IL118514A - Simultaneous two color ir detector having common middle layer metallic contact - Google Patents

Simultaneous two color ir detector having common middle layer metallic contact

Info

Publication number
IL118514A
IL118514A IL11851496A IL11851496A IL118514A IL 118514 A IL118514 A IL 118514A IL 11851496 A IL11851496 A IL 11851496A IL 11851496 A IL11851496 A IL 11851496A IL 118514 A IL118514 A IL 118514A
Authority
IL
Israel
Prior art keywords
simultaneous
detector
color
middle layer
metallic contact
Prior art date
Application number
IL11851496A
Other languages
English (en)
Other versions
IL118514A0 (en
Original Assignee
Santa Barbara Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center
Publication of IL118514A0 publication Critical patent/IL118514A0/xx
Publication of IL118514A publication Critical patent/IL118514A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
IL11851496A 1995-06-07 1996-05-31 Simultaneous two color ir detector having common middle layer metallic contact IL118514A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/486,491 US5581084A (en) 1995-06-07 1995-06-07 Simultaneous two color IR detector having common middle layer metallic contact

Publications (2)

Publication Number Publication Date
IL118514A0 IL118514A0 (en) 1996-09-12
IL118514A true IL118514A (en) 1999-06-20

Family

ID=23932096

Family Applications (1)

Application Number Title Priority Date Filing Date
IL11851496A IL118514A (en) 1995-06-07 1996-05-31 Simultaneous two color ir detector having common middle layer metallic contact

Country Status (4)

Country Link
US (1) US5581084A (ja)
EP (1) EP0747962A3 (ja)
JP (1) JP2721146B2 (ja)
IL (1) IL118514A (ja)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0861504A1 (en) * 1995-11-15 1998-09-02 Lockheed-Martin IR Imaging Systems A dual-band multi-level microbridge detector
US5731621A (en) * 1996-03-19 1998-03-24 Santa Barbara Research Center Three band and four band multispectral structures having two simultaneous signal outputs
US5721429A (en) * 1996-07-23 1998-02-24 Hughes Electronics Self-focusing detector pixel structure having improved sensitivity
FR2756667B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques bispectral
US5751005A (en) * 1996-12-20 1998-05-12 Raytheon Company Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays
DE19740612B4 (de) * 1997-08-30 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung von Bildsensorelementen
EP1013076B1 (de) 1997-09-12 2001-02-28 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Bildsensorelemente
US6147349A (en) * 1998-07-31 2000-11-14 Raytheon Company Method for fabricating a self-focusing detector pixel and an array fabricated in accordance with the method
US6465860B2 (en) * 1998-09-01 2002-10-15 Kabushiki Kaisha Toshiba Multi-wavelength semiconductor image sensor and method of manufacturing the same
DE10037103A1 (de) 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
US6657194B2 (en) * 2001-04-13 2003-12-02 Epir Technologies, Inc. Multispectral monolithic infrared focal plane array detectors
US6885002B1 (en) 2001-08-31 2005-04-26 Raytheon Company IRFPA ROIC with dual TDM reset integrators and sub-frame averaging functions per unit cell
US6566723B1 (en) * 2002-01-10 2003-05-20 Agilent Technologies, Inc. Digital color image sensor with elevated two-color photo-detector and related circuitry
US6774348B2 (en) * 2002-06-04 2004-08-10 Honeywell International Inc. Method and apparatus for monitoring the power of a multi-wavelength optical signal
DE10239506A1 (de) * 2002-08-28 2004-03-18 Infineon Technologies Ag Sensoranordnung zum Erfassen einer Strahlung, Computertomograph mit dieser Sensoranordnung und zugehöriges Herstellungsverfahren
FR2855655B1 (fr) 2003-05-26 2005-08-19 Commissariat Energie Atomique Detecteur de rayonnement infrarouge photovoltaique a grille conductrice independante et tridimensionnelle
FR2868602B1 (fr) * 2004-04-05 2006-05-26 Commissariat Energie Atomique Circuit de detection photonique a structure mesa
EP1782475A1 (en) * 2004-06-10 2007-05-09 BAE Systems PLC Two colour photon detector
CN100466302C (zh) * 2004-10-26 2009-03-04 中国科学院上海技术物理研究所 碲镉汞红外双色焦平面探测器列阵芯片
WO2007041428A2 (en) * 2005-09-30 2007-04-12 Bae Systems Information And Electronic Systems Integration Inc. Process to fabricate integrated mwir emitter
US7629582B2 (en) * 2006-10-24 2009-12-08 Raytheon Company Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors
US8093559B1 (en) * 2008-12-02 2012-01-10 Hrl Laboratories, Llc Methods and apparatus for three-color infrared sensors
US8669588B2 (en) * 2009-07-06 2014-03-11 Raytheon Company Epitaxially-grown position sensitive detector
US7928389B1 (en) 2009-08-20 2011-04-19 Hrl Laboratories, Llc Wide bandwidth infrared detector and imager
US8946839B1 (en) 2009-08-20 2015-02-03 Hrl Laboratories, Llc Reduced volume infrared detector
US7977637B1 (en) 2009-08-20 2011-07-12 Hrl Laboratories, Llc Honeycomb infrared detector
CN101726364B (zh) * 2009-11-18 2011-04-27 中国科学院上海技术物理研究所 红外焦平面列阵器件的内吸收率增强方法
FR2965105B1 (fr) * 2010-09-16 2013-06-14 Commissariat Energie Atomique Detecteur bispectral multicouche a photodiodes
US8441087B2 (en) 2011-07-22 2013-05-14 Raytheon Company Direct readout focal plane array
US10115764B2 (en) 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
FR2982706A1 (fr) * 2011-11-15 2013-05-17 Soc Fr Detecteurs Infrarouges Sofradir Dispositif de detection de deux couleurs differentes a conditions de fonctionnement ameliorees
FR2995726B1 (fr) * 2012-09-17 2014-10-17 Soc Fr Detecteurs Infrarouges Sofradir Dispositif de detection de deux couleurs differentes a conditions de fonctionnement ameliorees
US9887309B2 (en) 2012-12-13 2018-02-06 The Board of Regents of the University of Okalahoma Photovoltaic lead-salt semiconductor detectors
CN103187424B (zh) * 2013-01-31 2015-07-29 中国科学院上海技术物理研究所 无源电路耦合的环孔型碲镉汞芯片
US9490292B1 (en) 2013-03-15 2016-11-08 Hrl Laboratories, Llc Dual-band detector array
US10903261B1 (en) 2013-03-15 2021-01-26 Hrl Laboratories, Llc Triple output, dual-band detector
JP6123397B2 (ja) * 2013-03-18 2017-05-10 富士通株式会社 撮像装置
CN103681937B (zh) * 2013-11-21 2015-11-25 中国科学院上海技术物理研究所 基于光子晶体限光效应的焦平面探测器结构的设计方法
FR3042310B1 (fr) * 2015-10-12 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium
US10020331B1 (en) 2016-07-21 2018-07-10 Hrl Laboratories, Llc Dual-band lateral-effect position sensor
CN106384751A (zh) * 2016-10-14 2017-02-08 中国电子科技集团公司第十研究所 一种硅基短/中波叠层双色碲镉汞材料及其制备方法
JP6863093B2 (ja) 2017-06-01 2021-04-21 住友電気工業株式会社 受光素子およびその製造方法
CN109216485B (zh) * 2017-06-29 2020-11-27 中国科学院苏州纳米技术与纳米仿生研究所 红外探测器及其制备方法
EP3917873A4 (en) 2019-02-01 2022-12-14 The University of Chicago MULTI-BAND INFRARED IMAGING USING STACKED COLLOIDAL QUANTUM DOT PHOTODIODES
EP3953970A4 (en) * 2019-04-11 2023-02-08 HRL Laboratories LLC SIMULTANEOUS DUAL BAND IMAGE SENSORS
US11781914B2 (en) 2021-03-04 2023-10-10 Sivananthan Laboratories, Inc. Computational radiation tolerance for high quality infrared focal plane arrays

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101832A (en) * 1979-01-30 1980-08-04 Fujitsu Ltd Infrared detector
US4224520A (en) * 1979-07-13 1980-09-23 The United States Of America As Represented By The Secretary Of The Navy Room temperature two color infrared detector
JPS5791557A (en) * 1980-11-28 1982-06-07 Fujitsu Ltd Manufacture of infrared ray detector
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
DE3710986A1 (de) * 1987-04-01 1988-10-20 Messerschmitt Boelkow Blohm Lichtempfindliche detektorvorrichtung
US4885619A (en) * 1987-08-24 1989-12-05 Santa Barbara Research Center HgCdTe MIS device having a CdTe heterojunction
US5113076A (en) * 1989-12-19 1992-05-12 Santa Barbara Research Center Two terminal multi-band infrared radiation detector
US5149956A (en) * 1991-06-12 1992-09-22 Santa Barbara Research Center Two-color radiation detector array and methods of fabricating same

Also Published As

Publication number Publication date
IL118514A0 (en) 1996-09-12
EP0747962A3 (en) 1997-06-04
US5581084A (en) 1996-12-03
EP0747962A2 (en) 1996-12-11
JP2721146B2 (ja) 1998-03-04
JPH09107121A (ja) 1997-04-22

Similar Documents

Publication Publication Date Title
IL118514A0 (en) Simultaneous two color IR detector having common middle layer metallic contact
AU7015596A (en) Surface plasmon resonance-mass spectrometry
EP0732843A3 (en) Color halftone combination
GB9622041D0 (en) Armouring
AU3062697A (en) Luminance-priority color sensor
GB9523578D0 (en) Demodulator
GB9519888D0 (en) Electrically isolating coating layers
GB2299938B (en) Carpet fitting
GB2297689B (en) Floor covering
GB2306494B (en) Synthetic surface
GB2299819B (en) Flooring
GB2305844B (en) Foodstuff
AU4250397A (en) Enteric neural peptide
GB2299381B (en) Slide surface member
GB2334558B8 (en) Slide surface member
GB2304136B (en) Groundwork
GB9624620D0 (en) Covering holes
GB9520747D0 (en) Decorating surfaces
KR0164579B1 (en) Semi-wide tv
GB9518909D0 (en) Flooring
GB2333942B (en) Foodstuff
PL312239A1 (en) Mosaic
HRP950315B1 (en) Thiny mosaic
GB9402852D0 (en) Surface covering
ZA968083B (en) Carpet

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees