ITMI20042373A1 - Dispositivo elettronico di memoria con celle di memoria non-volatili ad alta densita' e con ridotta interferenza capacitiva fra le celle - Google Patents
Dispositivo elettronico di memoria con celle di memoria non-volatili ad alta densita' e con ridotta interferenza capacitiva fra le celleInfo
- Publication number
- ITMI20042373A1 ITMI20042373A1 IT002373A ITMI20042373A ITMI20042373A1 IT MI20042373 A1 ITMI20042373 A1 IT MI20042373A1 IT 002373 A IT002373 A IT 002373A IT MI20042373 A ITMI20042373 A IT MI20042373A IT MI20042373 A1 ITMI20042373 A1 IT MI20042373A1
- Authority
- IT
- Italy
- Prior art keywords
- cells
- high density
- memory device
- volatile memory
- reduced capacitive
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT002373A ITMI20042373A1 (it) | 2004-12-14 | 2004-12-14 | Dispositivo elettronico di memoria con celle di memoria non-volatili ad alta densita' e con ridotta interferenza capacitiva fra le celle |
US11/300,053 US7319604B2 (en) | 2004-12-14 | 2005-12-14 | Electronic memory device having high density non-volatile memory cells and a reduced capacitive interference cell-to-cell |
DE602005017461T DE602005017461D1 (de) | 2004-12-14 | 2005-12-14 | Elektronische Speichervorrichtung mit nichtflüchtigen Speicherzellen mit hoher Dichte und verringerter kapazitiver Zelle-zu-Zelle-Interferenz |
EP05027285A EP1672645B1 (en) | 2004-12-14 | 2005-12-14 | Electronic memory device having high density non volatile memory cells and a reduced capacitive interference cell-to-cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT002373A ITMI20042373A1 (it) | 2004-12-14 | 2004-12-14 | Dispositivo elettronico di memoria con celle di memoria non-volatili ad alta densita' e con ridotta interferenza capacitiva fra le celle |
Publications (1)
Publication Number | Publication Date |
---|---|
ITMI20042373A1 true ITMI20042373A1 (it) | 2005-03-14 |
Family
ID=35841936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT002373A ITMI20042373A1 (it) | 2004-12-14 | 2004-12-14 | Dispositivo elettronico di memoria con celle di memoria non-volatili ad alta densita' e con ridotta interferenza capacitiva fra le celle |
Country Status (4)
Country | Link |
---|---|
US (1) | US7319604B2 (it) |
EP (1) | EP1672645B1 (it) |
DE (1) | DE602005017461D1 (it) |
IT (1) | ITMI20042373A1 (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080157169A1 (en) * | 2006-12-28 | 2008-07-03 | Yuan Jack H | Shield plates for reduced field coupling in nonvolatile memory |
KR101669261B1 (ko) * | 2010-06-14 | 2016-10-25 | 삼성전자주식회사 | 수직 채널 트랜지스터를 구비한 반도체 소자 및 그 제조 방법 |
US20150070999A1 (en) * | 2013-09-11 | 2015-03-12 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5293328A (en) * | 1992-01-15 | 1994-03-08 | National Semiconductor Corporation | Electrically reprogrammable EPROM cell with merged transistor and optiumum area |
JP2003282745A (ja) * | 2002-03-26 | 2003-10-03 | Toshiba Corp | 半導体記憶装置 |
US6750504B2 (en) | 2002-04-24 | 2004-06-15 | Ememory Technology Inc. | Low voltage single-poly flash memory cell and array |
EP1435657A1 (en) | 2002-12-30 | 2004-07-07 | STMicroelectronics S.r.l. | Non-volatile memory cell and manufacturing process |
US7045849B2 (en) | 2003-05-21 | 2006-05-16 | Sandisk Corporation | Use of voids between elements in semiconductor structures for isolation |
-
2004
- 2004-12-14 IT IT002373A patent/ITMI20042373A1/it unknown
-
2005
- 2005-12-14 EP EP05027285A patent/EP1672645B1/en active Active
- 2005-12-14 DE DE602005017461T patent/DE602005017461D1/de active Active
- 2005-12-14 US US11/300,053 patent/US7319604B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7319604B2 (en) | 2008-01-15 |
EP1672645B1 (en) | 2009-11-04 |
EP1672645A1 (en) | 2006-06-21 |
DE602005017461D1 (de) | 2009-12-17 |
US20060158931A1 (en) | 2006-07-20 |
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