IT1306182B1 - Procedimento per la anodizzazione selettiva in due fasi di uno stratodi semiconduttore per la formazione di silicio poroso. - Google Patents
Procedimento per la anodizzazione selettiva in due fasi di uno stratodi semiconduttore per la formazione di silicio poroso.Info
- Publication number
- IT1306182B1 IT1306182B1 IT1999RM000497A ITRM990497A IT1306182B1 IT 1306182 B1 IT1306182 B1 IT 1306182B1 IT 1999RM000497 A IT1999RM000497 A IT 1999RM000497A IT RM990497 A ITRM990497 A IT RM990497A IT 1306182 B1 IT1306182 B1 IT 1306182B1
- Authority
- IT
- Italy
- Prior art keywords
- stratod
- semiconductive
- phases
- procedure
- formation
- Prior art date
Links
- 238000002048 anodisation reaction Methods 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910021426 porous silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76245—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999RM000497A IT1306182B1 (it) | 1999-08-02 | 1999-08-02 | Procedimento per la anodizzazione selettiva in due fasi di uno stratodi semiconduttore per la formazione di silicio poroso. |
AU67238/00A AU6723800A (en) | 1999-08-02 | 2000-08-02 | Process for the two-step selective anodizing of a semiconductor layer for forming porous silicon |
PCT/IT2000/000330 WO2001009933A1 (en) | 1999-08-02 | 2000-08-02 | Process for the two-step selective anodizing of a semiconductor layer for forming porous silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999RM000497A IT1306182B1 (it) | 1999-08-02 | 1999-08-02 | Procedimento per la anodizzazione selettiva in due fasi di uno stratodi semiconduttore per la formazione di silicio poroso. |
Publications (3)
Publication Number | Publication Date |
---|---|
ITRM990497A0 ITRM990497A0 (it) | 1999-08-02 |
ITRM990497A1 ITRM990497A1 (it) | 2001-02-02 |
IT1306182B1 true IT1306182B1 (it) | 2001-05-30 |
Family
ID=11406921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1999RM000497A IT1306182B1 (it) | 1999-08-02 | 1999-08-02 | Procedimento per la anodizzazione selettiva in due fasi di uno stratodi semiconduttore per la formazione di silicio poroso. |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU6723800A (it) |
IT (1) | IT1306182B1 (it) |
WO (1) | WO2001009933A1 (it) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5669864A (en) * | 1979-11-09 | 1981-06-11 | Japan Electronic Ind Dev Assoc<Jeida> | Thin-film transistor |
FR2564241B1 (fr) * | 1984-05-09 | 1987-03-27 | Bois Daniel | Procede de fabrication de circuits integres du type silicium sur isolant |
EP0226091A3 (en) * | 1985-12-17 | 1989-09-13 | Texas Instruments Incorporated | Semiconductor isolation using trenches and oxidation of anodized silicon sublayer |
JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
-
1999
- 1999-08-02 IT IT1999RM000497A patent/IT1306182B1/it active
-
2000
- 2000-08-02 AU AU67238/00A patent/AU6723800A/en not_active Abandoned
- 2000-08-02 WO PCT/IT2000/000330 patent/WO2001009933A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
ITRM990497A1 (it) | 2001-02-02 |
AU6723800A (en) | 2001-02-19 |
WO2001009933A1 (en) | 2001-02-08 |
ITRM990497A0 (it) | 1999-08-02 |
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