IT969828B - Struttura semiconduttride perfezionata - Google Patents
Struttura semiconduttride perfezionataInfo
- Publication number
- IT969828B IT969828B IT30834/72A IT3083472A IT969828B IT 969828 B IT969828 B IT 969828B IT 30834/72 A IT30834/72 A IT 30834/72A IT 3083472 A IT3083472 A IT 3083472A IT 969828 B IT969828 B IT 969828B
- Authority
- IT
- Italy
- Prior art keywords
- perfected
- semiconductive structure
- semiconductive
- perfected semiconductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20923771A | 1971-12-17 | 1971-12-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT969828B true IT969828B (it) | 1974-04-10 |
Family
ID=22777928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT30834/72A IT969828B (it) | 1971-12-17 | 1972-10-24 | Struttura semiconduttride perfezionata |
Country Status (7)
Country | Link |
---|---|
US (1) | US3787253A (it) |
JP (1) | JPS5113629B2 (it) |
CA (1) | CA993569A (it) |
DE (1) | DE2256447A1 (it) |
FR (1) | FR2163773B1 (it) |
GB (1) | GB1372607A (it) |
IT (1) | IT969828B (it) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
US3971059A (en) * | 1974-09-23 | 1976-07-20 | National Semiconductor Corporation | Complementary bipolar transistors having collector diffused isolation |
JPS5317081A (en) * | 1976-07-30 | 1978-02-16 | Sharp Corp | Production of i2l device |
US5087579A (en) * | 1987-05-28 | 1992-02-11 | Texas Instruments Incorporated | Method for fabricating an integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias |
US5156989A (en) * | 1988-11-08 | 1992-10-20 | Siliconix, Incorporated | Complementary, isolated DMOS IC technology |
JPH05102175A (ja) * | 1991-10-07 | 1993-04-23 | Sharp Corp | 半導体装置の製造方法 |
JPH05226347A (ja) * | 1991-11-12 | 1993-09-03 | Nec Corp | 半導体装置 |
JPH09330936A (ja) * | 1996-06-07 | 1997-12-22 | Mitsubishi Electric Corp | バイポーラ半導体装置及びその製造方法 |
KR0171128B1 (ko) * | 1995-04-21 | 1999-02-01 | 김우중 | 수직형 바이폴라 트랜지스터 |
KR100331296B1 (ko) * | 1995-12-20 | 2002-06-20 | 클라크 3세 존 엠. | 에피택셜 핀치 저항기 및 그 형성 방법 |
US7027893B2 (en) * | 2003-08-25 | 2006-04-11 | Ati Industrial Automation, Inc. | Robotic tool coupler rapid-connect bus |
US9048104B2 (en) * | 2010-07-12 | 2015-06-02 | Microchip Technology Inc. | Multi-chip package module and a doped polysilicon trench for isolation and connection |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3524113A (en) * | 1967-06-15 | 1970-08-11 | Ibm | Complementary pnp-npn transistors and fabrication method therefor |
US3596149A (en) * | 1967-08-16 | 1971-07-27 | Hitachi Ltd | Semiconductor integrated circuit with reduced minority carrier storage effect |
US3575741A (en) * | 1968-02-05 | 1971-04-20 | Bell Telephone Labor Inc | Method for producing semiconductor integrated circuit device and product produced thereby |
GB1226899A (it) * | 1968-07-17 | 1971-03-31 |
-
1971
- 1971-12-17 US US00209237A patent/US3787253A/en not_active Expired - Lifetime
-
1972
- 1972-10-18 GB GB4795172A patent/GB1372607A/en not_active Expired
- 1972-10-24 IT IT30834/72A patent/IT969828B/it active
- 1972-11-10 JP JP47112226A patent/JPS5113629B2/ja not_active Expired
- 1972-11-17 DE DE2256447A patent/DE2256447A1/de not_active Ceased
- 1972-12-12 FR FR7245559A patent/FR2163773B1/fr not_active Expired
- 1972-12-13 CA CA159,059A patent/CA993569A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2256447A1 (de) | 1973-06-20 |
FR2163773A1 (it) | 1973-07-27 |
GB1372607A (en) | 1974-10-30 |
FR2163773B1 (it) | 1976-06-04 |
US3787253A (en) | 1974-01-22 |
JPS5113629B2 (it) | 1976-05-01 |
CA993569A (en) | 1976-07-20 |
JPS4868187A (it) | 1973-09-17 |
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