IT7829669A0 - Processo perfezionato per la fabbricazione di transistori bipolari. - Google Patents
Processo perfezionato per la fabbricazione di transistori bipolari.Info
- Publication number
- IT7829669A0 IT7829669A0 IT7829669A IT2966978A IT7829669A0 IT 7829669 A0 IT7829669 A0 IT 7829669A0 IT 7829669 A IT7829669 A IT 7829669A IT 2966978 A IT2966978 A IT 2966978A IT 7829669 A0 IT7829669 A0 IT 7829669A0
- Authority
- IT
- Italy
- Prior art keywords
- bipolar transistors
- improved process
- manufacturing bipolar
- manufacturing
- transistors
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/6628—Inverse transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85586977A | 1977-11-30 | 1977-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7829669A0 true IT7829669A0 (it) | 1978-11-10 |
IT1160056B IT1160056B (it) | 1987-03-04 |
Family
ID=25322303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT29669/78A IT1160056B (it) | 1977-11-30 | 1978-11-10 | Processo perfezionato per la fabbricazione di transistori bipolari |
Country Status (6)
Country | Link |
---|---|
US (1) | US4326212A (it) |
EP (1) | EP0002191B1 (it) |
JP (1) | JPS5477076A (it) |
CA (1) | CA1116309A (it) |
DE (1) | DE2861291D1 (it) |
IT (1) | IT1160056B (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3274778D1 (en) * | 1981-05-11 | 1987-01-29 | Fairchild Camera Instr Co | Self-aligned lateral transistor and method of manufacture thereof |
US4546539A (en) * | 1982-12-08 | 1985-10-15 | Harris Corporation | I2 L Structure and fabrication process compatible with high voltage bipolar transistors |
JPH0785476B2 (ja) * | 1991-06-14 | 1995-09-13 | インターナショナル・ビジネス・マシーンズ・コーポレイション | エミッタ埋め込み型バイポーラ・トランジスタ構造 |
JP2002324846A (ja) * | 2001-04-25 | 2002-11-08 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
JP2008032663A (ja) * | 2006-08-01 | 2008-02-14 | Hironobu Ikeda | 腕時計 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2085407B1 (it) * | 1970-04-17 | 1974-06-14 | Radiotechnique Compelec | |
US3878551A (en) * | 1971-11-30 | 1975-04-15 | Texas Instruments Inc | Semiconductor integrated circuits having improved electrical isolation characteristics |
JPS5538823B2 (it) * | 1971-12-22 | 1980-10-07 | ||
GB1362345A (en) * | 1973-05-11 | 1974-08-07 | Mullard Ltd | Semiconductor device manufacture |
US3945857A (en) * | 1974-07-01 | 1976-03-23 | Fairchild Camera And Instrument Corporation | Method for fabricating double-diffused, lateral transistors |
US3993513A (en) * | 1974-10-29 | 1976-11-23 | Fairchild Camera And Instrument Corporation | Combined method for fabricating oxide-isolated vertical bipolar transistors and complementary oxide-isolated lateral bipolar transistors and the resulting structures |
JPS5615587B2 (it) * | 1974-12-27 | 1981-04-10 | ||
US4058419A (en) * | 1974-12-27 | 1977-11-15 | Tokyo Shibaura Electric, Co., Ltd. | Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques |
DE2507613C3 (de) * | 1975-02-21 | 1979-07-05 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines invers betriebenen Transistors |
JPS5232284A (en) * | 1975-09-05 | 1977-03-11 | Fujitsu Ltd | Manufacturing method of semiconductor device |
DE2554426C3 (de) * | 1975-12-03 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor |
-
1978
- 1978-10-04 CA CA000312701A patent/CA1116309A/en not_active Expired
- 1978-10-17 JP JP12694878A patent/JPS5477076A/ja active Pending
- 1978-11-02 EP EP78101288A patent/EP0002191B1/de not_active Expired
- 1978-11-02 DE DE7878101288T patent/DE2861291D1/de not_active Expired
- 1978-11-10 IT IT29669/78A patent/IT1160056B/it active
-
1979
- 1979-08-27 US US06/069,645 patent/US4326212A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
IT1160056B (it) | 1987-03-04 |
CA1116309A (en) | 1982-01-12 |
EP0002191B1 (de) | 1981-11-04 |
JPS5477076A (en) | 1979-06-20 |
EP0002191A1 (de) | 1979-06-13 |
US4326212A (en) | 1982-04-20 |
DE2861291D1 (en) | 1982-01-14 |
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