IT1182559B - BIPOLAR POWER TRANSISTOR USABLE IN SWITCHING - Google Patents

BIPOLAR POWER TRANSISTOR USABLE IN SWITCHING

Info

Publication number
IT1182559B
IT1182559B IT67802/85A IT6780285A IT1182559B IT 1182559 B IT1182559 B IT 1182559B IT 67802/85 A IT67802/85 A IT 67802/85A IT 6780285 A IT6780285 A IT 6780285A IT 1182559 B IT1182559 B IT 1182559B
Authority
IT
Italy
Prior art keywords
switching
power transistor
bipolar power
transistor usable
usable
Prior art date
Application number
IT67802/85A
Other languages
Italian (it)
Other versions
IT8567802A0 (en
Inventor
Jean Baptiste Quoirin
Original Assignee
Thomson Csf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Csf filed Critical Thomson Csf
Publication of IT8567802A0 publication Critical patent/IT8567802A0/en
Application granted granted Critical
Publication of IT1182559B publication Critical patent/IT1182559B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT67802/85A 1984-09-21 1985-09-20 BIPOLAR POWER TRANSISTOR USABLE IN SWITCHING IT1182559B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8414570A FR2570879B1 (en) 1984-09-21 1984-09-21 BIPOLAR POWER TRANSISTOR FOR SWITCHING USE

Publications (2)

Publication Number Publication Date
IT8567802A0 IT8567802A0 (en) 1985-09-20
IT1182559B true IT1182559B (en) 1987-10-05

Family

ID=9307970

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67802/85A IT1182559B (en) 1984-09-21 1985-09-20 BIPOLAR POWER TRANSISTOR USABLE IN SWITCHING

Country Status (2)

Country Link
FR (1) FR2570879B1 (en)
IT (1) IT1182559B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728671B2 (en) * 1988-02-03 1998-03-18 株式会社東芝 Manufacturing method of bipolar transistor
EP0609351A4 (en) * 1991-10-23 1995-01-04 Microunity Systems Eng Bipolar junction transistor exhibiting improved beta and punch-through characteristics.
US6043130A (en) * 1999-05-17 2000-03-28 National Semiconductor Corporation Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6262472B1 (en) 1999-05-17 2001-07-17 National Semiconductor Corporation Bipolar transistor compatible with CMOS utilizing tilted ion implanted base

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2374742A1 (en) * 1976-12-20 1978-07-13 Radiotechnique Compelec MULTI-LAYER TRANSISTOR FOR HIGH VOLTAGES AND ITS MANUFACTURING PROCESS
US4337475A (en) * 1979-06-15 1982-06-29 Gold Star Semiconductor, Ltd. High power transistor with highly doped buried base layer

Also Published As

Publication number Publication date
FR2570879A1 (en) 1986-03-28
IT8567802A0 (en) 1985-09-20
FR2570879B1 (en) 1987-05-22

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929