HK28396A - Non-volatile memory - Google Patents
Non-volatile memoryInfo
- Publication number
- HK28396A HK28396A HK28396A HK28396A HK28396A HK 28396 A HK28396 A HK 28396A HK 28396 A HK28396 A HK 28396A HK 28396 A HK28396 A HK 28396A HK 28396 A HK28396 A HK 28396A
- Authority
- HK
- Hong Kong
- Prior art keywords
- volatile memory
- volatile
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/14—Protection against unauthorised use of memory or access to memory
- G06F12/1416—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights
- G06F12/1425—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights the protection being physical, e.g. cell, word, block
- G06F12/1433—Protection against unauthorised use of memory or access to memory by checking the object accessibility, e.g. type of access defined by the memory independently of subject rights the protection being physical, e.g. cell, word, block for a module or a part of a module
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Storage Device Security (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5880887A JP2833621B2 (ja) | 1987-03-16 | 1987-03-16 | 不揮発性記憶装置 |
JP62139402A JPS63303447A (ja) | 1987-06-03 | 1987-06-03 | 半導体集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK28396A true HK28396A (en) | 1996-02-23 |
Family
ID=26399812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK28396A HK28396A (en) | 1987-03-16 | 1996-02-15 | Non-volatile memory |
Country Status (5)
Country | Link |
---|---|
US (2) | US4931997A (xx) |
EP (2) | EP0283238B1 (xx) |
KR (1) | KR950014560B1 (xx) |
DE (2) | DE3856216T2 (xx) |
HK (1) | HK28396A (xx) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4931997A (en) * | 1987-03-16 | 1990-06-05 | Hitachi Ltd. | Semiconductor memory having storage buffer to save control data during bulk erase |
US5315547A (en) * | 1988-07-11 | 1994-05-24 | Hitachi, Ltd. | Nonvolatile semiconductor memory device with selective tow erasure |
JPH0812646B2 (ja) * | 1989-03-03 | 1996-02-07 | 三菱電機株式会社 | 半導体集積回路 |
US7447069B1 (en) | 1989-04-13 | 2008-11-04 | Sandisk Corporation | Flash EEprom system |
DE69024086T2 (de) * | 1989-04-13 | 1996-06-20 | Sundisk Corp | EEprom-System mit Blocklöschung |
JPH03232196A (ja) * | 1990-02-07 | 1991-10-16 | Toshiba Corp | 半導体記憶装置 |
JP3099887B2 (ja) * | 1990-04-12 | 2000-10-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPH04123471A (ja) * | 1990-09-14 | 1992-04-23 | Oki Electric Ind Co Ltd | 半導体記憶装置のデータ書込みおよび消去方法 |
US5337280A (en) * | 1990-09-27 | 1994-08-09 | Oki Electric Industry Co., Ltd. | EEPROM circuit |
JPH04141794A (ja) * | 1990-10-03 | 1992-05-15 | Mitsubishi Electric Corp | Icカード |
JP2724046B2 (ja) * | 1991-02-07 | 1998-03-09 | 富士写真フイルム株式会社 | Icメモリカードシステム |
US5546561A (en) * | 1991-02-11 | 1996-08-13 | Intel Corporation | Circuitry and method for selectively protecting the integrity of data stored within a range of addresses within a non-volatile semiconductor memory |
US5309402A (en) * | 1991-02-15 | 1994-05-03 | Nec Corporation | Flash electrically erasable and programmable ROM |
JP2837970B2 (ja) * | 1991-04-12 | 1998-12-16 | 三菱電機株式会社 | Icカード |
US5197034A (en) * | 1991-05-10 | 1993-03-23 | Intel Corporation | Floating gate non-volatile memory with deep power down and write lock-out |
US5270980A (en) * | 1991-10-28 | 1993-12-14 | Eastman Kodak Company | Sector erasable flash EEPROM |
WO1993010498A1 (en) * | 1991-11-12 | 1993-05-27 | Microchip Technology Inc. | Security for on-chip microcontroller memory |
JP3080744B2 (ja) * | 1991-12-27 | 2000-08-28 | 日本電気株式会社 | 電気的に書き込み一括消去可能な不揮発性半導体記憶装置 |
TW231343B (xx) * | 1992-03-17 | 1994-10-01 | Hitachi Seisakusyo Kk | |
DE4311358C2 (de) * | 1992-04-07 | 1999-07-22 | Mitsubishi Electric Corp | Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung |
US5557572A (en) * | 1992-04-24 | 1996-09-17 | Nippon Steel Corporation | Non-volatile semiconductor memory device |
US5473753A (en) * | 1992-10-30 | 1995-12-05 | Intel Corporation | Method of managing defects in flash disk memories |
DE4242579C2 (de) * | 1992-12-16 | 1997-08-21 | Siemens Ag | Verfahren zur Echtheitserkennung von Datenträgern |
US5345413A (en) * | 1993-04-01 | 1994-09-06 | Microchip Technology Incorporated | Default fuse condition for memory device after final test |
US5363334A (en) * | 1993-04-10 | 1994-11-08 | Microchip Technology Incorporated | Write protection security for memory device |
GB2283345B (en) * | 1993-05-11 | 1997-11-12 | Nippon Kokan Kk | Non-volatile memory device and method for adjusting the threshold value thereof |
US5513136A (en) * | 1993-09-27 | 1996-04-30 | Intel Corporation | Nonvolatile memory with blocks and circuitry for selectively protecting the blocks for memory operations |
JP3579461B2 (ja) * | 1993-10-15 | 2004-10-20 | 株式会社ルネサステクノロジ | データ処理システム及びデータ処理装置 |
JPH07192481A (ja) * | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5623444A (en) * | 1994-08-25 | 1997-04-22 | Nippon Kokan Kk | Electrically-erasable ROM with pulse-driven memory cell transistors |
US5538141A (en) * | 1994-09-27 | 1996-07-23 | Intel Corporation | Test flow assurance using memory imprinting |
US5615146A (en) * | 1994-11-11 | 1997-03-25 | Nkk Corporation | Nonvolatile memory with write data latch |
US5808338A (en) * | 1994-11-11 | 1998-09-15 | Nkk Corporation | Nonvolatile semiconductor memory |
US5661686A (en) * | 1994-11-11 | 1997-08-26 | Nkk Corporation | Nonvolatile semiconductor memory |
US5602779A (en) * | 1994-11-11 | 1997-02-11 | Nkk Corporation | Nonvolatile multivalue memory |
US5491657A (en) * | 1995-02-24 | 1996-02-13 | Advanced Micro Devices, Inc. | Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells |
DE19517946C2 (de) * | 1995-05-18 | 2001-02-01 | Pepperl & Fuchs | Verfahren zum Auffrischen von Daten in nichtflüchtigen Speichern eines Datenträgers innerhalb eines Identifikations-Systems |
JPH08329691A (ja) * | 1995-05-30 | 1996-12-13 | Nkk Corp | 不揮発性半導体記憶装置 |
US5721877A (en) * | 1995-05-31 | 1998-02-24 | Ast Research, Inc. | Method and apparatus for limiting access to nonvolatile memory device |
JPH0945090A (ja) * | 1995-07-31 | 1997-02-14 | Nkk Corp | 不揮発性半導体記憶装置 |
JPH0945094A (ja) * | 1995-07-31 | 1997-02-14 | Nkk Corp | 不揮発性半導体記憶装置 |
JP3268732B2 (ja) * | 1996-10-21 | 2002-03-25 | 株式会社東芝 | 不揮発性半導体メモリ |
JPH11110293A (ja) * | 1997-09-29 | 1999-04-23 | Mitsubishi Electric Corp | 不揮発性メモリ制御回路 |
US6018686A (en) * | 1997-10-31 | 2000-01-25 | Cypress Semiconductor Corp. | Electrically imprinting a semiconductor die with identifying information |
US6154872A (en) | 1997-11-20 | 2000-11-28 | Cypress Semiconductor Corporation | Method, circuit and apparatus for preserving and/or correcting product engineering information |
US6052319A (en) | 1997-12-04 | 2000-04-18 | Cypress Semiconductor Corp. | Apparatus and method for controlling experimental inventory |
US6148279A (en) * | 1997-12-04 | 2000-11-14 | Cypress Semiconductor Corporation | Apparatus for recording and/or reading program history |
JPH11184834A (ja) * | 1997-12-25 | 1999-07-09 | Sanyo Electric Co Ltd | マイクロコンピュータ |
US6181615B1 (en) | 1998-03-30 | 2001-01-30 | Cypress Semiconductor Corporation | Circuitry, apparatus and method for embedding quantifiable test results within a circuit being tested |
US6209110B1 (en) | 1998-03-30 | 2001-03-27 | Cypress Semiconductor Corporation | Circuitry, apparatus and method for embedding a test status outcome within a circuit being tested |
JP3729638B2 (ja) * | 1998-04-22 | 2005-12-21 | 富士通株式会社 | メモリデバイス |
DE19819265C1 (de) * | 1998-04-30 | 1999-08-19 | Micronas Intermetall Gmbh | Verfahren zum Parametrieren einer integrierten Schaltungsanordnung und integrierte Schaltungsanordnung hierfür |
US6075727A (en) * | 1998-07-29 | 2000-06-13 | Motorola, Inc | Method and apparatus for writing an erasable non-volatile memory |
US5995417A (en) * | 1998-10-20 | 1999-11-30 | Advanced Micro Devices, Inc. | Scheme for page erase and erase verify in a non-volatile memory array |
US6104638A (en) * | 1999-02-26 | 2000-08-15 | Hewlett-Packard Company | Use of erasable non-volatile memory for storage of changing information |
US6445640B1 (en) * | 2001-03-23 | 2002-09-03 | Sun Microsystems, Inc. | Method and apparatus for invalidating memory array write operations |
US7299203B1 (en) * | 2001-04-19 | 2007-11-20 | Xilinx, Inc. | Method for storing and shipping programmable ASSP devices |
US6532169B1 (en) | 2001-06-26 | 2003-03-11 | Cypress Semiconductor Corp. | SONOS latch and application |
US6842380B2 (en) * | 2002-08-27 | 2005-01-11 | Micron Technology, Inc. | Method and apparatus for erasing memory |
JP4248359B2 (ja) * | 2003-09-30 | 2009-04-02 | 三洋電機株式会社 | 半導体装置およびその試験方法 |
EP1542130B1 (fr) * | 2003-12-12 | 2007-04-11 | STMicroelectronics S.A. | Mémoire série comprenant des moyens d'intégration dans un plan mémoire étendu |
EP1640844A1 (en) * | 2004-09-27 | 2006-03-29 | STMicroelectronics Limited | Secure OTP using external memory |
US8997255B2 (en) | 2006-07-31 | 2015-03-31 | Inside Secure | Verifying data integrity in a data storage device |
US8352752B2 (en) * | 2006-09-01 | 2013-01-08 | Inside Secure | Detecting radiation-based attacks |
KR20090055314A (ko) * | 2007-11-28 | 2009-06-02 | 삼성전자주식회사 | 읽기 디스터번스를 줄일 수 있는 불휘발성 메모리 장치 |
US8064255B2 (en) * | 2007-12-31 | 2011-11-22 | Cypress Semiconductor Corporation | Architecture of a nvDRAM array and its sense regime |
US8059458B2 (en) * | 2007-12-31 | 2011-11-15 | Cypress Semiconductor Corporation | 3T high density nvDRAM cell |
US8036032B2 (en) | 2007-12-31 | 2011-10-11 | Cypress Semiconductor Corporation | 5T high density NVDRAM cell |
JP2009181624A (ja) * | 2008-01-30 | 2009-08-13 | Panasonic Corp | 不揮発性半導体記憶装置 |
US9203248B2 (en) | 2009-09-28 | 2015-12-01 | Hitachi, Ltd. | Battery management system using non-volatile memory |
KR101015108B1 (ko) * | 2010-07-28 | 2011-02-21 | 김인휘 | 무전원 방식의 휴대용 정수기 |
KR101934433B1 (ko) | 2012-05-31 | 2019-01-02 | 에스케이하이닉스 주식회사 | 블럭 보호가 가능한 반도체 장치 |
KR101991905B1 (ko) | 2012-07-19 | 2019-06-24 | 삼성전자주식회사 | 불휘발성 메모리, 불휘발성 메모리의 읽기 방법 및 불휘발성 메모리를 포함하는 메모리 시스템 |
JP6364365B2 (ja) * | 2015-02-25 | 2018-07-25 | 株式会社東芝 | 半導体記憶装置 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4130890A (en) * | 1977-06-08 | 1978-12-19 | Itt Industries, Inc. | Integrated DDC memory with bitwise erase |
US4447887A (en) * | 1980-09-02 | 1984-05-08 | Fujitsu Fanuc Limited | Method of rewriting data in non-volatile memory, and system therefor |
US4428047A (en) * | 1981-04-13 | 1984-01-24 | Texas Instruments Incorporated | Addressing a control ROM in a microcoded single-chip microcomputer using the output signals of the control ROM |
US4408306A (en) * | 1981-09-28 | 1983-10-04 | Motorola, Inc. | Column and row erasable EEPROM |
US4506322A (en) * | 1982-02-22 | 1985-03-19 | Texas Instruments Incorporated | Read/write memory cell for microcomputer |
CH663186A5 (fr) * | 1982-06-04 | 1987-11-30 | Nestle Sa | Recipient composite. |
US4521852A (en) * | 1982-06-30 | 1985-06-04 | Texas Instruments Incorporated | Data processing device formed on a single semiconductor substrate having secure memory |
US4829469A (en) * | 1982-07-12 | 1989-05-09 | Pitney Bowes Inc. | Security system for use with electronic postage meter to prevent lock erasure of data |
JPS5971180A (ja) * | 1982-10-16 | 1984-04-21 | Dainippon Printing Co Ltd | Icカ−ドにおける情報処理方法 |
JPS5977699A (ja) * | 1982-10-25 | 1984-05-04 | Dainippon Printing Co Ltd | Icカ−ド |
JPS5998395A (ja) * | 1982-11-29 | 1984-06-06 | Dainippon Printing Co Ltd | Icカ−ド |
DE3318123A1 (de) * | 1983-05-18 | 1984-11-22 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung mit einem datenspeicher und einer ansteuereinheit zum auslesen, schreiben und loeschen des speichers |
JPS6059452A (ja) * | 1983-09-13 | 1985-04-05 | Koito Mfg Co Ltd | Eepromにおけるデ−タ書換え防止回路 |
US4686620A (en) * | 1984-07-26 | 1987-08-11 | American Telephone And Telegraph Company, At&T Bell Laboratories | Database backup method |
JPS6157099A (ja) * | 1984-08-28 | 1986-03-22 | Matsushita Electric Ind Co Ltd | Eprom書き込み禁止回路 |
US4698750A (en) * | 1984-12-27 | 1987-10-06 | Motorola, Inc. | Security for integrated circuit microcomputer with EEPROM |
JPH0616305B2 (ja) * | 1985-03-05 | 1994-03-02 | 日本電気株式会社 | シングルチツプマイクロコンピユ−タ |
DE3514430A1 (de) * | 1985-04-20 | 1986-10-23 | Sartorius GmbH, 3400 Göttingen | Verfahren zum abspeichern von daten in einem elektrisch loeschbaren speicher und elektrisch loeschbarer speicher zur durchfuehrung des verfahrens |
US4744062A (en) * | 1985-04-23 | 1988-05-10 | Hitachi, Ltd. | Semiconductor integrated circuit with nonvolatile memory |
US4752871A (en) * | 1985-09-30 | 1988-06-21 | Motorola, Inc. | Single-chip microcomputer having a program register for controlling two EEPROM arrays |
US4802117A (en) * | 1985-12-16 | 1989-01-31 | Pitney Bowes Inc. | Method of preserving data storage in a postal meter |
JPS6382534A (ja) * | 1986-09-26 | 1988-04-13 | Matsushita Electric Ind Co Ltd | メモリ保護装置 |
FR2608803B1 (fr) * | 1986-12-19 | 1991-10-25 | Eurotechnique Sa | Dispositif de protection d'une memoire morte effacable et reprogrammable |
US4860228A (en) * | 1987-02-24 | 1989-08-22 | Motorola, Inc. | Non-volatile memory incremental counting system |
US4931997A (en) * | 1987-03-16 | 1990-06-05 | Hitachi Ltd. | Semiconductor memory having storage buffer to save control data during bulk erase |
JPS63293664A (ja) * | 1987-05-27 | 1988-11-30 | Sharp Corp | 電子機器 |
US4975878A (en) * | 1988-01-28 | 1990-12-04 | National Semiconductor | Programmable memory data protection scheme |
JP3208854B2 (ja) * | 1992-08-13 | 2001-09-17 | 大日本インキ化学工業株式会社 | 紫外線硬化型樹脂組成物及びそれを用いた光ファイバー |
JP3757242B2 (ja) * | 1992-11-16 | 2006-03-22 | 電気化学工業株式会社 | セメント組成物 |
-
1988
- 1988-02-23 US US07/159,193 patent/US4931997A/en not_active Expired - Lifetime
- 1988-03-09 KR KR1019880002444A patent/KR950014560B1/ko not_active IP Right Cessation
- 1988-03-15 EP EP88302235A patent/EP0283238B1/en not_active Expired - Lifetime
- 1988-03-15 DE DE3856216T patent/DE3856216T2/de not_active Expired - Fee Related
- 1988-03-15 DE DE3852833T patent/DE3852833T2/de not_active Expired - Fee Related
- 1988-03-15 EP EP93114480A patent/EP0579274B1/en not_active Expired - Lifetime
-
1990
- 1990-04-24 US US07/513,569 patent/US5084843A/en not_active Expired - Lifetime
-
1996
- 1996-02-15 HK HK28396A patent/HK28396A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0579274A3 (en) | 1995-09-20 |
EP0283238A2 (en) | 1988-09-21 |
KR950014560B1 (ko) | 1995-12-05 |
DE3856216D1 (de) | 1998-08-13 |
EP0579274A2 (en) | 1994-01-19 |
DE3852833D1 (de) | 1995-03-09 |
DE3852833T2 (de) | 1995-06-22 |
US5084843A (en) | 1992-01-28 |
EP0579274B1 (en) | 1998-07-08 |
EP0283238B1 (en) | 1995-01-25 |
US4931997A (en) | 1990-06-05 |
DE3856216T2 (de) | 1999-04-08 |
EP0283238A3 (en) | 1990-11-28 |
KR890001098A (ko) | 1989-03-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |