IT1406644B1 - Substrato (fetta) di materiale semiconduttore con sovrastanti strati eteroepitassiali assumenti una struttura sandwich, idoneo per la fabbricazione di componenti elettronici ibridi. - Google Patents
Substrato (fetta) di materiale semiconduttore con sovrastanti strati eteroepitassiali assumenti una struttura sandwich, idoneo per la fabbricazione di componenti elettronici ibridi.Info
- Publication number
- IT1406644B1 IT1406644B1 ITCT2010A000006A ITCT20100006A IT1406644B1 IT 1406644 B1 IT1406644 B1 IT 1406644B1 IT CT2010A000006 A ITCT2010A000006 A IT CT2010A000006A IT CT20100006 A ITCT20100006 A IT CT20100006A IT 1406644 B1 IT1406644 B1 IT 1406644B1
- Authority
- IT
- Italy
- Prior art keywords
- heterophyptitial
- slice
- overhead
- manufacture
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITCT2010A000006A IT1406644B1 (it) | 2010-04-29 | 2010-04-29 | Substrato (fetta) di materiale semiconduttore con sovrastanti strati eteroepitassiali assumenti una struttura sandwich, idoneo per la fabbricazione di componenti elettronici ibridi. |
US13/695,246 US9099308B2 (en) | 2010-04-29 | 2011-04-29 | Semiconductor wafer and method for manufacturing the same |
CN201180028435.1A CN102939642B (zh) | 2010-04-29 | 2011-04-29 | 半导体晶片及其制造方法 |
PCT/EP2011/056817 WO2011135065A1 (en) | 2010-04-29 | 2011-04-29 | Semiconductor wafer and method for manufacturing the same |
US14/788,699 US9576793B2 (en) | 2010-04-29 | 2015-06-30 | Semiconductor wafer and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITCT2010A000006A IT1406644B1 (it) | 2010-04-29 | 2010-04-29 | Substrato (fetta) di materiale semiconduttore con sovrastanti strati eteroepitassiali assumenti una struttura sandwich, idoneo per la fabbricazione di componenti elettronici ibridi. |
Publications (2)
Publication Number | Publication Date |
---|---|
ITCT20100006A1 ITCT20100006A1 (it) | 2011-10-30 |
IT1406644B1 true IT1406644B1 (it) | 2014-03-07 |
Family
ID=42751951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITCT2010A000006A IT1406644B1 (it) | 2010-04-29 | 2010-04-29 | Substrato (fetta) di materiale semiconduttore con sovrastanti strati eteroepitassiali assumenti una struttura sandwich, idoneo per la fabbricazione di componenti elettronici ibridi. |
Country Status (4)
Country | Link |
---|---|
US (2) | US9099308B2 (it) |
CN (1) | CN102939642B (it) |
IT (1) | IT1406644B1 (it) |
WO (1) | WO2011135065A1 (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107487054B (zh) * | 2016-06-12 | 2023-08-08 | 中国科学院宁波材料技术与工程研究所 | 多层复合膜、其制备方法以及作为纤维增强复合材料的连接材料的应用 |
TWI686948B (zh) * | 2019-04-15 | 2020-03-01 | 世界先進積體電路股份有限公司 | 基底結構及包含其之半導體結構的製造方法 |
CN111863590B (zh) * | 2019-04-24 | 2023-05-16 | 世界先进积体电路股份有限公司 | 衬底结构及包含其半导体结构的制造方法 |
US10896617B2 (en) | 2019-04-30 | 2021-01-19 | Honeywell International S.R.O. | Transmitting surveillance signals in response to a received signal |
US11183563B2 (en) * | 2019-10-04 | 2021-11-23 | Vanguard International Semiconductor Corporation | Substrate structure and method for fabricating semiconductor structure including the substrate structure |
CN115279956A (zh) * | 2019-12-27 | 2022-11-01 | 沃孚半导体公司 | 大直径碳化硅晶片 |
EP4135006A1 (en) | 2021-08-13 | 2023-02-15 | Siltronic AG | A method for manufacturing a substrate wafer for building group iii-v devices thereon and a substrate wafer for building group iii-v devices thereon |
WO2023147136A1 (en) * | 2022-01-31 | 2023-08-03 | Lam Research Corporation | Thin film growth modulation using wafer bow |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4234508C2 (de) * | 1992-10-13 | 1994-12-22 | Cs Halbleiter Solartech | Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht |
US6110279A (en) * | 1996-03-29 | 2000-08-29 | Denso Corporation | Method of producing single-crystal silicon carbide |
US5952679A (en) * | 1996-10-17 | 1999-09-14 | Denso Corporation | Semiconductor substrate and method for straightening warp of semiconductor substrate |
JPH10246730A (ja) * | 1997-03-04 | 1998-09-14 | Canon Inc | プローブとその製造方法、及び該プローブを備えた情報処理装置 |
JP2998724B2 (ja) * | 1997-11-10 | 2000-01-11 | 日本電気株式会社 | 張り合わせsoi基板の製造方法 |
US7439158B2 (en) * | 2003-07-21 | 2008-10-21 | Micron Technology, Inc. | Strained semiconductor by full wafer bonding |
JP4522301B2 (ja) * | 2005-03-30 | 2010-08-11 | 住友電工デバイス・イノベーション株式会社 | 半導体基板および半導体装置 |
EP2251897B1 (en) * | 2009-05-13 | 2016-01-06 | Siltronic AG | A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side |
-
2010
- 2010-04-29 IT ITCT2010A000006A patent/IT1406644B1/it active
-
2011
- 2011-04-29 WO PCT/EP2011/056817 patent/WO2011135065A1/en active Application Filing
- 2011-04-29 CN CN201180028435.1A patent/CN102939642B/zh active Active
- 2011-04-29 US US13/695,246 patent/US9099308B2/en active Active
-
2015
- 2015-06-30 US US14/788,699 patent/US9576793B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2011135065A1 (en) | 2011-11-03 |
US20150325656A1 (en) | 2015-11-12 |
US20130112995A1 (en) | 2013-05-09 |
CN102939642B (zh) | 2016-08-03 |
US9576793B2 (en) | 2017-02-21 |
US9099308B2 (en) | 2015-08-04 |
ITCT20100006A1 (it) | 2011-10-30 |
CN102939642A (zh) | 2013-02-20 |
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