IT1286018B1 - Disposizione a semiconduttore con un diodo zener e con una ulteriore disposizione circuitale con esso collegata e integrata - Google Patents

Disposizione a semiconduttore con un diodo zener e con una ulteriore disposizione circuitale con esso collegata e integrata

Info

Publication number
IT1286018B1
IT1286018B1 IT96MI002508A ITMI962508A IT1286018B1 IT 1286018 B1 IT1286018 B1 IT 1286018B1 IT 96MI002508 A IT96MI002508 A IT 96MI002508A IT MI962508 A ITMI962508 A IT MI962508A IT 1286018 B1 IT1286018 B1 IT 1286018B1
Authority
IT
Italy
Prior art keywords
integrated
zener diode
additional circuit
arrangement
circuit arrangement
Prior art date
Application number
IT96MI002508A
Other languages
English (en)
Inventor
Frank Werner
Hans Raub
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI962508A0 publication Critical patent/ITMI962508A0/it
Publication of ITMI962508A1 publication Critical patent/ITMI962508A1/it
Application granted granted Critical
Publication of IT1286018B1 publication Critical patent/IT1286018B1/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18Auxiliary circuits, e.g. for writing into memory
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT96MI002508A 1995-11-30 1996-11-29 Disposizione a semiconduttore con un diodo zener e con una ulteriore disposizione circuitale con esso collegata e integrata IT1286018B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19544659A DE19544659A1 (de) 1995-11-30 1995-11-30 Halbleiteranordnung mit einer Zenerdiode

Publications (3)

Publication Number Publication Date
ITMI962508A0 ITMI962508A0 (it) 1996-11-29
ITMI962508A1 ITMI962508A1 (it) 1998-05-29
IT1286018B1 true IT1286018B1 (it) 1998-06-26

Family

ID=7778819

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96MI002508A IT1286018B1 (it) 1995-11-30 1996-11-29 Disposizione a semiconduttore con un diodo zener e con una ulteriore disposizione circuitale con esso collegata e integrata

Country Status (3)

Country Link
JP (1) JPH09172177A (it)
DE (1) DE19544659A1 (it)
IT (1) IT1286018B1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10332512A1 (de) * 2003-07-17 2005-02-03 Robert Bosch Gmbh Vorrichtung zum Beaufschlagen eines elektrischen Bauteils und Verwendung eines Leistungsschaltelements in genannter Vorrichtung
JP2014103276A (ja) * 2012-11-20 2014-06-05 Shindengen Electric Mfg Co Ltd トリミング回路、集積回路装置、及びトリミング方法

Also Published As

Publication number Publication date
ITMI962508A0 (it) 1996-11-29
JPH09172177A (ja) 1997-06-30
ITMI962508A1 (it) 1998-05-29
DE19544659A1 (de) 1997-06-05

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Legal Events

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0001 Granted