IT1182559B - Transistore bipolare di potenza utilizzabile in commutazione - Google Patents

Transistore bipolare di potenza utilizzabile in commutazione

Info

Publication number
IT1182559B
IT1182559B IT67802/85A IT6780285A IT1182559B IT 1182559 B IT1182559 B IT 1182559B IT 67802/85 A IT67802/85 A IT 67802/85A IT 6780285 A IT6780285 A IT 6780285A IT 1182559 B IT1182559 B IT 1182559B
Authority
IT
Italy
Prior art keywords
switching
power transistor
bipolar power
transistor usable
usable
Prior art date
Application number
IT67802/85A
Other languages
English (en)
Other versions
IT8567802A0 (it
Inventor
Jean Baptiste Quoirin
Original Assignee
Thomson Csf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Csf filed Critical Thomson Csf
Publication of IT8567802A0 publication Critical patent/IT8567802A0/it
Application granted granted Critical
Publication of IT1182559B publication Critical patent/IT1182559B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT67802/85A 1984-09-21 1985-09-20 Transistore bipolare di potenza utilizzabile in commutazione IT1182559B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8414570A FR2570879B1 (fr) 1984-09-21 1984-09-21 Transistor bipolaire de puissance utilisable en commutation

Publications (2)

Publication Number Publication Date
IT8567802A0 IT8567802A0 (it) 1985-09-20
IT1182559B true IT1182559B (it) 1987-10-05

Family

ID=9307970

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67802/85A IT1182559B (it) 1984-09-21 1985-09-20 Transistore bipolare di potenza utilizzabile in commutazione

Country Status (2)

Country Link
FR (1) FR2570879B1 (it)
IT (1) IT1182559B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728671B2 (ja) * 1988-02-03 1998-03-18 株式会社東芝 バイポーラトランジスタの製造方法
AU2805092A (en) * 1991-10-23 1993-05-21 Microunity Systems Engineering, Inc. Bipolar junction transistor exhibiting improved beta and punch-through characteristics
US6262472B1 (en) 1999-05-17 2001-07-17 National Semiconductor Corporation Bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6043130A (en) * 1999-05-17 2000-03-28 National Semiconductor Corporation Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
US4337475A (en) * 1979-06-15 1982-06-29 Gold Star Semiconductor, Ltd. High power transistor with highly doped buried base layer

Also Published As

Publication number Publication date
FR2570879A1 (fr) 1986-03-28
IT8567802A0 (it) 1985-09-20
FR2570879B1 (fr) 1987-05-22

Similar Documents

Publication Publication Date Title
DE3574777D1 (de) Hochspannungsgeraet.
KR860004483A (ko) 헤테로 접합 바이폴라 트랜지스터
DE3485831D1 (de) Integrierte leistungshalbleiterschaltanordnungen mit igt- und mosfet-strukturen.
DE3584203D1 (de) Hochfrequenzleistungsverstaerker mit bipolaren transistoren.
DE3782864D1 (de) Schaltnetzteil.
BR8500628A (pt) Circuito de comutacao de potencia
IT8520197A0 (it) Accoppiatore di potenza in filmsottile.
IT1173869B (it) Interruttore di potenza per l'uso con radiofrequenze
EP0190931A3 (en) Monolithic bipolar mos switching device
DE3576228D1 (de) Schalteinrichtung.
GB8408549D0 (en) Bipolar power transistor stuctures
DK239285D0 (da) Omskiftningsspaendingsforsyning
DE3779165D1 (de) Spannungsausgabeschaltung.
IT1213171B (it) Transistore bipolare di potenza.
GB8511381D0 (en) Power bipolar transistor
IT1182559B (it) Transistore bipolare di potenza utilizzabile in commutazione
IT1196140B (it) Vibrocompressore con dispositivo limitatore di potenza
EP0268531A3 (en) Bipolar transistor switching enhancement circuit
DE3668262D1 (de) Schaltnetzteil.
NO861296L (no) Svitsje-anordning.
DE3762939D1 (de) Hochfrequenz-leistungs-transistor in bipolar-epitaxial-technik.
AT378632B (de) Kuehlvorrichtung fuer gekapselte schaltzellen
IT8622192A0 (it) Macchina-turso con regolazione di potenza.
DE3583993D1 (de) Hochspannungs-thyristor-umrichter.
KR850010486U (ko) 전원 전압 전환 장치

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929