HK40290A - Semiconductor integrated circuit device with power consumption reducing arrangement - Google Patents

Semiconductor integrated circuit device with power consumption reducing arrangement

Info

Publication number
HK40290A
HK40290A HK402/90A HK40290A HK40290A HK 40290 A HK40290 A HK 40290A HK 402/90 A HK402/90 A HK 402/90A HK 40290 A HK40290 A HK 40290A HK 40290 A HK40290 A HK 40290A
Authority
HK
Hong Kong
Prior art keywords
integrated circuit
power consumption
semiconductor integrated
circuit device
consumption reducing
Prior art date
Application number
HK402/90A
Other languages
English (en)
Inventor
Shuichi Miyaoka
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK40290A publication Critical patent/HK40290A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Static Random-Access Memory (AREA)
HK402/90A 1983-12-26 1990-05-24 Semiconductor integrated circuit device with power consumption reducing arrangement HK40290A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243807A JPS60136084A (ja) 1983-12-26 1983-12-26 半導体集積回路装置

Publications (1)

Publication Number Publication Date
HK40290A true HK40290A (en) 1990-06-01

Family

ID=17109225

Family Applications (1)

Application Number Title Priority Date Filing Date
HK402/90A HK40290A (en) 1983-12-26 1990-05-24 Semiconductor integrated circuit device with power consumption reducing arrangement

Country Status (6)

Country Link
US (1) US5111432A (de)
JP (1) JPS60136084A (de)
KR (1) KR930008575B1 (de)
DE (1) DE3447723A1 (de)
GB (1) GB2154086B (de)
HK (1) HK40290A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5265060A (en) * 1983-12-26 1993-11-23 Hitachi, Ltd. Semiconductor integrated circuit device with power consumption reducing arrangement
JPH0795395B2 (ja) * 1984-02-13 1995-10-11 株式会社日立製作所 半導体集積回路
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
JP2598412B2 (ja) * 1987-07-10 1997-04-09 株式会社日立製作所 半導体記憶装置
JPH0817036B2 (ja) * 1988-10-06 1996-02-21 日本電気株式会社 半導体メモリ回路
WO1991007757A1 (en) * 1989-11-21 1991-05-30 Fujitsu Limited Sense amplifier control circuit
US5281873A (en) * 1989-11-21 1994-01-25 Fujitsu Limited Sense amplifier control circuit
JP2646850B2 (ja) * 1990-11-30 1997-08-27 日本電気株式会社 半導体メモリ回路
KR930017033A (ko) * 1992-01-17 1993-08-30 가나이 스토무 반도체 기억장치
WO1993018412A1 (en) * 1992-03-13 1993-09-16 Silicon Storage Technology, Inc. A sensing circuit for a floating gate memory device
US5594697A (en) * 1994-06-28 1997-01-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device
TW324101B (en) * 1995-12-21 1998-01-01 Hitachi Ltd Semiconductor integrated circuit and its working method

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600222A (de) * 1968-12-31 1970-07-20
GB1252362A (de) * 1969-03-11 1971-11-03
US3601628A (en) * 1969-06-25 1971-08-24 Texas Instruments Inc Precharge mos-bipolar output buffer
US3601630A (en) * 1969-06-26 1971-08-24 Texas Instruments Inc Mos circuit with bipolar emitter-follower output
JPS4979793A (de) * 1972-12-08 1974-08-01
US3870901A (en) * 1973-12-10 1975-03-11 Gen Instrument Corp Method and apparatus for maintaining the charge on a storage node of a mos circuit
US4090254A (en) * 1976-03-01 1978-05-16 International Business Machines Corporation Charge injector transistor memory
US4096584A (en) * 1977-01-31 1978-06-20 Intel Corporation Low power/high speed static ram
JPS5570993A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Memory circuit
JPS5596158A (en) * 1979-01-16 1980-07-22 Olympus Optical Co Medicating tube
JPS5658193A (en) * 1979-10-16 1981-05-21 Nec Corp Semiconductor memory device
JPS6028076B2 (ja) * 1980-12-25 1985-07-02 富士通株式会社 半導体メモリの書込み回路
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
JPS57208690A (en) * 1981-06-19 1982-12-21 Hitachi Ltd Semiconductor storage device
JPS5826392A (ja) * 1981-08-11 1983-02-16 Toshiba Corp Ｍｏｓメモリ用センス回路
JPS58209212A (ja) * 1982-05-31 1983-12-06 Hitachi Ltd トランジスタ回路
JPH0648595B2 (ja) * 1982-08-20 1994-06-22 株式会社東芝 半導体記憶装置のセンスアンプ
JPS5956292A (ja) * 1982-09-24 1984-03-31 Hitachi Ltd 半導体記憶装置
JPS5968889A (ja) * 1982-10-08 1984-04-18 Toshiba Corp 半導体記憶装置
US4604533A (en) * 1982-12-28 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Sense amplifier
JPS59203296A (ja) * 1983-04-30 1984-11-17 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
DE3447723A1 (de) 1985-07-04
US5111432A (en) 1992-05-05
KR850005171A (ko) 1985-08-21
GB8431943D0 (en) 1985-01-30
JPS60136084A (ja) 1985-07-19
GB2154086A (en) 1985-08-29
KR930008575B1 (ko) 1993-09-09
GB2154086B (en) 1988-09-21
JPH0586000B2 (de) 1993-12-09

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)