HK1225867B - 具有可調共基極偏置的功率放大系統 - Google Patents

具有可調共基極偏置的功率放大系統

Info

Publication number
HK1225867B
HK1225867B HK16113989A HK16113989A HK1225867B HK 1225867 B HK1225867 B HK 1225867B HK 16113989 A HK16113989 A HK 16113989A HK 16113989 A HK16113989 A HK 16113989A HK 1225867 B HK1225867 B HK 1225867B
Authority
HK
Hong Kong
Prior art keywords
power amplification
amplification system
common base
base bias
adjustable common
Prior art date
Application number
HK16113989A
Other languages
English (en)
Inventor
John Lehtola Philip
W Coffin Scott
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of HK1225867B publication Critical patent/HK1225867B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/468—Indexing scheme relating to amplifiers the temperature being sensed
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
HK16113989A 2015-02-15 2016-12-08 具有可調共基極偏置的功率放大系統 HK1225867B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201562116499P 2015-02-15 2015-02-15

Publications (1)

Publication Number Publication Date
HK1225867B true HK1225867B (zh) 2017-09-15

Family

ID=56552516

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16113989A HK1225867B (zh) 2015-02-15 2016-12-08 具有可調共基極偏置的功率放大系統

Country Status (7)

Country Link
US (4) US9698734B2 (zh)
JP (1) JP6255371B2 (zh)
KR (2) KR101746572B1 (zh)
CN (1) CN105897175B (zh)
DE (1) DE102015218903A1 (zh)
HK (1) HK1225867B (zh)
TW (1) TWI634737B (zh)

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US9698734B2 (en) 2015-02-15 2017-07-04 Skyworks Solutions, Inc. Power amplification system with adjustable common base bias
DE102016220349A1 (de) * 2016-10-18 2018-04-19 Trumpf Schweiz Ag Hochfrequenztreiberschaltung für eine akustooptische Komponente und Verfahren zum Betrieb einer HF-Treiberschaltung
US11258406B2 (en) 2016-11-25 2022-02-22 Murata Manufacturing Co., Ltd. Power amplifier circuit
US10389307B2 (en) 2016-11-25 2019-08-20 Murata Manufacturing Co., Ltd. Power amplifier circuit
JP2018085689A (ja) 2016-11-25 2018-05-31 株式会社村田製作所 電力増幅回路
US10873296B2 (en) 2016-12-30 2020-12-22 Richwave Technology Corp. Amplifier device
JP6630303B2 (ja) 2017-02-24 2020-01-15 株式会社東芝 高周波半導体増幅回路
KR102374467B1 (ko) 2017-03-06 2022-03-16 삼성전자주식회사 무선 전력 송신 장치 및 그 동작 방법
US9921594B1 (en) * 2017-04-13 2018-03-20 Psemi Corporation Low dropout regulator with thin pass device
WO2019103899A1 (en) 2017-11-27 2019-05-31 Skyworks Solutions, Inc. Wideband power combiner and splitter
US10554177B2 (en) 2017-11-27 2020-02-04 Skyworks Solutions, Inc. Quadrature combined doherty amplifiers
JP2019110475A (ja) * 2017-12-19 2019-07-04 株式会社村田製作所 電力増幅回路
GB2577602B (en) 2018-08-01 2023-01-18 Skyworks Solutions Inc Variable power amplifier bias impedance
JP2020065224A (ja) * 2018-10-19 2020-04-23 株式会社村田製作所 電力増幅回路
US11916517B2 (en) 2019-04-23 2024-02-27 Skyworks Solutions, Inc. Saturation detection of power amplifiers
TWI724893B (zh) * 2019-05-08 2021-04-11 立積電子股份有限公司 放大器裝置
KR20210080905A (ko) * 2019-12-23 2021-07-01 삼성전기주식회사 전력 증폭 모듈
US11316550B2 (en) 2020-01-15 2022-04-26 Skyworks Solutions, Inc. Biasing of cascode power amplifiers for multiple power supply domains
TWI714515B (zh) * 2020-06-17 2020-12-21 立積電子股份有限公司 用於功率放大器的溫度補償電路
US11843356B2 (en) 2021-09-21 2023-12-12 Apple Inc. Radio-frequency power amplifier with amplitude modulation to amplitude modulation (AMAM) compensation

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US5066926A (en) * 1990-06-26 1991-11-19 Pacific Monolithics Segmented cascode HBT for microwave-frequency power amplifiers
JPH05308233A (ja) * 1992-04-28 1993-11-19 Nippon Telegr & Teleph Corp <Ntt> 高周波増幅装置
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Also Published As

Publication number Publication date
CN105897175A (zh) 2016-08-24
CN105897175B (zh) 2018-10-16
KR102354830B1 (ko) 2022-01-24
TW201633698A (zh) 2016-09-16
JP2016149748A (ja) 2016-08-18
US9698734B2 (en) 2017-07-04
US20230261616A1 (en) 2023-08-17
TWI634737B (zh) 2018-09-01
US20200099346A1 (en) 2020-03-26
KR101746572B1 (ko) 2017-06-13
US20160241203A1 (en) 2016-08-18
KR20160100795A (ko) 2016-08-24
DE102015218903A1 (de) 2016-08-18
US11942902B2 (en) 2024-03-26
US11545938B2 (en) 2023-01-03
JP6255371B2 (ja) 2017-12-27
US20170302230A1 (en) 2017-10-19
KR20170069183A (ko) 2017-06-20
US10250202B2 (en) 2019-04-02

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