IT1230934B - Procedimento di apertura contatti micrometrici in dispositivi elettronici a semiconduttore. - Google Patents
Procedimento di apertura contatti micrometrici in dispositivi elettronici a semiconduttore.Info
- Publication number
- IT1230934B IT1230934B IT8920999A IT2099989A IT1230934B IT 1230934 B IT1230934 B IT 1230934B IT 8920999 A IT8920999 A IT 8920999A IT 2099989 A IT2099989 A IT 2099989A IT 1230934 B IT1230934 B IT 1230934B
- Authority
- IT
- Italy
- Prior art keywords
- micrometric
- contacts
- electronic devices
- semiconductor electronic
- opening procedure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8920999A IT1230934B (it) | 1989-06-27 | 1989-06-27 | Procedimento di apertura contatti micrometrici in dispositivi elettronici a semiconduttore. |
EP90111342A EP0405256A1 (en) | 1989-06-27 | 1990-06-15 | A method of hatching micrometric contacts in semiconductor electronic devices |
JP2164347A JPH03129822A (ja) | 1989-06-27 | 1990-06-25 | 半導体エレクトロニックデバイスにおいて細かい平行線を彫る方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8920999A IT1230934B (it) | 1989-06-27 | 1989-06-27 | Procedimento di apertura contatti micrometrici in dispositivi elettronici a semiconduttore. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8920999A0 IT8920999A0 (it) | 1989-06-27 |
IT1230934B true IT1230934B (it) | 1991-11-08 |
Family
ID=11175210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8920999A IT1230934B (it) | 1989-06-27 | 1989-06-27 | Procedimento di apertura contatti micrometrici in dispositivi elettronici a semiconduttore. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0405256A1 (it) |
JP (1) | JPH03129822A (it) |
IT (1) | IT1230934B (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0554123A1 (en) * | 1992-01-31 | 1993-08-04 | STMicroelectronics, Inc. | A method for forming a contact |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2929060A1 (de) * | 1979-07-18 | 1981-02-05 | Siemens Ag | Verfahren zum herstellen von integrierten mos-halbleiterschaltungen nach der doppel-silizium-gate-technologie |
US4495220A (en) * | 1983-10-07 | 1985-01-22 | Trw Inc. | Polyimide inter-metal dielectric process |
US4502915B1 (en) * | 1984-01-23 | 1998-11-03 | Texas Instruments Inc | Two-step plasma process for selective anisotropic etching of polycrystalline silicon without leaving residue |
EP0282820A1 (de) * | 1987-03-13 | 1988-09-21 | Siemens Aktiengesellschaft | Verfahren zum Erzeugen von Kontaktlöchern mit abgeschrägten Flanken in Zwischenoxidschichten |
-
1989
- 1989-06-27 IT IT8920999A patent/IT1230934B/it active
-
1990
- 1990-06-15 EP EP90111342A patent/EP0405256A1/en not_active Withdrawn
- 1990-06-25 JP JP2164347A patent/JPH03129822A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH03129822A (ja) | 1991-06-03 |
IT8920999A0 (it) | 1989-06-27 |
EP0405256A1 (en) | 1991-01-02 |
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