HK41890A - Semiconductor device and fabrication process thereof - Google Patents

Semiconductor device and fabrication process thereof

Info

Publication number
HK41890A
HK41890A HK418/90A HK41890A HK41890A HK 41890 A HK41890 A HK 41890A HK 418/90 A HK418/90 A HK 418/90A HK 41890 A HK41890 A HK 41890A HK 41890 A HK41890 A HK 41890A
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
fabrication process
fabrication
semiconductor
Prior art date
Application number
HK418/90A
Inventor
Muratajun
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK41890A publication Critical patent/HK41890A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
HK418/90A 1983-12-23 1990-05-31 Semiconductor device and fabrication process thereof HK41890A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58241963A JPS60134466A (en) 1983-12-23 1983-12-23 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
HK41890A true HK41890A (en) 1990-06-08

Family

ID=17082176

Family Applications (1)

Application Number Title Priority Date Filing Date
HK418/90A HK41890A (en) 1983-12-23 1990-05-31 Semiconductor device and fabrication process thereof

Country Status (4)

Country Link
JP (1) JPS60134466A (en)
KR (1) KR850005138A (en)
GB (1) GB2151847B (en)
HK (1) HK41890A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1235824A (en) * 1985-06-28 1988-04-26 Vu Q. Ho Vlsi mosfet circuits using refractory metal and/or refractory metal silicide
GB2179792B (en) * 1985-08-28 1988-10-12 Mitsubishi Electric Corp Method for fabricating bipolar transistor in integrated circuit
JPH0799738B2 (en) * 1985-09-05 1995-10-25 三菱電機株式会社 Method for manufacturing semiconductor device
WO1989011732A1 (en) * 1988-05-24 1989-11-30 Micron Technology, Inc. Tisi2 local interconnects
WO1989011733A1 (en) * 1988-05-24 1989-11-30 Micron Technology, Inc. Alpha shielded tisi2 local interconnects
US5053349A (en) * 1988-06-16 1991-10-01 Kabushiki Kaisha Toshiba Method for interconnecting semiconductor devices
US5231042A (en) * 1990-04-02 1993-07-27 National Semiconductor Corporation Formation of silicide contacts using a sidewall oxide process
US5107321A (en) * 1990-04-02 1992-04-21 National Semiconductor Corporation Interconnect method for semiconductor devices
US5219784A (en) * 1990-04-02 1993-06-15 National Semiconductor Corporation Spacer formation in a bicmos device
US5254874A (en) * 1990-05-02 1993-10-19 Quality Semiconductor Inc. High density local interconnect in a semiconductor circuit using metal silicide
US5223456A (en) * 1990-05-02 1993-06-29 Quality Semiconductor Inc. High density local interconnect in an integrated circit using metal silicide
JP2757927B2 (en) * 1990-06-28 1998-05-25 インターナショナル・ビジネス・マシーンズ・コーポレイション Method of interconnecting spaced silicon regions on a semiconductor substrate
EP0463373A3 (en) * 1990-06-29 1992-03-25 Texas Instruments Incorporated Local interconnect using a material comprising tungsten
US5124280A (en) * 1991-01-31 1992-06-23 Sgs-Thomson Microelectronics, Inc. Local interconnect for integrated circuits
JPH0520771A (en) * 1991-07-11 1993-01-29 Mitsubishi Electric Corp Array type disk device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
DE2815605C3 (en) * 1978-04-11 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Semiconductor memory with control lines of high conductivity
US4276557A (en) * 1978-12-29 1981-06-30 Bell Telephone Laboratories, Incorporated Integrated semiconductor circuit structure and method for making it
NL186352C (en) * 1980-08-27 1990-11-01 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
JPS5780739A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Also Published As

Publication number Publication date
GB2151847B (en) 1987-11-25
KR850005138A (en) 1985-08-21
JPS60134466A (en) 1985-07-17
GB8431761D0 (en) 1985-01-30
GB2151847A (en) 1985-07-24

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