IT1273939B - Componente integrato particolarmente per impedire la formazione di un transistor parassita - Google Patents
Componente integrato particolarmente per impedire la formazione di un transistor parassitaInfo
- Publication number
- IT1273939B IT1273939B ITMI950303A ITMI950303A IT1273939B IT 1273939 B IT1273939 B IT 1273939B IT MI950303 A ITMI950303 A IT MI950303A IT MI950303 A ITMI950303 A IT MI950303A IT 1273939 B IT1273939 B IT 1273939B
- Authority
- IT
- Italy
- Prior art keywords
- formation
- prevent
- integrated component
- particularly integrated
- parasite transistor
- Prior art date
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 244000045947 parasite Species 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4405631A DE4405631C1 (de) | 1994-02-22 | 1994-02-22 | Integriertes Bauelement |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI950303A0 ITMI950303A0 (it) | 1995-02-20 |
ITMI950303A1 ITMI950303A1 (it) | 1996-08-20 |
IT1273939B true IT1273939B (it) | 1997-07-11 |
Family
ID=6510869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI950303A IT1273939B (it) | 1994-02-22 | 1995-02-20 | Componente integrato particolarmente per impedire la formazione di un transistor parassita |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH07263670A (de) |
DE (1) | DE4405631C1 (de) |
FR (1) | FR2716574A1 (de) |
IT (1) | IT1273939B (de) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3751722A (en) * | 1971-04-30 | 1973-08-07 | Standard Microsyst Smc | Mos integrated circuit with substrate containing selectively formed resistivity regions |
US3990092A (en) * | 1974-01-11 | 1976-11-02 | Hitachi, Ltd. | Resistance element for semiconductor integrated circuit |
US4394674A (en) * | 1979-10-09 | 1983-07-19 | Nippon Electric Co., Ltd. | Insulated gate field effect transistor |
JPS5994873A (ja) * | 1982-11-22 | 1984-05-31 | Nissan Motor Co Ltd | Mosトランジスタ |
JPS59198749A (ja) * | 1983-04-25 | 1984-11-10 | Mitsubishi Electric Corp | 相補形電界効果トランジスタ |
JP3206026B2 (ja) * | 1991-07-19 | 2001-09-04 | 富士電機株式会社 | 高電圧用misfetを備える半導体装置 |
JPH06180858A (ja) * | 1992-12-10 | 1994-06-28 | Hitachi Maxell Ltd | 光ディスク及びその製造方法 |
JPH075386A (ja) * | 1993-06-15 | 1995-01-10 | Nikon Corp | 光走査装置 |
-
1994
- 1994-02-22 DE DE4405631A patent/DE4405631C1/de not_active Expired - Fee Related
-
1995
- 1995-01-23 FR FR9500726A patent/FR2716574A1/fr active Pending
- 1995-02-20 IT ITMI950303A patent/IT1273939B/it active IP Right Grant
- 1995-02-21 JP JP7032552A patent/JPH07263670A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH07263670A (ja) | 1995-10-13 |
DE4405631C1 (de) | 1995-07-20 |
ITMI950303A0 (it) | 1995-02-20 |
FR2716574A1 (fr) | 1995-08-25 |
ITMI950303A1 (it) | 1996-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |