GB0030232D0 - Porous semiconductors - Google Patents
Porous semiconductorsInfo
- Publication number
- GB0030232D0 GB0030232D0 GB0030232A GB0030232A GB0030232D0 GB 0030232 D0 GB0030232 D0 GB 0030232D0 GB 0030232 A GB0030232 A GB 0030232A GB 0030232 A GB0030232 A GB 0030232A GB 0030232 D0 GB0030232 D0 GB 0030232D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- porous semiconductors
- semiconductors
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0030232A GB2373367A (en) | 2000-12-12 | 2000-12-12 | Formation and processing of porous semiconductors using etching solution of oxidant and fluorine-containing Lewis acid |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0030232A GB2373367A (en) | 2000-12-12 | 2000-12-12 | Formation and processing of porous semiconductors using etching solution of oxidant and fluorine-containing Lewis acid |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0030232D0 true GB0030232D0 (en) | 2001-01-24 |
GB2373367A GB2373367A (en) | 2002-09-18 |
Family
ID=9904886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0030232A Withdrawn GB2373367A (en) | 2000-12-12 | 2000-12-12 | Formation and processing of porous semiconductors using etching solution of oxidant and fluorine-containing Lewis acid |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2373367A (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7400395B2 (en) | 2002-06-12 | 2008-07-15 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (SERS) substrate |
US6989897B2 (en) | 2002-06-12 | 2006-01-24 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate |
US7361313B2 (en) | 2003-02-18 | 2008-04-22 | Intel Corporation | Methods for uniform metal impregnation into a nanoporous material |
US20050084980A1 (en) * | 2003-10-17 | 2005-04-21 | Intel Corporation | Method and device for detecting a small number of molecules using surface-enhanced coherant anti-stokes raman spectroscopy |
CN100364063C (en) * | 2004-06-21 | 2008-01-23 | 中国科学院半导体研究所 | Chemical battery with porous indium phosphide, electrochemical corrosive system and method |
US7923424B2 (en) * | 2005-02-14 | 2011-04-12 | Advanced Process Technologies, Llc | Semiconductor cleaning using superacids |
CN100467670C (en) * | 2006-03-21 | 2009-03-11 | 无锡尚德太阳能电力有限公司 | Acid corrosion solution for preparing multicrystal silicon pile surface and its using method |
EP2325135B1 (en) | 2009-11-24 | 2012-07-11 | Nxp B.V. | Microscopic structure packaging method and device with packaged microscopic structure |
EP2465817B1 (en) * | 2010-12-16 | 2016-03-30 | Nxp B.V. | Method for encapsulating a MEMS structure |
WO2014192266A1 (en) * | 2013-05-31 | 2014-12-04 | 日立化成株式会社 | Etching composition |
-
2000
- 2000-12-12 GB GB0030232A patent/GB2373367A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2373367A (en) | 2002-09-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |