IT1296458B1 - Componente a semiconduttore integrato verticale su un substrato con un collegamento dal lato posteriore - Google Patents

Componente a semiconduttore integrato verticale su un substrato con un collegamento dal lato posteriore

Info

Publication number
IT1296458B1
IT1296458B1 IT97MI002564A ITMI972564A IT1296458B1 IT 1296458 B1 IT1296458 B1 IT 1296458B1 IT 97MI002564 A IT97MI002564 A IT 97MI002564A IT MI972564 A ITMI972564 A IT MI972564A IT 1296458 B1 IT1296458 B1 IT 1296458B1
Authority
IT
Italy
Prior art keywords
substrate
side connection
semiconductor component
integrated semiconductor
vertically integrated
Prior art date
Application number
IT97MI002564A
Other languages
English (en)
Inventor
Hartmut Michel
Peter Flohrs
Christian Pluntke
Alfred Goerlach
Anton Mindl
Ning Qu
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI972564A1 publication Critical patent/ITMI972564A1/it
Application granted granted Critical
Publication of IT1296458B1 publication Critical patent/IT1296458B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
IT97MI002564A 1996-11-20 1997-11-18 Componente a semiconduttore integrato verticale su un substrato con un collegamento dal lato posteriore IT1296458B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19648041A DE19648041B4 (de) 1996-11-20 1996-11-20 Integriertes vertikales Halbleiterbauelement

Publications (2)

Publication Number Publication Date
ITMI972564A1 ITMI972564A1 (it) 1999-05-18
IT1296458B1 true IT1296458B1 (it) 1999-06-25

Family

ID=7812258

Family Applications (1)

Application Number Title Priority Date Filing Date
IT97MI002564A IT1296458B1 (it) 1996-11-20 1997-11-18 Componente a semiconduttore integrato verticale su un substrato con un collegamento dal lato posteriore

Country Status (4)

Country Link
US (1) US6137124A (it)
JP (1) JPH10163503A (it)
DE (1) DE19648041B4 (it)
IT (1) IT1296458B1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2808922B1 (fr) * 2000-05-11 2003-09-12 Centre Nat Rech Scient Capteur de tension d'anode d'un composant de puissance vertical et utilisation en protection de courts-circuits
ITMI20031426A1 (it) * 2003-07-11 2005-01-12 St Microelectronics Srl Struttura resistiva integrabile monoliticamente con dispositivi igbt (insulated gate bipolar transistor) di potenza

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE179099C (it) *
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
DE2214187C3 (de) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US5175598A (en) * 1978-01-06 1992-12-29 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JPS54112157A (en) * 1978-02-23 1979-09-01 Hitachi Ltd Control circuit for field effect thyristor
US4514747A (en) * 1978-08-07 1985-04-30 Hitachi, Ltd. Field controlled thyristor with double-diffused source region
DE3416404A1 (de) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung
IT1202313B (it) * 1985-09-26 1989-02-02 Sgs Microelettronica Spa Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata
CH670173A5 (it) * 1986-06-03 1989-05-12 Bbc Brown Boveri & Cie
JPH07109882B2 (ja) * 1988-02-26 1995-11-22 三菱電機株式会社 バイポーラ型半導体スイッチング装置
JP2973588B2 (ja) * 1991-06-10 1999-11-08 富士電機株式会社 Ｍｏｓ型半導体装置
JP3153826B2 (ja) * 1992-01-17 2001-04-09 東京電力株式会社 静電誘導型半導体装置およびその製造方法
US5600160A (en) * 1993-04-14 1997-02-04 Hvistendahl; Douglas D. Multichannel field effect device
US5548133A (en) * 1994-09-19 1996-08-20 International Rectifier Corporation IGBT with increased ruggedness

Also Published As

Publication number Publication date
DE19648041B4 (de) 2010-07-15
ITMI972564A1 (it) 1999-05-18
JPH10163503A (ja) 1998-06-19
US6137124A (en) 2000-10-24
DE19648041A1 (de) 1998-05-28

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Legal Events

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0001 Granted