ITMI20050191A1 - Struttura di fet ad alette - Google Patents
Struttura di fet ad aletteInfo
- Publication number
- ITMI20050191A1 ITMI20050191A1 IT000191A ITMI20050191A ITMI20050191A1 IT MI20050191 A1 ITMI20050191 A1 IT MI20050191A1 IT 000191 A IT000191 A IT 000191A IT MI20050191 A ITMI20050191 A IT MI20050191A IT MI20050191 A1 ITMI20050191 A1 IT MI20050191A1
- Authority
- IT
- Italy
- Prior art keywords
- alets
- fet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
- H01L29/7854—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection with rounded corners
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0008598A KR100526889B1 (ko) | 2004-02-10 | 2004-02-10 | 핀 트랜지스터 구조 |
Publications (1)
Publication Number | Publication Date |
---|---|
ITMI20050191A1 true ITMI20050191A1 (it) | 2005-08-11 |
Family
ID=34825144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT000191A ITMI20050191A1 (it) | 2004-02-10 | 2005-02-10 | Struttura di fet ad alette |
Country Status (5)
Country | Link |
---|---|
US (1) | US7317230B2 (it) |
JP (1) | JP2005229101A (it) |
KR (1) | KR100526889B1 (it) |
CN (1) | CN100470837C (it) |
IT (1) | ITMI20050191A1 (it) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100577562B1 (ko) | 2004-02-05 | 2006-05-08 | 삼성전자주식회사 | 핀 트랜지스터 형성방법 및 그에 따른 구조 |
KR100612419B1 (ko) * | 2004-10-19 | 2006-08-16 | 삼성전자주식회사 | 핀 트랜지스터 및 평판 트랜지스터를 갖는 반도체 소자 및그 형성 방법 |
US20070102756A1 (en) * | 2005-11-10 | 2007-05-10 | Bohumil Lojek | FinFET transistor fabricated in bulk semiconducting material |
US7462538B2 (en) * | 2005-11-15 | 2008-12-09 | Infineon Technologies Ag | Methods of manufacturing multiple gate CMOS transistors having different gate dielectric materials |
KR100720510B1 (ko) * | 2005-11-18 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 반도체 소자의 트랜지스터 및 그 형성방법 |
CN1979894B (zh) * | 2005-12-05 | 2011-08-03 | 旺宏电子股份有限公司 | 存储单元、存储单元的制造方法与操作方法 |
US7402856B2 (en) * | 2005-12-09 | 2008-07-22 | Intel Corporation | Non-planar microelectronic device having isolation element to mitigate fringe effects and method to fabricate same |
KR100811259B1 (ko) * | 2005-12-16 | 2008-03-07 | 주식회사 하이닉스반도체 | 균일한 채널 도핑 프로파일을 갖는 핀-스텝형 트랜지스터의제조방법 |
US7531423B2 (en) * | 2005-12-22 | 2009-05-12 | International Business Machines Corporation | Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same |
KR100792384B1 (ko) * | 2005-12-27 | 2008-01-09 | 주식회사 하이닉스반도체 | 5 채널 핀 트랜지스터 및 그 제조 방법 |
JP2009535800A (ja) * | 2006-04-26 | 2009-10-01 | エヌエックスピー ビー ヴィ | 不揮発性メモリデバイス |
US7678648B2 (en) * | 2006-07-14 | 2010-03-16 | Micron Technology, Inc. | Subresolution silicon features and methods for forming the same |
KR100814391B1 (ko) * | 2006-10-10 | 2008-03-18 | 삼성전자주식회사 | 핀 트랜지스터를 포함하는 디램 장치의 구동 방법 및 디램장치 |
JP2008117838A (ja) * | 2006-11-01 | 2008-05-22 | Elpida Memory Inc | 半導体装置及びその製造方法 |
KR100823874B1 (ko) * | 2006-12-28 | 2008-04-21 | 경북대학교 산학협력단 | 낮은 누설전류를 갖는 고밀도 fin 전계효과트랜지스터및 그 제조 방법 |
DE102007010563A1 (de) * | 2007-02-22 | 2008-08-28 | IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik | Selektives Wachstum von polykristallinem siliziumhaltigen Halbleitermaterial auf siliziumhaltiger Halbleiteroberfläche |
US8735990B2 (en) * | 2007-02-28 | 2014-05-27 | International Business Machines Corporation | Radiation hardened FinFET |
US7667271B2 (en) * | 2007-04-27 | 2010-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field-effect transistors |
KR100857087B1 (ko) | 2007-05-02 | 2008-09-05 | 한국과학기술원 | 핀펫 구조의 디램 셀 트랜지스터 제조 방법 |
US8034317B2 (en) * | 2007-06-18 | 2011-10-11 | Heliovolt Corporation | Assemblies of anisotropic nanoparticles |
JP2009016368A (ja) | 2007-06-29 | 2009-01-22 | Ricoh Co Ltd | メモリーデバイス |
US7939889B2 (en) | 2007-10-16 | 2011-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing resistance in source and drain regions of FinFETs |
US8187948B2 (en) | 2008-02-18 | 2012-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid gap-fill approach for STI formation |
US8629488B2 (en) * | 2008-04-23 | 2014-01-14 | Semiconductor Components Industries, Llc | Method for manufacturing an energy storage device and structure therefor |
CN101577224B (zh) * | 2008-05-05 | 2011-07-06 | 中芯国际集成电路制造(北京)有限公司 | 栅氧化层形成方法 |
US7608495B1 (en) * | 2008-09-19 | 2009-10-27 | Micron Technology, Inc. | Transistor forming methods |
JP5714831B2 (ja) * | 2010-03-18 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN102222693B (zh) * | 2010-04-15 | 2015-03-25 | 中国科学院微电子研究所 | 一种FinFET器件及其制造方法 |
CN102136427A (zh) * | 2010-12-24 | 2011-07-27 | 苏州华芯微电子股份有限公司 | 有效的实现低阈值电压mos器件的方法 |
TWI570920B (zh) * | 2011-01-26 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8450792B2 (en) | 2011-04-08 | 2013-05-28 | International Business Machines Corporation | Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL) |
CN103187439B (zh) * | 2011-12-29 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法、cmos及其形成方法 |
US20130320453A1 (en) * | 2012-06-01 | 2013-12-05 | Abhijit Jayant Pethe | Area scaling on trigate transistors |
US9368596B2 (en) * | 2012-06-14 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a field effect transistor |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
KR101979637B1 (ko) | 2012-11-26 | 2019-08-28 | 삼성전자주식회사 | 반도체 소자 |
EP2775528B1 (en) * | 2013-03-05 | 2019-07-17 | IMEC vzw | Passivated III-V or Ge fin-shaped field effect transistor |
US9412847B2 (en) | 2013-03-11 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned passivation of active regions |
US8940558B2 (en) | 2013-03-15 | 2015-01-27 | International Business Machines Corporation | Techniques for quantifying fin-thickness variation in FINFET technology |
KR102065523B1 (ko) * | 2013-03-29 | 2020-01-13 | 인텔 코포레이션 | 연장된 리세스된 스페이서 및 소스/드레인 영역들을 갖는 트랜지스터 아키텍처 및 그 제조 방법 |
US9142474B2 (en) | 2013-10-07 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation structure of fin field effect transistor |
US9287262B2 (en) | 2013-10-10 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and faceted for fin field effect transistor |
KR102148336B1 (ko) * | 2013-11-26 | 2020-08-27 | 삼성전자주식회사 | 표면 처리 방법, 반도체 제조 방법 및 이에 의해 제조된 반도체 장치 |
US9508844B2 (en) * | 2014-01-06 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and formation thereof |
US9564445B2 (en) | 2014-01-20 | 2017-02-07 | International Business Machines Corporation | Dummy gate structure for electrical isolation of a fin DRAM |
US9570561B2 (en) * | 2014-02-13 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Modified channel position to suppress hot carrier injection in FinFETs |
KR102175767B1 (ko) * | 2014-05-02 | 2020-11-06 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터 형성 방법 및 집적 회로 소자 |
CN105448984B (zh) * | 2014-08-06 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | 一种FinFET及其制备方法 |
US9806154B2 (en) | 2015-01-20 | 2017-10-31 | Taiwan Semiconductor Manufacturing Company Ltd. | FinFET structure and method for manufacturing thereof |
US9911806B2 (en) * | 2015-05-22 | 2018-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Solvent-based oxidation on germanium and III-V compound semiconductor materials |
US9698225B2 (en) * | 2015-07-07 | 2017-07-04 | International Business Machines Corporation | Localized and self-aligned punch through stopper doping for finFET |
US9478542B1 (en) * | 2015-07-08 | 2016-10-25 | Broadcom Corporation | Multi-gate device with planar channel |
JP6339230B2 (ja) * | 2015-10-09 | 2018-06-06 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置 |
CN105244353B (zh) | 2015-11-05 | 2018-05-25 | 中国科学院微电子研究所 | 包括带电荷穿通阻止层以降低穿通的cmos器件及其制造方法 |
US9786505B2 (en) | 2015-12-30 | 2017-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET device using dummy fins for smooth profiling |
CN115831969A (zh) * | 2017-11-30 | 2023-03-21 | 英特尔公司 | 用于高级集成电路结构制造的鳍状物图案化 |
US10868119B2 (en) | 2018-06-20 | 2020-12-15 | equal1.labs Inc. | Semiconductor quantum structures using preferential tunneling through thin insulator layers |
US11423322B2 (en) | 2018-06-20 | 2022-08-23 | equal1.labs Inc. | Integrated quantum computer incorporating quantum core and associated classical control circuitry |
US10854738B2 (en) | 2018-06-20 | 2020-12-01 | equal1.labs Inc. | Semiconductor process for quantum structures with staircase active well |
US10873019B2 (en) | 2018-06-20 | 2020-12-22 | equal1.labs Inc. | Topological programmable scalable quantum computing machine utilizing chord line quasi unidimensional aperature tunneling semiconductor structures |
US10861940B2 (en) | 2018-06-20 | 2020-12-08 | equal1.labs Inc. | Semiconductor process for quantum structures with staircase active well incorporating shared gate control |
US11450760B2 (en) | 2018-06-20 | 2022-09-20 | equal1.labs Inc. | Quantum structures using aperture channel tunneling through depletion region |
US10903413B2 (en) | 2018-06-20 | 2021-01-26 | Equal!.Labs Inc. | Semiconductor process optimized for quantum structures |
US10793431B2 (en) | 2018-06-20 | 2020-10-06 | equal1.labs Inc. | Semiconductor controlled quantum annealing interaction gate |
US10845496B2 (en) | 2018-06-20 | 2020-11-24 | equal1.labs Inc. | Multistage semiconductor quantum detector circuit incorporating anticorrelation |
TR201917243A2 (tr) * | 2019-11-07 | 2021-05-21 | Tobb Ekonomi Ve Teknoloji Ueniversitesi | Hücreleri̇n eri̇şi̇m örüntüsüne göre uyarlanabi̇li̇r alttaş kutuplama (body bias) geri̇li̇mli̇ bi̇r di̇nami̇k rastgele eri̇şi̇m belleği̇ (dram) yapisi |
CN113690137B (zh) * | 2020-05-18 | 2023-05-26 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
US20220147314A1 (en) | 2020-11-12 | 2022-05-12 | equal1.labs Inc. | System and method of quantum stochastic rounding using silicon based quantum dot arrays |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0824169B2 (ja) * | 1989-05-10 | 1996-03-06 | 富士通株式会社 | 半導体記憶装置の製造方法 |
US5399960A (en) * | 1993-11-12 | 1995-03-21 | Cypress Semiconductor Corporation | Reference voltage generation method and apparatus |
JP3378414B2 (ja) * | 1994-09-14 | 2003-02-17 | 株式会社東芝 | 半導体装置 |
US5675164A (en) * | 1995-06-07 | 1997-10-07 | International Business Machines Corporation | High performance multi-mesa field effect transistor |
JPH09134591A (ja) * | 1995-11-07 | 1997-05-20 | Oki Micro Design Miyazaki:Kk | 半導体メモリ装置 |
JP2001067868A (ja) * | 1999-08-31 | 2001-03-16 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6252284B1 (en) * | 1999-12-09 | 2001-06-26 | International Business Machines Corporation | Planarized silicon fin device |
JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4044276B2 (ja) * | 2000-09-28 | 2008-02-06 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6800905B2 (en) * | 2001-12-14 | 2004-10-05 | International Business Machines Corporation | Implanted asymmetric doped polysilicon gate FinFET |
JP3605086B2 (ja) * | 2002-03-29 | 2004-12-22 | 株式会社東芝 | 電界効果トランジスタ |
US6642090B1 (en) * | 2002-06-03 | 2003-11-04 | International Business Machines Corporation | Fin FET devices from bulk semiconductor and method for forming |
US6830953B1 (en) * | 2002-09-17 | 2004-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Suppression of MOSFET gate leakage current |
US6885055B2 (en) * | 2003-02-04 | 2005-04-26 | Lee Jong-Ho | Double-gate FinFET device and fabricating method thereof |
JP4585510B2 (ja) * | 2003-03-07 | 2010-11-24 | 台湾積體電路製造股▲ふん▼有限公司 | シャロートレンチアイソレーションプロセス |
US7074656B2 (en) * | 2003-04-29 | 2006-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping of semiconductor fin devices |
US6765303B1 (en) * | 2003-05-06 | 2004-07-20 | Advanced Micro Devices, Inc. | FinFET-based SRAM cell |
JP4216676B2 (ja) * | 2003-09-08 | 2009-01-28 | 株式会社東芝 | 半導体装置 |
US7180102B2 (en) * | 2003-09-30 | 2007-02-20 | Agere Systems Inc. | Method and apparatus for using cobalt silicided polycrystalline silicon for a one time programmable non-volatile semiconductor memory |
US6969656B2 (en) * | 2003-12-05 | 2005-11-29 | Freescale Semiconductor, Inc. | Method and circuit for multiplying signals with a transistor having more than one independent gate structure |
-
2004
- 2004-02-10 KR KR10-2004-0008598A patent/KR100526889B1/ko active IP Right Grant
- 2004-12-22 JP JP2004372147A patent/JP2005229101A/ja active Pending
-
2005
- 2005-01-21 US US11/041,063 patent/US7317230B2/en active Active
- 2005-02-06 CN CNB2005100082337A patent/CN100470837C/zh not_active Expired - Fee Related
- 2005-02-10 IT IT000191A patent/ITMI20050191A1/it unknown
Also Published As
Publication number | Publication date |
---|---|
KR20050080549A (ko) | 2005-08-17 |
CN100470837C (zh) | 2009-03-18 |
US20050173768A1 (en) | 2005-08-11 |
KR100526889B1 (ko) | 2005-11-09 |
JP2005229101A (ja) | 2005-08-25 |
US7317230B2 (en) | 2008-01-08 |
CN1655365A (zh) | 2005-08-17 |
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ITMI20042290A1 (it) | Polimorfi di adapalene | |
UA12593S (uk) | Стела-цінник світива | |
ITVR20040121A1 (it) | Struttura di cancellata |