IT1101183B - IMPROVEMENT IN THE PRODUCTION PROCESS FOR BIPOLAR TRANSISTORS INTAGRATED WITH HIGH BREAKDOWN VOLTAGE COLLECTOR-EMITTER AND RESULTING PRODUCT - Google Patents

IMPROVEMENT IN THE PRODUCTION PROCESS FOR BIPOLAR TRANSISTORS INTAGRATED WITH HIGH BREAKDOWN VOLTAGE COLLECTOR-EMITTER AND RESULTING PRODUCT

Info

Publication number
IT1101183B
IT1101183B IT30507/78A IT3050778A IT1101183B IT 1101183 B IT1101183 B IT 1101183B IT 30507/78 A IT30507/78 A IT 30507/78A IT 3050778 A IT3050778 A IT 3050778A IT 1101183 B IT1101183 B IT 1101183B
Authority
IT
Italy
Prior art keywords
intagrated
emitter
improvement
production process
breakdown voltage
Prior art date
Application number
IT30507/78A
Other languages
Italian (it)
Other versions
IT7830507A0 (en
Inventor
Angelo Casadei
Mario Camagni
Franco Bertotti
Paolo Carmina
Auretta Cuccia
Vincenzo Prestileo
Brunello Sanasi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT30507/78A priority Critical patent/IT1101183B/en
Publication of IT7830507A0 publication Critical patent/IT7830507A0/en
Priority to SE7909953A priority patent/SE454631B/en
Priority to FR7929737A priority patent/FR2443742A1/en
Priority to GB7941857A priority patent/GB2037487A/en
Priority to DE19792948800 priority patent/DE2948800A1/en
Application granted granted Critical
Publication of IT1101183B publication Critical patent/IT1101183B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
IT30507/78A 1978-12-04 1978-12-04 IMPROVEMENT IN THE PRODUCTION PROCESS FOR BIPOLAR TRANSISTORS INTAGRATED WITH HIGH BREAKDOWN VOLTAGE COLLECTOR-EMITTER AND RESULTING PRODUCT IT1101183B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT30507/78A IT1101183B (en) 1978-12-04 1978-12-04 IMPROVEMENT IN THE PRODUCTION PROCESS FOR BIPOLAR TRANSISTORS INTAGRATED WITH HIGH BREAKDOWN VOLTAGE COLLECTOR-EMITTER AND RESULTING PRODUCT
SE7909953A SE454631B (en) 1978-12-04 1979-12-03 SET FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR DEVICE WITH EPITAXIAL GROWTH DIVIDED IN THREE SEPARATE STEPS STABILIZED AT THREE DIFFERENT TEMPERATURES
FR7929737A FR2443742A1 (en) 1978-12-04 1979-12-04 IMPROVEMENT IN THE PROCESS FOR THE PRODUCTION OF INTEGRATED BIPOLAR TRANSISTORS WITH HIGH VOLTAGE COLLECTOR-TRANSMITTER BREAKAGE AND THE PRODUCT THUS OBTAINED
GB7941857A GB2037487A (en) 1978-12-04 1979-12-04 Method for producing an integrated semiconductor device
DE19792948800 DE2948800A1 (en) 1978-12-04 1979-12-04 METHOD FOR PRODUCING INTEGRATED, BIPOLAR TRANSISTORS WITH INCREASED BREAKING VOLTAGE BETWEEN COLLECTOR AND EMITTER AND TRANSISTOR PRODUCED BY THE SAME

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT30507/78A IT1101183B (en) 1978-12-04 1978-12-04 IMPROVEMENT IN THE PRODUCTION PROCESS FOR BIPOLAR TRANSISTORS INTAGRATED WITH HIGH BREAKDOWN VOLTAGE COLLECTOR-EMITTER AND RESULTING PRODUCT

Publications (2)

Publication Number Publication Date
IT7830507A0 IT7830507A0 (en) 1978-12-04
IT1101183B true IT1101183B (en) 1985-09-28

Family

ID=11229874

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30507/78A IT1101183B (en) 1978-12-04 1978-12-04 IMPROVEMENT IN THE PRODUCTION PROCESS FOR BIPOLAR TRANSISTORS INTAGRATED WITH HIGH BREAKDOWN VOLTAGE COLLECTOR-EMITTER AND RESULTING PRODUCT

Country Status (5)

Country Link
DE (1) DE2948800A1 (en)
FR (1) FR2443742A1 (en)
GB (1) GB2037487A (en)
IT (1) IT1101183B (en)
SE (1) SE454631B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201600130185A1 (en) * 2016-12-22 2018-06-22 St Microelectronics Srl PROCESS OF MANUFACTURING A SEMICONDUCTOR DEVICE INTEGRATING A VERTICAL CONDUCTIVE TRANSISTOR, AND SEMICONDUCTOR DEVICE

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1300768A (en) * 1969-07-29 1972-12-20 Fairchild Camera Instr Co Improvements in or relating to semiconductor structures

Also Published As

Publication number Publication date
GB2037487A (en) 1980-07-09
FR2443742A1 (en) 1980-07-04
IT7830507A0 (en) 1978-12-04
FR2443742B1 (en) 1985-03-08
SE7909953L (en) 1980-06-05
DE2948800A1 (en) 1980-06-19
SE454631B (en) 1988-05-16

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227