CN105540526B - The manufacture method of monolithic composite sensing electrode, based on its Sensitive Apparatus - Google Patents
The manufacture method of monolithic composite sensing electrode, based on its Sensitive Apparatus Download PDFInfo
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- CN105540526B CN105540526B CN201511017173.5A CN201511017173A CN105540526B CN 105540526 B CN105540526 B CN 105540526B CN 201511017173 A CN201511017173 A CN 201511017173A CN 105540526 B CN105540526 B CN 105540526B
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- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
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- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
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Abstract
The invention discloses the manufacture method of monolithic composite sensing electrode, also discloses the electrochemistry accelerometer sensitive core based on the monolithic composite sensing electrode.Monolithic composite sensing electrode of the present invention is made based on silicon chip, and after machining, there is the silicon chip anode surface and cathode plane, the anode surface to be provided with anode, and the cathode plane is provided with negative electrode.Electrochemistry accelerometer sensitive core includes two pairs of anodic-cathodics, places an O-shaped elastic seal ring, the assembling for completing two pairs of anodic-cathodics by mechanically pressing sealed mode during assembling between two monolithic combination electrodes.This method that anodic-cathodic is integrated in same silicon chip, not only can greatly reduce silicon chip quantity so as to assembling difficulty is greatly lowered, and can easily change the spacing of anode and cathode so as to optimized device performance.
Description
Technical field
The present invention relates to accelerometer technical field and MEMS (microelectromechanical systems) technical field, more particularly to a kind of
Monolithic composite sensing electrode and its manufacture method based on MEMS technology.
Background technology
Electrochemistry accelerometer is a kind of senser element that extraneous acceleration signal is changed into electric signal, its sensitive unit
Part is four electrode structures, is immersed in the mixed solution of iodine and KI, and solution is contained in what two ends were sealed by elastic membrane
Guan Li.Four electrodes are arranged according to the order of anode-cathode-K-A, during work, the one of applying on anode with negative electrode
There is electrode reaction in the voltage of individual fixation, through after a period of time, reactive ion can form stable concentration distribution.When device is received
During to extraneous acceleration effect, electrolyte meeting comparative electrode produces displacement, causes the electrochemical reaction rates occurred on electrode to be sent out
Changing, and then affect the output current (one of change is big and another diminishes) of two negative electrodes.Finally, two negative electrodes is defeated
Go out current signal through current-voltage convert and difference after the voltage signal that obtains be proportional to input acceleration signal.
Compared with the accelerometer using solid masses block-spring vibration pick-up structure such as (or cantilever beam), electrochemistry accelerates
The maximum difference of degree meter is to adopt electrolyte-elasticity membrane structure for pick-up system, therefore, it can under larger inclination angle work
Make.Additionally, making it have higher sensitivity based on the operation principle of electrochemical reaction.Therefore, electrochemistry accelerometer is on ground
Shake monitoring field has obvious advantage, especially in the occasion of this kind of not easy to install, deployment of Submarine seismic observation.
The sensitive electrode of traditional electrochemistry accelerometer is assembled with porous ceramics thin slice by gauze platinum electrode, but is adopted
With ceramic sintering process, during sintering with cooling, insulating barrier thin slice is easily broken, and thin slice is due to shrinking during cooling
The inconsistent uniformity for causing device is poor.Therefore, the cost of this technique is higher, mass production ability, limits
Electrochemistry acceleration is widely used.In order to overcome the shortcoming of Conventional processing methods, in recent years, micromechanics electronics (MEMS) technology
It is introduced into the sensitive electrode for making electrochemistry accelerometer.MEMS technology is on the basis of microelectric technique and silicon micromachined
The new technology of the multi-crossed disciplines for growing up, with miniaturization, integrated, can be mass the features such as.Occur in recent years
MEMS sensitive electrodes, had cause device sensitivity low as electrode area is less；It is right that up to seven layers silicon chip of some needs are carried out
Together, it is bonded, technology difficulty is big, efficiency is low, is not suitable for producing in enormous quantities.
Content of the invention
(1) technical problem to be solved
In order to solve the problems, such as that above-mentioned MEMS sensitive electrodes, the present invention provide a kind of monolithic composite sensing electrode and its manufacture
Method.Additionally, present invention also offers a kind of a kind of sensitive electrode device and electrochemistry based on monolithic composite sensing electrode adds
Speedometer sensitive core.
(2) technical scheme
According to the first aspect of the invention, there is provided a kind of monolithic composite sensing electrode, including silicon chip, the silicon chip has anode
Face and cathode plane, the anode surface are provided with anode, and the cathode plane is provided with negative electrode.
Preferably, the anode surface is provided with silicon dioxide layer or silicon nitride layer, the silicon dioxide layer or silicon nitride layer
Platinum layer is provided with as anode, the anode surface is provided with some anode holes.
Preferably, the cathode plane is provided with platinum layer, and the cathode plane is provided with some cathode apertures, the side wall of the cathode aperture
Also platinum layer is covered with, and the platinum layer on the side wall of platinum layer and cathode aperture on cathode plane constitutes negative electrode together；The cathode aperture with described
Anode hole is communicated, and forms the passage of electrolyte flow.
Preferably, aperture of the aperture of the cathode aperture less than the anode hole.
Preferably, quantity of the quantity of the cathode aperture more than the anode hole, and an anode hole and multiple negative electrodes
Hole communicates.
According to the second aspect of the invention, there is provided a kind of sensitive electrode device, including：Monolithic composite sensing electrode, its are wrapped
Silicon chip is included, there is the silicon chip anode surface and cathode plane, the anode surface to be provided with anode, and the cathode plane is provided with negative electrode；Two prints
Printed circuit board, printed circuit board (PCB) are assembled into the anode surface of the silicon chip of the monolithic composite sensing electrode and are connected with the anode
Connect, another printed circuit board (PCB) is assembled into the cathode plane of the silicon chip of the monolithic composite sensing electrode and is connected with the negative electrode.
Preferably, connect the pad of the anode surface printed circuit board (PCB) positioned at silicon chip and the anode by Au wire bonding
Connect, and the pad of the cathode plane printed circuit board (PCB) positioned at silicon chip is connected with the negative electrode by Au wire bonding.
According to the third aspect of the invention we, there is provided a kind of electrochemistry accelerometer sensitive core, stack including two
Sensitive electrode device as claimed in claim 6, wherein, two monolithic composite sensing electrodes constitute two yin, yang electrode pairs,
The mode of arrangement is anode-cathode-K-A；Wherein, an elastic O-ring is placed between two sensitive electrode devices,
Ensure the sealing between elastic O-ring and two sensitive electrode devices by way of mechanical compaction.
According to the fourth aspect of the invention, there is provided a kind of monolithic composite sensing electrode manufacturing method, comprise the following steps：Step
Rapid S101, covers a silicon dioxide layer in the anode surface of silicon chip；Step S102, spin coating photoresist above the silicon dioxide layer；
Step S103, exposes to photoresist and develops, and completes graphical；Step S104, sputters platinum on anode surface；Step S105, stripping
Platinum on photoresist, remaining platinum form anode；Step S106, makes photoresist mask on the platinum surface of anode；Step
S107, removes the silica that photoresist mask does not cover place；Step S108, etching silicon wafer form the anode hole of anode surface；
Step S109, from the cathode plane etching cathode hole of silicon chip until communicating to form through hole with the anode hole of anode surface；And step
S110, sputters platinum on cathode plane, forms negative electrode.
According to the fifth aspect of the invention, there is provided a kind of monolithic composite sensing electrode manufacturing method, it is characterised in that include
Following steps：Step S201, covers a silicon dioxide layer in the anode surface of silicon chip；Step S202, on silicon dioxide layer
Spin coating photoresist；Step S203, exposes to photoresist and develops, and completes graphical；Step S204, sputters platinum on anode surface；
Step S205, the platinum on stripping photoresist, remaining platinum form anode；Step S206, makes photoetching on the platinum surface of anode
Glue mask；Step S207, removes the silica that photoresist mask does not cover place；Step S208, etching silicon wafer, wherein, etching
Aperture of the aperture of photoresist mask windowing for cathode aperture during silicon chip；Step S209, exposure remove part photoresist, wherein, go
Except the aperture that the aperture of window during the photoresist of part is anode hole；Step S210, removes the silica for exposing from anode surface
Layer；Step S211, from anode surface etching silicon wafer, until silicon chip is cut through；Step S212, sputters platinum on the cathode plane of silicon chip,
Form negative electrode.
(3) beneficial effect
The invention has the beneficial effects as follows：
) silicon chip needed for electrochemistry accelerometer is reduced to two-layer, technology difficulty is significantly reduced；
) can easily change the spacing of anode and cathode, optimized device performance；
) do not need adhesion bonding between two-layer silicon chip, it is to avoid the use of liquid glue (such as silicon rubber), thus avoid
Iodine is by the problem of the caused component failure of glue absorption.
Description of the drawings
Figure 1A is front (anode surface) schematic diagram of the monolithic composite sensing electrode of the present invention.
Figure 1B is the back side (cathode plane) schematic diagram of the monolithic composite sensing electrode of the present invention.
Fig. 1 C are the cross-sectional views of (face-up) along the x-axis direction of the monolithic composite sensing electrode of the present invention.
Fig. 2A is the front of the sensitive electrode device assembled with monolithic composite sensing electrode and two PCB of the present invention
(anode surface) schematic diagram.
Fig. 2 B are the back side of the sensitive electrode device assembled with monolithic composite sensing electrode and two PCB of the present invention
(cathode plane) schematic diagram.
It is vertical that Fig. 2 C are that the sensitive electrode device assembled with two PCB with monolithic composite sensing electrode of the present invention is separated
Body figure.
Fig. 3 is the schematic diagram of the electrochemistry accelerometer sensitive core of the use sensitive electrode device assembling of the present invention.
Fig. 4 is a kind of MEMS technology flow chart of monolithic composite sensing electrode of the present invention.
Fig. 5 is another kind of MEMS technology flow chart of monolithic composite sensing electrode of the present invention.
Implication in the figures above represented by reference is：
1- monolithic composite sensing electrodes；2- anode holes；
3- cathode apertures；4- silicon；
5- silica (or silicon nitride) layer；6- platinum layers；
The sensitive electrode device that 7- monolithic composite sensings electrode is assembled with PCB；
8- printed circuit board (PCB)s (PCB)；9- (gold) lead；
10- (gold) pad；11- elastic O-rings；
12- photoresists are (such as：AZ4620)；
A- deposits silica；B- spin coating photoresists；
C- exposures and development；D- sputters platinum；
Platinum on e- stripping photoresists；F- makes photoresist mask；
G- removes silicon dioxide layer；H- etches silicon；
I- forms through hole from back-etching silicon；
J- removes part photoresist mask；K- removes silicon dioxide layer；
L- forms through hole from front etching silicon；M- is from back spatter platinum.
Specific embodiment
For making the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
Figure 1A is front (anode surface) schematic diagram of the monolithic composite sensing electrode of the present invention.
Figure 1B is the back side (cathode plane) schematic diagram of the monolithic composite sensing electrode of the present invention.
Fig. 1 C are the cross-sectional views of (face-up) along the x-axis direction of the monolithic composite sensing electrode of the present invention.
According to an embodiment of the invention, there is provided a kind of monolithic composite sensing electrode 1 as shown in figs. ia-1 c, should
Sensitive electrode is processed making based on silicon chip, cathode plane with sunny side as shown in Figure 1A and as shown in Figure 1B, the sun
Pole-face is provided with anode, and the cathode plane is provided with negative electrode, and has anode hole 2 and cathode aperture in its anode surface and cathode plane
3.
In monolithic composite sensing electrode as shown in figs. ia-1 c, it is preferable that be provided with dioxy on the anode surface of silicon chip 4
SiClx layer or silicon nitride layer 5, the silicon dioxide layer or silicon nitride layer 5 are provided with platinum layer 6 as anode.
In monolithic composite sensing electrode as shown in figs. ia-1 c, it is preferable that the cathode plane is provided with platinum layer 6, described
The side wall of cathode aperture 3 is also covered with platinum layer, and the platinum layer 6 on cathode plane and the platinum layer on the side wall of cathode aperture 3 constitute negative electrode together；Institute
State cathode aperture 3 to communicate with the anode hole 2, form the passage of electrolyte flow.Preferably, the aperture of the cathode aperture 3 is less than
The aperture of the anode hole 2.Preferably, quantity of the quantity of the cathode aperture 3 more than the anode hole 2, an and anode
Hole 2 is communicated with multiple cathode apertures 3.
Preferably, in monolithic composite sensing electrode as shown in figs. ia-1 c, anode surface is distributed with some apertures for 400 μ
The anode hole 2 of m, these anode holes 2 are communicated to form through hole with the cathode aperture 3 that the aperture at the back side is 80 μm, used as electrolyte flow
Passage.Silica or nitrogen in monolithic composite sensing electrode as shown in figs. ia-1 c, below the platinum layer 6 of anode surface
SiClx layer 5 plays the insulating effect of cathode and anode.Moreover it is preferred that the depth of cathode aperture 3 is 80 μm, the depth of anode hole 2 is
50 μm, the thickness of silica or silicon nitride layer 5 is 0.4 μm, and the thickness of platinum layer 6 is 0.4 μm, and the thickness of silicon chip 4 is 130 μm.
Fig. 2A is the front (anode of the sensitive electrode device assembled with PCB with monolithic composite sensing electrode of the present invention
Face) schematic diagram.
Fig. 2 B are the back side (negative electrodes of the sensitive electrode device assembled with PCB with monolithic composite sensing electrode of the present invention
Face) schematic diagram.
It is vertical that Fig. 2 C are that the sensitive electrode device assembled with two PCB with monolithic composite sensing electrode of the present invention is separated
Body figure.
Fig. 2A -2C are the schematic diagrames of sensitive electrode device (also referred to as organizing loading electrode), according to one embodiment of the present invention
A kind of formula, there is provided sensitive electrode device, including：Monolithic composite sensing electrode 1, which includes silicon chip, the silicon chip have anode surface and
Cathode plane, the anode surface are provided with anode, and the cathode plane is provided with negative electrode；Two printed circuit board (PCB)s 8, a printed circuit board (PCB) 8
It is assembled into the anode surface of the silicon chip of the monolithic composite sensing electrode 1 and is connected with the anode, 8 groups of another printed circuit board (PCB)
It is attached to the cathode plane of the silicon chip of the monolithic composite sensing electrode 1 and is connected with the negative electrode.
Preferably, connect the pad of the anode surface printed circuit board (PCB) 8 positioned at silicon chip and the anode by Au wire bonding
Connect, and the pad of the cathode plane printed circuit board (PCB) positioned at silicon chip is connected with the negative electrode by Au wire bonding.Preferably, single
The anode surface (front) of piece composite sensing electrode 1 all passes through (gold) of (gold) lead 9 and printed circuit board (PCB) 8 with cathode plane (back side)
Pad 10 is connected.
Fig. 3 is the schematic diagram of the electrochemistry accelerometer sensitive core of the use sensitive electrode device assembling of the present invention.
It is the stereogram of electrochemistry accelerometer sensitive core on the left of Fig. 3, is electrochemistry accelerometer sensitive core on the right side of Fig. 3
The exploded perspective view of the heart.According to an embodiment of the invention, electrochemistry accelerometer sensitive core as shown in Figure 3 includes
The sensitive electrode device 7 (can also be called a group loading electrode) of two monolithic composite sensing electrodes based on MEMS technology of the invention
With an elastic O-ring 11.
Specifically, accelerometer sensitive core of the invention includes two sensitive electrode devices 7 for stacking, its
In, two (in sensitive electrode device 7) monolithic composite sensing electrodes constitute two yin, yang electrode pairs, and the mode of arrangement is sun
Pole-cathode-cathode-anode；Wherein, an elastic O-ring 11 is placed between two sensitive electrode devices 7, by machinery pressure
Tight mode ensures the sealing between elastic O-ring 11 and two sensitive electrode devices 7.
In the accelerometer sensitive core of the present invention, the silicon chip needed for electrochemistry accelerometer sensitive core is reduced to
Two-layer, technology difficulty are significantly reduced.Furthermore it is possible to easily change the spacing of anode and cathode, optimized device performance.And, two-layer
Adhesion bonding is not needed between silicon chip, it is to avoid the use of liquid glue (such as silicon rubber), thus avoid iodine and adsorbed by glue and draw
The problem of the component failure for rising.
Fig. 4 is a kind of MEMS technology flow chart of monolithic composite sensing electrode of the present invention.
As shown in figure 4, according to an embodiment of the invention, there is provided a kind of monolithic composite sensing electrode manufacturing method,
Comprise the following steps：
Step S101, covers a silicon dioxide layer in the anode surface of silicon chip, as shown in a in Fig. 4.
Preferably, with plasma enhanced chemical vapor deposition (PECVD) side on the high resistant silicon chip 4 that thickness is 130 μm
Method grows silicon dioxide layer 5.
Step S102, spin coating photoresist 12 above the silicon dioxide layer 5, as shown in b in Fig. 4.
Step S103, exposes to photoresist 12 and develops, and completes graphically, as shown in c in Fig. 4.
Step S104, sputters platinum 6, on anode surface as shown in d in Fig. 4.
Step S105, the platinum on stripping photoresist, remaining platinum form anode, as shown in e in Fig. 4.
Step S106, makes photoresist mask, on the platinum surface of anode as shown in f in Fig. 4.
Step S107, removes the silica 5 that photoresist mask does not cover place, as shown in g in Fig. 4.
Preferably, silica 5 is removed with reactive ion etching (RIE) method.
Step S108, etching silicon wafer form the anode hole of anode surface, as shown in h in Fig. 4.
Preferably, with deep reaction ion etching (DRIE) method etching silicon wafer 4, etching depth is 50 μm, forms anode table
The anode hole 2 in face.
Step S109, from the cathode plane etching cathode hole 3 of silicon chip until communicate with the anode hole 2 of anode surface to be formed logical
Hole, as shown in i in Fig. 4.
Preferably, cathode aperture 3 is etched with DRIE methods until cutting through to form through hole from cathode plane.
Step S110, sputters platinum on cathode plane, forms negative electrode, as shown in m in Fig. 4.
Fig. 5 is another kind of MEMS technology flow chart of monolithic composite sensing electrode of the present invention.
As shown in figure 5, according to an embodiment of the invention, there is provided a kind of monolithic composite sensing electrode manufacturing method,
Comprise the following steps：
Step S201, covers a silicon dioxide layer 5 in the anode surface of silicon chip 4, as shown in a in Fig. 5.
Preferably, layer of silicon dioxide 5 is grown with PECVD methods on the high resistant silicon chip 4 that thickness is 130 μm.
Step S202, spin coating photoresist 12 above the silicon dioxide layer 5, as shown in b in Fig. 5.
Step S203, exposes to photoresist 12 and develops, and completes graphically, as shown in c in Fig. 5.
Step S204, sputters platinum 6, on anode surface as shown in d in Fig. 5.
Step S205, the platinum on stripping photoresist 12, remaining platinum form anode, as shown in e in Fig. 5.
Step S206, makes photoresist mask, on the platinum surface of anode as shown in f in Fig. 5.
Step S207, removes the silica 5 that photoresist mask does not cover place, as shown in g in Fig. 5.
Preferably, silica 5 is removed with RIE methods.
Step S208, etching silicon wafer 4, wherein, hole of the aperture of photoresist mask windowing for cathode aperture during etching silicon wafer 4
Footpath, as shown in h in Fig. 5.
Preferably, with DRIE methods etching silicon wafer 4, etching depth is 80 μm.
Step S209, exposure remove part photoresist, and wherein, when removing part photoresist, the aperture of window is anode hole
Aperture, as shown in j in Fig. 5.
Step S210, removes the silicon dioxide layer 5 (k) for exposing from anode surface.Preferably, from anode surface RIE methods
Silicon dioxide layer 5 is removed, as shown in k in Fig. 5.
Step S211, from anode surface etching silicon wafer 4, until silicon chip 4 is cut through, as shown in l in Fig. 5.
Preferably, from anode surface DRIE methods etching silicon wafer 4, until silicon chip 4 is cut through.
Step S212, from back spatter platinum 6, forms negative electrode, as shown in m in Fig. 5.
Certainly, alternatively, plasma enhanced chemical vapor deposition (PECVD) the growth silica can be by warm
Oxidation is completed；Alternatively, it is also possible to generate silicon nitride as insulating barrier.Additionally, above-mentioned pore size, etching depth, titanium dioxide
Thickness of silicon layer etc. can be appropriately adjusted.
The invention discloses a kind of electrochemistry accelerometer monolithic composite sensing electrode and its manufacture based on MEMS technology
Method.The method produces two electrodes on single silicon chip, is used separately as anode and negative electrode, forms monolithic composite sensing electricity
Pole.Electrochemistry accelerometer sensitive core includes two pairs of anodic-cathodics, places one during assembling between two monolithic combination electrodes
Individual O-shaped elastic seal ring, the assembling that two pairs of anodic-cathodics are completed by mechanically pressing sealed mode.Combination electrode adopts MEMS
Technology is made, including deep etching process (etching through hole forms the passage of electrolyte flow), sputtering technology (in substrate disk
Both sides splash-proofing sputtering metals make anodic-cathodic), pecvd process or thermal oxidation technology (making insulating barrier in disk surfaces) etc..
This method that anodic-cathodic is integrated in same silicon chip, not only can greatly reduce silicon chip quantity so as to group is greatly lowered
Dress difficulty, and can easily change the spacing of anode and cathode so as to optimized device performance.When two sensitive electrode devices are assembled,
Place an elastic O-ring therebetween, sealed using mechanical compaction mode, due to not using liquid glue, not only carried
High packaging efficiency and device is avoided as electrolyte is by the caused Problem of Failure of glue absorption.
Particular embodiments described above, has been carried out to the purpose of the present invention, technical scheme and beneficial effect further in detail
Describe bright, the be should be understood that specific embodiment that the foregoing is only the present invention in detail, be not limited to the present invention, all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements that is done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (8)
1. a kind of electrochemistry accelerometer sensitive core, it is characterised in that including two sensitive electrode devices for stacking,
The sensitive electrode device includes：Monolithic composite sensing electrode, which includes silicon chip, and the silicon chip has anode surface and negative electrode
Face, the anode surface are provided with anode, and the cathode plane is provided with negative electrode；Two printed circuit board (PCB)s, a printed circuit board (PCB) are assembled into
The anode surface of the silicon chip of the monolithic composite sensing electrode is simultaneously connected with the anode, and another printed circuit board (PCB) is assembled into described
The cathode plane of the silicon chip of monolithic composite sensing electrode is simultaneously connected with the negative electrode；
Wherein, two monolithic composite sensing electrodes constitute two yin, yang electrode pairs, the mode of arrangement be anode-cathode-negative electrode-
Anode；Wherein, an elastic O-ring is placed between two sensitive electrode devices, ensure elastic O by way of mechanical compaction
Sealing between shape circle and two sensitive electrode devices.
2. electrochemistry accelerometer sensitive core according to claim 1, it is characterised in that the sensitive electrode device
In, the pad of the anode surface printed circuit board (PCB) positioned at silicon chip is connected with the anode, and pass through spun gold
Ball bond makes the pad of the cathode plane printed circuit board (PCB) positioned at silicon chip be connected with the negative electrode.
3. electrochemistry accelerometer sensitive core according to claim 1, it is characterised in that the sensitive electrode device
In composite sensing electrode, the anode surface is provided with silicon dioxide layer or silicon nitride layer, the silicon dioxide layer or silicon nitride layer
Platinum layer is provided with as anode, the anode surface is provided with some anode holes.
4. electrochemistry accelerometer sensitive core according to claim 3, it is characterised in that the sensitive electrode device
In composite sensing electrode, the cathode plane is provided with platinum layer, and the cathode plane is provided with some cathode apertures, the side wall of the cathode aperture
Also platinum layer is covered with, and the platinum layer on the side wall of platinum layer and cathode aperture on cathode plane constitutes negative electrode together；The cathode aperture with described
Anode hole is communicated, and forms the passage of electrolyte flow.
5. electrochemistry accelerometer sensitive core according to claim 4, it is characterised in that the sensitive electrode device
In composite sensing electrode, the aperture of the cathode aperture is less than the aperture of the anode hole.
6. electrochemistry accelerometer sensitive core according to claim 5, it is characterised in that the sensitive electrode device
In composite sensing electrode, the quantity of the cathode aperture is more than the quantity of the anode hole, and an anode hole and multiple negative electrodes
Hole communicates.
7. a kind of monolithic composite sensing electrode manufacturing method, it is characterised in that comprise the following steps：
Step S101, covers a silicon dioxide layer in the anode surface of silicon chip；
Step S102, spin coating photoresist above the silicon dioxide layer；
Step S103, exposes to photoresist and develops, and completes graphical；
Step S104, sputters platinum on anode surface；
Step S105, the platinum on stripping photoresist, remaining platinum form anode；
Step S106, makes photoresist mask on the platinum surface of anode；
Step S107, removes the silica that photoresist mask does not cover place；
Step S108, etching silicon wafer form the anode hole of anode surface；
Step S109, from the cathode plane etching cathode hole of silicon chip until communicating to form through hole with the anode hole of anode surface；And
Step S110, sputters platinum on cathode plane, forms negative electrode.
8. a kind of monolithic composite sensing electrode manufacturing method, it is characterised in that comprise the following steps：
Step S201, covers a silicon dioxide layer in the anode surface of silicon chip；
Step S202, spin coating photoresist above the silicon dioxide layer；
Step S203, exposes to photoresist and develops, and completes graphical；
Step S204, sputters platinum on anode surface；
Step S205, the platinum on stripping photoresist, remaining platinum form anode；
Step S206, makes photoresist mask on the platinum surface of anode；
Step S207, removes the silica that photoresist mask does not cover place；
Step S208, etching silicon wafer, wherein, aperture of the aperture of photoresist mask windowing for cathode aperture during etching silicon wafer；
Step S209, exposure remove part photoresist, wherein, hole of the aperture of window for anode hole when removing part photoresist
Footpath；
Step S210, removes the silicon dioxide layer for exposing from anode surface；
Step S211, from anode surface etching silicon wafer, until silicon chip is cut through；
Step S212, sputters platinum on the cathode plane of silicon chip, forms negative electrode.
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| CN113739901B (en) * | 2021-09-07 | 2022-12-23 | 中国科学院空天信息创新研究院 | Four-electrode integrated sensitive electrode of MEMS (micro electro mechanical System) electrochemical vibration sensor and manufacturing method thereof |
| CN113687101B (en) * | 2021-09-07 | 2023-07-25 | 中国科学院空天信息创新研究院 | Electrochemical sensitive electrode, manufacturing method and angular acceleration sensor using same |
| CN113671213B (en) * | 2021-09-08 | 2022-12-27 | 中国科学院空天信息创新研究院 | MEMS electrochemical vibration sensor sensitive electrode based on silicon conduction and manufacturing method thereof |
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| CN2745228Y (en) * | 2004-11-18 | 2005-12-07 | 胜光科技股份有限公司 | Bipolar fuel cell plate |
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| JP2014053763A (en) * | 2012-09-07 | 2014-03-20 | Seiko Epson Corp | Method of manufacturing electronic device and electronic device |
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