IT1027799B - Circuito elettrico comprendente complessi bistabili di tipo prin oipale asservito - Google Patents

Circuito elettrico comprendente complessi bistabili di tipo prin oipale asservito

Info

Publication number
IT1027799B
IT1027799B IT30721/74A IT3072174A IT1027799B IT 1027799 B IT1027799 B IT 1027799B IT 30721/74 A IT30721/74 A IT 30721/74A IT 3072174 A IT3072174 A IT 3072174A IT 1027799 B IT1027799 B IT 1027799B
Authority
IT
Italy
Prior art keywords
complexes
electrical circuit
circuit including
main type
type supplied
Prior art date
Application number
IT30721/74A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1027799B publication Critical patent/IT1027799B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/289Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/10SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Shift Register Type Memory (AREA)
IT30721/74A 1973-12-21 1974-12-18 Circuito elettrico comprendente complessi bistabili di tipo prin oipale asservito IT1027799B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB59462/73A GB1494481A (en) 1973-12-21 1973-12-21 Electrical circuits comprising master/slave bistable arrangements

Publications (1)

Publication Number Publication Date
IT1027799B true IT1027799B (it) 1978-12-20

Family

ID=10483808

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30721/74A IT1027799B (it) 1973-12-21 1974-12-18 Circuito elettrico comprendente complessi bistabili di tipo prin oipale asservito

Country Status (8)

Country Link
US (1) US3993918A (it)
JP (1) JPS5317853B2 (it)
AU (1) AU498031B2 (it)
CA (1) CA1023011A (it)
DE (1) DE2459562B2 (it)
FR (1) FR2255709B1 (it)
GB (1) GB1494481A (it)
IT (1) IT1027799B (it)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2442773C3 (de) * 1974-09-06 1978-12-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Master-Slave-Flipflopschaltung
JPS597245B2 (ja) * 1975-12-01 1984-02-17 株式会社東芝 ハンドウタイロンリカイロ
NL7606193A (nl) * 1976-06-09 1977-12-13 Philips Nv Geintegreerde schakeling.
FR2356314A1 (fr) * 1976-06-22 1978-01-20 Radiotechnique Compelec Circuit integre logique a effet de seuil avec hysteresis
US4197470A (en) * 1976-07-15 1980-04-08 Texas Instruments Incorporated Triggerable flip-flop
US4150392A (en) * 1976-07-31 1979-04-17 Nippon Gakki Seizo Kabushiki Kaisha Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors
NL7612222A (nl) * 1976-11-04 1978-05-08 Philips Nv Geintegreerde schakeling.
US4072869A (en) * 1976-12-10 1978-02-07 Ncr Corporation Hazard-free clocked master/slave flip-flop
US4160173A (en) * 1976-12-14 1979-07-03 Tokyo Shibaura Electric Co., Ltd. Logic circuit with two pairs of cross-coupled nand/nor gates
US4085341A (en) * 1976-12-20 1978-04-18 Motorola, Inc. Integrated injection logic circuit having reduced delay
FR2404962A1 (fr) * 1977-09-28 1979-04-27 Ibm France Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur
US4163244A (en) * 1977-10-28 1979-07-31 General Electric Company Symmetrical integrated injection logic circuit
DE2805217C3 (de) * 1978-02-08 1980-11-20 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte I2 L-Schaltung fur ein Zweiphasen-Schieberegister
US4200811A (en) * 1978-05-11 1980-04-29 Rca Corporation Frequency divider circuit
JPS5570133A (en) * 1978-11-21 1980-05-27 Toshiba Corp Divider circuit
FR2458951A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Procede pour decaler les seuils integres a operateurs logiques inegres a injection
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
WO1981000332A1 (en) * 1979-07-19 1981-02-05 Motorola Inc Bistable circuit and shift register using integrated injection logic
DE2943565C2 (de) * 1979-10-29 1981-11-12 Ibm Deutschland Gmbh, 7000 Stuttgart Speicherzellennachbildung zur Referenzspannungserzeugung für Halbleiterspeicher in MTL-Technik
FR2469049A1 (fr) * 1979-10-30 1981-05-08 Ibm France Circuit comportant au moins deux dispositifs semi-conducteurs en technologie mtl presentant des temps de montee differents et circuits logiques en derivant
DE2944141A1 (de) * 1979-11-02 1981-05-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte speicheranordnung
US4491745A (en) * 1982-08-12 1985-01-01 Motorola, Inc. TTL flip-flop with clamping diode for eliminating race conditions
US4591737A (en) * 1982-12-13 1986-05-27 Advanced Micro Devices, Inc. Master-slave multivibrator with improved metastable response characteristic
US4604534A (en) * 1984-12-03 1986-08-05 International Business Machines Corporation Highly sensitive high performance sense amplifiers
EP0413038B1 (de) * 1989-08-16 1994-09-21 Deutsche ITT Industries GmbH Zweiphasengesteuertes Schieberegister in Bipolartechnik
US20040050135A1 (en) * 2002-09-18 2004-03-18 Launius William E. Axle straightening press
US7836740B2 (en) * 2002-09-18 2010-11-23 Launius Jr William E Axle straightening press

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440449A (en) * 1966-12-07 1969-04-22 Motorola Inc Gated dc coupled j-k flip-flop
US3591856A (en) * 1967-11-07 1971-07-06 Texas Instruments Inc J-k master-slave flip-flop

Also Published As

Publication number Publication date
US3993918A (en) 1976-11-23
AU498031B2 (en) 1979-02-01
AU7667774A (en) 1976-06-24
CA1023011A (en) 1977-12-20
DE2459562A1 (de) 1975-07-03
DE2459562B2 (de) 1979-11-29
JPS5317853B2 (it) 1978-06-12
GB1494481A (en) 1977-12-07
FR2255709B1 (it) 1978-03-24
FR2255709A1 (it) 1975-07-18
JPS50107846A (it) 1975-08-25

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