IL121075A0 - Optoelectronic material its manufacture and a device using it - Google Patents

Optoelectronic material its manufacture and a device using it

Info

Publication number
IL121075A0
IL121075A0 IL12107597A IL12107597A IL121075A0 IL 121075 A0 IL121075 A0 IL 121075A0 IL 12107597 A IL12107597 A IL 12107597A IL 12107597 A IL12107597 A IL 12107597A IL 121075 A0 IL121075 A0 IL 121075A0
Authority
IL
Israel
Prior art keywords
medium
target
reaction chamber
semiconductor
particles dispersed
Prior art date
Application number
IL12107597A
Other versions
IL121075A (en
Original Assignee
Matsushita Electric Ind Co Ltd
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15784096A external-priority patent/JP3196644B2/en
Priority claimed from JP31595796A external-priority patent/JP3405099B2/en
Application filed by Matsushita Electric Ind Co Ltd, Matsushita Electronics Corp filed Critical Matsushita Electric Ind Co Ltd
Priority to IL14477097A priority Critical patent/IL144770A/en
Priority to IL14477197A priority patent/IL144771A/en
Publication of IL121075A0 publication Critical patent/IL121075A0/en
Priority to IL14477001A priority patent/IL144770A0/en
Priority to IL14477101A priority patent/IL144771A0/en
Publication of IL121075A publication Critical patent/IL121075A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/258—Alkali metal or alkaline earth metal or compound thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)
  • Luminescent Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Bipolar Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Led Device Packages (AREA)
  • Glass Compositions (AREA)

Abstract

This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate. <IMAGE>
IL12107597A 1996-06-19 1997-06-13 Optoelectronic material, its manufacture and a device using it IL121075A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IL14477097A IL144770A (en) 1996-06-19 1997-06-13 Optoelectronic material, its manufacture and a device using it
IL14477197A IL144771A (en) 1996-06-19 1997-06-13 Optoelectric material, its manufacture and a device using it
IL14477001A IL144770A0 (en) 1996-06-19 2001-08-07 Optoelectronic materials, its manufacture and a device using it
IL14477101A IL144771A0 (en) 1996-06-19 2001-08-07 Optoelectronic material, its manufacture and a device using it

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15784096A JP3196644B2 (en) 1995-06-26 1996-06-19 Method for manufacturing optoelectronic material, and applied element and apparatus using the optoelectronic material
JP31595796A JP3405099B2 (en) 1996-11-27 1996-11-27 Color sensor
JP31593496 1996-11-27

Publications (2)

Publication Number Publication Date
IL121075A0 true IL121075A0 (en) 1997-11-20
IL121075A IL121075A (en) 2001-12-23

Family

ID=27321243

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12107597A IL121075A (en) 1996-06-19 1997-06-13 Optoelectronic material, its manufacture and a device using it

Country Status (13)

Country Link
US (3) US6239453B1 (en)
EP (1) EP0853334B1 (en)
KR (1) KR100291456B1 (en)
CN (2) CN1146060C (en)
AT (1) ATE332572T1 (en)
AU (1) AU709692B2 (en)
CA (1) CA2228507C (en)
DE (1) DE69736272T2 (en)
ID (1) ID17055A (en)
IL (1) IL121075A (en)
MY (2) MY125551A (en)
RU (1) RU2152106C1 (en)
WO (1) WO1997049119A1 (en)

Families Citing this family (123)

* Cited by examiner, † Cited by third party
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