の圧力を７０Ｔｏｒｒに維持
した。これにより、図１５のステップＢに従い、基板２
６上にダイヤモンド薄膜層を４０時間かけて合成した。
これにより、図１６で示すダイヤモンド薄膜層３１を得
た。得られたダイヤモンド薄膜層３１の厚さは２４μｍ
であり、基板２６の反りは３μｍであった。Next, a mixed gas of methane and hydrogen having a methane concentration of 1 mol% was introduced into the reaction vessel 21 from the gas inlet 22. The pressure in the reaction vessel 21 was maintained at 70 Torr. As a result, according to step B in FIG.
6, a diamond thin film layer was synthesized for 40 hours.
Thus, a diamond thin film layer 31 shown in FIG. 16 was obtained. The thickness of the obtained diamond thin film layer 31 is 24 μm.
And the warpage of the substrate 26 was 3 μm.
【００８７】ダイヤモンド薄膜層３１の表面を研磨して
鏡面にした後ダイヤモンド薄膜層３１の表面にＣｕＫα
管球から発生するＸ線を照射してＸ線回折チャートを得
た。得られたＸ線回折チャートを図５に示す。After polishing the surface of the diamond thin film layer 31 to a mirror surface, CuKα
X-rays generated from the tube were irradiated to obtain an X-ray diffraction chart. FIG. 5 shows the obtained X-ray diffraction chart.
【００８８】図５より、Ｗの（１１０）面のピークの強
度（高さ）ＩW （１１０）とＣｕの（２００）面のピ−
クの強度（高さ）ＩCu（２００）との比ＩW （１１０）
／ＩCu（２００）は１１９であった。また、Ｗの（２１
１）面のピークの強度（高さ）ＩW （２１１）とＣｕの
（２００）面のピークの強度（高さ）ＩCu（２００）と
の比は５０であった。また、基板２６とダイヤモンド薄
膜層３１の界面からの深さと各成分の濃度との関係を調
べた。その結果を図６に示す。FIG. 5 shows that the intensity (height) I W (110) of the peak of the (110) plane of W and the peak (I) of the (200) plane of Cu are obtained.
Strength (height) ratio I W (110) to I Cu (200)
/ I Cu (200) was 119. In addition, (21) of W
1) The ratio of the peak intensity (height) I W (211) of the plane to the peak intensity (height) I Cu (200) of the (200) plane of Cu was 50. Further, the relationship between the depth from the interface between the substrate 26 and the diamond thin film layer 31 and the concentration of each component was examined. FIG. 6 shows the result.
【００８９】図６中、点線２２１は、基板内部のＣｕの
濃度の実測値を示し、点線２２４は、点線２２１で示す
Ｃｕの濃度の実測値を深さ２０μｍごとに平均した値で
ある。実線２２２は、基板内部のＷの濃度の実測値を示
し、実線２２５は、実線２２２で示すＷの実測値を深さ
２０μｍごとに平均した値である。一点鎖線２２３は基
板の内部と基板の外部でのＣの濃度を示す。In FIG. 6, a dotted line 221 indicates the measured value of the Cu concentration inside the substrate, and a dotted line 224 is a value obtained by averaging the measured values of the Cu concentration indicated by the dotted line 221 at every 20 μm depth. The solid line 222 indicates the measured value of the concentration of W inside the substrate, and the solid line 225 is the average of the measured values of W indicated by the solid line 222 for every 20 μm in depth. The chain line 223 indicates the concentration of C inside the substrate and outside the substrate.
【００９０】図６より、Ｃｕの濃度（含有率）は基板の
表面に近づくにつれて小さくなっている。また、基板の
表面からの深さが１０μｍ以内の部分でのＣｕの含有率
は基板全体のＣｕの含有率（１１重量％）の５０％以下
であった。FIG. 6 shows that the concentration (content) of Cu decreases as it approaches the surface of the substrate. Further, the Cu content at a portion within 10 μm in depth from the surface of the substrate was 50% or less of the Cu content (11% by weight) of the entire substrate.
【００９１】縦×横×厚みが２ｍｍ×１ｍｍ×０．６３
５ｍｍとなるように基板２６を切断してもダイヤモンド
薄膜層３１が基板２６から剥離することはなかった。そ
の後、メタライズを施して作製したヒートシンクにレー
ザダイオードを設置したところ、レーザダイオードは安
定して発振した。このことにより、このヒートシンクは
十分実用に供することができることがわかる。[0091] Length x width x thickness 2 mm x 1 mm x 0.63
The diamond thin film layer 31 did not peel off from the substrate 26 even when the substrate 26 was cut to 5 mm. After that, when the laser diode was placed on a heat sink manufactured by performing metallization, the laser diode oscillated stably. This shows that this heat sink can be sufficiently used practically.
【００９２】（比較例１）Ｃｕの含有率が１１重量％の
Ｃｕ−Ｗ焼結体からなり、縦×横×厚みが１３．５ｍｍ
×１３．５ｍｍ×０．６３５ｍｍの基板を用意した。こ
の基板を、硝酸を純水で希釈した溶液に３０秒間浸し
た。この基板の表面にダイヤモンド砥粒で傷つけ処理を
施した後、熱フィラメントＣＶＤ装置１の基板保持台２
７上に基板２６を載置した。(Comparative Example 1) A Cu-W sintered body having a Cu content of 11% by weight and a length × width × thickness of 13.5 mm
A substrate of × 13.5 mm × 0.635 mm was prepared. This substrate was immersed in a solution of nitric acid diluted with pure water for 30 seconds. After subjecting the surface of the substrate to damage treatment with diamond abrasive grains, the substrate holder 2 of the hot filament CVD apparatus 1
The substrate 26 was placed on the substrate 7.
【００９３】タングステンフィラメント２５の温度を約
２０５０℃とし、ガス導入口からメタンの濃度が１モル
％のメタンと水素の混合ガスを反応容器２１内に流し
た。反応容器２１内の圧力を７０Ｔｏｒｒとした。この
条件で４０時間かけて基板上にダイヤモンド薄膜層を形
成した。ダイヤモンド薄膜層の厚さは２３．５μｍであ
り基板の反りは３．４μｍであった。The temperature of the tungsten filament 25 was set at about 2050 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 1 mol% was flowed into the reaction vessel 21 from the gas inlet. The pressure in the reaction vessel 21 was set to 70 Torr. Under these conditions, a diamond thin film layer was formed on the substrate for 40 hours. The thickness of the diamond thin film layer was 23.5 μm, and the warpage of the substrate was 3.4 μm.
【００９４】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後にＣｕＫα管球から発生するＸ線をダイヤモン
ド薄膜層に照射してＸ線回折チャートを得た。このＸ線
回折チャートからＷの（１１０）面のピークの強度（高
さ）とＣｕの（２００）面のピークの強度との比を求め
たところ、ピークの強度の比は６５であった。この基板
を縦×横×厚みが２ｍｍ×１ｍｍ×０．６３５ｍｍとな
るよう切出したところ、ダイヤモンド薄膜層が基板から
剥離した。After the surface of the diamond thin film layer was polished to a mirror surface, X-rays generated from a CuKα tube were irradiated on the diamond thin film layer to obtain an X-ray diffraction chart. When the ratio of the peak intensity (height) of the (110) plane of W to the peak intensity of the (200) plane of Cu was determined from this X-ray diffraction chart, the peak intensity ratio was 65. When this substrate was cut out so as to have a length × width × thickness of 2 mm × 1 mm × 0.635 mm, the diamond thin film layer was separated from the substrate.
【００９５】（実施例２）Ｃｕの含有率が１５重量％の
Ｃｕ−Ｗ焼結体からなり、縦×横×厚みが１３．５ｍｍ
×１３．５ｍｍ×０．６３５ｍｍの図１７で示すような
基板２６を用意した。この基板の表面の粗さＲZ が１μ
ｍとなるように基板２６の表面に粗面化処理を施した。
ここで、ＲZ はＪＩＳ（Japanese Industrial Standard
s ）で規定される十点平均粗さをいう。(Example 2) A Cu-W sintered body having a Cu content of 15% by weight and a length x width x thickness of 13.5 mm
A substrate 26 of 13.5 mm × 0.635 mm as shown in FIG. 17 was prepared. The surface roughness R Z of this substrate is 1 μm.
The surface of the substrate 26 was subjected to a surface roughening treatment so as to obtain m.
Here, R Z is JIS (Japanese Industrial Standard)
s) The ten-point average roughness specified in s).
【００９６】粗面化処理を施した表面にＣｕを含まない
中間層として厚さ３μｍの図１７で示すようなＳｉＣ３
２を蒸着した。この中間層にダイヤモンド砥粒で傷つけ
処理を施した後に図１で示す熱フィラメントＣＶＤ装置
１の基板保持台２７上に基板２６を載置した。タングス
テンフィラメントの温度を約２１００℃とし、ガス導入
口２２からメタンの濃度が１モル％のメタンと水素の混
合ガスを反応容器２１内に流した。反応容器２１内の圧
力を７０Ｔｏｒｒとした。この条件で４０時間かけて基
板上に図１７で示すようなダイヤモンド薄膜層３１を形
成した。得られたダイヤモンド薄膜層３１の厚さは２２
μｍであり、基板２６の反りは２．５μｍであった。ダ
イヤモンド薄膜層３１の表面を研磨して鏡面にした後に
ＣｕＫα管球から発生するＸ線をダイヤモンド薄膜層３
１の表面に照射してＸ線回折チャートを得た。このＸ線
回折チャートからＷの（２１１）面によるピークの強度
（高さ）ＩW （２１１）とＣｕの（２００）面のピーク
の強度（高さ）ＩCu（２００）との比ＩW （２１１）／
ＩCu（２００）は４７であった。As a Cu-free intermediate layer, a 3 μm-thick SiC 3 layer as shown in FIG.
2 was deposited. After the intermediate layer was subjected to a scratching treatment with diamond abrasive grains, the substrate 26 was placed on the substrate holding table 27 of the hot filament CVD apparatus 1 shown in FIG. The temperature of the tungsten filament was set to about 2100 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 1 mol% was flowed into the reaction vessel 21 from the gas inlet 22. The pressure in the reaction vessel 21 was set to 70 Torr. Under these conditions, a diamond thin film layer 31 as shown in FIG. 17 was formed on the substrate for 40 hours. The thickness of the obtained diamond thin film layer 31 is 22
μm, and the warpage of the substrate 26 was 2.5 μm. After polishing the surface of the diamond thin film layer 31 to a mirror surface, X-rays generated from the CuKα
The surface of No. 1 was irradiated to obtain an X-ray diffraction chart. From the X-ray diffraction chart, the ratio I W of the peak intensity (height) I W (211) of the (211) plane of W to the peak intensity (height) I Cu (200) of the (200) plane of Cu is obtained. (211) /
I Cu (200) was 47.
【００９７】その後、縦×横×厚みが２ｍｍ×１ｍｍ×
０．６３５ｍｍとなるように基板を切断してもダイヤモ
ンド薄膜層３１は基板２６から剥離することがなかっ
た。その後、基板２６の面のうちダイヤモンド薄膜層３
１が形成された面と反対側の面を磨き、この面にメタラ
イズを施してヒートシンクを作製した。ヒートシンク上
にレーザダイオードを設置したところ、レーザダイオー
ドは発振した。このことより、このヒートシンクは十分
実用に供することができることがわかる。Thereafter, the height × width × thickness is 2 mm × 1 mm ×
The diamond thin film layer 31 was not peeled from the substrate 26 even when the substrate was cut to have a diameter of 0.635 mm. Then, of the surface of the substrate 26, the diamond thin film layer 3
The surface opposite to the surface on which 1 was formed was polished, and this surface was metallized to produce a heat sink. When the laser diode was placed on the heat sink, the laser diode oscillated. This shows that this heat sink can be sufficiently used practically.
【００９８】（比較例２）Ｃｕの含有率が１５重量％の
Ｃｕ−Ｗ焼結体からなり、縦×横×厚みが１３．５ｍｍ
×１３．５ｍｍ×０．６３５ｍｍの基板を用意した。こ
の基板の表面の粗さＲZ が５μｍとなるように基板の表
面に粗面化処理を施した。粗面化処理後の表面にＣｕを
含まない中間層として厚さが１２μｍのＳｉＣを蒸着し
た。(Comparative Example 2) A Cu—W sintered body having a Cu content of 15% by weight and a length × width × thickness of 13.5 mm
A substrate of × 13.5 mm × 0.635 mm was prepared. Roughness R Z of the surface of the substrate is subjected to a roughening treatment on the surface of the substrate such that 5 [mu] m. 12 μm thick SiC was deposited as an intermediate layer containing no Cu on the surface after the surface roughening treatment.
【００９９】この中間層の表面にダイヤモンド砥粒で傷
つけ処理を施した後、図１で示す熱フィラメントＣＶＤ
装置１の基板保持台２７上に基板２６を載置した。タン
グステンフィラメントの温度を約２１００℃とし、ガス
導入口２２からメタンの濃度が１モル％のメタンと水素
の混合ガスを反応容器２１内に流した。反応容器２１内
の圧力を７０Ｔｏｒｒとした。この条件で４０時間かけ
て基板上にダイヤモンド薄膜層を形成した。ダイヤモン
ド薄膜層の厚さは２３μｍであり、基板の反りは３．５
μｍであった。After the surface of the intermediate layer is damaged by diamond abrasive grains, hot filament CVD shown in FIG.
The substrate 26 was placed on the substrate holding table 27 of the apparatus 1. The temperature of the tungsten filament was set to about 2100 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 1 mol% was flowed into the reaction vessel 21 from the gas inlet 22. The pressure in the reaction vessel 21 was set to 70 Torr. Under these conditions, a diamond thin film layer was formed on the substrate for 40 hours. The thickness of the diamond thin film layer is 23 μm, and the warpage of the substrate is 3.5.
μm.
【０１００】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後にＣｕＫα管球から発生するＸ線をダイヤモン
ド薄膜層に照射してＸ線回折チャートを得た。このＸ線
回折チャートより、Ｗの（２１１）面によるピークの強
度（高さ）ＩW （２１１）とＣｕの（２００）面のピー
クの強度（高さ）ＩCu（２００）との比ＩW （２１１）
／ＩCu（２００）は１８であった。この基板を縦×横×
厚みが２ｍｍ×１ｍｍ×０．６３５ｍｍとなるように切
断したところダイヤモンド薄膜層は基板から剥離した。After the surface of the diamond thin film layer was polished to a mirror surface, X-rays generated from a CuKα tube were irradiated on the diamond thin film layer to obtain an X-ray diffraction chart. From this X-ray diffraction chart, the ratio I of the peak intensity (height) I W (211) of the (211) plane of W to the peak intensity (height) I Cu (200) of the (200) plane of Cu is obtained. W (211)
/ I Cu (200) was 18. This board is vertical x horizontal x
When the diamond thin film layer was cut so as to have a thickness of 2 mm × 1 mm × 0.635 mm, the diamond thin film layer was separated from the substrate.
【０１０１】（実施例３）図７は、この発明で用いたダ
イヤモンド気相合成用のマイクロ波プラズマＣＶＤ装置
の模式図である。マイクロ波プラズマＣＶＤ装置１００
は、基板保持台１０１と、マイクロ波電源１０４と、チ
ューナ１０５と、導波管１０６と、反応容器１０７と、
排出口１０８と、導入口１０９と、プランジャ１１０と
を備える。(Embodiment 3) FIG. 7 is a schematic view of a microwave plasma CVD apparatus for diamond vapor phase synthesis used in the present invention. Microwave plasma CVD apparatus 100
Includes a substrate holder 101, a microwave power supply 104, a tuner 105, a waveguide 106, a reaction vessel 107,
An outlet 108, an inlet 109, and a plunger 110 are provided.
【０１０２】反応容器１０７内には、基板を保持するた
めの基板保持台１０１が設けられる。反応容器１０７に
は、原料ガスを導入するための導入口１０９と、原料ガ
スや反応して形成されたガスを排出するための排出口１
０８が設けられる。排出口１０８は真空ポンプに接続さ
れる。マイクロ波電源１０４とアイソレータ（図示せ
ず）とチューナ１０５がマイクロ波発生部を構成する。
反応容器１０７は石英管により構成される。In the reaction container 107, a substrate holding table 101 for holding a substrate is provided. The reaction vessel 107 has an inlet 109 for introducing a raw material gas, and an outlet 1 for discharging the raw material gas and a gas formed by the reaction.
08 is provided. The outlet 108 is connected to a vacuum pump. The microwave power supply 104, the isolator (not shown), and the tuner 105 constitute a microwave generator.
The reaction vessel 107 is constituted by a quartz tube.
【０１０３】マイクロ波発生部から発生したマイクロ波
は導波管１０６を介してプランジャ１１０へ向かう。そ
して、導波管１０６の途中に反応容器１０７が設けられ
ているため、反応容器１０７内に点線１０３で囲んだプ
ラズマが発生する。プラズマが発生する位置は反応容器
１０７と導波管１０６とが交差する位置であるため、こ
の交差する位置付近に基板保持台１０１が設置される。The microwave generated from the microwave generator goes to the plunger 110 via the waveguide 106. Since the reaction vessel 107 is provided in the middle of the waveguide 106, plasma surrounded by a dotted line 103 is generated in the reaction vessel 107. Since the position where the plasma is generated is the position where the reaction vessel 107 and the waveguide 106 intersect, the substrate holding table 101 is installed near the intersection.
【０１０４】Ｃｕの含有率が１１重量％の焼結体からな
り、縦×横×厚みが１３．５ｍｍ×１３．５ｍｍ×１ｍ
ｍの基板を用意した。フッ硝酸を純水で希釈した溶液に
上述の基板を２分間浸した。この基板の表面にダイヤモ
ンド砥粒で傷つけ処理を施した後マイクロ波プラズマＣ
ＶＤ装置１００の基板保持台１０１上に基板１０２を載
置した。It is made of a sintered body having a Cu content of 11% by weight, and has a length × width × thickness of 13.5 mm × 13.5 mm × 1 m
m of substrates were prepared. The above substrate was immersed in a solution of hydrofluoric nitric acid diluted with pure water for 2 minutes. After the surface of the substrate is scratched with diamond abrasive, microwave plasma C
The substrate 102 was placed on the substrate holder 101 of the VD device 100.
【０１０５】基板の温度を８５０℃とし、メタンの濃度
が３モル％のメタンと水素の混合ガスを導入口１０９か
ら導入し、反応容器１０７内の圧力を１４０Ｔｏｒｒに
保ち、反応容器１０７内にプラズマを発生させた。この
条件で２０時間かけて基板１０２上にダイヤモンド薄膜
層を合成した。ダイヤモンド薄膜層の厚さは２２μｍで
あり、基板の反りは４μｍであった。The temperature of the substrate was set to 850 ° C., a mixed gas of methane and hydrogen having a methane concentration of 3 mol% was introduced from the inlet 109, the pressure in the reaction vessel 107 was maintained at 140 Torr, and the plasma was Generated. Under these conditions, a diamond thin film layer was synthesized on the substrate 102 over 20 hours. The thickness of the diamond thin film layer was 22 μm, and the warpage of the substrate was 4 μm.
【０１０６】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後にＣｕＫα管球から発生するＸ線をダイヤモン
ド薄膜層の表面に照射してＸ線回折チャートを得た。得
られたＸ線回折チャートを図８に示す。After polishing the surface of the diamond thin film layer to a mirror surface, the surface of the diamond thin film layer was irradiated with X-rays generated from a CuKα tube to obtain an X-ray diffraction chart. FIG. 8 shows the obtained X-ray diffraction chart.
【０１０７】図８より、Ｗの（１１０）面のピークの強
度（高さ）ＩW （１１０）とＣｕの（２００）面のピー
クの強度（高さ）ＩCu（２００）との比ＩW （１１０）
／ＩCu（２００）は１４０であった。また、Ｗの（２１
１）面のピークの強度（高さ）ＩW （２１１）とＣｕの
（２００）面のピークの強度（高さ）ＩCu（２００）と
の比ＩW （２１１）／ＩCu（２００）は５０であった。As shown in FIG. 8, the ratio I of the peak intensity (height) I W (110) of the (110) plane of W to the peak intensity (height) I Cu (200) of the (200) plane of Cu is obtained. W (110)
/ I Cu (200) was 140. In addition, (21) of W
1) The ratio I W (211) / I Cu (200) of the peak intensity (height) I W (211) of the plane and the peak intensity (height) I Cu (200) of the (200) plane of Cu. Was 50.
【０１０８】基板を縦×横×厚みが２ｍｍ×１ｍｍ×１
ｍｍとなるように切断して複数個の基板を形成してもダ
イヤモンド薄膜層が基板から外れることはなかった。複
数個の基板のうちの１個のダイヤモンド薄膜層を剥がし
て基板の表面の面積が３×４μｍ2 の範囲をエリオニク
ス社製ＥＲＡ８０００型の３Ｄ−ＳＥＭ（three demens
ional scanning electron microscope）で観察した。そ
の観察結果を図９に示す。The substrate has a length × width × thickness of 2 mm × 1 mm × 1
mm, the diamond thin film layer did not come off from the substrate even if a plurality of substrates were formed by cutting. One diamond thin film layer of a plurality of substrates is peeled off, and the surface area of the substrate is reduced to 3 × 4 μm 2 by 3D-SEM (three demens) of ERA8000 type manufactured by Elionix.
ional scanning electron microscope). FIG. 9 shows the observation results.
【０１０９】また、この観察結果から基板の表面ではＷ
粒子が露出しており、Ｗ粒子の表面粗さＲZ を測定した
ところ、表面粗さＲZ は０．０９μｍであった。また、
この基板の表面の別の部分をＦＥＳＥＭ（field emissi
on scanning electron microscope ）で観察した。観察
結果を図１０に示す。Also, from this observation result, W on the surface of the substrate
When the particles were exposed and the surface roughness R Z of the W particles was measured, the surface roughness R Z was 0.09 μm. Also,
Another part of the surface of this substrate is referred to as FESEM (field emissi
on scanning electron microscope). FIG. 10 shows the observation results.
【０１１０】また、切断して形成した複数の基板のうち
の１つについて、基板の面のうち、ダイヤモンド薄膜層
を形成した面と反対側の面を研磨しメタライズを施して
ヒートシンクを作製した。このヒートシンクにレーザダ
イオードを設置したところ、レーザダイオードは安定し
て発振した。このことより、このヒートシンクは十分実
用に供することができるといえる。Further, one of the plurality of cut substrates was polished and metallized on the surface of the substrate opposite to the surface on which the diamond thin film layer was formed, to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated stably. From this, it can be said that this heat sink can be sufficiently used practically.
【０１１１】（実施例４）空孔率が２７．５体積％でＷ
焼結体からなり、縦×横×厚みが１０ｍｍ×１０ｍｍ×
０．３ｍｍの基板を用意した。この基板の空孔にＣｕを
浸入させた。これにより、基板全体でのＣｕの含有率を
１０重量％とし、基板の面のうち、ダイヤモンド薄膜層
を形成するための面からの深さが１０μｍの部分でのＣ
ｕの含有率を３重量％とした。Example 4 When the porosity was 27.5% by volume and W
Consists of a sintered body, length × width × thickness 10mm × 10mm ×
A 0.3 mm substrate was prepared. Cu was infiltrated into the holes of the substrate. As a result, the Cu content in the entire substrate is set to 10% by weight, and the C content in the portion of the substrate surface at a depth of 10 μm from the surface for forming the diamond thin film layer is determined.
The u content was 3% by weight.
【０１１２】この基板の表面にダイヤモンド砥粒を用い
て傷つけ処理を施した後、図７で示すマイクロ波プラズ
マＣＶＤ装置１００の基板保持台１０１上に基板１０２
を載置した。基板１０２の温度を８５０℃とし、導入口
１０９からメタンの濃度が３．５モル％のメタンと水素
の混合ガスを反応容器１０７導入した。反応容器１０７
内の圧力を１４０Ｔｏｒｒとして２０時間かけて基板１
０２上にダイヤモンド薄膜層を合成した。ダイヤモンド
薄膜層の厚さは２５μｍであり、基板の反りは２．７μ
ｍであった。After the surface of the substrate is damaged using diamond abrasive grains, the substrate 102 is placed on a substrate holding table 101 of a microwave plasma CVD apparatus 100 shown in FIG.
Was placed. The temperature of the substrate 102 was set to 850 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 3.5 mol% was introduced from the inlet 109 into the reaction vessel 107. Reaction vessel 107
The internal pressure of the substrate 1 was set to 140 Torr for 20 hours.
02, a diamond thin film layer was synthesized. The thickness of the diamond thin film layer is 25 μm, and the warpage of the substrate is 2.7 μm.
m.
【０１１３】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後に、基板を縦×横×厚みが２ｍｍ×１ｍｍ×
０．３ｍｍとなるように切断してもダイヤモンド薄膜層
が基板から剥離することはなかった。その後、基板にメ
タライズを施してヒートシンクを作製し、このヒートシ
ンクにレーザダイオードを設置したところ、レーザダイ
オードは安定して発振した。このことより、このヒート
シンクは十分実用に供することができることがわかる。After the surface of the diamond thin film layer was polished to a mirror surface, the substrate was made 2 mm × 1 mm × length × width × thickness.
The diamond thin film layer did not peel off from the substrate even when cut to 0.3 mm. Thereafter, the substrate was metallized to produce a heat sink, and a laser diode was installed on the heat sink. As a result, the laser diode oscillated stably. This shows that this heat sink can be sufficiently used practically.
【０１１４】（実施例５）Ｃｕの含有率が１５重量％の
Ｃｕ−Ｗ−Ｍｏ焼結体からなり、縦×横×厚みが１０ｍ
ｍ×１０ｍｍ×０．３ｍｍの基板を用意した。硝酸を純
水で希釈した溶液にこの基板を３分間浸した。この基板
の表面にダイヤモンド砥粒で傷つけ処理を施した後に図
１で示す熱フィラメントＣＶＤ装置１の基板保持台２７
上に基板２６を載置した。(Example 5) A Cu—W—Mo sintered body having a Cu content of 15% by weight and a length × width × thickness of 10 m
A substrate of mx 10 mm x 0.3 mm was prepared. This substrate was immersed in a solution of nitric acid diluted with pure water for 3 minutes. After subjecting the surface of the substrate to damage treatment with diamond abrasive grains, the substrate holding table 27 of the hot filament CVD apparatus 1 shown in FIG.
The substrate 26 was placed thereon.
【０１１５】タングステンフィラメント２５の温度を約
２１００℃とし、メタンの濃度が２モル％のメタンと水
素の混合ガスをガス導入口２２から反応容器２１内に流
した。反応容器２１内の圧力を７０Ｔｏｒｒとした。こ
の条件で４０時間かけて基板上にダイヤモンド薄膜層を
合成した。ダイヤモンド薄膜層の厚さは２２μｍであ
り、基板の反りは３μｍであった。The temperature of the tungsten filament 25 was set to about 2100 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 2 mol% was flowed from the gas inlet 22 into the reaction vessel 21. The pressure in the reaction vessel 21 was set to 70 Torr. Under these conditions, a diamond thin film layer was synthesized on the substrate over 40 hours. The thickness of the diamond thin film layer was 22 μm, and the warpage of the substrate was 3 μm.
【０１１６】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後にＣｕＫα管球から発生するＸ線をダイヤモン
ド薄膜層に照射してＸ線回折チャートを得た。このＸ線
回折チャートより、Ｗの（１１０）のピークの強度（高
さ）ＩW （１１０）とＣｕの（２００）面のピークの強
度（高さ）ＩCu（２００）との比ＩW （１１０）／ＩCu
（２００）は１２０であった。After polishing the surface of the diamond thin film layer to a mirror surface, the diamond thin film layer was irradiated with X-rays generated from a CuKα tube to obtain an X-ray diffraction chart. From this X-ray diffraction chart, the ratio I W between the intensity (height) I W (110) of the peak of W (110) and the intensity (height) I Cu (200) of the peak of the (200) plane of Cu was obtained. (110) / I Cu
(200) was 120.
【０１１７】この基板を縦×横×厚みが２ｍｍ×１ｍｍ
×０．３ｍｍとなるように切断してもダイヤモンド薄膜
層が基板から剥離することはなかった。その後、基板の
面のうちダイヤモンド薄膜層を形成した面と反対側の面
を磨きメタライズを施してヒートシンクを作製した。レ
ーザダイオードをこのヒートシンク上に設置したとこ
ろ、レーザダイオードは発振した。このことより、この
ヒートシンクは十分実用に供することができるといえ
る。This substrate is 2 mm × 1 mm in length × width × thickness.
The diamond thin film layer did not peel off from the substrate even when cut to a size of × 0.3 mm. Thereafter, the surface of the substrate opposite to the surface on which the diamond thin film layer was formed was polished and metallized to produce a heat sink. When the laser diode was placed on the heat sink, the laser diode oscillated. From this, it can be said that this heat sink can be sufficiently used practically.
【０１１８】（実施例６）Ｃｕの含有率が１１重量％の
Ｃｕ−Ｗ焼結体からなり、縦×横×厚みが１３．５ｍｍ
×１３．５ｍｍ×０．６ｍｍの基板を用意した。この基
板を約８分間王水（濃硝酸と濃塩酸とを体積比１：３で
混合した溶液）に浸した。この基板の表面にダイヤモン
ド砥粒で傷つけ処理を施した後に基板を図１で示す熱フ
ィラメントＣＶＤ装置の基板保持台２７上に基板２６を
載置した。(Example 6) A Cu-W sintered body having a Cu content of 11% by weight and a length x width x thickness of 13.5 mm
A substrate of × 13.5 mm × 0.6 mm was prepared. This substrate was immersed in aqua regia (a solution in which concentrated nitric acid and concentrated hydrochloric acid were mixed at a volume ratio of 1: 3) for about 8 minutes. After the surface of the substrate was damaged by diamond abrasive grains, the substrate was placed on a substrate holder 27 of a hot filament CVD apparatus shown in FIG.
【０１１９】タングステンフィラメント２５の温度を約
２０００℃とし、メタンの濃度が２モル％のメタンと水
素の混合ガスをガス導入口２２から反応容器２１内に導
入した。反応容器２１内の圧力を６０Ｔｏｒｒに維持し
た。この条件で４５時間かけて基板２６上にダイヤモン
ド薄膜層を合成した。得られたダイヤモンド薄膜層の厚
さは２５μｍであり、基板の反りは２μｍであった。The temperature of the tungsten filament 25 was set to about 2000 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 2 mol% was introduced into the reaction vessel 21 from the gas inlet 22. The pressure in the reaction vessel 21 was maintained at 60 Torr. Under these conditions, a diamond thin film layer was synthesized on the substrate 26 over 45 hours. The thickness of the obtained diamond thin film layer was 25 μm, and the warpage of the substrate was 2 μm.
【０１２０】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後にＣｕＫα管球から発生するＸ線をダイヤモン
ド薄膜層に照射してＸ線回折チャートを得た。得られた
Ｘ線回折チャートより、Ｗの（２１１）面のピークの強
度（高さ）ＩW （２１１）とＣｕの（２００）面のピー
クの強度（高さ）ＩCu（２００）との比ＩW （２１１）
／ＩCu（２００）は４５であった。After polishing the surface of the diamond thin film layer to a mirror surface, the diamond thin film layer was irradiated with X-rays generated from a CuKα tube to obtain an X-ray diffraction chart. From the obtained X-ray diffraction chart, the peak intensity (height) I W (211) of the (211) plane of W and the peak intensity (height) I Cu (200) of the (200) plane of Cu were obtained. Ratio I W (211)
/ I Cu (200) was 45.
【０１２１】基板を縦×横×厚みが２ｍｍ×１ｍｍ×
０．６ｍｍとなるように切断してもダイヤモンド薄膜層
が基板から剥離することはなかった。その後、この基板
にメタライズを施してヒートシンクを作製した。ヒート
シンク上にレーザダイオードを設置したところ、レーザ
ダイオードは安定して発振した。このことより、このヒ
ートシンクは実用に供することができるといえる。The substrate is vertically × wide × thickness 2 mm × 1 mm ×
The diamond thin film layer did not peel off from the substrate even when cut to 0.6 mm. Thereafter, the substrate was metallized to produce a heat sink. When the laser diode was placed on the heat sink, the laser diode oscillated stably. From this, it can be said that this heat sink can be put to practical use.
【０１２２】（実施例７）Ｃｕの含有率が１１重量％の
Ｃｕ−Ｗ焼結体からなり、縦×横×厚みが１３．５ｍｍ
×１３．５ｍｍ×０．６３５ｍｍの基板を用意した。こ
の基板の表面にＣｕを含まない中間層として厚さ５μｍ
のＳｉを蒸着した。この中間層にダイヤモンド砥粒で傷
つけ処理を施した後に図７で示すマイクロ波プラズマＣ
ＶＤ装置１００の基板保持台１０１上に基板１０２を設
置した。(Example 7) A Cu-W sintered body having a Cu content of 11% by weight and a length x width x thickness of 13.5 mm
A substrate of × 13.5 mm × 0.635 mm was prepared. 5 μm thick as an intermediate layer containing no Cu on the surface of this substrate
Of Si was deposited. Microwave plasma C shown in FIG.
The substrate 102 was set on the substrate holder 101 of the VD apparatus 100.
【０１２３】基板１０２の温度を約９００℃とし、メタ
ンの濃度が２．５モル％のメタンと水素の混合ガスをガ
ス導入口１０９から反応容器１０７内に導入した。反応
容器１０７内の圧力を１００Ｔｏｒｒに維持して３０時
間かけて基板１０２上にダイヤモンド薄膜層を合成し
た。ダイヤモンド薄膜層の厚さは２３μｍであり、基板
の反りは４μｍであった。The temperature of the substrate 102 was set to about 900 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 2.5 mol% was introduced into the reaction vessel 107 through the gas inlet 109. A diamond thin film layer was synthesized on the substrate 102 over 30 hours while maintaining the pressure in the reaction vessel 107 at 100 Torr. The thickness of the diamond thin film layer was 23 μm, and the warpage of the substrate was 4 μm.
【０１２４】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後にＣｕＫα管球から発生するＸ線をダイヤモン
ド薄膜層に照射してＸ線回折チャートを得た。Ｘ線回折
チャートより、Ｗの（１１０）面のピークの強度（高
さ）ＩW （１１０）とＣｕの（２００）面のピークの強
度（高さ）ＩCu（２００）との比ＩW （１１０）／ＩCu
（２００）は１３０であった。縦×横×厚みが２ｍｍ×
１ｍｍ×０．６３５ｍｍとなるように基板を切断しても
ダイヤモンド薄膜層は基板から剥離することはなかっ
た。その後、基板にメタライズを施してヒートシンクを
作製した。ヒートシンクにレーザダイオードを設置した
ところ、レーザダイオードは安定して発振した。これよ
り、このヒートシンクは十分実用に供することができる
ことがわかる。After polishing the surface of the diamond thin film layer to a mirror surface, the diamond thin film layer was irradiated with X-rays generated from a CuKα tube to obtain an X-ray diffraction chart. From the X-ray diffraction chart, the ratio I W of the peak intensity (height) I W (110) of the (110) plane of W to the peak intensity (height) I Cu (200) of the (200) plane of Cu was obtained. (110) / I Cu
(200) was 130. Length x width x thickness 2mm x
Even when the substrate was cut to have a size of 1 mm × 0.635 mm, the diamond thin film layer did not peel off from the substrate. Thereafter, the substrate was metallized to produce a heat sink. When the laser diode was installed on the heat sink, the laser diode oscillated stably. This shows that this heat sink can be sufficiently used practically.
【０１２５】（実施例８）Ｃｕの含有率が１５重量％の
Ｃｕ−Ｗ焼結体からなり、縦×横×厚みが１３．５ｍｍ
×１３．５ｍｍ×０．６ｍｍの基板を用意した。この基
板を、フッ硝酸を純水で希釈した溶液に１分間つけた。
この基板の表面にダイヤモンド砥粒で傷つけ処理を施し
た後に図１で示す熱フィラメントＣＶＤ装置１の基板保
持台２７上に基板２６を載置した。(Example 8) A Cu-W sintered body having a Cu content of 15% by weight and a length x width x thickness of 13.5 mm
A substrate of × 13.5 mm × 0.6 mm was prepared. This substrate was immersed in a solution of hydrofluoric nitric acid diluted with pure water for 1 minute.
After the surface of the substrate was subjected to a scratching treatment with diamond abrasive grains, the substrate 26 was placed on the substrate holding table 27 of the hot filament CVD apparatus 1 shown in FIG.
【０１２６】タングステンフィラメント２５の温度を約
２１００℃とし、メタンの濃度が１モル％のメタンと水
素の混合ガスをガス導入口２２から反応容器２１内に導
入した。反応容器２１内の圧力を７０Ｔｏｒｒとした。
この条件で４４時間かけて基板２６上にダイヤモンド薄
膜層を形成した。ダイヤモンド薄膜層の厚さは２１μｍ
であり、基板の反りは３μｍであった。The temperature of the tungsten filament 25 was set to about 2100 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 1 mol% was introduced into the reaction vessel 21 from the gas inlet 22. The pressure in the reaction vessel 21 was set to 70 Torr.
Under these conditions, a diamond thin film layer was formed on the substrate 26 over 44 hours. The thickness of the diamond thin film layer is 21 μm
And the warpage of the substrate was 3 μm.
【０１２７】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後ＣｕＫα管球から発生するＸ線をダイヤモンド
薄膜層に照射してＸ線回折チャートを得た。Ｘ線回折チ
ャートより、Ｗの（１１０）面のピークの強度（高さ）
ＩW （１１０）とＣｕの（２００）面のピークの強度
（高さ）ＩCu（２００）との比ＩW （１１０）／Ｉ
Cu（２００）は１２１であった。また、このＸ線回折チ
ャートには、ＷＣのピークが多数現われた。After the surface of the diamond thin film layer was polished to a mirror surface, the diamond thin film layer was irradiated with X-rays generated from a CuKα tube to obtain an X-ray diffraction chart. From the X-ray diffraction chart, the intensity (height) of the peak of the (110) plane of W
I W (110) and (200) plane peak intensity (height) of the Cu I Cu (200) and the ratio I W (110) / I
Cu (200) was 121. In addition, many WC peaks appeared in this X-ray diffraction chart.
【０１２８】この基板を縦×横×厚みが２ｍｍ×１ｍｍ
×０．６ｍｍとなるように切断してもダイヤモンド薄膜
層は基板から剥離することはなかった。その後、基板に
メタライズを施してヒートシンクを作製した。ヒートシ
ンクにレーザダイオードを設置したところ、レーザダイ
オードは安定して発振した。このことより、このヒート
シンクは十分実用に供することができるといえる。This substrate is 2 mm × 1 mm in length × width × thickness.
The diamond thin film layer did not peel off from the substrate even when cut to a size of × 0.6 mm. Thereafter, the substrate was metallized to produce a heat sink. When the laser diode was installed on the heat sink, the laser diode oscillated stably. From this, it can be said that this heat sink can be sufficiently used practically.
【０１２９】（実施例９）実施例３では、基板をフッ硝
酸に浸すことにより基板表面のＷ粒子の表面粗さＲZ を
０．０９μｍとしたが、フッ硝酸で処理する以外にＷ粒
子の表面を粗くする方法について実施例９では検討し
た。その結果、以下の５つの方法によればＷ粒子の表面
を粗面化できることがわかった。Example 9 In Example 3, the surface roughness R Z of the W particles on the substrate surface was set to 0.09 μm by immersing the substrate in hydrofluoric nitric acid. In Example 9, a method for roughening the surface was examined. As a result, it was found that the following five methods can roughen the surface of the W particles.
【０１３０】１：基板に金属などの微粒を吹きつけるシ
ョットブラスト ２：アルゴンガスをプラズマ化し、基板にバイアスを印
加してアルゴン原子を基板に衝突させるアルゴンスパッ
タ ３：基板をアルカリ中に浸すアルカリ処理 ４：基板をフッ素プラズマにさらすフッ素プラズマ処理 ５：基板に電子ビームを照射する電子ビーム照射 （実施例１０）1: Shot blast for spraying fine particles such as metal onto the substrate 2: Argon sputtering, in which argon gas is turned into plasma and a bias is applied to the substrate to cause argon atoms to collide with the substrate 3: Alkaline treatment for immersing the substrate in alkali 4: Fluorine plasma treatment for exposing the substrate to fluorine plasma 5: Electron beam irradiation for irradiating the substrate with an electron beam (Example 10)
【０１３１】Ｃｕの含有率が１１重量％のＣｕ−Ｗ焼結
体からなり、縦×横×厚みが１３．５ｍｍ×１３．５ｍ
ｍ×０．６ｍｍの基板を用意した。硝酸を純水で希釈し
た溶液に基板を３０分間浸した。その後、基板の表面に
Ｘ線を照射してＸ線回折チャートを得た。このＸ線回折
チャートには、Ｃｕのピークは現われなかった。It is made of a Cu—W sintered body having a Cu content of 11% by weight and has a length × width × thickness of 13.5 mm × 13.5 m.
An mx 0.6 mm substrate was prepared. The substrate was immersed in a solution of nitric acid diluted with pure water for 30 minutes. Thereafter, the surface of the substrate was irradiated with X-rays to obtain an X-ray diffraction chart. No Cu peak appeared in this X-ray diffraction chart.
【０１３２】この基板の表面にダイヤモンド微粒で傷付
け処理を施した後、図１で示す熱フィラメントＣＶＤ装
置１の基板保持台２７上に基板２６載置した。その後、
タングステンフィラメント２５に交流電源２４から電流
を流し、タングステンフィラメント２５の温度を約２０
５０℃とした。After the surface of the substrate was scratched with diamond particles, the substrate 26 was placed on the substrate holder 27 of the hot filament CVD apparatus 1 shown in FIG. afterwards,
An electric current is applied to the tungsten filament 25 from the AC power supply 24 to reduce the temperature of the tungsten filament 25 to about 20.
50 ° C.
【０１３３】次に、ガス導入口からメタンの濃度が１モ
ル％のメタンと水素の混合ガスを反応容器２１内に導入
した。反応容器２１内の圧力を７０Ｔｏｒｒに維持した
条件で基板２６上にダイヤモンド薄膜層を４０時間かけ
て合成した。ダイヤモンド薄膜層の厚さは２４μｍであ
った。また、基板の反りは３μｍであった。Next, a mixed gas of methane and hydrogen having a methane concentration of 1 mol% was introduced into the reaction vessel 21 from the gas inlet. A diamond thin film layer was synthesized on the substrate 26 over 40 hours while maintaining the pressure in the reaction vessel 21 at 70 Torr. The thickness of the diamond thin film layer was 24 μm. The warpage of the substrate was 3 μm.
【０１３４】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後、縦×横×厚みが２ｍｍ×１ｍｍ×０．６ｍｍ
となるように基板を切断してもダイヤモンド薄膜は基板
から剥離することはなかった。After polishing the surface of the diamond thin film layer to a mirror surface, the length × width × thickness is 2 mm × 1 mm × 0.6 mm.
The diamond thin film did not peel off from the substrate even when the substrate was cut such that
【０１３５】その後、基板にメタライズを施してヒート
シンクを作製した。このヒートシンクにレーザダイオー
ドを設置したところ、レーザダイオードは発振した。こ
のことより、このヒートシンクは十分実用に供すること
ができることがわかる。Thereafter, the substrate was metallized to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated. This shows that this heat sink can be sufficiently used practically.
【０１３６】（実施例１１）Ｃｕの含有率が１５重量％
のＣｕ−Ｗ焼結体からなり、縦×横×厚みが１０ｍｍ×
１０ｍｍ×０．６ｍｍの基板を用意した。フッ硝酸（フ
ッ化水素酸と硝酸とを体積比１：１で混合したもの）を
純水で希釈した溶液に３分間この基板を浸した。これに
より、基板の表面粗さＲZ は４．５μｍとなった。この
酸処理後の基板の表面をエリオニクス社製ＥＲＡ８００
０型の３Ｄ−ＳＥＭ（three dimensional scanning ele
ctron microscope）で観察した。観察結果を図１１に示
す。(Example 11) The content of Cu was 15% by weight.
Of Cu-W sintered body, length × width × thickness 10mm ×
A 10 mm × 0.6 mm substrate was prepared. This substrate was immersed in a solution of hydrofluoric nitric acid (a mixture of hydrofluoric acid and nitric acid at a volume ratio of 1: 1) diluted with pure water for 3 minutes. Thereby, the surface roughness R Z of the substrate became 4.5 μm. The surface of the substrate after the acid treatment was treated with ERA800 manufactured by Elionix.
0 type 3D-SEM (three dimensional scanning ele
(ctron microscope). The observation results are shown in FIG.
【０１３７】図１１より、酸処理された基板表面にはＷ
粒子が露出しており、露出したＷ粒子の表面の粗さＲZ
は０．０８μｍであった。As shown in FIG. 11, the acid-treated substrate surface has W
The particles are exposed and the surface roughness R Z of the exposed W particles
Was 0.08 μm.
【０１３８】また、この基板の表面をＦＥＳＥＭ（fiel
d emission scanning electron microscope ）により観
察した。その観察結果を図１２に示す。Further, the surface of this substrate was treated with FESEM (fiel
d emission scanning electron microscope). FIG. 12 shows the observation results.
【０１３９】次に、酸処理後の基板の表面にダイヤモン
ド微粒で傷付け処理を施した後に図１で示す熱フィラメ
ントＣＶＤ装置１の基板保持台２７上に基板２６を設置
した。Next, the surface of the substrate after the acid treatment was scratched with diamond fine particles, and then the substrate 26 was set on the substrate holding table 27 of the hot filament CVD apparatus 1 shown in FIG.
【０１４０】タングステンフィラメント２５の温度を約
２１００℃とし、メタンの濃度が１モル％のメタンと水
素の混合ガスをガス導入口２２から反応容器２１内へ流
した。反応容器２１内の圧力を７０Ｔｏｒｒに維持し
た。この条件で、４０時間かけて基板２６上にダイヤモ
ンド薄膜層を合成した。ダイヤモンド薄膜層の厚さは２
２μｍであり、基板の反りは２．５μｍであった。The temperature of the tungsten filament 25 was set to about 2100 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 1 mol% was flowed from the gas inlet 22 into the reaction vessel 21. The pressure in the reaction vessel 21 was maintained at 70 Torr. Under these conditions, a diamond thin film layer was synthesized on the substrate 26 over 40 hours. The thickness of the diamond thin film layer is 2
2 μm, and the warpage of the substrate was 2.5 μm.
【０１４１】その後、ダイヤモンド薄膜層の表面を研磨
して鏡面にした後に、縦×横×厚みが２ｍｍ×１ｍｍ×
０．６ｍｍとなるように基板を切断してもダイヤモンド
薄膜は基板から剥離することはなかった。Thereafter, the surface of the diamond thin film layer was polished to a mirror surface, and then, the length × width × thickness was 2 mm × 1 mm ×
Even when the substrate was cut to 0.6 mm, the diamond thin film did not peel off from the substrate.
【０１４２】その後、基板の面のうちダイヤモンド薄膜
層を形成した面と反対側の面を磨き、この面にメタライ
ズを施してヒートシンクを作製した。このヒートシンク
上にレーザダイオードを設置したところ、レーザダイオ
ードは安定して発振した。このことより、このヒートシ
ンクは十分実用に供することができるということがわか
る。Thereafter, the surface of the substrate opposite to the surface on which the diamond thin film layer was formed was polished, and this surface was metallized to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated stably. This shows that this heat sink can be sufficiently used practically.
【０１４３】（実施例１２）Ｃｕの含有率が１５重量％
のＣｕ−Ｗ焼結体からなり、縦×横×厚みが１３．５ｍ
ｍ×１３．５ｍｍ×０．６ｍｍの基板を用意した。この
基板を１分間過酸化水素水に浸し、さらにその後、この
基板を５分間硝酸に浸し、基板の表面の粗さＲZ を４．
５μｍとした。この基板の表面にダイヤモンド微粒で傷
付け処理を施した後に図１で示す熱フィラメントＣＶＤ
装置１の基板保持台２７上に基板２６を設置した。Example 12 The Cu content was 15% by weight.
Made of a Cu-W sintered body, having a length x width x thickness of 13.5 m
A substrate of mx 13.5 mm x 0.6 mm was prepared. The substrate is immersed in a hydrogen peroxide solution for 1 minute, and then the substrate is immersed in nitric acid for 5 minutes to obtain a substrate having a surface roughness RZ of 4.
The thickness was 5 μm. After subjecting the surface of the substrate to a scratch treatment with diamond fine particles, the hot filament CVD shown in FIG.
The substrate 26 was set on the substrate holding table 27 of the apparatus 1.
【０１４４】タングステンフィラメント２５の温度を約
２１００℃とし、ガス導入口２２からメタンの濃度が１
モル％のメタンと水素の混合ガスを反応容器２１内に導
入した。反応容器２１内の圧力を７０Ｔｏｒｒとした。
この条件で、４０時間かけて基板２６上にダイヤモンド
薄膜層を形成した。ダイヤモンド薄膜層の厚さは２１μ
ｍであり、基板の反りは２．５μｍであった。The temperature of the tungsten filament 25 is set to about 2100 ° C.
A mixed gas of mole% of methane and hydrogen was introduced into the reaction vessel 21. The pressure in the reaction vessel 21 was set to 70 Torr.
Under these conditions, a diamond thin film layer was formed on the substrate 26 over 40 hours. The thickness of the diamond thin film layer is 21μ
m, and the warpage of the substrate was 2.5 μm.
【０１４５】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後に縦×横×厚みが２ｍｍ×１ｍｍ×０．６ｍｍ
となるように基板を切断してもダイヤモンド薄膜層は基
板から剥離することはなかった。その後、基板の面のう
ちダイヤモンド薄膜層が形成された面と反対側の面を磨
きメタライズを施してヒートシンクを作製した。このヒ
ートシンク上にレーザダイオードを設置したところ、レ
ーザダイオードは発振した。このことより、このヒート
シンクは十分実用に供することができることがわかる。After polishing the surface of the diamond thin film layer to a mirror surface, the length × width × thickness is 2 mm × 1 mm × 0.6 mm
The diamond thin film layer did not peel off from the substrate even when the substrate was cut such that Thereafter, the surface of the substrate opposite to the surface on which the diamond thin film layer was formed was polished and metallized to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated. This shows that this heat sink can be sufficiently used practically.
【０１４６】（実施例１３）(Embodiment 13)
【０１４７】Ｃｕの含有率が１０重量％でＣｕ−Ｍｏ焼
結体からなり、縦×横×厚みが１５ｍｍ×１５ｍｍ×１
ｍｍの基板を用意した。この基板を３０分間硫酸に浸け
た。これにより、基板の表面からの深さが３０μｍ以内
の部分での空孔率を２５体積％とし、かつ基板の表面か
らの深さが３０μｍ以内の部分でのＣｕの含有率を２重
量％とした。なお、基板全体のＣｕの含有率は１０重量
％のままであった。The Cu content was 10% by weight, which was made of a Cu—Mo sintered body and had a length × width × thickness of 15 mm × 15 mm × 1.
mm substrate was prepared. This substrate was immersed in sulfuric acid for 30 minutes. As a result, the porosity at a portion within 30 μm from the surface of the substrate is 25% by volume, and the Cu content at a portion within 30 μm from the surface of the substrate is 2% by weight. did. The Cu content of the entire substrate remained at 10% by weight.
【０１４８】この基板の表面にダイヤモンド微粒で傷付
け処理を施した後に図４で示すマイクロ波プラズマＣＶ
Ｄ装置１００内の基板保持台１０１上に基板１０２を載
置した。基板１０２の温度を約８５０℃とし、導入口１
０９から反応容器１０７へメタンの濃度が３モル％のメ
タンと水素の混合ガスを導入した。反応容器１０７内の
圧力を１４０Ｔｏｒｒに維持した。After the surface of the substrate was scratched with diamond fine particles, the microwave plasma CV shown in FIG.
The substrate 102 was placed on the substrate holding table 101 in the D apparatus 100. The temperature of the substrate 102 is set to about 850 ° C., and the inlet 1
From 09, a mixed gas of methane and hydrogen having a methane concentration of 3 mol% was introduced into the reaction vessel 107. The pressure in the reaction vessel 107 was maintained at 140 Torr.
【０１４９】この条件で、２０時間かけて基板１０２上
にダイヤモンド薄膜層を合成した。ダイヤモンド薄膜層
の厚さは２２μｍであり、基板の反りは４μｍであっ
た。Under these conditions, a diamond thin film layer was synthesized on the substrate 102 for 20 hours. The thickness of the diamond thin film layer was 22 μm, and the warpage of the substrate was 4 μm.
【０１５０】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後、縦×横×厚みが２ｍｍ×１ｍｍ×１ｍｍとな
るように基板を切断してもダイヤモンド薄膜層が基板か
ら剥離することはなかった。その後、基板の面のうちダ
イヤモンド薄膜層を形成した面と反対側の面を磨き、こ
の面にメタライズを施してヒートシンクを作製した。こ
のヒートシンク上にレーザダイオードを設置したとこ
ろ、レーザダイオードは発振した。このことより、この
ヒートシンクは十分実用に供することができることがわ
かる。After the surface of the diamond thin film layer was polished to a mirror surface, the diamond thin film layer was not peeled off from the substrate even when the substrate was cut so as to have a length × width × thickness of 2 mm × 1 mm × 1 mm. . Thereafter, the surface of the substrate opposite to the surface on which the diamond thin film layer was formed was polished, and this surface was metallized to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated. This shows that this heat sink can be sufficiently used practically.
【０１５１】（実施例１４）Ｃｕの含有率が１５重量％
のＣｕ−Ｗ焼結体からなり、縦×横×厚みが１０ｍｍ×
１０ｍｍ×０．３ｍｍの基板を用意した。この基板を４
０分間塩酸に浸けることにより、基板の表面の粗さＲZ
は３．６μｍとなった。(Example 14) The Cu content was 15% by weight.
Of Cu-W sintered body, length × width × thickness 10mm ×
A 10 mm × 0.3 mm substrate was prepared. This board is 4
By immersing in hydrochloric acid for 0 minutes, the surface roughness R Z of the substrate is
Was 3.6 μm.
【０１５２】この基板の表面にダイヤモンド微粒で傷付
け処理を施した後に図４で示すマイクロ波プラズマＣＶ
Ｄ装置の基板保持台１０１上に基板１０２を載置した。
基板１０２の温度を約８５０℃とし、導入口１０９から
反応容器１０７へメタンの濃度が３．５モル％のメタン
と水素の混合ガスを導入した。反応容器１０７内の圧力
を１４０Ｔｏｒｒに維持した。この条件で、２０時間か
けて基板１０２の上にダイヤモンド薄膜層を形成した。
ダイヤモンド薄膜層の厚さは２５μｍであり、基板の反
りは２．７μｍであった。After the surface of the substrate was subjected to a scratching treatment with diamond fine particles, the microwave plasma CV shown in FIG.
The substrate 102 was placed on the substrate holding table 101 of the D apparatus.
The temperature of the substrate 102 was set to about 850 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 3.5 mol% was introduced from the inlet 109 into the reaction vessel 107. The pressure in the reaction vessel 107 was maintained at 140 Torr. Under these conditions, a diamond thin film layer was formed on the substrate 102 for 20 hours.
The thickness of the diamond thin film layer was 25 μm, and the warpage of the substrate was 2.7 μm.
【０１５３】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後に縦×横×厚みが２ｍｍ×１ｍｍ×０．３ｍｍ
となるように基板を切断してもダイヤモンド薄膜層が基
板から剥離することはなかった。その後、基板の面のう
ちダイヤモンド薄膜層を形成した面と反対側の面を磨
き、この面にメタライズを施してヒートシンクを作製し
た。このヒートシンク上にレーザダイオードを設置した
ところ、レーザダイオードは発振した。このことより、
このヒートシンクは十分実用に供することができること
がわかる。After polishing the surface of the diamond thin film layer to a mirror surface, the length × width × thickness is 2 mm × 1 mm × 0.3 mm
The diamond thin film layer did not peel off from the substrate even when the substrate was cut such that Thereafter, the surface of the substrate opposite to the surface on which the diamond thin film layer was formed was polished, and this surface was metallized to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated. From this,
It can be seen that this heat sink can be sufficiently provided for practical use.
【０１５４】（実施例１５）Ｃｕの含有率が１１重量％
のＣｕ−Ｗ焼結体からなり、縦×横×厚みが１０ｍｍ×
１０ｍｍ×０．６ｍｍの基板を用意した。この基板を、
純水で希釈したフッ硝酸の溶液に１分間浸したのち、硝
酸に５分間浸した。その後、この基板にＣｕＫα管球か
ら発生するＸ線を照射してＸ線回折チャートを得た。そ
のＸ線回折チャートを図１３に示す。(Example 15) Cu content of 11% by weight
Of Cu-W sintered body, length × width × thickness 10mm ×
A 10 mm × 0.6 mm substrate was prepared. This board
After immersion for 1 minute in a solution of hydrofluoric nitric acid diluted with pure water, it was immersed in nitric acid for 5 minutes. Thereafter, the substrate was irradiated with X-rays generated from a CuKα bulb to obtain an X-ray diffraction chart. FIG. 13 shows the X-ray diffraction chart.
【０１５５】図１３より、酸処理後の基板の表面のＸ線
回折チャートには、Ｃｕのピークが現われていないこと
がわかる。FIG. 13 shows that no Cu peak appears in the X-ray diffraction chart of the surface of the substrate after the acid treatment.
【０１５６】次に、この基板の表面にダイヤモンド微粒
を用いて傷付け処理を行なった後に図１で示す熱フィラ
メントＣＶＤ装置１の基板保持台２７上に基板２６を載
置した。タングステンフィラメント２５の温度を２１０
０℃とし、メタンの濃度が１モル％のメタンと水素の混
合ガスをガス導入口２２から反応容器２１内に流した。
反応容器２１の圧力を７０Ｔｏｒｒとした。この条件で
４０時間かけて基板２６上にダイヤモンド薄膜層を形成
した。ダイヤモンド薄膜層の厚さは２０μｍであり、基
板の反りは２．５μｍであった。Next, the surface of the substrate was scratched using diamond fine particles, and then the substrate 26 was placed on the substrate holding table 27 of the hot filament CVD apparatus 1 shown in FIG. The temperature of the tungsten filament 25 to 210
The temperature was set to 0 ° C., and a mixed gas of methane and hydrogen having a methane concentration of 1 mol% was flowed into the reaction vessel 21 from the gas inlet 22.
The pressure of the reaction vessel 21 was set to 70 Torr. Under these conditions, a diamond thin film layer was formed on the substrate 26 over 40 hours. The thickness of the diamond thin film layer was 20 μm, and the warpage of the substrate was 2.5 μm.
【０１５７】ダイヤモンド薄膜層の表面を研磨して鏡面
にした後に、縦×横×厚みが２ｍｍ×１ｍｍ×０．６ｍ
ｍとなるように基板を切断してもダイヤモンド薄膜層が
基板から剥離することはなかった。その後、基板の面の
うちダイヤモンド薄膜層が形成された面と反対側の面を
磨き基板の厚みを０．３ｍｍとして基板にメタライズを
施してヒートシンクを作製した。このヒートシンクにレ
ーザダイオードを設置したところ、レーザダイオードは
発振した。このことより、このヒートシンクは十分実用
に供することができるといえる。After polishing the surface of the diamond thin film layer to a mirror surface, the length × width × thickness is 2 mm × 1 mm × 0.6 m
Even when the substrate was cut so as to obtain a value of m, the diamond thin film layer did not peel off from the substrate. Thereafter, the surface of the substrate opposite to the surface on which the diamond thin film layer was formed was polished, and the thickness of the substrate was 0.3 mm, and the substrate was metallized to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated. From this, it can be said that this heat sink can be sufficiently used practically.
【０１５８】（比較例３）比較例３では、実施例１５で
の酸処理工程の条件を変えた。実施例１５では、基板
を、純水で希釈したフッ硝酸で１分間浸した後に硝酸に
５分間浸したが、比較例３では、基板を、純水で希釈し
たフッ硝酸に１０秒間浸し、その後は基板を硝酸に浸さ
なかった。酸処理後の基板に実施例１５と同様の条件で
ダイヤモンド薄膜層を形成した。このダイヤモンド薄膜
層に、ＣｕＫα管球から発生するＸ線を照射してＸ線回
折チャートを得た。そのＸ線回折チャートを図１４に示
す。Comparative Example 3 In Comparative Example 3, the conditions of the acid treatment step in Example 15 were changed. In Example 15, the substrate was immersed in hydrofluoric nitric acid diluted with pure water for 1 minute and then immersed in nitric acid for 5 minutes. In Comparative Example 3, the substrate was immersed in hydrofluoric nitric acid diluted with pure water for 10 seconds. Did not soak the substrate in nitric acid. A diamond thin film layer was formed on the substrate after the acid treatment under the same conditions as in Example 15. The diamond thin film layer was irradiated with X-rays generated from a CuKα tube to obtain an X-ray diffraction chart. FIG. 14 shows the X-ray diffraction chart.
【０１５９】図１４より、Ｘ線回折チャートでは、Ｃｕ
のピークが現われていることがわかる。ダイヤモンドの
表面を研磨して鏡面にした後に基板の大きさが縦×横×
厚みが２ｍｍ×１ｍｍ×０．６ｍｍとなるように基板を
切断したところ、ダイヤモンド薄膜の一部が基板から剥
離した。As shown in FIG. 14, the X-ray diffraction chart shows that Cu
It can be seen that the peak of appears. After polishing the surface of the diamond to a mirror surface, the size of the substrate is vertical × horizontal ×
When the substrate was cut so as to have a thickness of 2 mm × 1 mm × 0.6 mm, a part of the diamond thin film was separated from the substrate.
【０１６０】（実施例１６）空孔率が２１体積％でタン
グステン金属焼結体からなり、縦×横×厚みが１００ｍ
ｍ×８０ｍｍ×１ｍｍの図１８で示すような多孔体の基
板母材３１０を用意した。空孔３１１を有する基板母材
３１０の表面にダイヤモンド微粒で傷つけ処理を施した
後、基板母材３１０を基板保持台２７上に載置した。そ
の後、タングステンフィラメント２５に交流電源２４か
ら電流を流し、タングステンフィラメント２５の温度を
約２０５０℃とした。(Example 16) A porosity of 21% by volume, made of a tungsten metal sintered body, and having a length × width × thickness of 100 m
A porous base material 310 of m × 80 mm × 1 mm as shown in FIG. 18 was prepared. After the surface of the substrate base material 310 having the holes 311 was subjected to a scratching treatment with diamond fine particles, the substrate base material 310 was placed on the substrate holding table 27. Thereafter, an electric current was passed from the AC power supply 24 to the tungsten filament 25, and the temperature of the tungsten filament 25 was set to about 2050 ° C.
【０１６１】次に、ガス導入口２２からメタンの濃度が
１モル％の水素とメタンとの混合ガスを反応容器２１内
に導入した。反応容器内の圧力を７０Ｔｏｒｒに維持し
た条件で基板母材３１０上に図１９で示すようなダイヤ
モンド薄膜層３２０を４０時間かけて合成した。ダイヤ
モンド薄膜層３２０の厚さは２４μｍであった。次に、
加熱用のヒータ上に銅板を載置し、この銅板上にダイヤ
モンド薄膜層３２０が形成された基板母材３１０を載置
した。Next, a mixed gas of hydrogen and methane having a methane concentration of 1 mol% was introduced into the reaction vessel 21 from the gas inlet 22. Under the condition that the pressure in the reaction vessel was maintained at 70 Torr, a diamond thin film layer 320 as shown in FIG. The thickness of the diamond thin film layer 320 was 24 μm. next,
A copper plate was placed on a heater for heating, and a substrate base material 310 having a diamond thin film layer 320 formed thereon was placed on the copper plate.
【０１６２】ヒータを用いて銅を温度１１００℃まで加
熱して溶かし１０時間かけて基板母材３１０の空孔３１
１内に銅を浸入させた。その後、基板母材を縦×横×厚
みが１０ｍｍ×１０ｍｍ×１ｍｍとなるように切断し
た。ダイヤモンド薄膜層に鏡面研磨を施し、縦×横×厚
みが２ｍｍ×１ｍｍ×１ｍｍとなるように基板母材を切
断したヒートシンクを得た。このとき、ダイヤモンド薄
膜層が基板母材から剥離することはなかった。ダイヤモ
ンド薄膜層と基板母材とにメタライズを施して図２０で
示すようなヒートシンクを得た。The copper was heated to a temperature of 1100 ° C. using a heater and melted.
1 was infiltrated with copper. Thereafter, the substrate base material was cut so that the length × width × thickness was 10 mm × 10 mm × 1 mm. The diamond thin film layer was mirror-polished to obtain a heat sink in which the base material of the substrate was cut so that the length × width × thickness was 2 mm × 1 mm × 1 mm. At this time, the diamond thin film layer did not peel off from the substrate base material. Metallization was performed on the diamond thin film layer and the substrate base material to obtain a heat sink as shown in FIG.
【０１６３】図２０を参照して、ヒートシンク３００
は、基板母材３１０とダイヤモンド薄膜層３２０により
構成される。基板母材３１０は微細なタングステン金属
粉が焼結したタングステン金属焼結体からなる。基板母
材３１０には多数の空孔３１１が存在し、これらの空孔
３１１はすべてつながっている。空孔３１１内に銅３１
２が充填されている。基板母材の表面層３１０ａでは、
空孔３１１にダイヤモンド薄膜層３２０が入り込んでい
る。Referring to FIG. 20, heat sink 300
Is composed of a substrate base material 310 and a diamond thin film layer 320. The substrate base material 310 is formed of a tungsten metal sintered body obtained by sintering fine tungsten metal powder. A large number of holes 311 exist in the substrate base material 310, and these holes 311 are all connected. Copper 31 in the hole 311
2 are filled. In the surface layer 310a of the substrate base material,
The diamond thin film layer 320 has entered the holes 311.
【０１６４】基板母材３１０の表面には多結晶のダイヤ
モンド薄膜層３２０が形成されている。A polycrystalline diamond thin film layer 320 is formed on the surface of substrate base material 310.
【０１６５】このヒートシンク３００にレーザダイオー
ドを載置したところ、レーザダイオードは発振した。こ
のことより、このヒートシンクは十分実用に供すること
ができることがわかる。When a laser diode was mounted on the heat sink 300, the laser diode oscillated. This shows that this heat sink can be sufficiently used practically.
【０１６６】（実施例１７）空孔率が２８体積％の多孔
体でタングステン金属焼結体からなり、縦×横×厚みが
１００ｍｍ×８０ｍｍ×２ｍｍの基板母材を用意した。
この基板母材の表面にダイヤモンド微粒で傷つけ処理を
施した。その後基板母材を図１で示す基板保持台２７上
に載置した。タングステンフィラメント２５の温度を約
２１００℃とし、ガス導入口２２からメタンの濃度が１
モル％の水素とメタンとの混合ガスを反応容器２１内に
流した。反応容器２１内の圧力を７０Ｔｏｒｒとした。
この条件で４０時間かけて基板母材上にダイヤモンド薄
膜層を形成した。ダイヤモンド薄膜層の厚さは２２μｍ
であった。(Example 17) A substrate base material having a porosity of 28% by volume and made of a tungsten metal sintered body and having a length, width, and thickness of 100 mm x 80 mm x 2 mm was prepared.
The surface of the substrate base material was subjected to a scratching treatment with diamond fine particles. Thereafter, the substrate base material was placed on the substrate holding table 27 shown in FIG. The temperature of the tungsten filament 25 is about 2100 ° C., and the methane concentration is 1
A mixed gas of mol% of hydrogen and methane was flowed into the reaction vessel 21. The pressure in the reaction vessel 21 was set to 70 Torr.
Under these conditions, a diamond thin film layer was formed on the substrate base material for 40 hours. The thickness of the diamond thin film layer is 22 μm
Met.
【０１６７】次に、ダイヤモンド薄膜層を下向きにして
基板母材を支持台上に載置し、基板母材上に銅板を置い
た。この銅板上にヒータを載置し、銅板を温度１１００
℃まで加熱して溶融させ、基板母材に銅を浸入させた。
その後、基板母材を縦×横×厚みが１０ｍｍ×１０ｍｍ
×２ｍｍとなるように切断し、ダイヤモンド薄膜層に鏡
面研磨を施した。その後、基板母材を縦×横×厚みが２
ｍｍ×１ｍｍ×１ｍｍとなるように切断してもダイヤモ
ンド薄膜層が基板母材から剥離することはなかった。Next, the substrate base material was placed on a support with the diamond thin film layer facing downward, and a copper plate was placed on the substrate base material. A heater is placed on this copper plate, and the copper plate is heated to a temperature of 1100.
C. to be melted by heating to a temperature of ℃ C.
After that, the substrate base material is length × width × thickness 10 mm × 10 mm.
The diamond thin film layer was mirror-polished to a size of 2 mm. Then, the substrate base material is vertically × width × thickness 2
The diamond thin film layer did not peel off from the substrate base material even when cut to have a size of 1 mm × 1 mm × 1 mm.
【０１６８】その後、基板母材の面のうち、ダイヤモン
ド薄膜層を形成した面と反対側の面を磨きメタライズを
施して、ヒートシンクを作製した。このヒートシンク上
にレーザダイオードを設置したところ、レーザダイオー
ドは発振した。これより、このヒートシンクは実用に供
することができるといえる。Thereafter, the surface of the substrate preform opposite to the surface on which the diamond thin film layer was formed was polished and metallized to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated. From this, it can be said that this heat sink can be put to practical use.
【０１６９】（実施例１８）空孔率が３５体積％の多孔
体でタングステン金属焼結体からなり、縦×横×厚みが
１００ｍｍ×８０ｍｍ×２ｍｍの基板母材を準備した。
この基板母材の表面にダイヤモンド微粒で傷つけ処理を
施した。この基板母材を図１で示す基板保持台２７上に
設置した。タングステンフィラメント２５の温度を約２
１００℃とし、メタンの濃度が１モル％の水素とメタン
との混合ガスをガス導入口２２から反応容器２１内に流
した。反応容器２１内の圧力を７０Ｔｏｒｒとした。こ
の条件で４０時間かけて基板母材上にダイヤモンド薄膜
層を形成した。ダイヤモンド薄膜層の厚さは２２μｍで
あった。Example 18 A base material of a porous material having a porosity of 35% by volume and made of a sintered tungsten metal and having a length, width, and thickness of 100 mm × 80 mm × 2 mm was prepared.
The surface of the substrate base material was subjected to a scratching treatment with diamond fine particles. This substrate base material was placed on the substrate holding table 27 shown in FIG. The temperature of the tungsten filament 25 to about 2
The temperature was set to 100 ° C., and a mixed gas of hydrogen and methane having a methane concentration of 1 mol% was flowed into the reaction vessel 21 from the gas inlet 22. The pressure in the reaction vessel 21 was set to 70 Torr. Under these conditions, a diamond thin film layer was formed on the substrate base material for 40 hours. The thickness of the diamond thin film layer was 22 μm.
【０１７０】次に、容器としてのるつぼを用意し、この
るつぼ内に銅を入れた。銅を温度１１００℃まで加熱し
て溶融させた。基板母材をるつぼに浸して基板母材の空
孔内に銅を浸入させた。その後、基板母材を縦×横×厚
みが１０ｍｍ×１０ｍｍ×２ｍｍとなるように切断した
後、ダイヤモンド薄膜層表面に鏡面研磨を施した。次
に、基板母材を研削した後に基板母材の縦×横×厚みが
２ｍｍ×１ｍｍ×１ｍｍとなるように切断しても基板母
材からダイヤモンド薄膜層が剥離することはなかった。
その後、基板母材の面のうち、ダイヤモンド薄膜層を形
成した面と反対側の面を磨きメタライズを施して、ヒー
トシンクを作製した。このヒートシンク上にレーザダイ
オードを設置したところ、レーザダイオードは発振し
た。これより、このヒートシンクは実用に供することが
できるといえる。Next, a crucible as a container was prepared, and copper was put in the crucible. The copper was heated to a temperature of 1100 ° C. and melted. The substrate preform was immersed in a crucible to allow copper to penetrate into the holes of the substrate preform. Thereafter, the substrate base material was cut so as to have a length, width, and thickness of 10 mm × 10 mm × 2 mm, and the surface of the diamond thin film layer was mirror-polished. Next, the diamond thin film layer was not peeled off from the substrate base material even when the substrate base material was cut so that the length × width × thickness of the substrate base material was 2 mm × 1 mm × 1 mm after the substrate base material was ground.
Thereafter, of the surface of the substrate base material, the surface opposite to the surface on which the diamond thin film layer was formed was polished and metallized to produce a heat sink. When the laser diode was set on this heat sink, the laser diode oscillated. From this, it can be said that this heat sink can be put to practical use.
【０１７１】（実施例１９）図２１に示すようにＳｉ、
ＡｌＮ、ＣｕＷ合金、またはＳｉＣからなる縦２０ｍｍ
×横２０ｍｍ×厚さ０．４ｍｍの放熱用基材８１を用意
した。その一表面をダイヤモンドパウダーを使用して傷
付け処理を行なった。その後、熱フィラメントＣＶＤ法
によりその一表面全体にダイヤモンドを成長させた。成
長条件は以下のとおりである。(Embodiment 19) As shown in FIG.
20mm length made of AlN, CuW alloy or SiC
A heat dissipation base material 81 having a width of 20 mm and a thickness of 0.4 mm was prepared. One surface was scratched using diamond powder. Thereafter, diamond was grown on the entire surface by hot filament CVD. The growth conditions are as follows.
【０１７２】 原料ガス １体積％メタン−水素 流量 ６００ｓｃｃｍ 圧力 ８０Ｔｏｒｒ 基板温度 ７１０℃ フィラメント タングステン フィラメント温度 ２１５０℃ 各放熱用基材８１の一表面には、密着性の高い気相合成
ダイヤモンド層８２が得られた。各気相合成ダイヤモン
ド層８２は、研磨後の厚さがそれぞれ２０μｍ、５０μ
ｍ、１００μｍとなるようにした。また、得られた各気
相合成ダイヤモンド層８２の熱伝導率をレーザフラッシ
ュ法で測定したところ、いずれも１３１０Ｗ／ｍ・Ｋで
あった。Source gas 1% by volume methane-hydrogen Flow rate 600 sccm Pressure 80 Torr Substrate temperature 710 ° C. Filament Tungsten Filament temperature 2150 ° C. A gas-phase synthetic diamond layer 82 with high adhesion is obtained on one surface of each heat dissipation base material 81. Was. Each of the vapor-phase synthetic diamond layers 82 has a thickness after polishing of 20 μm and 50 μm, respectively.
m and 100 μm. When the thermal conductivity of each of the obtained vapor-phase synthetic diamond layers 82 was measured by a laser flash method, all were 1310 W / m · K.
【０１７３】各気相合成ダイヤモンド層８２を研磨した
後、レーザ切断し、その表面にメタライズを施した。こ
のメタライズ層は、すべてＡｕ３μｍ／Ｐｔ０．０５μ
ｍ／Ｔｉ０．１μｍとした。また、放熱用基材８１の反
対側の表面にはＡｕを蒸着によりメタライズし、ＣｕＷ
合金からなるベース金属部材８３にろう材で接合した。
最後に、半導体素子８４としてＧａＡｓからなるＭＭＩ
Ｃを、その発熱領域を上にして気相合成ダイヤモンド層
８２上のメタライズ層にろう材を用いて接合した。After polishing each vapor phase synthetic diamond layer 82, it was laser cut and its surface was metallized. All the metallized layers are made of Au 3 μm / Pt 0.05 μ
m / Ti was 0.1 μm. Further, Au is metallized on the surface on the opposite side of the heat dissipation base material 81 by vapor deposition, and CuW
It was joined to a base metal member 83 made of an alloy with a brazing material.
Finally, an MMI made of GaAs is used as the semiconductor element 84.
C was joined to the metallized layer on the vapor-phase synthetic diamond layer 82 using a brazing filler metal with its heat generating region facing up.
【０１７４】比較例として、上述の気相合成ダイヤモン
ド層８２と、放熱用基材８１との積層部材からなるヒー
トシンクの代わりに、ダイヤモンド自立板（縦２０ｍｍ
×横２０ｍｍ×厚さ０．４ｍｍ、およびＢｅＯ基板（縦
２０ｍｍ×横２０ｍｍ×厚さ０．４ｍｍ）を用意し、上
記と同様に、ベース金属部材および半導体素子（ＭＭＩ
Ｃ）をそれぞれ接合した。As a comparative example, a diamond self-standing plate (20 mm long) was used instead of a heat sink formed of a laminated member of the above-described vapor-phase synthetic diamond layer 82 and a heat dissipation base material 81.
× 20 mm wide × 0.4 mm thick and a BeO substrate (20 mm long × 20 mm wide × 0.4 mm thick) were prepared, and the base metal member and the semiconductor element (MMI
C) were respectively bonded.
【０１７５】その結果、ダイヤモンド自立板を使用した
試料１３では、ＧａＡｓの半導体素子が搭載時に割れて
しまった。これに対して、本発明の各試料１〜１２は、
熱膨張率がＧａＡｓのそれに近づくため、ろう付けによ
る搭載時に半導体素子の割れが発生せず、搭載したＭＭ
ＩＣの半導体素子は安定して動作した。また、半導体素
子の割れが起こらなかった試料１〜１２および１４で
は、下記の表１に示すように熱抵抗が低く、特に本発明
の試料１〜１２の熱抵抗はＢｅＯを用いた試料１４より
も低かった。As a result, in Sample 13 using the self-standing diamond plate, the GaAs semiconductor element was broken at the time of mounting. In contrast, each of the samples 1 to 12 of the present invention
Since the coefficient of thermal expansion approaches that of GaAs, no cracking of the semiconductor element occurs at the time of mounting by brazing.
The semiconductor element of the IC operated stably. Further, in Samples 1 to 12 and 14 in which the semiconductor element did not crack, the thermal resistance was low as shown in Table 1 below. In particular, the thermal resistance of Samples 1 to 12 of the present invention was higher than that of Sample 14 using BeO. Was also low.
【０１７６】[0176]
【表１】 （実施例２０）上述の実施例１９と同様にして、図２２
で示すように縦１４ｍｍ×横１４ｍｍ×厚さ０．４ｍｍ
のＳｉからなる放熱用基材９１の一表面上に、気相合成
法によりダイヤモンド薄膜層を成長させた。このダイヤ
モンド薄膜層を研磨して放熱用基材９１の上に厚さ４０
μｍの気相合成ダイヤモンド層９２を有するヒートシン
クを作製した。[Table 1] (Embodiment 20) In the same manner as in Embodiment 19, FIG.
As shown by 14mm in height x 14mm in width x 0.4mm in thickness
A diamond thin film layer was grown on one surface of the heat dissipation base material 91 made of Si by a vapor phase synthesis method. This diamond thin film layer is polished to a thickness of 40
A heat sink having a μm vapor-phase synthetic diamond layer 92 was produced.
【０１７７】このヒートシンクの気相合成ダイヤモンド
層９２の上に、ポリイミド−Ｃｕ多層配線層（３層）９
５を設けた。その後、所定の位置にエキシマレーザを点
集光してビアホール加工を行ない貫通孔による層間配線
を形成した。次に、実施例１９と同様に、ヒートシンク
の放熱用基材９１側をＣｕＷベースの金属部材９３にろ
う付けし、気相合成ダイヤモンド層９２上の素子搭載部
にＭＭＩＣの半導体素子９４をろう付けによる接合し
た。その後、半導体素子９４と多層配線層９５との接続
を行なった。On the vapor-phase synthetic diamond layer 92 of the heat sink, a polyimide-Cu multilayer wiring layer (three layers) 9
5 were provided. Thereafter, an excimer laser was point-focused at a predetermined position, and a via hole was formed to form an interlayer wiring by a through hole. Next, in the same manner as in Example 19, the heat dissipation base material 91 side of the heat sink was brazed to a CuW-based metal member 93, and the MMIC semiconductor element 94 was brazed to the element mounting portion on the vapor-phase synthetic diamond layer 92. Joined by. Thereafter, connection between the semiconductor element 94 and the multilayer wiring layer 95 was made.
【０１７８】このヒートシンクに実装したＭＭＩＣの半
導体素子９４は、搭載時に割れが発生せず、また長期間
安定に動作し、その優れた放熱性が示された。The MMIC semiconductor element 94 mounted on the heat sink did not crack when mounted, operated stably for a long period of time, and exhibited excellent heat dissipation.
【０１７９】上述の実施例１９および２０より、以下の
ことがわかる。半導体素子の割れを防止するために、本
発明が提供する半導体モジュールは、熱伝導率が１００
Ｗ／ｍ・Ｋ以上である厚さ２００〜７００μｍの放熱用
基材と、その放熱用基材上に設けられた厚さ１０〜２０
０μｍの気相合成ダイヤモンド層と、気相合成ダイヤモ
ンド層上に搭載された大出力半導体素子とからなる。The following can be seen from Examples 19 and 20 described above. In order to prevent a semiconductor element from cracking, the semiconductor module provided by the present invention has a thermal conductivity of 100%.
A heat-dissipating base material having a thickness of 200 to 700 μm which is W / m · K or more, and a thickness of 10 to 20 provided on the heat-dissipating base material
It consists of a 0 μm vapor-phase synthetic diamond layer and a high-power semiconductor element mounted on the vapor-phase synthetic diamond layer.
【０１８０】本発明の半導体モジュールにおいては、放
熱用基材は、Ｓｉ、ＳｉＣ、ＡｌＮ、ＣｕＷ合金、Ｃｕ
Ｍｏ合金、ＣｕＭｏＷ合金から選ばれた少なくとも１つ
からなることが好ましい。基材は、実施例１〜１８で用
いたような、Ｃｕの濃度が表面に近づくにつれて小さく
なるものか、Ｗ多孔体の空孔にＣｕを埋め込んだもので
もよい。また、気相合成ダイヤモンド層は熱伝導率が１
０００Ｗ／ｍ・Ｋ以上であることが好ましい。In the semiconductor module of the present invention, the heat radiating substrate is made of Si, SiC, AlN, CuW alloy, Cu
It is preferable that it be made of at least one selected from a Mo alloy and a CuMoW alloy. The substrate may be such that the concentration of Cu decreases as approaching the surface, as used in Examples 1 to 18, or may be a material in which Cu is embedded in the pores of a W porous body. The vapor-phase synthetic diamond layer has a thermal conductivity of 1
It is preferably at least 000 W / m · K.
【０１８１】また、本発明の半導体モジュールは、半導
体素子の搭載に関する具体的な構成として、気相合成ダ
イヤモンド層の半導体素子搭載面の少なくとも一部にメ
タライズ層を有すること、メタライズ層がＡｕ、Ｍｏ、
Ｎｉ、Ｐｔ、Ｐｄ、Ｔｉ、Ｃｕ、Ａｌから選ばれた少な
くとも１つからなること、およびこのメタライズ層上に
大出力半導体素子がろう材により接合されている。Further, the semiconductor module of the present invention has a specific configuration relating to the mounting of the semiconductor element, in which a metallized layer is provided on at least a part of the semiconductor element mounting surface of the vapor-phase synthetic diamond layer, and the metallized layer is made of Au, Mo. ,
It is made of at least one selected from the group consisting of Ni, Pt, Pd, Ti, Cu, and Al, and a high-power semiconductor element is joined to the metallized layer by a brazing material.
【０１８２】さらに、本発明の半導体モジュールにおい
ては、搭載される大出力半導体素子は、ガリウム砒素を
主成分とし、中でも、大出力トランジスタはＭＭＩＣの
搭載に好適である。また、大出力半導体素子は、その発
熱領域と反対側の面を気相合成ダイヤモンド層側に接合
することが望ましい。Further, in the semiconductor module of the present invention, the high-output semiconductor element to be mounted contains gallium arsenide as a main component, and among them, the high-output transistor is suitable for mounting the MMIC. In addition, it is desirable that the surface of the high-power semiconductor element opposite to the heat generating region is bonded to the vapor-phase synthetic diamond layer side.
【０１８３】本発明の半導体モジュールにおいては、気
相合成ダイヤモンド層の大出力半導体素子が搭載される
側の面に、比誘電率５以下の絶縁層と金属配線層とから
なる多層配線層を形成することによって、さらに、半導
体素子の搭載密度を上げることができる。In the semiconductor module of the present invention, a multi-layer wiring layer composed of an insulating layer having a relative dielectric constant of 5 or less and a metal wiring layer is formed on the surface of the vapor phase synthetic diamond layer on which the high-power semiconductor element is mounted. By doing so, the mounting density of the semiconductor element can be further increased.
【０１８４】本発明による半導体モジュールにおいて
は、ヒートシンクまたは放熱基板とすべき放熱用基材の
半導体素子を実装する面の側に、厚さ１０〜２００μｍ
の薄い気相合成ダイヤモンド層を配置する。このように
薄い気相合成ダイヤモンド層を放熱用基材の上に配置す
ることによって、この気相合成ダイヤモンド層上に搭載
された半導体素子から発生する熱を効率よく放散するこ
とができる。また同時に、半導体素子の搭載時における
割れを防止することが可能となる。In the semiconductor module according to the present invention, a heat sink or a heat radiating substrate to be a heat radiating substrate has a thickness of 10 to 200 μm on the side where the semiconductor element is mounted.
A thin vapor-phase synthetic diamond layer having a small thickness. By arranging such a thin vapor-phase synthetic diamond layer on a heat-radiating substrate, heat generated from a semiconductor element mounted on this vapor-phase synthetic diamond layer can be efficiently dissipated. At the same time, it is possible to prevent cracking when the semiconductor element is mounted.
【０１８５】すなわち、半導体素子で発生した熱は、ま
ず高熱伝導率の気相合成ダイヤモンド層内を横方向に拡
散し、その後気相合成ダイヤモンド層の全面から放熱用
基材に拡散していく。このため、気相合成ダイヤモンド
層の厚みが薄くても、高効率の熱放散性をモジュールに
付与することが可能となる。気相合成ダイヤモンド層中
での横方向の良好な熱拡散を得るために、その熱伝導率
は１０００Ｗ／ｍ・Ｋ以上であることが望ましい。That is, the heat generated in the semiconductor element is first diffused laterally in the vapor-deposited diamond layer having a high thermal conductivity, and then diffused from the entire surface of the vapor-deposited diamond layer to the heat dissipation base. For this reason, even if the thickness of the vapor-phase synthetic diamond layer is small, it is possible to impart highly efficient heat dissipation to the module. In order to obtain good thermal diffusion in the lateral direction in the vapor phase synthetic diamond layer, the thermal conductivity is desirably 1000 W / m · K or more.
【０１８６】一方、放熱用基材の熱伝導率は、ダイヤモ
ンドの熱伝導率よりも小さくてもよいのであるが、小さ
すぎると気相合成ダイヤモンド層の放熱効果が打ち消さ
れてしまう。そのため、放熱用基材の熱伝導率は１００
Ｗ／ｍ・Ｋ以上である必要がある。このような熱伝導率
を有する放熱用基材として、具体的には、Ｓｉ、Ｓｉ
Ｃ、ＡｌＮ、Ｃｕ、ＣｕＷ合金、ＣｕＭｏ合金、ＣｕＭ
ｏＷ合金等を用いることが望ましい。On the other hand, the heat conductivity of the heat dissipation base material may be smaller than that of diamond. However, if it is too small, the heat dissipation effect of the vapor phase synthetic diamond layer is canceled. Therefore, the thermal conductivity of the heat dissipation base material is 100
It needs to be at least W / m · K. As a heat dissipation base material having such thermal conductivity, specifically, Si, Si
C, AlN, Cu, CuW alloy, CuMo alloy, CuM
It is desirable to use an oW alloy or the like.
【０１８７】また、一般的にダイヤモンドは、上記のよ
うに薄くなる機械的強度が弱くなる。しかも、ダイヤモ
ンドは熱膨張率が低いため、ＭＭＩＣのようなガリウム
砒素（ＧａＡｓ）を主成分とする半導体素子をろう付け
すると、熱膨張率の違いにより半導体素子が割れてしま
うという大きな問題があった。[0187] Generally, diamond is thin as described above, and the mechanical strength is weak. Moreover, since diamond has a low coefficient of thermal expansion, when a semiconductor element containing gallium arsenide (GaAs) as a main component such as MMIC is brazed, there is a serious problem that the semiconductor element is broken due to a difference in coefficient of thermal expansion. .
【０１８８】ところが、本発明によれば、ダイヤモンド
より熱膨張率が大きい放熱用基材の上に気相合成法によ
りダイヤモンドを厚さ２００μｍ以下に薄くコーティン
グする。これによって、得られる気相合成ダイヤモンド
層の機械的強度を損なうことなく、その熱膨張率を放熱
用基材に近づけることができる。その結果、この気相合
成ダイヤモンド層上にＧａＡｓの半導体素子をろう付け
しても、半導体素子の割れを防ぐことができる。However, according to the present invention, diamond is thinly coated to a thickness of 200 μm or less on a heat-radiating base material having a larger coefficient of thermal expansion than diamond by a vapor phase synthesis method. As a result, the coefficient of thermal expansion of the vapor-phase synthetic diamond layer obtained can be made closer to that of the heat-radiating substrate without impairing the mechanical strength. As a result, even if a GaAs semiconductor device is brazed on this vapor-phase synthetic diamond layer, cracking of the semiconductor device can be prevented.
【０１８９】気相合成ダイヤモンド層の厚さは１０μｍ
以上であれば十分な機械的強度の維持とともに、十分な
熱放散性を示すものであり、その厚さは２０μｍ以上が
さらに好ましい。しかし、気相合成ダイヤモンド層は厚
くなるとコストが上昇する上、特に２００μｍを超えて
厚くなると、下層の放熱用基材の影響がなくなって熱膨
張率が小さくなり、搭載時の半導体素子の割れが発生し
やすくなる。一方、放熱用基材の厚さは２００μｍ未満
ではその機械的強度が弱くなりすぎ、逆に７００μｍを
超えるとモジュール全体の放熱性が損なわれる。そのた
め、放熱用基材の厚さは、２００〜７００μｍの範囲が
好ましく、２５０〜５００μｍの範囲がさらに好まし
い。The thickness of the vapor-phase synthetic diamond layer is 10 μm.
If it is above, sufficient mechanical strength is maintained and sufficient heat dissipation is exhibited, and the thickness is more preferably 20 μm or more. However, when the vapor-phase synthetic diamond layer becomes thicker, the cost increases. In particular, when the thickness exceeds 200 μm, the influence of the underlying heat-radiating base material disappears, the coefficient of thermal expansion decreases, and cracks in the semiconductor element during mounting are reduced. More likely to occur. On the other hand, if the thickness of the heat dissipation base material is less than 200 μm, its mechanical strength is too weak, and if it exceeds 700 μm, the heat dissipation of the entire module is impaired. Therefore, the thickness of the heat dissipation base material is preferably in the range of 200 to 700 μm, and more preferably in the range of 250 to 500 μm.
【０１９０】なお、放熱用基材上に設けるダイヤモンド
層は、天然ダイヤモンドや高圧合成ダイヤモンドを使用
することも可能である。しかし、これらは基材との貼り
付けが難しく放熱性低下を引起し、大面積のものが作製
できない等の問題がある。気相合成法によれば、放熱用
基材上に薄いダイヤモンド層を直接成膜することがで
き、本発明において必要な熱伝導率および膜厚の気相合
成ダイヤモンド層を容易に得ることが可能である。その
上、天然ダイヤモンドや高圧合成ダイヤモンドに比べて
コストを大幅に低減することができる。The diamond layer provided on the heat dissipation base may be made of natural diamond or high-pressure synthetic diamond. However, these have a problem that it is difficult to attach them to the base material, which causes a decrease in heat dissipation, and that a large-area product cannot be manufactured. According to the vapor-phase synthesis method, a thin diamond layer can be directly formed on a heat-radiating substrate, and a vapor-phase synthetic diamond layer having a thermal conductivity and a film thickness required in the present invention can be easily obtained. It is. In addition, the cost can be significantly reduced as compared with natural diamond and high-pressure synthetic diamond.
【０１９１】上記した気相合成ダイヤモンド層と放熱用
基材とからなる積層部材は、ヒートシンクまたは放熱基
板として使用し、その気相合成ダイヤモンド層の上に大
出力トランジスタやＭＭＩＣ等の大出力半導体素子を搭
載する。これらの大出力半導体素子は、ＧａＡｓが主成
分となっている。また、半導体素子は通常は片側の表面
に発熱領域を有するが、この発熱領域と反対側の面を気
相合成ダイヤモンド層に対向させて搭載することができ
る。The above-mentioned laminated member composed of the vapor-phase synthetic diamond layer and the heat-radiating base material is used as a heat sink or a heat-radiating substrate, and a large-output semiconductor device such as a large-output transistor or MMIC is placed on the vapor-phase synthetic diamond layer. With. These high-power semiconductor elements are mainly composed of GaAs. The semiconductor element usually has a heat-generating region on one surface, but can be mounted with the surface opposite to the heat-generating region facing the vapor-phase synthetic diamond layer.
【０１９２】半導体素子を搭載するためには、気相合成
ダイヤモンド層の半導体素子搭載面に、Ａｕ、Ｍｏ、Ｎ
ｉ、Ｐｔ、Ｐｄ、Ｔｉ、Ｃｕ、Ａｌなどから選ばれた少
なくとも１種からなるメタライズ層を形成する。大出力
トランジスタではＭＭＩＣなどの大出力半導体素子は、
このメタライズ層上にＡｕＳｎ、ＡｕＧｅ、ＡｕＳｉな
どのろう材によって接合固定される。これらのメタライ
ズ層およびろう付け層の厚みは、合計で０．１〜５０μ
ｍの範囲が好ましい。In order to mount a semiconductor element, Au, Mo, N
A metallized layer made of at least one selected from i, Pt, Pd, Ti, Cu, Al and the like is formed. For high-output transistors, high-output semiconductor devices such as MMICs
The metallized layer is bonded and fixed by a brazing material such as AuSn, AuGe, or AuSi. The total thickness of the metallized layer and the brazing layer is 0.1 to 50 μm.
The range of m is preferred.
【０１９３】また、気相合成ダイヤモンド層の半導体素
子が搭載される側の面に、絶縁層と金属配線層からなる
多層配線層を形成してこの多層配線層を用いて半導体素
子と配線することにより、半導体素子の搭載密度をさら
に上げることができる。この場合、絶縁層の誘電率が小
さいほど、伝送によるノイズやロスを低減することがで
きるので、比誘電率が５以下の絶縁層が望ましい。A multilayer wiring layer composed of an insulating layer and a metal wiring layer is formed on the surface of the vapor phase synthetic diamond layer on the side on which the semiconductor element is mounted, and wiring is performed with the semiconductor element using this multilayer wiring layer. Thereby, the mounting density of the semiconductor element can be further increased. In this case, since the noise and loss due to transmission can be reduced as the dielectric constant of the insulating layer is smaller, an insulating layer having a relative dielectric constant of 5 or less is desirable.
【０１９４】なお、上記の気相合成ダイヤモンド層と放
熱用基材とからなる積層部材は、ヒートシンクまたは放
熱基板として、その放熱用基材の側のＣｕＷ等の通常の
ベース金属部内に接合して使用される。その際、放熱用
基材のベース金属の接合される面の側にＡｕ、Ｍｏ、Ｎ
ｉ、Ｐｔ、Ｐｄ、Ｔｉ、Ｃｕ、Ａｌなどから選ばれた少
なくとも１種からなるメタライズ層を形成し、ＡｕＳｎ
やＡｕＳｉなどのろう材を用いて接合する。The laminated member composed of the vapor-phase synthetic diamond layer and the heat-radiating base material is joined as a heat sink or a heat-radiating substrate to a normal base metal portion such as CuW on the heat-radiating base material side. used. At this time, Au, Mo, N
forming a metallized layer of at least one selected from i, Pt, Pd, Ti, Cu, Al, etc., and forming an AuSn
And brazing material such as AuSi.
【０１９５】以上、この発明について説明したが、ここ
で示した実施例はさまざまに変形可能である。今回開示
された実施例はすべての点で例示であって制限的なもの
ではないと考えられるべきである。本発明の範囲は上記
した説明ではなくて特許請求の範囲によって示され、特
許請求の範囲と均等の意味および範囲内でのすべての変
更が含まれることが意図される。Although the present invention has been described above, the embodiments shown here can be variously modified. The embodiments disclosed this time are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
【０１９６】[0196]
【発明の効果】この発明に従えば、ダイヤモンド薄膜層
と基板との密着性が高くさらに反りの少ないヒートシン
クを提供することができる。According to the present invention, it is possible to provide a heat sink having high adhesion between the diamond thin film layer and the substrate and less warpage.
【０１９７】この発明によれば、有毒なＢｅＯを用いな
いので製造上安全である。また薄い気相合成ダイヤモン
ド層を利用するので安価である上、放熱性に優れた半導
体モジュールを提供することができる。しかも、この半
導体モジュールは、放熱用基材とその上に設けた気相合
成ダイヤモンド層が半導体素子との熱膨張差を減縮して
素子内部の熱応力を緩和し、素子搭載時における半導体
素子の割れを防止することができる。According to the present invention, since toxic BeO is not used, the production is safe. Further, since a thin vapor-phase synthetic diamond layer is used, a semiconductor module which is inexpensive and has excellent heat dissipation can be provided. In addition, in this semiconductor module, the heat dissipation base material and the vapor-phase synthetic diamond layer provided thereon reduce the difference in thermal expansion between the semiconductor element and the semiconductor element, relieve the thermal stress inside the element, and reduce the temperature of the semiconductor element when the element is mounted. Cracks can be prevented.
【図１】この発明で用いたダイヤモンド気相合成用の熱
フィラメントＣＶＤ装置の模式図である。FIG. 1 is a schematic diagram of a hot filament CVD apparatus for vapor phase synthesis of diamond used in the present invention.
【図２】酸に浸す前の基板にＸ線を照射して得られるＸ
線回折チャートである。FIG. 2 shows X obtained by irradiating a substrate before immersion in an acid with X-rays.
It is a line diffraction chart.
【図３】酸に浸す前の基板内のＣｕとＷとＣとの濃度を
示すグラフである。FIG. 3 is a graph showing the concentrations of Cu, W and C in a substrate before immersion in an acid.
【図４】酸に浸した後であってダイヤモンド薄膜層を形
成する前の基板内部のＣｕとＷとＣとの濃度を示すグラ
フである。FIG. 4 is a graph showing the concentrations of Cu, W, and C inside a substrate after being immersed in an acid and before forming a diamond thin film layer.
【図５】ダイヤモンド薄膜層を形成した後にダイヤモン
ド薄膜層にＸ線を照射して得られるＸ線回折チャートで
ある。FIG. 5 is an X-ray diffraction chart obtained by irradiating the diamond thin film layer with X-rays after forming the diamond thin film layer.
【図６】ダイヤモンド薄膜層を形成した後の基板とダイ
ヤモンド薄膜層内のＣｕとＷとＣとの濃度を示すグラフ
である。FIG. 6 is a graph showing the concentrations of Cu, W and C in a substrate and a diamond thin film layer after a diamond thin film layer is formed.
【図７】この発明で用いたダイヤモンド気相合成用のマ
イクロ波プラズマＣＶＤ装置の模式図である。FIG. 7 is a schematic diagram of a microwave plasma CVD apparatus for diamond vapor phase synthesis used in the present invention.
【図８】実施例３で得られたダイヤモンド薄膜層にＸ線
を照射して得られるＸ線回折チャートである。FIG. 8 is an X-ray diffraction chart obtained by irradiating the diamond thin film layer obtained in Example 3 with X-rays.
【図９】実施例３で得られたサンプルのある部分につい
ての走査型電子顕微鏡写真である。FIG. 9 is a scanning electron micrograph of a portion of the sample obtained in Example 3.
【図１０】実施例３で得られたサンプルの別の部分につ
いての走査型電子顕微鏡写真である。FIG. 10 is a scanning electron micrograph of another part of the sample obtained in Example 3.
【図１１】実施例１１に従って酸処理を施した基板のあ
る部分についての走査型電子顕微鏡写真である。FIG. 11 is a scanning electron micrograph of a portion of a substrate that has been subjected to an acid treatment according to Example 11.
【図１２】実施例１１に従って酸処理をした基板の別の
部分についての走査型電子顕微鏡写真である。FIG. 12 is a scanning electron micrograph of another portion of the substrate that has been acid-treated according to Example 11.
【図１３】実施例１５に従って酸処理された後の基板に
ついてのＸ線回折チャートである。FIG. 13 is an X-ray diffraction chart of a substrate after being subjected to an acid treatment according to Example 15.
【図１４】比較例３に従って酸処理された後の基板のＸ
線回折チャートである。FIG. 14 shows the X of the substrate after acid treatment according to Comparative Example 3.
It is a line diffraction chart.
【図１５】この発明の実施例１に従ったヒートシンクの
製造工程を示すステップ図である。FIG. 15 is a step diagram illustrating a manufacturing process of the heat sink according to the first embodiment of the present invention.
【図１６】この発明の実施例１に従って製造されたダイ
ヤモンド薄膜層の模式図である。FIG. 16 is a schematic view of a diamond thin film layer manufactured according to the first embodiment of the present invention.
【図１７】この発明の実施例２に従って製造された、中
間層上に形成されたダイヤモンド薄膜層を示す模式図で
ある。FIG. 17 is a schematic diagram showing a diamond thin film layer formed on an intermediate layer, manufactured according to Embodiment 2 of the present invention.
【図１８】この発明に従ったヒートシンクの製造方法の
第１工程を示す模式図である。FIG. 18 is a schematic view showing a first step of the method for manufacturing a heat sink according to the present invention.
【図１９】この発明に従ったヒートシンクの製造方法の
第２工程を示す模式図である。FIG. 19 is a schematic view showing a second step of the method for manufacturing a heat sink according to the present invention.
【図２０】この発明に従ったヒートシンクの製造方法の
第３工程を示す模式図である。FIG. 20 is a schematic view showing a third step of the method for manufacturing a heat sink according to the present invention.
【図２１】この発明の実施例１９による半導体モジュー
ルを示す概略の断面図である。FIG. 21 is a schematic sectional view showing a semiconductor module according to Embodiment 19 of the present invention;
【図２２】この発明の実施例２０による半導体モジュー
ルを示す概略の断面図である。FIG. 22 is a schematic sectional view showing a semiconductor module according to Embodiment 20 of the present invention.
２６ 基板 ３１，２２０ ダイヤモンド薄膜層 ３２ 中間層 ３１０ 基板母材 ３１１ 空孔 ３１２ 銅 26 substrate 31, 220 diamond thin film layer 32 intermediate layer 310 substrate base material 311 vacancy 312 copper
───────────────────────────────────────────────────── フロントページの続き (31)優先権主張番号 特願平10−216683 (32)優先日 平成10年７月31日(1998．7．31) (33)優先権主張国 日本（ＪＰ） (72)発明者 今井 貴浩 兵庫県伊丹市昆陽北一丁目１番１号 住友 電気工業株式会社伊丹製作所内 (72)発明者 目黒 貴一 兵庫県伊丹市昆陽北一丁目１番１号 住友 電気工業株式会社伊丹製作所内 Ｆターム(参考） 5F036 AA01 BB01 BB08 BD16 ──────────────────────────────────────────────────続 き Continued on front page (31) Priority claim number Japanese Patent Application No. 10-216683 (32) Priority date July 31, 1998 (July 31, 1998) (33) Priority claim country Japan (JP) (72) Inventor Takahiro Imai 1-1-1, Kunyokita, Itami-shi, Hyogo Sumitomo Electric Industries, Ltd.Itami Works (72) Inventor Kiichi Meguro 1-1-1, Kunyokita, Itami-shi, Hyogo Sumitomo Electric Industries Stock F term in the Itami Works (reference) 5F036 AA01 BB01 BB08 BD16
Claims (29)
備え、 前記基板内のＣｕの含有率は５重量％以上であり、 前記ダイヤモンド薄膜層にＸ線を照射して得られるＸ線
回折チャートにおいて、Ｗの（１１０）面の回折ピーク
強度がＣｕの（２００）面の回折ピーク強度の１００倍
以上である、ヒートシンク。1. A substrate comprising a sintered body containing Cu and W, and a diamond thin film layer formed on a surface of the substrate, wherein the content of Cu in the substrate is 5% by weight or more, A heat sink, wherein in a X-ray diffraction chart obtained by irradiating the diamond thin film layer with X-rays, the diffraction peak intensity of the (110) plane of W is at least 100 times the diffraction peak intensity of the (200) plane of Cu.
備え、 前記基板内のＣｕの含有率は５重量％以上であり、 前記ダイヤモンド薄膜層にＸ線を照射して得られるＸ線
回折チャートにおいて、Ｗの（２１１）面の回折ピーク
強度がＣｕの（２００）面の回折ピーク強度の３０倍以
上である、ヒートシンク。2. A substrate comprising a sintered body containing Cu and W, and a diamond thin film layer formed on a surface of the substrate, wherein the content of Cu in the substrate is 5% by weight or more; A heat sink, wherein in a X-ray diffraction chart obtained by irradiating the diamond thin film layer with X-rays, the diffraction peak intensity of the (211) plane of W is at least 30 times the diffraction peak intensity of the (200) plane of Cu.
て得られるＸ線回折チャートにおいて、ＷＣのピークが
現われる、請求項１または２に記載のヒートシンク。3. The heat sink according to claim 1, wherein a peak of WC appears in an X-ray diffraction chart obtained by irradiating the diamond thin film layer with X-rays.
と、 前記基板の表面上に形成されたダイヤモンド薄膜層とを
備え、 前記基板内のＣｕの含有率は５重量％以上であり、 前記基板内でのＣｕの含有率は前記基板の表面に近づく
につれて小さくなる、ヒートシンク。4. A substrate comprising Cu and a metal having a low coefficient of thermal expansion, and a diamond thin film layer formed on a surface of the substrate, wherein the content of Cu in the substrate is 5% by weight or more; A heat sink, wherein the content of Cu in the substrate decreases as approaching the surface of the substrate.
下の部分のＣｕの含有率は、前記基板全体のＣｕの含有
率の５０％以下である、請求項４に記載のヒートシン
ク。5. The heat sink according to claim 4, wherein the Cu content of a portion having a depth of 10 μm or less from the surface of the substrate is 50% or less of the Cu content of the entire substrate.
Ｗ−Ｍｏ焼結体である、請求項１〜５のいずれか１項に
記載のヒートシンク。6. The substrate may be a Cu—W sintered body or Cu—
The heat sink according to any one of claims 1 to 5, which is a W-Mo sintered body.
り、そのＷ粒子の表面粗さＲZ は０．０５μｍ以上であ
る、請求項１〜６のいずれか１項に記載のヒートシン
ク。7. The heat sink according to claim 1, wherein W particles are exposed on the surface of the substrate, and the W particles have a surface roughness R Z of 0.05 μm or more. .
層との間にはＣｕの含有率がほぼ０重量％の中間層が形
成されている、請求項１〜７のいずれか１項に記載のヒ
ートシンク。8. The method according to claim 1, wherein an intermediate layer having a Cu content of approximately 0% by weight is formed between the surface of the substrate and the diamond thin film layer. heatsink.
００μｍ以下である、請求項１〜８のいずれか１項に記
載のヒートシンク。9. The substrate has a thickness of 200 μm or more and 100 or more.
The heat sink according to any one of claims 1 to 8, wherein the heat sink is not more than 00 µm.
μｍ以上である、請求項１〜９のいずれか１項に記載の
ヒートシンク。10. The thickness of the diamond thin film layer is 10
The heat sink according to any one of claims 1 to 9, which is not less than μm.
板の表面を酸に浸すことにより前記基板の表面層の部分
のＣｕの含有率を減少させるとともに、露出した低熱膨
張係数の金属の表面を粗面化する工程と、 前記酸処理後の前記基板の表面上に気相合成法によりダ
イヤモンド薄膜層を形成する工程とを備えた、ヒートシ
ンクの製造方法。11. The surface of a substrate containing Cu and a metal having a low coefficient of thermal expansion is immersed in an acid to reduce the content of Cu in a surface layer portion of the substrate and to expose the surface of the metal having a low coefficient of thermal expansion. And a step of forming a diamond thin film layer on the surface of the substrate after the acid treatment by a vapor phase synthesis method.
水素酸、過酸化水素およびクロム酸からなる群より選ば
れた溶液またはその混合溶液である、請求項１１に記載
のヒートシンクの製造方法。12. The method according to claim 11, wherein the acid is a solution selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, hydrogen peroxide and chromic acid, or a mixed solution thereof. Method.
率を減少させる工程は、前記基板の表面を特定の酸に浸
す第１酸処理工程と、前記第１酸処理後の基板を前記特
定の酸とは異なる酸に浸す第２酸処理工程とを含む、請
求項１１または１２に記載のヒートシンクの製造方法。13. The step of reducing the content of Cu in a portion of the surface layer of the substrate includes: a first acid treatment step of immersing the surface of the substrate in a specific acid; The method for manufacturing a heat sink according to claim 11 or 12, further comprising a second acid treatment step of immersing in a different acid from the specific acid.
ｕ−Ｗ−Ｍｏ焼結体からなる群より選ばれた少なくとも
１種の焼結体である、請求項１１〜１３のいずれか１項
に記載のヒートシンクの製造方法。14. The substrate comprises a Cu—W sintered body and C
The method for manufacturing a heat sink according to any one of claims 11 to 13, wherein the method is at least one type of sintered body selected from the group consisting of uW-Mo sintered bodies.
子が露出しており、前記Ｗ粒子の表面粗さＲZ は０．０
５μｍ以上である、請求項１１〜１４のいずれか１項に
記載のヒートシンクの製造方法。15. W particles are exposed on the surface of the substrate immersed in an acid, and the W particles have a surface roughness R Z of 0.0
The method for manufacturing a heat sink according to claim 11, wherein the heat sink has a thickness of 5 μm or more.
は、前記基板の表面にＸ線を照射して得られるＸ線回折
チャートにおいて、Ｃｕのピークが検出されないように
なるまで行なう、請求項１１〜１５のいずれか１項に記
載のヒートシンクの製造方法。16. The method according to claim 16, wherein the acid treatment for reducing the Cu content is performed until an X-ray diffraction chart obtained by irradiating the surface of the substrate with an X-ray does not detect a Cu peak. A method for manufacturing a heat sink according to any one of claims 11 to 15.
は、前記基板の表面からの深さが３０μｍ以内の部分で
の空孔率が５体積％以上７０体積％以下となり、かつ前
記基板の表面からの深さが３０μｍ以内の部分でのＣｕ
の含有率が前記基板全体のＣｕの含有率の５０％以下に
なるまで行なう、請求項１１〜１６のいずれか１項に記
載のヒートシンクの製造方法。17. The acid treatment for reducing the Cu content, wherein the porosity at a portion within a depth of 30 μm from the surface of the substrate becomes 5% by volume or more and 70% by volume or less, and Cu at a depth of 30 μm or less from the surface
17. The method of manufacturing a heat sink according to claim 11, wherein the method is performed until the content of Cu becomes 50% or less of the content of Cu in the entire substrate.
ち、ダイヤモンドを用いて前記基板の表面に傷付け処理
を行なう工程を備えた、請求項１１〜１７のいずれか１
項に記載のヒートシンクの製造方法。18. The method according to claim 11, further comprising, prior to forming the diamond thin film layer, performing a process of damaging the surface of the substrate using diamond.
Item 13. The method for manufacturing a heat sink according to item 1.
ヤモンド薄膜層とを備えたヒートシンクであって、 前記基板は、 低熱膨張係数の多孔質材料からなる基板母材と、 前記基板母材の空孔に充填されたＣｕとを含み、 前記基板母材の表面層では、空孔に前記ダイヤモンド薄
膜層が入り込んでいる、ヒートシンク。19. A heat sink comprising: a substrate; and a diamond thin film layer formed on the substrate, wherein the substrate comprises a substrate preform made of a porous material having a low coefficient of thermal expansion; A heat sink, comprising: Cu filled in holes, wherein the diamond thin-film layer enters holes in the surface layer of the substrate base material.
Ｋ以上であり、かつ厚さは２００μｍ以上７００μｍ以
下であり、前記ダイヤモンド薄膜層の厚さは１０μｍ以
上２００μｍ以下である、請求項１〜１０または１９の
いずれか１項に記載のヒートシンク。20. The thermal conductivity of the substrate is 100 W / m ·
The heat sink according to any one of claims 1 to 10 or 19, wherein the thickness is not less than K, the thickness is not less than 200 m and not more than 700 m, and the thickness of the diamond thin film layer is not less than 10 m and not more than 200 m.
１０００Ｗ／ｍ・Ｋ以上である、請求項２０に記載のヒ
ートシンク。21. The heat sink according to claim 20, wherein the thermal conductivity of the diamond thin film layer is 1000 W / m · K or more.
板母材の表面上にダイヤモンド薄膜層を形成する工程
と、 前記ダイヤモンド薄膜層の形成後に、前記基板母材の空
孔にＣｕを充填する工程とを備えた、ヒートシンクの製
造方法。22. A step of forming a diamond thin film layer on the surface of a substrate base material made of a porous material having a low coefficient of thermal expansion, and after forming the diamond thin film layer, filling holes in the substrate base material with Cu. And a method for manufacturing a heat sink.
Ｍｏ焼結体からなる群より選ばれた少なくとも１種の焼
結体である、請求項２２に記載のヒートシンクの製造方
法。23. The substrate base material is a W sintered body and W-
The method for manufacturing a heat sink according to claim 22, wherein the method is at least one type of sintered body selected from the group consisting of Mo sintered bodies.
上６０体積％以下である、請求項２２または２３のいず
れか１項に記載のヒートシンクの製造方法。24. The method for manufacturing a heat sink according to claim 22, wherein the porosity of the substrate base material is not less than 15% by volume and not more than 60% by volume.
程は、溶融した銅を前記基板母材の空孔内に浸入させる
ことを含む、請求項２２〜２４のいずれか１項に記載の
ヒートシンクの製造方法。25. The method according to claim 22, wherein the step of filling the holes of the substrate preform with copper includes injecting molten copper into the holes of the substrate preform. A method for manufacturing the heat sink as described above.
程は、固体の銅の上に前記基板母材を載置した後、銅を
加熱して溶融させて溶融した銅を空孔に浸入させること
を含む、請求項２２〜２４のいずれか１項に記載のヒー
トシンクの製造方法。26. The step of filling the holes of the substrate base material with copper comprises placing the substrate base material on solid copper, and then heating and melting the copper to form the molten copper holes. The method for manufacturing a heat sink according to any one of claims 22 to 24, comprising infiltrating the heat sink.
程は、前記ダイヤモンド薄膜層が形成された前記基板母
材上に固体の銅を載置した後、銅を加熱して溶融させて
溶融した銅を空孔に浸入させることを含む、請求項２２
〜２４のいずれか１項に記載のヒートシンクの製造方
法。27. The step of filling the holes of the substrate base material with copper comprises placing solid copper on the substrate base material on which the diamond thin film layer is formed, and then heating and melting the copper. 23. Infiltrating the molten copper into the pores.
25. The method for manufacturing a heat sink according to any one of items 24 to 24.
程は、容器内に銅の溶湯を蓄え、前記ダイヤモンド薄膜
層が形成された前記基板母材を銅の溶湯に浸すことによ
り、溶融した銅を空孔に浸入させることを含む、請求項
２２〜２４のいずれか１項に記載のヒートシンクの製造
方法。28. The step of filling the holes of the substrate base material with copper includes: storing a copper melt in a container; and immersing the substrate base material on which the diamond thin film layer is formed in the copper melt. The method for manufacturing a heat sink according to any one of claims 22 to 24, comprising infiltrating molten copper into the holes.
ち、前記基板母材の表面にダイヤモンドを用いて傷つけ
処理を行なう工程を備える、請求項２２〜２８のいずれ
か１項に記載のヒートシンクの製造方法。29. The method for manufacturing a heat sink according to claim 22, further comprising, prior to forming the diamond thin film layer, performing a process of damaging the surface of the substrate base material using diamond. .
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37639598A JP4623774B2 (en) | 1998-01-16 | 1998-12-22 | Heat sink and manufacturing method thereof |
| US09/232,011 US6361857B1 (en) | 1998-01-16 | 1999-01-14 | Heatsink and fabrication method thereof |
| EP20040005284 EP1424729B1 (en) | 1998-01-16 | 1999-01-15 | Heatsink |
| EP19990300277 EP0930649B1 (en) | 1998-01-16 | 1999-01-15 | Heatsink and fabrication method thereof |
| DE1999636672 DE69936672T2 (en) | 1998-01-16 | 1999-01-15 | Heat sink and its manufacture |
| DE69943006T DE69943006D1 (en) | 1998-01-16 | 1999-01-15 | heatsink |
| US09/962,578 US6641861B2 (en) | 1998-01-16 | 2001-09-24 | Heatsink and fabrication method thereof |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP623898 | 1998-01-16 | ||
| JP23018798 | 1998-07-31 | ||
| JP10-230187 | 1998-07-31 | ||
| JP10-230194 | 1998-07-31 | ||
| JP10-6238 | 1998-07-31 | ||
| JP10-216683 | 1998-07-31 | ||
| JP21668398 | 1998-07-31 | ||
| JP23019498 | 1998-07-31 | ||
| JP37639598A JP4623774B2 (en) | 1998-01-16 | 1998-12-22 | Heat sink and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000106413A true JP2000106413A (en) | 2000-04-11 |
| JP4623774B2 JP4623774B2 (en) | 2011-02-02 |
Family
ID=27518688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP37639598A Expired - Fee Related JP4623774B2 (en) | 1998-01-16 | 1998-12-22 | Heat sink and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6361857B1 (en) |
| EP (2) | EP1424729B1 (en) |
| JP (1) | JP4623774B2 (en) |
| DE (2) | DE69936672T2 (en) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10039596C2 (en) * | 2000-08-12 | 2003-03-27 | Omg Ag & Co Kg | Supported metal membrane, process for its manufacture and use |
| US6749931B1 (en) * | 2000-11-01 | 2004-06-15 | P1 Diamond, Inc. | Diamond foam material and method for forming same |
| US6815052B2 (en) * | 2000-12-01 | 2004-11-09 | P1 Diamond, Inc. | Filled diamond foam material and method for forming same |
| JP4815065B2 (en) * | 2001-05-30 | 2011-11-16 | 株式会社トクヤマ | Heat sink and manufacturing method thereof |
| EP1452614B1 (en) * | 2001-11-09 | 2017-12-27 | Sumitomo Electric Industries, Ltd. | Sintered diamond having high thermal conductivity |
| AU2003284065A1 (en) | 2002-10-11 | 2005-05-05 | Chien-Min Sung | Carbonaceous heat spreader and associated methods |
| US20060113546A1 (en) * | 2002-10-11 | 2006-06-01 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
| US20050189647A1 (en) * | 2002-10-11 | 2005-09-01 | Chien-Min Sung | Carbonaceous composite heat spreader and associated methods |
| US7173334B2 (en) | 2002-10-11 | 2007-02-06 | Chien-Min Sung | Diamond composite heat spreader and associated methods |
| US7332402B2 (en) * | 2002-10-18 | 2008-02-19 | Finisar Corporation | Method for optically trimming electronic components |
| US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
| US7866343B2 (en) | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
| US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
| US7866342B2 (en) | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
| GB2404009B (en) * | 2003-07-17 | 2005-06-15 | Enfis Ltd | Cooling method and apparatus |
| US7019394B2 (en) * | 2003-09-30 | 2006-03-28 | Intel Corporation | Circuit package and method of plating the same |
| JP4860695B2 (en) * | 2006-06-07 | 2012-01-25 | 富士通株式会社 | Semiconductor package |
| CA2619547C (en) | 2007-02-06 | 2016-05-17 | Smith International, Inc. | Polycrystalline diamond constructions having improved thermal stability |
| US7942219B2 (en) | 2007-03-21 | 2011-05-17 | Smith International, Inc. | Polycrystalline diamond constructions having improved thermal stability |
| US20080298021A1 (en) * | 2007-05-31 | 2008-12-04 | Ali Ihab A | Notebook computer with hybrid diamond heat spreader |
| US7791188B2 (en) | 2007-06-18 | 2010-09-07 | Chien-Min Sung | Heat spreader having single layer of diamond particles and associated methods |
| US9297211B2 (en) | 2007-12-17 | 2016-03-29 | Smith International, Inc. | Polycrystalline diamond construction with controlled gradient metal content |
| CN102099541B (en) * | 2008-07-17 | 2015-06-17 | 史密斯运输股份有限公司 | Methods of forming polycrystalline diamond cutters and cutting element |
| JP5484111B2 (en) * | 2010-02-08 | 2014-05-07 | 株式会社アライドマテリアル | Semiconductor element mounting member, manufacturing method thereof, and semiconductor device |
| US9006086B2 (en) | 2010-09-21 | 2015-04-14 | Chien-Min Sung | Stress regulated semiconductor devices and associated methods |
| US8778784B2 (en) | 2010-09-21 | 2014-07-15 | Ritedia Corporation | Stress regulated semiconductor devices and associated methods |
| WO2012040373A2 (en) | 2010-09-21 | 2012-03-29 | Ritedia Corporation | Diamond particle mololayer heat spreaders and associated methods |
| US20120288698A1 (en) * | 2011-03-23 | 2012-11-15 | Advanced Diamond Technology, Inc | Method of fabrication, device structure and submount comprising diamond on metal substrate for thermal dissipation |
| KR101252669B1 (en) * | 2012-07-02 | 2013-04-09 | 한국과학기술연구원 | Method and apparatus for rapid growth of diamond film |
| US20210363016A1 (en) * | 2015-02-09 | 2021-11-25 | Saeed Alhassan Alkhazraji | Process for Manufacturing a Pure Porous 3D Diamond |
| US10494713B2 (en) * | 2015-04-16 | 2019-12-03 | Ii-Vi Incorporated | Method of forming an optically-finished thin diamond film, diamond substrate, or diamond window of high aspect ratio |
| US10692685B2 (en) | 2016-06-30 | 2020-06-23 | General Electric Company | Multi-layer X-ray source target |
| US10475619B2 (en) | 2016-06-30 | 2019-11-12 | General Electric Company | Multilayer X-ray source target |
| CN111742405A (en) * | 2017-12-19 | 2020-10-02 | 松下知识产权经营株式会社 | Diamond coating composite material radiator for high-power laser system |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4233344A (en) * | 1978-07-20 | 1980-11-11 | Learonal, Inc. | Method of improving the adhesion of electroless metal deposits employing colloidal copper activator |
| JPS5921032A (en) * | 1982-07-26 | 1984-02-02 | Sumitomo Electric Ind Ltd | Substrate for semiconductor device |
| JPS5946050A (en) * | 1982-09-09 | 1984-03-15 | Narumi China Corp | Ceramic package for semiconductor |
| US5299214A (en) | 1991-07-01 | 1994-03-29 | Sumitomo Electric Industries, Ltd. | Heat radiating component and semiconductor device provided with the same |
| JPH05326767A (en) | 1992-03-19 | 1993-12-10 | Sumitomo Electric Ind Ltd | Heat dissipating board |
| US5309457A (en) * | 1992-12-22 | 1994-05-03 | Minch Richard B | Micro-heatpipe cooled laser diode array |
| US5349602A (en) * | 1993-03-15 | 1994-09-20 | Sdl, Inc. | Broad-area MOPA device with leaky waveguide beam expander |
| US5324987A (en) | 1993-04-14 | 1994-06-28 | General Electric Company | Electronic apparatus with improved thermal expansion match |
| US5413751A (en) * | 1993-04-14 | 1995-05-09 | Frank J. Polese | Method for making heat-dissipating elements for micro-electronic devices |
| US5886407A (en) * | 1993-04-14 | 1999-03-23 | Frank J. Polese | Heat-dissipating package for microcircuit devices |
| EP0717125A1 (en) | 1994-12-15 | 1996-06-19 | General Electric Company | Bonding of diamond to a substrate |
| WO1997005757A1 (en) * | 1995-07-31 | 1997-02-13 | Crystalline Materials Corporation | Diamond electronic packages featuring bonded metal |
| US6114048A (en) * | 1998-09-04 | 2000-09-05 | Brush Wellman, Inc. | Functionally graded metal substrates and process for making same |
-
1998
- 1998-12-22 JP JP37639598A patent/JP4623774B2/en not_active Expired - Fee Related
-
1999
- 1999-01-14 US US09/232,011 patent/US6361857B1/en not_active Expired - Fee Related
- 1999-01-15 DE DE1999636672 patent/DE69936672T2/en not_active Expired - Lifetime
- 1999-01-15 EP EP20040005284 patent/EP1424729B1/en not_active Expired - Lifetime
- 1999-01-15 DE DE69943006T patent/DE69943006D1/en not_active Expired - Lifetime
- 1999-01-15 EP EP19990300277 patent/EP0930649B1/en not_active Expired - Lifetime
-
2001
- 2001-09-24 US US09/962,578 patent/US6641861B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0930649B1 (en) | 2007-08-01 |
| DE69936672T2 (en) | 2008-04-30 |
| JP4623774B2 (en) | 2011-02-02 |
| EP0930649A3 (en) | 2000-08-23 |
| EP0930649A2 (en) | 1999-07-21 |
| US20020037412A1 (en) | 2002-03-28 |
| EP1424729B1 (en) | 2010-12-01 |
| EP1424729A3 (en) | 2005-06-01 |
| DE69943006D1 (en) | 2011-01-13 |
| US6641861B2 (en) | 2003-11-04 |
| DE69936672D1 (en) | 2007-09-13 |
| EP1424729A2 (en) | 2004-06-02 |
| US6361857B1 (en) | 2002-03-26 |
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