IL284987A - Electrodeposition of a cobalt or copper alloy, and use in microelectronics - Google Patents
Electrodeposition of a cobalt or copper alloy, and use in microelectronicsInfo
- Publication number
- IL284987A IL284987A IL284987A IL28498721A IL284987A IL 284987 A IL284987 A IL 284987A IL 284987 A IL284987 A IL 284987A IL 28498721 A IL28498721 A IL 28498721A IL 284987 A IL284987 A IL 284987A
- Authority
- IL
- Israel
- Prior art keywords
- microelectronics
- electrodeposition
- cobalt
- copper alloy
- alloy
- Prior art date
Links
- 229910000531 Co alloy Inorganic materials 0.000 title 1
- 229910000881 Cu alloy Inorganic materials 0.000 title 1
- 239000010941 cobalt Substances 0.000 title 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title 1
- 238000004070 electrodeposition Methods 0.000 title 1
- 238000004377 microelectronic Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1901264A FR3092589A1 (en) | 2019-02-08 | 2019-02-08 | Electroplating of a cobalt alloy and use in microelectronics |
FR2000297A FR3092590A1 (en) | 2019-02-08 | 2020-01-14 | Electroplating of a cobalt or copper alloy, and use in microelectronics |
PCT/EP2020/053018 WO2020161256A1 (en) | 2019-02-08 | 2020-02-06 | Electrodeposition of a cobalt or copper alloy, and use in microelectronics |
Publications (1)
Publication Number | Publication Date |
---|---|
IL284987A true IL284987A (en) | 2021-09-30 |
Family
ID=67875503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL284987A IL284987A (en) | 2019-02-08 | 2021-07-20 | Electrodeposition of a cobalt or copper alloy, and use in microelectronics |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3921460A1 (en) |
KR (1) | KR102562159B1 (en) |
CN (1) | CN113383115A (en) |
FR (2) | FR3092589A1 (en) |
IL (1) | IL284987A (en) |
TW (1) | TW202045778A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3115046B1 (en) * | 2020-10-09 | 2023-12-01 | Aveni | Process for manufacturing 3D-NAND memory |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2317153A (en) * | 1938-07-14 | 1943-04-20 | Chicago Dev Co | Process for the electrodeposition of manganese |
JPH0244911B2 (en) * | 1986-10-31 | 1990-10-05 | Uemura Kogyo Kk | DENKIMETSUKIHOHO |
US7135404B2 (en) * | 2002-01-10 | 2006-11-14 | Semitool, Inc. | Method for applying metal features onto barrier layers using electrochemical deposition |
KR100455083B1 (en) * | 2000-12-22 | 2004-11-08 | 주식회사 포스코 | Zn-Co-W alloy electroplated steel sheet with excellent corrosion resistance and welding property and electrolyte therefor |
KR100851229B1 (en) * | 2001-12-26 | 2008-08-07 | 주식회사 포스코 | Zn-Co-W Electrolyte For Preventing Anode Passive Film |
JP2004068138A (en) * | 2002-08-09 | 2004-03-04 | Nippon Parkerizing Co Ltd | Black alloy plating solution |
EP1969160B1 (en) * | 2006-01-06 | 2011-04-27 | Enthone, Incorporated | Electrolyte and process for depositing a matt metal layer |
US20120141667A1 (en) * | 2010-07-16 | 2012-06-07 | Applied Materials, Inc. | Methods for forming barrier/seed layers for copper interconnect structures |
EP2565297A3 (en) * | 2011-08-30 | 2013-04-24 | Rohm and Haas Electronic Materials LLC | Adhesion promotion of cyanide-free white bronze |
US9997457B2 (en) | 2013-12-20 | 2018-06-12 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
CN104046776A (en) * | 2014-06-16 | 2014-09-17 | 天津市茂联科技有限公司 | Process for recovering valuable metals from high-iron alloys |
US20160309596A1 (en) * | 2015-04-15 | 2016-10-20 | Applied Materials, Inc. | Methods for forming cobalt interconnects |
JP6903061B2 (en) * | 2016-01-21 | 2021-07-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Plating process and chemistry of through silicon vias |
CN108342569A (en) * | 2017-12-29 | 2018-07-31 | 衡阳市坤泰化工实业有限公司 | Method of the foreign metal cobalt to obtain zinc-containing solution is removed from crude zinc raw material |
-
2019
- 2019-02-08 FR FR1901264A patent/FR3092589A1/en active Pending
-
2020
- 2020-01-14 FR FR2000297A patent/FR3092590A1/en active Pending
- 2020-02-06 EP EP20702499.3A patent/EP3921460A1/en active Pending
- 2020-02-06 KR KR1020217028826A patent/KR102562159B1/en active IP Right Grant
- 2020-02-06 CN CN202080012535.4A patent/CN113383115A/en active Pending
- 2020-02-07 TW TW109103941A patent/TW202045778A/en unknown
-
2021
- 2021-07-20 IL IL284987A patent/IL284987A/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20210124422A (en) | 2021-10-14 |
CN113383115A (en) | 2021-09-10 |
EP3921460A1 (en) | 2021-12-15 |
FR3092590A1 (en) | 2020-08-14 |
TW202045778A (en) | 2020-12-16 |
FR3092589A1 (en) | 2020-08-14 |
KR102562159B1 (en) | 2023-08-01 |
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