JP2000049427A - Joined body and circuit board using the same - Google Patents
Joined body and circuit board using the sameInfo
- Publication number
- JP2000049427A JP2000049427A JP10210707A JP21070798A JP2000049427A JP 2000049427 A JP2000049427 A JP 2000049427A JP 10210707 A JP10210707 A JP 10210707A JP 21070798 A JP21070798 A JP 21070798A JP 2000049427 A JP2000049427 A JP 2000049427A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride substrate
- circuit board
- metal
- joined body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Ceramic Products (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、窒化ケイ素基板に
金属回路、又は金属回路と金属放熱板とが形成されてな
る高強度・高信頼性の回路基板とそれを製造するに好適
な接合体に関するものであり、回路基板の量産化を目的
とするものである。本発明の回路基板は、電子部品のパ
ワーモジュール等の組立に好適なものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-strength and high-reliability circuit board comprising a silicon nitride substrate on which a metal circuit or a metal circuit and a metal radiator plate are formed, and a joined body suitable for manufacturing the same. And for mass production of circuit boards. The circuit board of the present invention is suitable for assembling a power module or the like of electronic components.
【０００２】[0002]
【従来の技術】電子機器の小型化、多機能化、多様化に
より、パワーモジュール等の用途範囲は広範囲に及び、
過酷な条件での利用も増加してきている。これに伴い、
パワーモジュール用高熱伝導性絶縁性回路基板にはより
高い信頼性求められるようになった。これに応えるた
め、高強度・高熱伝導性の窒化ケイ素基板を構成要素と
する回路基板が開発され、実用化されている。2. Description of the Related Art Due to the miniaturization, multifunctionality, and diversification of electronic devices, the application range of power modules and the like has been widened.
Usage in harsh conditions is also increasing. Along with this,
High reliability has been required for high thermal conductive insulating circuit boards for power modules. In order to respond to this, a circuit board including a silicon nitride substrate having high strength and high thermal conductivity as a component has been developed and put into practical use.
【０００３】窒化ケイ素基板を構成要素とする回路基板
は、窒化ケイ素基板に活性金属ろう付け法や直接接合法
等により金属板を接合し、それをエッチングして所定パ
ターンの金属回路を形成させることによって製造されて
いる。また、金属回路を形成させた反対面には金属放熱
板を形成させた構造のものもある。A circuit board having a silicon nitride substrate as a component is formed by bonding a metal plate to a silicon nitride substrate by an active metal brazing method, a direct bonding method, or the like, and etching the metal plate to form a metal circuit having a predetermined pattern. It is manufactured by. There is also a structure in which a metal radiator plate is formed on the opposite surface on which a metal circuit is formed.
【０００４】[0004]
【発明が解決しようとする課題】これによって、所定パ
ターンの金属回路を有する窒化ケイ素回路基板の製造が
可能となった。しかし、上記方法は、窒化ケイ素基板の
単個毎に金属板の接合とエッチングを行って製造される
ため、量産化の点で問題であった。そこで、銅−アルミ
ナ回路基板で実用化されているような多数個取り法、す
なわち分割溝を有するアルミナ基板に銅板を接合し、そ
れをエッチングして所定パターンの銅回路を形成させ、
次いで分割溝に沿って分割する技術をそのまま採用して
も、窒化ケイ素基板はアルミナ基板に比べて、強度、靭
性が高いので、分割溝からずれて割れる部分があり、量
産化を実現することが困難であった。As a result, it has become possible to manufacture a silicon nitride circuit board having a predetermined pattern of metal circuits. However, since the above method is manufactured by bonding and etching a metal plate for each silicon nitride substrate, there is a problem in mass production. Therefore, a copper-alumina circuit board, such as a multi-piece method, which is in practical use, that is, a copper plate is bonded to an alumina substrate having a dividing groove, and a copper circuit having a predetermined pattern is formed by etching the copper plate.
Next, even if the technology of dividing along the dividing groove is adopted as it is, the silicon nitride substrate has higher strength and toughness than the alumina substrate, so there is a part that is displaced from the dividing groove and can be mass-produced. It was difficult.
【０００５】本発明は、上記に鑑みてなされたものであ
り、その目的は従来単個毎にしか製造することができな
かった窒化ケイ素回路基板を量産化することである。[0005] The present invention has been made in view of the above, and an object of the present invention is to mass-produce silicon nitride circuit boards, which conventionally could only be manufactured individually.
【０００６】[0006]
【課題を解決するための手段】すなわち、本発明は、以
下を要旨とするものである。 （請求項１）分割溝底部における窒化ケイ素基板の肉厚
が０．２〜０．５ｍｍである分割溝を有する窒化ケイ素
基板と、金属板とが接合されてなることを特徴とする接
合体。 （請求項２）窒化ケイ素基板が、分割溝の施されたグリ
ーン成形体の焼結体からなることを特徴とする請求項１
記載の接合体。 （請求項３）窒化ケイ素基板が、窒化ケイ素焼結体にレ
ーザー加工によって分割溝が施こされたものであること
を特徴とする請求項１記載の接合体。 （請求項４）金属板表面、又はメッキの施された金属板
のメッキ表面に、半田レジストパターンが形成されてな
ることを特徴とする請求項１、２又は３記載の接合体。 （請求項５）請求項１、２又は３記載の接合体の金属板
は所定パターンの金属回路からなり、しかも分割溝に沿
って分割されてなることを特徴とする回路基板。 （請求項６）請求項４記載の接合体の金属板は所定パタ
ーンの金属回路からなり、しかも分割溝に沿って分割さ
れてなることを特徴とする回路基板。That is, the present invention provides the following. (1) A bonded body comprising: a silicon nitride substrate having a dividing groove having a thickness of 0.2 to 0.5 mm at the bottom of the dividing groove; and a metal plate. (2) The silicon nitride substrate is made of a sintered body of a green compact having a dividing groove.
The conjugate of the above. (Claim 3) The joined body according to claim 1, wherein the silicon nitride substrate is obtained by subjecting a silicon nitride sintered body to division grooves by laser processing. (4) The joined body according to (1), (2) or (3), wherein a solder resist pattern is formed on a surface of the metal plate or a plated surface of the plated metal plate. (5) A circuit board according to the above (1), (2) or (3), wherein the metal plate of the joined body is formed of a metal circuit having a predetermined pattern and is divided along a dividing groove. (6) A circuit board according to the above (4), wherein the metal plate of the joined body is made of a metal circuit having a predetermined pattern and is divided along a dividing groove.
【０００７】[0007]
【発明実施の形態】以下、更に詳しく本発明を説明する
と、本発明で使用される窒化ケイ素基板は、より高い機
械的強度に対する信頼性に応えるため、３点曲げ強度が
５００ＭＰａ以上の抗折強度と、ＩＦ法（ＪＩＳ Ｒ
１６０７）による破壊靭性値が５．５ＭＰａｍ1/2以上
の強靱性を有することが好ましく、更には熱伝導率が６
０Ｗ／ｍＫ以上の高熱伝導性であることが好ましい。窒
化ケイ素基板の厚みとしては、０．５〜１．０ｍｍ程度
が一般的である。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in more detail. The silicon nitride substrate used in the present invention has a three-point bending strength of 500 MPa or more in order to meet the reliability for higher mechanical strength. And the IF method (JIS R
It is preferable that the material has a toughness having a fracture toughness value of 5.5 MPam 1/2 or more according to 1607) and a thermal conductivity of 6 MPa or more.
It is preferable to have high thermal conductivity of 0 W / mK or more. The thickness of the silicon nitride substrate is generally about 0.5 to 1.0 mm.
【０００８】このような窒化ケイ素基板は、窒化ケイ素
粉末とアルミナ、マグネシア、イットリア等の焼結助剤
とバインダ−とを含む混合物をグリーン成形体に成形
し、脱脂・焼結を行って窒化ケイ素焼結体となし、それ
を加工することによって製造することができる。窒化ケ
イ素基板の表面性状は重要であり、微少な欠陥や窪み等
は、金属板との接合時の接触面積に大きな影響を与える
ため、平滑であることが望ましく、ホーニング処理や機
械加工等によって研磨処理が行われていることが望まし
い。Such a silicon nitride substrate is formed by molding a mixture containing silicon nitride powder, a sintering aid such as alumina, magnesia, and yttria and a binder into a green molded body, followed by degreasing and sintering. It can be manufactured by forming a sintered body and processing it. The surface properties of the silicon nitride substrate are important, and fine defects and dents have a large effect on the contact area when joining with the metal plate, so it is desirable that the surface be smooth, and it should be polished by honing or machining. It is desirable that processing has been performed.
【０００９】本発明において、分割溝の施こされた窒化
ケイ素基板とするには、焼結時の収縮を考慮して所定寸
法の分割溝をグリーン成形体に形成した後、脱脂・焼結
する方法、窒化ケイ素焼結体に所定寸法の分割溝をレー
ザー加工もしくは高水圧加工によって直接形成する方法
が採用される。前者によれば、工程が単純化され更なる
量産化が可能となり、また後者によれば、より精密な寸
法精度での分割が可能となる利点があり、回路基板の用
途によっていずれかの方法が選択される。In the present invention, in order to obtain a silicon nitride substrate provided with a dividing groove, a dividing groove having a predetermined size is formed in a green compact in consideration of shrinkage during sintering, and then degreased and sintered. A method is employed in which a dividing groove having a predetermined size is directly formed on a silicon nitride sintered body by laser processing or high water pressure processing. According to the former, the process is simplified and further mass production is possible.Also, according to the latter, there is an advantage that division with more precise dimensional accuracy is possible. Selected.
【００１０】窒化ケイ素基板に施される分割溝の形状は
任意であるが、通常は、表面幅が１００μｍ程度で、断
面形状がＶ字状又は凹状である。本発明においては、分
割溝底部における窒化ケイ素基板の肉厚が重要であり、
０．２〜０．５ｍｍとする。これによって、分割溝に沿
って不都合なく分割することが可能となる。すなわち、
分割溝底部の肉厚が０．５ｍｍより厚いと、分割溝をは
ずれて分割され、所定のモジュールに組み込みが不可能
な不良品となることがある。また、分割溝底部の肉厚が
０．２ｍｍ未満であると、グリーン成形体に分割溝を形
成する方法では脱脂・焼結時に窒化ケイ素基板が割れる
ことがあり、また窒化ケイ素焼結体に分割溝を直接形成
する方法においては、これまた作業中に分割溝からそれ
て割れが発生したり、更には窒化ケイ素基板の表裏全面
にろう材を塗布する方法を採用した場合に、分割溝内に
入り込んだろう材成分を除去することが困難となる。The shape of the dividing groove formed on the silicon nitride substrate is arbitrary, but usually the surface width is about 100 μm and the sectional shape is V-shaped or concave. In the present invention, the thickness of the silicon nitride substrate at the bottom of the dividing groove is important,
0.2 to 0.5 mm. Thereby, it becomes possible to divide without any trouble along the division groove. That is,
If the thickness of the bottom of the division groove is larger than 0.5 mm, the division may be performed with the division groove deviated, resulting in a defective product that cannot be incorporated into a predetermined module. If the thickness of the bottom of the dividing groove is less than 0.2 mm, the method of forming the dividing groove in the green compact may crack the silicon nitride substrate during degreasing and sintering. In the method of forming grooves directly, cracks may be generated from the dividing grooves during the operation, or when the brazing material is applied to the entire front and back surfaces of the silicon nitride substrate, It becomes difficult to remove the brazing material component that has entered.
【００１１】本発明において、分割溝は、窒化ケイ素基
板の一方の面に形成させてもよく、また表裏両面に形成
させてもよい。分割溝を窒化ケイ素基板の一方の面にし
か施さない場合には、その面には金属回路又は放熱金属
板のいずれかを形成させることになるが、金属回路を形
成させることが望ましい。In the present invention, the dividing groove may be formed on one surface of the silicon nitride substrate, or may be formed on both front and back surfaces. When the dividing groove is formed only on one surface of the silicon nitride substrate, either a metal circuit or a heat-dissipating metal plate is formed on that surface, but it is desirable to form a metal circuit.
【００１２】本発明で使用される金属板としては、銅、
ニッケル、アルミニウム、モリブデン等の金属から選ば
れる少なくとも１種の金属単板、上記金属の２種以上か
らなる積層板、もしくは上記金属の２種以上からなる合
金板であるが、窒化ケイ素基板に接合されているときの
形態は、通常、積層構造もしくは合金構造をとってい
る。金属回路の厚みは０．３〜０．５ｍｍ程度、また放
熱側の金属の厚みは０．１〜０．３ｍｍ程度であること
が好ましい。The metal plate used in the present invention includes copper,
At least one kind of metal plate selected from metals such as nickel, aluminum and molybdenum, a laminated plate made of two or more kinds of the above metals, or an alloy plate made of two or more kinds of the above metals, which are bonded to a silicon nitride substrate. In this case, the structure usually takes a laminated structure or an alloy structure. The thickness of the metal circuit is preferably about 0.3 to 0.5 mm, and the thickness of the metal on the heat dissipation side is preferably about 0.1 to 0.3 mm.
【００１３】本発明の接合体は、上記分割溝の施された
窒化ケイ素基板上及び／又は上記金属板上にろう材ペー
ストを全面もしくは所定のパターンに塗布した後、ろう
材ペーストの塗布面を接面させて金属板を窒化ケイ素基
板に配置し、熱処理することによって製造することがで
きる。本発明の接合体においては、金属板は窒化ケイ素
基板の一方の面にしか接合されていない構造であっても
よいし、また少なくとも表裏両面に接合された構造であ
ってもよい。接合の熱処理は、真空度１×１０ -5〜１×
１０-6Ｔｏｒｒの高真空中、温度８００〜８４０℃程度
で行われる。[0013] The joined body of the present invention has the above-mentioned divided groove.
Brazing filler metal on a silicon nitride substrate and / or on the metal plate
After applying the strike on the entire surface or in a predetermined pattern,
The metal plate is made of silicon nitride based
It can be manufactured by placing it on a plate and heat treating it.
Wear. In the joined body of the present invention, the metal plate is made of silicon nitride.
Even if the structure is bonded only to one side of the substrate
Good, and at least a structure joined to both sides
You may. The heat treatment for bonding is 1 × 10 vacuum -Five~ 1 ×
10-6Torr high vacuum, temperature around 800-840 ° C
Done in
【００１４】ここで用いられるろう材ペーストの金属成
分は、Ａｇ成分とＣｕ成分を主成分とし、溶融時の窒化
ケイ素基板との濡れ性を確保するために、活性金属を副
成分とする。この活性金属成分は、窒化ケイ素基板と反
応して酸化物や窒化物を生成させ、それらの生成物がろ
う材と窒化ケイ素基板との結合を強固なものにする。活
性金属の具体例をあげれば、Ｔｉ、Ｚｒ、Ｈｆ、Ｎｂ、
Ｔａ、Ｖやこれらの化合物である。これらの重量比率と
しては、Ａｇ８０〜９５部とＣｕ２０〜５部の合計量１
００部あたり活性金属１〜７部である。The metal component of the brazing material paste used here is mainly composed of an Ag component and a Cu component, and an active metal is a secondary component in order to ensure wettability with the silicon nitride substrate during melting. The active metal component reacts with the silicon nitride substrate to form oxides and nitrides, and these products strengthen the bond between the brazing material and the silicon nitride substrate. Specific examples of the active metal include Ti, Zr, Hf, Nb,
Ta, V and these compounds. The weight ratio of these was 1 to 80 parts of Ag and 20 to 5 parts of Cu.
1 to 7 parts of active metal per 00 parts.
【００１５】ろう材ペーストは、上記ろう材の金属成分
に有機溶剤及び必要に応じて有機結合剤を加え、ロー
ル、ニーダ、万能混合機、らいかい機等で混合すること
によって調製することができる。有機溶剤としては、メ
チルセルソルブ、テルピネオール、イソホロン、トルエ
ン等、また有機結合剤としては、エチルセルロース、メ
チルセルロース、ポリメタクリレート等が使用される。The brazing material paste can be prepared by adding an organic solvent and, if necessary, an organic binder to the metal component of the brazing material, and mixing the resulting mixture with a roll, a kneader, a universal mixer, a grinder, or the like. . Examples of the organic solvent include methylcellosolve, terpineol, isophorone, and toluene, and examples of the organic binder include ethylcellulose, methylcellulose, and polymethacrylate.
【００１６】このようにして得られた接合体の金属板上
に所定の金属回路パターンのエッチングレジストを塗布
すると共に、また金属回路の反対面に放熱金属板を形成
させる構造のものにおいては、その反対面の金属板上に
も所定の放熱金属板パターンのエッチングレジストを塗
布する。その後、塩化第二鉄溶液、塩化第二銅溶液等の
エッチング溶液で金属を溶解し、また分割溝上の金属部
分を除くことによって、更には塩酸、硫酸、過酸化水素
水、ハロゲン化フッ素化合物等のろう材除去液によって
短絡の原因となる不要な接合層除去することによって、
分割溝で区画された複数個の回路基板を備えた基板が製
造される。この基板に、折り曲げ等の小さな外力を付加
すると分割溝に沿って単一の回路基板が切り離され、複
数個の回路基板が製造される。In a structure in which an etching resist of a predetermined metal circuit pattern is applied on the metal plate of the joined body thus obtained, and a heat-dissipating metal plate is formed on the opposite surface of the metal circuit, An etching resist having a predetermined heat radiation metal plate pattern is also applied on the metal plate on the opposite surface. Thereafter, the metal is dissolved with an etching solution such as a ferric chloride solution or a cupric chloride solution, and by removing the metal portion on the dividing groove, further, hydrochloric acid, sulfuric acid, hydrogen peroxide, a halogenated fluorine compound, etc. By removing the unnecessary bonding layer that causes a short circuit with the brazing material removal liquid,
A substrate having a plurality of circuit boards partitioned by the dividing grooves is manufactured. When a small external force such as bending is applied to this board, a single circuit board is cut along the dividing groove, and a plurality of circuit boards are manufactured.
【００１７】本発明においては、単一の回路基板に切り
離される前の基板において、金属回路及び／又は金属放
熱板には、ニッケル、金等のメッキを施すことができ
る。更には、これらのメッキの施されたあるいは施され
ていない金属回路及び／又は金属放熱板の表面には、半
田レジストをパターン印刷し、それを紫外線や加熱等に
より硬化させ、所定の半田レジストパターンを形成させ
ることもできる。これらの措置によって、工程処理数が
低減し、更なる量産化が可能となる。In the present invention, the metal circuit and / or the metal radiator plate of the substrate before being cut into a single circuit substrate can be plated with nickel, gold, or the like. Further, a pattern of a solder resist is printed on the surface of the metal circuit and / or the metal heat radiating plate on which the plating is applied or not, and the solder resist is cured by ultraviolet light, heating, or the like, and a predetermined solder resist pattern is formed. Can also be formed. With these measures, the number of process steps is reduced, and further mass production becomes possible.
【００１８】特に、半田レジストパターンを分割前の基
板に形成させておくことによって、従来の金属回路中に
スリットを設けて半田流を防止する方式と比べて飛躍的
に強度特性が改善される。しかも、この半田レジストパ
ターンの形成には、多くの労力を有することから、単一
の回路基板にそれを形成させる場合よりも、大幅な労力
の低減が可能となる。In particular, by forming a solder resist pattern on a substrate before division, the strength characteristics are remarkably improved as compared with a conventional method in which a slit is provided in a metal circuit to prevent a solder flow. In addition, since the formation of the solder resist pattern requires a lot of labor, the labor can be significantly reduced as compared with a case where the solder resist pattern is formed on a single circuit board.
【００１９】半田レジストには、半導体チップ、電極端
子等を半田付けする際の所定位置以外への半田の流れ出
しと、それに伴う半導体チップ等の搭載位置ズレを防止
する効果がある。従って、本発明で使用される半田レジ
ストは、半導体チップ等の形状、サイズに合わせ、太さ
１．０ｍｍ程度にしてチップ搭載位置の周囲を囲むよう
に塗布することが望ましい。The solder resist has an effect of preventing the flow of solder to a position other than a predetermined position when soldering a semiconductor chip, an electrode terminal, and the like, and a displacement of a mounting position of the semiconductor chip and the like due to the flow. Therefore, it is desirable that the solder resist used in the present invention is applied so as to surround the periphery of the chip mounting position with a thickness of about 1.0 mm according to the shape and size of the semiconductor chip and the like.
【００２０】[0020]
【実施例】以下、実施例、比較例をあげて更に具体的に
本発明を説明する。The present invention will be described more specifically with reference to examples and comparative examples.
【００２１】実施例１ 窒化ケイ素粉末に、焼結助剤としてマグネシアとイット
リアをそれぞれ３％と５％を内割り添加し、バインダー
としてメチルセルロース、水を加えてスラリーを調合し
た。これをシート成形した後、所定のサイズに切り出し
てグリーン成形体を成形し、空気中、５００℃で脱脂を
行い、続いて窒素雰囲気中、１８５０℃、４時間焼結を
行なって、６０×３０×０．６３５ｍｍの窒化ケイ素焼
結体（熱伝導率６８Ｗ／ｍ・Ｋ、３点曲げ強度６５０Ｍ
Ｐａ以上、ＩＦ法による破壊靭性値５．７ＭＰａ
ｍ1/2）を製造した。この窒化ケイ素焼結体の片面に、
断面がＶ字状、表面幅が９５μｍ、分割溝底部における
窒化ケイ素基板の肉厚が０．４ｍｍである分割溝の４本
をＹＡＧレーザーにより施した。Example 1 Magnesia and yttria as sintering aids were respectively added to silicon nitride powder at 3% and 5%, respectively, and methyl cellulose and water were added as binders to prepare a slurry. After forming this into a sheet, it is cut into a predetermined size to form a green molded body, degreased in air at 500 ° C., and then sintered at 1850 ° C. for 4 hours in a nitrogen atmosphere to obtain 60 × 30 × 0.635 mm silicon nitride sintered body (thermal conductivity 68 W / m · K, three-point bending strength 650 M
Pa or more, fracture toughness by IF method 5.7 MPa
m 1/2 ). On one side of this silicon nitride sintered body,
Four division grooves having a V-shaped cross section, a surface width of 95 μm, and a silicon nitride substrate thickness of 0.4 mm at the bottom of the division grooves were applied by a YAG laser.
【００２２】この窒化ケイ素基板の分割溝を施した面に
は、分割溝を避けてパターン状にろう材ペースト（金属
成分は、Ａｇ８０％、Ｃｕ１５％、Ｔｉ５％）を塗布
し、各区画された部分には、パターン率２０％にして、
厚み０．３ｍｍの銅板を配置すると共に、分割溝の施さ
れていない裏面には全面にろう材ペースト塗布してから
厚み０．１５ｍｍのベタ銅板を配置し、真空中、９００
℃で熱処理してそれらを接合した。On the surface of the silicon nitride substrate on which the dividing grooves have been formed, a brazing material paste (metal component: Ag 80%, Cu 15%, Ti 5%) is applied in a pattern avoiding the dividing grooves, and divided into sections. For the part, make the pattern rate 20%,
A copper plate having a thickness of 0.3 mm is arranged, and a brazing material paste is applied to the entire back surface on which no dividing grooves are formed, and then a solid copper plate having a thickness of 0.15 mm is arranged.
They were joined by heat treatment at ℃.
【００２３】次いで、裏面のベタ銅板をエッチングして
放熱銅板を形成させるべく、分割溝に対応した裏面の仮
想分割線より１ｍｍ離してエッチングレジストを塗布
し、塩化第二鉄溶液からなるエッチング溶液、及び過酸
化水素水とフッ化アンモニウムの混合溶液からなるろう
材除去液でエッチングを行い、不要な銅板部分と不要な
ろう材（接合層）部分を除去した。この操作によって、
分割溝によって４個の回路基板に区画され、しかも各区
画された部分にはパターン率２０％の銅回路とその反対
面には放熱銅板を有する基板が製造された。Next, in order to form a heat-dissipating copper plate by etching the solid copper plate on the back surface, an etching resist is applied at a distance of 1 mm from a virtual dividing line on the back surface corresponding to the dividing groove, and an etching solution comprising a ferric chloride solution is applied. Etching was performed with a brazing filler metal removal solution composed of a mixed solution of aqueous hydrogen peroxide and ammonium fluoride to remove unnecessary copper plate portions and unnecessary brazing filler metal (joining layer) portions. By this operation,
Four circuit boards were divided by the dividing grooves, and a copper circuit having a pattern ratio of 20% was formed in each of the divided portions, and a substrate having a heat-dissipating copper plate on the opposite surface was manufactured.
【００２４】次いで、それぞれの銅回路と放熱銅板にＮ
ｉメッキを施してから、人手により分割溝に沿って力を
加えたところ、分割は分割溝に沿って行われ、４個の回
路基板が製造された。得られた回路基板には割れ等がな
く良好なものであった。Next, N is applied to each copper circuit and heat dissipation copper plate.
After the i-plating, a force was manually applied along the dividing groove, and the division was performed along the dividing groove, and four circuit boards were manufactured. The obtained circuit board was good without cracks or the like.
【００２５】実施例２ 分割溝底部における窒化ケイ素基板の肉厚を０．３ｍｍ
にしたこと以外は実施例１と同様にして回路基板を製造
したところ、実施例１とほぼ同等の好結果が得られた。Example 2 The thickness of the silicon nitride substrate at the bottom of the dividing groove was 0.3 mm.
When a circuit board was manufactured in the same manner as in Example 1 except that the above conditions were adopted, good results almost equivalent to those in Example 1 were obtained.
【００２６】実施例３ 分割溝の形成を、金型に設けられたカッターを用いてグ
リーン成形体に形成し、それを脱脂・焼結して得られた
窒化ケイ素基板を用いたこと以外は実施例２と同様にし
て回路基板を製造した。その結果、実施例１とほぼ同等
の好結果が得られた。Example 3 A split groove was formed in a green molded body using a cutter provided in a mold, and a silicon nitride substrate obtained by degreasing and sintering the green molded body was used. A circuit board was manufactured in the same manner as in Example 2. As a result, almost the same good results as in Example 1 were obtained.
【００２７】実施例４ ろう材ペーストを分割溝を避けずに窒化ケイ素基板に塗
布したこと以外は実施例２と同様にして回路基板を製造
した。その結果、エッチング処理により、分割溝内に進
入した不要ろう材成分をも容易に除去された回路基板を
製造することができた。また、基板の分割性、分割後の
回路基板の割れ等は、実施例１とほぼ同等の好結果であ
った。Example 4 A circuit board was manufactured in the same manner as in Example 2 except that the brazing material paste was applied to the silicon nitride substrate without avoiding the dividing grooves. As a result, it was possible to manufacture a circuit board from which unnecessary brazing material components that entered the division grooves were easily removed by the etching process. In addition, the division performance of the substrate, cracking of the circuit substrate after the division, and the like were almost the same as those in Example 1.
【００２８】実施例５ 分割溝底部の窒化ケイ素基板の肉厚を０．４ｍｍとし、
しかも分割前にＮｉメッキを施した銅回路上に半田レジ
ストを所定のパターンに塗布した後、紫外線で硬化さ
せ、半田レジストパターンを形成させたこと以外は実施
例４と同様にして回路基板を製造した。その結果、分割
溝内に進入した不要ろう材の除去性、基板の分割性、回
路基板の割れ等は、実施例４とほぼ同等の好結果であっ
た。Example 5 The thickness of the silicon nitride substrate at the bottom of the dividing groove was 0.4 mm,
In addition, a circuit board was manufactured in the same manner as in Example 4 except that a solder resist was applied in a predetermined pattern on a Ni-plated copper circuit before being divided, and then cured with ultraviolet light to form a solder resist pattern. did. As a result, the removability of the unnecessary brazing material that had entered the dividing groove, the dividing property of the board, the cracking of the circuit board, and the like were almost as good as those of Example 4.
【００２９】実施例６ 厚み１．０ｍｍの窒化ケイ素基板を用い、分割溝底部に
おける窒化ケイ素基板の肉厚を０．４ｍｍとしたこと以
外は実施例４と同様にして回路基板を製造した。その結
果、分割溝内に進入した不要ろう材の除去性、基板の分
割性、回路基板の割れ等は、実施例４とほぼ同等の好結
果であった。Example 6 A circuit board was manufactured in the same manner as in Example 4 except that a silicon nitride substrate having a thickness of 1.0 mm was used and the thickness of the silicon nitride substrate at the bottom of the dividing groove was set to 0.4 mm. As a result, the removability of the unnecessary brazing material that had entered the dividing groove, the dividing property of the board, the cracking of the circuit board, and the like were almost as good as those of Example 4.
【００３０】比較例１ 分割溝底部における窒化ケイ素基板の肉厚を０．６ｍｍ
としたこと以外は実施例１と同様にして回路基板を製造
した。その結果、分割溝からそれて割れる部分があっ
た。Comparative Example 1 The thickness of the silicon nitride substrate at the bottom of the dividing groove was 0.6 mm.
A circuit board was manufactured in the same manner as in Example 1, except that As a result, there was a portion that was deviated from the dividing groove.
【００３１】比較例２ 分割溝底部における窒化ケイ素基板の肉厚を０．１ｍｍ
としたこと以外は実施例３と同様にして回路基板を製造
した。その結果、窒化ケイ素基板の脱脂中に分割溝から
割れた。Comparative Example 2 The thickness of the silicon nitride substrate at the bottom of the division groove was 0.1 mm.
A circuit board was manufactured in the same manner as in Example 3 except that the above conditions were satisfied. As a result, the silicon nitride substrate cracked from the dividing groove during degreasing.
【００３２】比較例３ 分割溝底部における窒化ケイ素基板の肉厚を０．１ｍｍ
としたこと以外は実施例４と同様にして回路基板を製造
した。その結果、エッチング後には分割溝内にろう材成
分が残留しており、再度エッチング処理が必要となっ
た。Comparative Example 3 The thickness of the silicon nitride substrate at the bottom of the division groove was 0.1 mm.
A circuit board was manufactured in the same manner as in Example 4 except for the above. As a result, after the etching, the brazing filler metal remained in the divided grooves, and the etching process was required again.
【００３３】比較例４ 厚み１．５ｍｍの窒化ケイ素基板を用い、分割溝底部に
おける窒化ケイ素基板の肉厚を０．６ｍｍとしたこと以
外は実施例４と同様にして回路基板を製造した。その結
果、分割時に分割溝からそれて割れた。Comparative Example 4 A circuit board was manufactured in the same manner as in Example 4 except that a silicon nitride substrate having a thickness of 1.5 mm was used and the thickness of the silicon nitride substrate at the bottom of the dividing groove was set to 0.6 mm. As a result, it was broken off from the dividing groove at the time of dividing.
【００３４】[0034]
【発明の効果】本発明によれば、高信頼性窒化ケイ素回
路基板の量産化が可能となった。According to the present invention, mass production of a highly reliable silicon nitride circuit board has become possible.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 辻村 好彦 福岡県大牟田市新開町１ 電気化学工業株 式会社大牟田工場内 (72)発明者 寺野 克典 福岡県大牟田市新開町１ 電気化学工業株 式会社大牟田工場内 Ｆターム(参考） 4G026 AA06 AB08 AC01 AD05 AF01 AG01 5E338 AA01 AA18 BB19 BB28 BB47 BB63 BB71 BB75 CC01 CC04 CD11 EE02 EE32 EE33 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Yoshihiko Tsujimura, Inventor 1 Shinkaicho, Omuta-shi, Fukuoka Denki Kagaku Kogyo Co., Ltd. Inside the Omuta Plant F-term in Omuta Factory (reference) 4G026 AA06 AB08 AC01 AD05 AF01 AG01 5E338 AA01 AA18 BB19 BB28 BB47 BB63 BB71 BB75 CC01 CC04 CD11 EE02 EE32 EE33
Claims (6)
厚が０．２〜０．５ｍｍである分割溝を有する窒化ケイ
素基板と、金属板とが接合されてなることを特徴とする
接合体。1. A joined body comprising a silicon nitride substrate having a dividing groove having a thickness of 0.2 to 0.5 mm at the bottom of the dividing groove and a metal plate.
リーン成形体の焼結体からなることを特徴とする請求項
１記載の接合体。2. The joined body according to claim 1, wherein the silicon nitride substrate is formed of a green compact sintered body having a divided groove.
レーザー加工によって分割溝が施こされたものであるこ
とを特徴とする請求項１記載の接合体。3. The joined body according to claim 1, wherein the silicon nitride substrate is formed by dividing a silicon nitride sintered body by laser processing.
板のメッキ表面に、半田レジストパターンが形成されて
なることを特徴とする請求項１、２又は３記載の接合
体。4. The joined body according to claim 1, wherein a solder resist pattern is formed on a surface of the metal plate or a plated surface of the plated metal plate.
板は所定パターンの金属回路からなり、しかも分割溝に
沿って分割されてなることを特徴とする回路基板。5. The circuit board according to claim 1, wherein the metal plate of the joined body is formed of a metal circuit having a predetermined pattern and is divided along a dividing groove.
ターンの金属回路からなり、しかも分割溝に沿って分割
されてなることを特徴とする回路基板。6. The circuit board according to claim 4, wherein the metal plate of the joined body is made of a metal circuit having a predetermined pattern and is divided along a dividing groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10210707A JP2000049427A (en) | 1998-07-27 | 1998-07-27 | Joined body and circuit board using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10210707A JP2000049427A (en) | 1998-07-27 | 1998-07-27 | Joined body and circuit board using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000049427A true JP2000049427A (en) | 2000-02-18 |
Family
ID=16593779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10210707A Pending JP2000049427A (en) | 1998-07-27 | 1998-07-27 | Joined body and circuit board using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000049427A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002176119A (en) * | 2000-12-06 | 2002-06-21 | Toshiba Corp | Silicon nitride substrate, silicon nitride circuit substrate using the same, and method of manufacturing the same |
| JP2003031731A (en) * | 2001-07-16 | 2003-01-31 | Toshiba Corp | Ceramic substrate, its manufacturing method, and ceramic circuit board |
| JP2007324301A (en) * | 2006-05-31 | 2007-12-13 | Denki Kagaku Kogyo Kk | Method for manufacturing nitride ceramics circuit board |
| US20210269368A1 (en) * | 2018-08-17 | 2021-09-02 | Zone Infinity Co., Ltd. | Method for manufacturing active metal-brazed nitride ceramic substrate with excellent joining strength |
-
1998
- 1998-07-27 JP JP10210707A patent/JP2000049427A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002176119A (en) * | 2000-12-06 | 2002-06-21 | Toshiba Corp | Silicon nitride substrate, silicon nitride circuit substrate using the same, and method of manufacturing the same |
| JP2003031731A (en) * | 2001-07-16 | 2003-01-31 | Toshiba Corp | Ceramic substrate, its manufacturing method, and ceramic circuit board |
| JP2007324301A (en) * | 2006-05-31 | 2007-12-13 | Denki Kagaku Kogyo Kk | Method for manufacturing nitride ceramics circuit board |
| US20210269368A1 (en) * | 2018-08-17 | 2021-09-02 | Zone Infinity Co., Ltd. | Method for manufacturing active metal-brazed nitride ceramic substrate with excellent joining strength |
| US11964919B2 (en) * | 2018-08-17 | 2024-04-23 | Zone Infinityco., Ltd. | Method for manufacturing active metal-brazed nitride ceramic substrate with excellent joining strength |
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