IN2014CN04758A - - Google Patents

Info

Publication number
IN2014CN04758A
IN2014CN04758A IN4758CHN2014A IN2014CN04758A IN 2014CN04758 A IN2014CN04758 A IN 2014CN04758A IN 4758CHN2014 A IN4758CHN2014 A IN 4758CHN2014A IN 2014CN04758 A IN2014CN04758 A IN 2014CN04758A
Authority
IN
India
Prior art keywords
segments
anode
cathode
radiation
electrode
Prior art date
Application number
Inventor
Klaus Jürgen Engel
Christoph Herrmann
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of IN2014CN04758A publication Critical patent/IN2014CN04758A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers

Abstract

The present invention relates to radiation detector (2) comprising a radiation sensitive semiconductor element (10) generating electron hole pairs in response to an irradiation with radiation (3) an anode electrode(20) arranged on a first surface (11) of the semiconductor element (10) facing away from the radiation said anode electrode (20) being segmented into anode segments (21) representing anode pixels wherein anode gaps (22) are arranged between said anode segments (21) a cathode electrode (30) arranged on a second surface (12) of the semiconductor element (10) opposite the first surface (11) and facing the radiation (3) said cathode electrode (30) being segmented into first and second cathode segments (31 32) wherein said first cathode segments (31) are substantially arranged opposite said anode segments (21) and said second cathode segments (32) are substantially arranged opposite said anode gaps (22) and a cathode terminal (41 42) providing electrical connections to said first cathode segments (31) and said second cathode segments (32) for coupling different electrical potentials to said first and second cathode segments (31 32). By such an arrangement charge sharing can be effectively reduced.
IN4758CHN2014 2011-12-13 2012-12-12 IN2014CN04758A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161569833P 2011-12-13 2011-12-13
PCT/IB2012/057212 WO2013088352A2 (en) 2011-12-13 2012-12-12 Radiation detector

Publications (1)

Publication Number Publication Date
IN2014CN04758A true IN2014CN04758A (en) 2015-09-18

Family

ID=47624380

Family Applications (1)

Application Number Title Priority Date Filing Date
IN4758CHN2014 IN2014CN04758A (en) 2011-12-13 2012-12-12

Country Status (8)

Country Link
US (1) US20140319363A1 (en)
EP (1) EP2748639B1 (en)
JP (1) JP6235480B2 (en)
CN (1) CN104024889A (en)
BR (1) BR112014014064A2 (en)
IN (1) IN2014CN04758A (en)
RU (1) RU2014128555A (en)
WO (1) WO2013088352A2 (en)

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JP6186205B2 (en) * 2013-08-15 2017-08-23 ソニーセミコンダクタソリューションズ株式会社 Imaging device and imaging apparatus
EP2876465A1 (en) * 2013-11-26 2015-05-27 Danmarks Tekniske Universitet (DTU) X-ray and gamma-ray radiation detector
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DE102014207324A1 (en) * 2014-04-16 2015-10-22 Siemens Aktiengesellschaft Direct conversion X-ray detector and CT system
CN106796302B (en) * 2014-12-05 2018-11-13 皇家飞利浦有限公司 X-ray detector equipment for angle of inclination X-ray radiation
CN107110987B (en) * 2014-12-17 2019-11-01 皇家飞利浦有限公司 Detector and method for detecting ionizing radiation
EP3235000B1 (en) * 2014-12-19 2021-01-13 G-ray Switzerland SA Method for manufacturing a monolithic cmos integrated pixel detector
US9482764B1 (en) * 2015-05-28 2016-11-01 General Electric Company Systems and methods for charge-sharing identification and correction using a single pixel
JP6808317B2 (en) * 2015-12-04 2021-01-06 キヤノン株式会社 Imaging device and imaging system
JP6808316B2 (en) 2015-12-04 2021-01-06 キヤノン株式会社 Imaging device and imaging system
CN105540526B (en) * 2015-12-29 2017-03-15 中国科学院电子学研究所 The manufacture method of monolithic composite sensing electrode, based on its Sensitive Apparatus
WO2017163149A1 (en) * 2016-03-23 2017-09-28 Koninklijke Philips N.V. Nano-material imaging detector with an integral pixel border
CN105974460B (en) * 2016-05-11 2018-12-07 天津大学 Restructural type X-ray energy spectrum detection method and detector pixel cellular construction
CN106324649B (en) * 2016-08-31 2023-09-15 同方威视技术股份有限公司 semiconductor detector
EP3306353A1 (en) * 2016-10-07 2018-04-11 Danmarks Tekniske Universitet Radiation detector
GB201703196D0 (en) 2017-02-28 2017-04-12 Univ Of Sussex X-ray and gammay-ray photodiode
EP3422051A1 (en) * 2017-06-28 2019-01-02 Koninklijke Philips N.V. Direct conversion radiation detection
WO2019019038A1 (en) * 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. X-ray detector capable of managing charge sharing at its periphery
WO2019019054A1 (en) 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector with built-in depolarization device
CN108267777B (en) * 2018-02-26 2023-07-07 张岚 Planar array pixel detector and method for orienting medium-low energy ray source
CN114902081A (en) * 2020-02-26 2022-08-12 深圳帧观德芯科技有限公司 Radiation detector
US11835666B1 (en) * 2020-07-31 2023-12-05 Redlen Technologies, Inc. Photon counting computed tomography detector with improved count rate stability and method of operating same
US11953452B2 (en) * 2021-03-01 2024-04-09 Redlen Technologies, Inc. Ionizing radiation detector with reduced street width and improved count rate stability
JP2023055071A (en) * 2021-10-05 2023-04-17 キヤノンメディカルシステムズ株式会社 Detector module, x-ray computer tomographic device, and x-ray detecting device

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US6046454A (en) * 1995-10-13 2000-04-04 Digirad Corporation Semiconductor radiation detector with enhanced charge collection
US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
DE19616545B4 (en) * 1996-04-25 2006-05-11 Siemens Ag Fast radiation detector
SE514472C2 (en) * 1999-04-14 2001-02-26 Xcounter Ab Radiation detector and apparatus for use in radiography
JP3900992B2 (en) * 2002-04-02 2007-04-04 株式会社日立製作所 Radiation detector and radiation inspection apparatus
US7145986B2 (en) * 2004-05-04 2006-12-05 General Electric Company Solid state X-ray detector with improved spatial resolution
JP4881071B2 (en) * 2006-05-30 2012-02-22 株式会社日立製作所 Radiation detector and radiation imaging apparatus equipped with the same
DE102007055676A1 (en) * 2007-11-21 2009-06-04 Siemens Ag Radiation converter for radiation detector of X-ray computer tomography, has counter electrode attached on side of conversion layer, where side is opposite to other side and conversion layer comprises deletion electrodes and contacts
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Also Published As

Publication number Publication date
CN104024889A (en) 2014-09-03
WO2013088352A2 (en) 2013-06-20
JP2015507841A (en) 2015-03-12
BR112014014064A2 (en) 2017-06-13
EP2748639B1 (en) 2019-07-17
RU2014128555A (en) 2016-02-10
EP2748639A2 (en) 2014-07-02
JP6235480B2 (en) 2017-11-22
WO2013088352A3 (en) 2013-08-08
US20140319363A1 (en) 2014-10-30

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