JP2000071374A5 - - Google Patents
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- Publication number
- JP2000071374A5 JP2000071374A5 JP1998242663A JP24266398A JP2000071374A5 JP 2000071374 A5 JP2000071374 A5 JP 2000071374A5 JP 1998242663 A JP1998242663 A JP 1998242663A JP 24266398 A JP24266398 A JP 24266398A JP 2000071374 A5 JP2000071374 A5 JP 2000071374A5
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- indium oxide
- conductive film
- indium
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PJXISJQVUVHSOJ-UHFFFAOYSA-N Indium(III) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- -1 indium tin Chemical compound 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Description
透明導電膜層は、酸化インジウムを主成分とする層から形成されるが、抵抗率の低下、膜質改善等を考慮すると、錫を3〜50重量%含有してもよい。また、通常、膜厚は10〜100nmが好ましい。膜厚は表面抵抗率及び可視光線透過率に影響するため、要求される表面抵抗率と可視光線透過率を勘案して、上記範囲において最適な厚みとすることが好ましい。透明導電膜層の成膜方法としては、真空蒸着法、スパッタリング法、イオンプレーティング法等の公知技術のいずれも採用できる。これらの内、DCマグネトロンスパッタリング法が好ましい。透明導電膜層を形成するターゲットとしては、酸化インジウム、錫を含有した酸化インジウム、金属インジウム、インジウム錫合金等が挙げられる。 The transparent conductive film layer is formed of a layer containing indium oxide as a main component, but may contain 3 to 50% by weight of tin in consideration of a decrease in resistivity, an improvement in film quality, and the like. Also, usually, the film thickness is preferably 10 to 100 nm. Since the film thickness affects the surface resistivity and the visible light transmittance, it is preferable to set an optimum thickness in the above range in consideration of the required surface resistivity and the visible light transmittance. As a film-forming method of a transparent conductive film layer, any of well-known techniques, such as a vacuum evaporation method, sputtering method, an ion plating method, are employable. Among these, DC magnetron sputtering is preferred. As a target for forming a transparent conductive film layer , indium oxide, indium oxide containing tin, metallic indium, an indium tin alloy and the like can be mentioned.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24266398A JP3856357B2 (en) | 1998-08-28 | 1998-08-28 | Transparent conductive laminate and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24266398A JP3856357B2 (en) | 1998-08-28 | 1998-08-28 | Transparent conductive laminate and method for producing the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000071374A JP2000071374A (en) | 2000-03-07 |
JP2000071374A5 true JP2000071374A5 (en) | 2005-06-09 |
JP3856357B2 JP3856357B2 (en) | 2006-12-13 |
Family
ID=17092401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24266398A Expired - Fee Related JP3856357B2 (en) | 1998-08-28 | 1998-08-28 | Transparent conductive laminate and method for producing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3856357B2 (en) |
-
1998
- 1998-08-28 JP JP24266398A patent/JP3856357B2/en not_active Expired - Fee Related
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