IT1087375B - Dispositivo composito a semiconduttori - Google Patents

Dispositivo composito a semiconduttori

Info

Publication number
IT1087375B
IT1087375B IT27164/77A IT2716477A IT1087375B IT 1087375 B IT1087375 B IT 1087375B IT 27164/77 A IT27164/77 A IT 27164/77A IT 2716477 A IT2716477 A IT 2716477A IT 1087375 B IT1087375 B IT 1087375B
Authority
IT
Italy
Prior art keywords
composite device
semiconductor composite
semiconductor
composite
Prior art date
Application number
IT27164/77A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1087375B publication Critical patent/IT1087375B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • H01L27/0766Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT27164/77A 1976-09-03 1977-09-01 Dispositivo composito a semiconduttori IT1087375B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2639799A DE2639799C2 (de) 1976-09-03 1976-09-03 Halbleiterverbundanordnung

Publications (1)

Publication Number Publication Date
IT1087375B true IT1087375B (it) 1985-06-04

Family

ID=5987116

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27164/77A IT1087375B (it) 1976-09-03 1977-09-01 Dispositivo composito a semiconduttori

Country Status (5)

Country Link
US (1) US4178603A (it)
JP (1) JPS5331976A (it)
DE (1) DE2639799C2 (it)
FR (1) FR2363895A1 (it)
IT (1) IT1087375B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156356A (en) * 1979-05-11 1980-12-05 Mitsubishi Electric Corp Semiconductor ic and manufacture thereof
JPS55156357A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Ic device
JPS6281120A (ja) * 1985-10-03 1987-04-14 Fujitsu Ltd 半導体装置
US4814852A (en) * 1987-12-07 1989-03-21 Motorola, Inc. Controlled voltage drop diode
JP4646297B2 (ja) 2005-02-10 2011-03-09 不二精工株式会社 2重円筒によるコードで補強されたゴムシートの製造装置及び製造方法
CN112533538B (zh) * 2018-08-24 2024-04-16 株式会社岛津制作所 X射线摄影装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
JPS555295B2 (it) * 1971-09-10 1980-02-05
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same
US3943554A (en) * 1973-07-30 1976-03-09 Signetics Corporation Threshold switching integrated circuit and method for forming the same
US3877050A (en) * 1973-08-27 1975-04-08 Signetics Corp Integrated circuit having guard ring schottky barrier diode and method
US4054898A (en) * 1973-09-28 1977-10-18 Robert Bosch Gmbh Switching system to short-circuit a load with minimum residual voltage
US4032962A (en) * 1975-12-29 1977-06-28 Ibm Corporation High density semiconductor integrated circuit layout

Also Published As

Publication number Publication date
FR2363895B1 (it) 1984-04-13
DE2639799C2 (de) 1984-04-12
JPS5331976A (en) 1978-03-25
DE2639799A1 (de) 1978-03-09
FR2363895A1 (fr) 1978-03-31
JPS63953B2 (it) 1988-01-09
US4178603A (en) 1979-12-11

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