IT942603B - Elemento memorizzatore elettronico - Google Patents
Elemento memorizzatore elettronicoInfo
- Publication number
- IT942603B IT942603B IT70044/71A IT7004471A IT942603B IT 942603 B IT942603 B IT 942603B IT 70044/71 A IT70044/71 A IT 70044/71A IT 7004471 A IT7004471 A IT 7004471A IT 942603 B IT942603 B IT 942603B
- Authority
- IT
- Italy
- Prior art keywords
- electronic
- memorizer
- memorizer element
- electronic memorizer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Secondary Cells (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2049658A DE2049658C3 (de) | 1970-10-09 | 1970-10-09 | Elektronisches Speicherelement |
Publications (1)
Publication Number | Publication Date |
---|---|
IT942603B true IT942603B (it) | 1973-04-02 |
Family
ID=5784649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT70044/71A IT942603B (it) | 1970-10-09 | 1971-09-14 | Elemento memorizzatore elettronico |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2049658C3 (it) |
FR (1) | FR2112279B1 (it) |
GB (1) | GB1319388A (it) |
IT (1) | IT942603B (it) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3813558A (en) * | 1972-06-26 | 1974-05-28 | Ibm | Directional, non-volatile bistable resistor logic circuits |
USRE40790E1 (en) * | 1992-06-23 | 2009-06-23 | Micron Technology, Inc. | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device |
US5229326A (en) * | 1992-06-23 | 1993-07-20 | Micron Technology, Inc. | Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device |
US5753947A (en) * | 1995-01-20 | 1998-05-19 | Micron Technology, Inc. | Very high-density DRAM cell structure and method for fabricating it |
US5879955A (en) | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US5751012A (en) * | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
US5789758A (en) * | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US5831276A (en) | 1995-06-07 | 1998-11-03 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
KR100253029B1 (ko) * | 1995-06-07 | 2000-04-15 | 로데릭 더블류 루이스 | 불휘발성 메모리 셀내에서 다중 상태의 물질을 이용하는 스택·트랜치형 다이오드 |
US5869843A (en) * | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US5837564A (en) * | 1995-11-01 | 1998-11-17 | Micron Technology, Inc. | Method for optimal crystallization to obtain high electrical performance from chalcogenides |
US6653733B1 (en) | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
US6025220A (en) | 1996-06-18 | 2000-02-15 | Micron Technology, Inc. | Method of forming a polysilicon diode and devices incorporating such diode |
US5789277A (en) | 1996-07-22 | 1998-08-04 | Micron Technology, Inc. | Method of making chalogenide memory device |
US6337266B1 (en) | 1996-07-22 | 2002-01-08 | Micron Technology, Inc. | Small electrode for chalcogenide memories |
US5985698A (en) * | 1996-07-22 | 1999-11-16 | Micron Technology, Inc. | Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell |
US5814527A (en) * | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
US5998244A (en) * | 1996-08-22 | 1999-12-07 | Micron Technology, Inc. | Memory cell incorporating a chalcogenide element and method of making same |
US5812441A (en) * | 1996-10-21 | 1998-09-22 | Micron Technology, Inc. | MOS diode for use in a non-volatile memory cell |
US6015977A (en) * | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
US5952671A (en) | 1997-05-09 | 1999-09-14 | Micron Technology, Inc. | Small electrode for a chalcogenide switching device and method for fabricating same |
US6087689A (en) * | 1997-06-16 | 2000-07-11 | Micron Technology, Inc. | Memory cell having a reduced active area and a memory array incorporating the same |
US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
US6563156B2 (en) * | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
US6440837B1 (en) | 2000-07-14 | 2002-08-27 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
-
1970
- 1970-10-09 DE DE2049658A patent/DE2049658C3/de not_active Expired
-
1971
- 1971-09-14 IT IT70044/71A patent/IT942603B/it active
- 1971-09-21 FR FR7133907A patent/FR2112279B1/fr not_active Expired
- 1971-10-07 GB GB4672871A patent/GB1319388A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2112279B1 (it) | 1974-05-10 |
FR2112279A1 (it) | 1972-06-16 |
DE2049658B2 (de) | 1975-01-16 |
DE2049658C3 (de) | 1975-08-28 |
GB1319388A (en) | 1973-06-06 |
DE2049658A1 (de) | 1972-04-13 |
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