IT1296458B1 - Componente a semiconduttore integrato verticale su un substrato con un collegamento dal lato posteriore - Google Patents
Componente a semiconduttore integrato verticale su un substrato con un collegamento dal lato posterioreInfo
- Publication number
- IT1296458B1 IT1296458B1 IT97MI002564A ITMI972564A IT1296458B1 IT 1296458 B1 IT1296458 B1 IT 1296458B1 IT 97MI002564 A IT97MI002564 A IT 97MI002564A IT MI972564 A ITMI972564 A IT MI972564A IT 1296458 B1 IT1296458 B1 IT 1296458B1
- Authority
- IT
- Italy
- Prior art keywords
- substrate
- side connection
- semiconductor component
- integrated semiconductor
- vertically integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19648041A DE19648041B4 (de) | 1996-11-20 | 1996-11-20 | Integriertes vertikales Halbleiterbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI972564A1 ITMI972564A1 (it) | 1999-05-18 |
IT1296458B1 true IT1296458B1 (it) | 1999-06-25 |
Family
ID=7812258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT97MI002564A IT1296458B1 (it) | 1996-11-20 | 1997-11-18 | Componente a semiconduttore integrato verticale su un substrato con un collegamento dal lato posteriore |
Country Status (4)
Country | Link |
---|---|
US (1) | US6137124A (it) |
JP (1) | JPH10163503A (it) |
DE (1) | DE19648041B4 (it) |
IT (1) | IT1296458B1 (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2808922B1 (fr) * | 2000-05-11 | 2003-09-12 | Centre Nat Rech Scient | Capteur de tension d'anode d'un composant de puissance vertical et utilisation en protection de courts-circuits |
ITMI20031426A1 (it) * | 2003-07-11 | 2005-01-12 | St Microelectronics Srl | Struttura resistiva integrabile monoliticamente con dispositivi igbt (insulated gate bipolar transistor) di potenza |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE179099C (it) * | ||||
US3295030A (en) * | 1963-12-18 | 1966-12-27 | Signetics Corp | Field effect transistor and method |
DE2214187C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
US5175598A (en) * | 1978-01-06 | 1992-12-29 | Zaidan Hojin Handotai Kenkyu Shinkokai | Semiconductor switching device |
JPS54112157A (en) * | 1978-02-23 | 1979-09-01 | Hitachi Ltd | Control circuit for field effect thyristor |
US4514747A (en) * | 1978-08-07 | 1985-04-30 | Hitachi, Ltd. | Field controlled thyristor with double-diffused source region |
DE3416404A1 (de) * | 1984-05-04 | 1985-11-07 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung |
IT1202313B (it) * | 1985-09-26 | 1989-02-02 | Sgs Microelettronica Spa | Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata |
CH670173A5 (it) * | 1986-06-03 | 1989-05-12 | Bbc Brown Boveri & Cie | |
JPH07109882B2 (ja) * | 1988-02-26 | 1995-11-22 | 三菱電機株式会社 | バイポーラ型半導体スイッチング装置 |
JP2973588B2 (ja) * | 1991-06-10 | 1999-11-08 | 富士電機株式会社 | Mos型半導体装置 |
JP3153826B2 (ja) * | 1992-01-17 | 2001-04-09 | 東京電力株式会社 | 静電誘導型半導体装置およびその製造方法 |
US5600160A (en) * | 1993-04-14 | 1997-02-04 | Hvistendahl; Douglas D. | Multichannel field effect device |
US5548133A (en) * | 1994-09-19 | 1996-08-20 | International Rectifier Corporation | IGBT with increased ruggedness |
-
1996
- 1996-11-20 DE DE19648041A patent/DE19648041B4/de not_active Expired - Lifetime
-
1997
- 1997-11-03 US US08/963,447 patent/US6137124A/en not_active Expired - Lifetime
- 1997-11-17 JP JP9315266A patent/JPH10163503A/ja active Pending
- 1997-11-18 IT IT97MI002564A patent/IT1296458B1/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DE19648041B4 (de) | 2010-07-15 |
ITMI972564A1 (it) | 1999-05-18 |
JPH10163503A (ja) | 1998-06-19 |
US6137124A (en) | 2000-10-24 |
DE19648041A1 (de) | 1998-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |