IT1217322B - Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina - Google Patents

Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina

Info

Publication number
IT1217322B
IT1217322B IT06630/87A IT663087A IT1217322B IT 1217322 B IT1217322 B IT 1217322B IT 06630/87 A IT06630/87 A IT 06630/87A IT 663087 A IT663087 A IT 663087A IT 1217322 B IT1217322 B IT 1217322B
Authority
IT
Italy
Prior art keywords
transistor
tegrate
lithic
control circuit
device including
Prior art date
Application number
IT06630/87A
Other languages
English (en)
Other versions
IT8706630A0 (it
Inventor
Raffaelle Zambrano
Salvatore Musoneli
Original Assignee
Sgs Microelettronica Spa
Ora S G S Thomson Microelettro
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa, Ora S G S Thomson Microelettro filed Critical Sgs Microelettronica Spa
Priority to IT06630/87A priority Critical patent/IT1217322B/it
Publication of IT8706630A0 publication Critical patent/IT8706630A0/it
Priority to EP88202898A priority patent/EP0322040B1/en
Priority to DE88202898T priority patent/DE3880996T2/de
Priority to US07/287,067 priority patent/US4965215A/en
Priority to JP63322214A priority patent/JP2677644B2/ja
Application granted granted Critical
Publication of IT1217322B publication Critical patent/IT1217322B/it
Priority to US08/384,250 priority patent/USRE38510E1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT06630/87A 1987-12-22 1987-12-22 Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina IT1217322B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT06630/87A IT1217322B (it) 1987-12-22 1987-12-22 Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
EP88202898A EP0322040B1 (en) 1987-12-22 1988-12-16 Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
DE88202898T DE3880996T2 (de) 1987-12-22 1988-12-16 Herstellungsverfahren für eine monolithische Halbleiteranordnung mit wenigstens einem Transistor einer integrierten Kontrollschaltung und einem auf dem gleichen Chip integrierten Leistungstransistor.
US07/287,067 US4965215A (en) 1987-12-22 1988-12-21 Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
JP63322214A JP2677644B2 (ja) 1987-12-22 1988-12-22 半導体装置およびその製造方法
US08/384,250 USRE38510E1 (en) 1987-12-22 1995-02-06 Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT06630/87A IT1217322B (it) 1987-12-22 1987-12-22 Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina

Publications (2)

Publication Number Publication Date
IT8706630A0 IT8706630A0 (it) 1987-12-22
IT1217322B true IT1217322B (it) 1990-03-22

Family

ID=11121612

Family Applications (1)

Application Number Title Priority Date Filing Date
IT06630/87A IT1217322B (it) 1987-12-22 1987-12-22 Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina

Country Status (5)

Country Link
US (1) US4965215A (it)
EP (1) EP0322040B1 (it)
JP (1) JP2677644B2 (it)
DE (1) DE3880996T2 (it)
IT (1) IT1217322B (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529939A (en) * 1986-09-26 1996-06-25 Analog Devices, Incorporated Method of making an integrated circuit with complementary isolated bipolar transistors
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
US5246871A (en) * 1989-06-16 1993-09-21 Sgs-Thomson Microelectronics S.R.L. Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip
IT1234252B (it) * 1989-06-16 1992-05-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente un circuito di comando e uno stadio di potenza a flusso di corrente verticale integrati in modo monolitico nella stessa piastrina e relativo processo di fabbricazione
DE69109884T2 (de) * 1990-02-09 1995-10-26 Canon Kk Tintenstrahlaufzeichnungssystem.
GB2248142A (en) * 1990-09-19 1992-03-25 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
IT1246759B (it) * 1990-12-31 1994-11-26 Sgs Thomson Microelectronics Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.
EP0555496B1 (en) * 1991-07-03 1997-03-26 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Lateral bipolar transistor structure including an integrated control circuit and integrated power transistor and associated manufacturing process
IT1252102B (it) * 1991-11-26 1995-06-02 Cons Ric Microelettronica Dispositivo monolitico a semiconduttore a struttura verticale con transistore di potenza a base profonda e emettitore a dita avente resistenze di ballast
EP0632505B1 (en) * 1993-07-01 1997-10-01 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno A vertical bipolar power transistor with buried base and interdigitated geometry
EP0632503B1 (en) * 1993-07-01 2001-10-31 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrated edge structure for high voltage semiconductor devices and related manufacturing process
KR0171128B1 (ko) * 1995-04-21 1999-02-01 김우중 수직형 바이폴라 트랜지스터
EP0809294B1 (en) * 1996-05-21 2002-01-02 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Power semiconductor device structure with vertical PNP transistor
EP0810662A1 (en) * 1996-05-29 1997-12-03 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno An integrated device in an "emitter switching" configuration and with a cellular structure
DE69633181D1 (de) * 1996-10-18 2004-09-23 St Microelectronics Srl Leistungsbipolartransistor mit vergrabener Basis und ineinandergreifender Geometrie
EP0878848A1 (en) * 1997-05-16 1998-11-18 STMicroelectronics S.r.l. Vertical bipolar semiconductor power transistor with an interdigitised geometry, with optimisation of the base-to-emitter potential difference
IT1298516B1 (it) * 1998-01-30 2000-01-12 Sgs Thomson Microelectronics Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione
US6448160B1 (en) * 1999-04-01 2002-09-10 Apd Semiconductor, Inc. Method of fabricating power rectifier device to vary operating parameters and resulting device
US6451655B1 (en) * 1999-08-26 2002-09-17 Stmicroelectronics S.R.L. Electronic power device monolithically integrated on a semiconductor and comprising a first power region and at least a second region as well as an isolation structure of limited planar dimension
US6495423B1 (en) * 1999-08-26 2002-12-17 Stmicroelectronics S.R.L. Electronic power device monolithically integrated on a semiconductor and comprising edge protection structures having a limited planar dimension
JP4508606B2 (ja) * 2003-03-20 2010-07-21 株式会社リコー 複数種類のウエルを備えた半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3481801A (en) * 1966-10-10 1969-12-02 Frances Hugle Isolation technique for integrated circuits
US4054899A (en) * 1970-09-03 1977-10-18 Texas Instruments Incorporated Process for fabricating monolithic circuits having matched complementary transistors and product
US4032372A (en) * 1971-04-28 1977-06-28 International Business Machines Corporation Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
DE2351985A1 (de) * 1973-10-17 1975-04-30 Itt Ind Gmbh Deutsche Planardiffusionsverfahren zum herstellen einer monolithisch integrierten festkoerperschaltung
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
JPS558070A (en) * 1978-07-03 1980-01-21 Mitsubishi Electric Corp Manufacture of semiconductor
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
NL8006827A (nl) * 1980-12-17 1982-07-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
FR2523370B1 (fr) * 1982-03-12 1985-12-13 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
US4641172A (en) * 1982-08-26 1987-02-03 Mitsubishi Denki Kabushiki Kaisha Buried PN junction isolation regions for high power semiconductor devices
DE3368344D1 (en) * 1983-02-12 1987-01-22 Itt Ind Gmbh Deutsche Method of making bipolar planar transistors
EP0144865B1 (en) * 1983-12-05 1991-06-26 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
IT1214806B (it) * 1984-09-21 1990-01-18 Ates Componenti Elettron Dispositivo integrato monolitico di potenza e semiconduttore
IT1214808B (it) * 1984-12-20 1990-01-18 Ates Componenti Elettron Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli
IT1215024B (it) * 1986-10-01 1990-01-31 Sgs Microelettronica Spa Processo per la formazione di un dispositivo monolitico a semiconduttore di alta tensione

Also Published As

Publication number Publication date
DE3880996D1 (de) 1993-06-17
EP0322040B1 (en) 1993-05-12
US4965215A (en) 1990-10-23
IT8706630A0 (it) 1987-12-22
DE3880996T2 (de) 1993-10-07
EP0322040A3 (en) 1990-02-07
EP0322040A2 (en) 1989-06-28
JPH022664A (ja) 1990-01-08
JP2677644B2 (ja) 1997-11-17

Similar Documents

Publication Publication Date Title
IT1217322B (it) Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
IT1176957B (it) Dispositivo a circuito integrato a semiconduttori e procedimento di fabbricazione di esso
DE3476493D1 (en) A semiconductor integrated circuit device comprising an mos transistor and a bipolar transistor and a manufacturing method of the same
GB2214351B (en) Method for manufacturing double-diffused metal oxide semiconductor field effect transistor device and the device thereby manufactured
EP0189914A3 (en) Semiconductor integrated circuit device and method of manufacturing the same
KR100199260B1 (en) Semiconductor integrated circuit device and fabrication method of the same
DE69118952D1 (de) Halbleitervorrichtung mit integrierter Halbleiterschaltung und Betriebsverfahren dafür
KR900019215A (ko) 반도체장치 및 그의 제조방법
KR910007164A (ko) 반도체장치 및 그 제조방법
EP0721211A3 (en) Semiconductor device and manufacturing method
SG50702A1 (en) Semiconductor device having an improved lead arrangement and method for manufacturing the same
EP0154337A3 (en) Transistor circuit for semiconductor device with hysteresis operation and manufacturing method therefor
IT1184402B (it) Dispositivo a circuito integrato a semiconduttori e procedimento per la produzione di esso
EP0328393A3 (en) Semiconductor laser device and the manufacturing method thereof
DE69029907D1 (de) Leistungs-mosfet-transistorschaltung
EP0434914A3 (en) High voltage semiconductor device having a sense electrode and a method of manufacturing the same
ITMI913265A0 (it) Dispositivo a semiconduttore comprendente almeno un transistor di potenza e almeno un circuito di comando con circuito di isolamento dinamico integrati in maniera manolitica nella stessa piastrina
EP0158292A3 (en) Semiconductor device having a drive circuit element and an output transistor
DE68928312D1 (de) Leistungshalbleitervorrichtung
IT1218200B (it) Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti
EP0534632A3 (en) Semiconductor integrated circuit device and method of fabricating the same
EP0513644A3 (en) Field effect thin film transistor and static-type semiconductor memory device provided with memory cell having complementary field effect transistor and method of manufacturing the same
KR860005450A (ko) 반도체 집적 회로장치 및 그의 제조방법
EP0193934A3 (en) Semiconductor integreated circuit device and method of manufacturing the same
IT8547677A1 (it) Dispositivo e semiconduttore in particolare circuito darlington bipolare -mos integrato

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227