IT201900023475A1 - Transistore hemt includente regioni di field plate e relativo processo di fabbricazione - Google Patents

Transistore hemt includente regioni di field plate e relativo processo di fabbricazione

Info

Publication number
IT201900023475A1
IT201900023475A1 IT102019000023475A IT201900023475A IT201900023475A1 IT 201900023475 A1 IT201900023475 A1 IT 201900023475A1 IT 102019000023475 A IT102019000023475 A IT 102019000023475A IT 201900023475 A IT201900023475 A IT 201900023475A IT 201900023475 A1 IT201900023475 A1 IT 201900023475A1
Authority
IT
Italy
Prior art keywords
manufacturing process
field plate
transistor including
including field
related manufacturing
Prior art date
Application number
IT102019000023475A
Other languages
English (en)
Inventor
Ferdinando Iucolano
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102019000023475A priority Critical patent/IT201900023475A1/it
Priority to EP20211345.2A priority patent/EP3836228A1/en
Priority to US17/116,465 priority patent/US20210175350A1/en
Priority to CN202011451733.9A priority patent/CN112951908A/zh
Priority to CN202022963156.3U priority patent/CN214797426U/zh
Publication of IT201900023475A1 publication Critical patent/IT201900023475A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
IT102019000023475A 2019-12-10 2019-12-10 Transistore hemt includente regioni di field plate e relativo processo di fabbricazione IT201900023475A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT102019000023475A IT201900023475A1 (it) 2019-12-10 2019-12-10 Transistore hemt includente regioni di field plate e relativo processo di fabbricazione
EP20211345.2A EP3836228A1 (en) 2019-12-10 2020-12-02 Hemt transistor including field plate regions and manufacturing process thereof
US17/116,465 US20210175350A1 (en) 2019-12-10 2020-12-09 Hemt transistor including field plate regions and manufacturing process thereof
CN202011451733.9A CN112951908A (zh) 2019-12-10 2020-12-10 包括场板区域的hemt晶体管及其制造工艺
CN202022963156.3U CN214797426U (zh) 2019-12-10 2020-12-10 高电子迁移率晶体管和半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102019000023475A IT201900023475A1 (it) 2019-12-10 2019-12-10 Transistore hemt includente regioni di field plate e relativo processo di fabbricazione

Publications (1)

Publication Number Publication Date
IT201900023475A1 true IT201900023475A1 (it) 2021-06-10

Family

ID=69904088

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102019000023475A IT201900023475A1 (it) 2019-12-10 2019-12-10 Transistore hemt includente regioni di field plate e relativo processo di fabbricazione

Country Status (4)

Country Link
US (1) US20210175350A1 (it)
EP (1) EP3836228A1 (it)
CN (2) CN112951908A (it)
IT (1) IT201900023475A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4135010A4 (en) * 2020-05-13 2023-10-04 Nuvoton Technology Corporation Japan SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION
CN113436975B (zh) * 2021-08-27 2021-12-14 深圳市时代速信科技有限公司 一种半导体器件及制备方法
CN115732544A (zh) * 2021-08-30 2023-03-03 华为技术有限公司 一种场效应管、其制备方法及电子电路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170294530A1 (en) * 2016-04-07 2017-10-12 Semiconductor Components Industries, Llc Electronic device including a hemt with a segmented gate electrode and a process of forming the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1901342A4 (en) * 2005-06-10 2009-07-22 Nec Corp FIELD EFFECT TRANSISTOR
JP5649347B2 (ja) * 2010-07-20 2015-01-07 住友電工デバイス・イノベーション株式会社 半導体装置
US10644127B2 (en) * 2017-07-28 2020-05-05 Semiconductor Components Industries, Llc Process of forming an electronic device including a transistor structure
US20200168718A1 (en) 2018-11-28 2020-05-28 Stmicroelectronics S.R.L. Method for manufacturing an ohmic contact for a hemt device
IT201800011065A1 (it) 2018-12-13 2020-06-13 St Microelectronics Srl Transistore hemt includente una regione di porta perfezionata e relativo procedimento di fabbricazione

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170294530A1 (en) * 2016-04-07 2017-10-12 Semiconductor Components Industries, Llc Electronic device including a hemt with a segmented gate electrode and a process of forming the same

Also Published As

Publication number Publication date
CN112951908A (zh) 2021-06-11
CN214797426U (zh) 2021-11-19
EP3836228A1 (en) 2021-06-16
US20210175350A1 (en) 2021-06-10

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