HK1214407A1 - 元件及其製造方法 - Google Patents

元件及其製造方法

Info

Publication number
HK1214407A1
HK1214407A1 HK16102139.0A HK16102139A HK1214407A1 HK 1214407 A1 HK1214407 A1 HK 1214407A1 HK 16102139 A HK16102139 A HK 16102139A HK 1214407 A1 HK1214407 A1 HK 1214407A1
Authority
HK
Hong Kong
Prior art keywords
led
producing same
led element
same led
producing
Prior art date
Application number
HK16102139.0A
Other languages
English (en)
Inventor
北野司森美登里近藤俊行鈴木敦志難波江宏大矢昌輝
Original Assignee
El-Seed Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by El-Seed Corp filed Critical El-Seed Corp
Publication of HK1214407A1 publication Critical patent/HK1214407A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
HK16102139.0A 2013-04-16 2016-02-25 元件及其製造方法 HK1214407A1 (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013086051 2013-04-16
JP2013086050 2013-04-16
JP2013086049 2013-04-16
PCT/JP2014/060763 WO2014171467A1 (ja) 2013-04-16 2014-04-15 Ｌｅｄ素子及びその製造方法

Publications (1)

Publication Number Publication Date
HK1214407A1 true HK1214407A1 (zh) 2016-07-22

Family

ID=51731404

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16102139.0A HK1214407A1 (zh) 2013-04-16 2016-02-25 元件及其製造方法

Country Status (5)

Country Link
US (2) US9793434B2 (zh)
JP (3) JP5643920B1 (zh)
CN (1) CN105264676A (zh)
HK (1) HK1214407A1 (zh)
WO (1) WO2014171467A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105453277B (zh) * 2013-07-30 2018-01-30 国立研究开发法人情报通信研究机构 半导体发光元件及其制造方法
JP6436694B2 (ja) * 2014-09-17 2018-12-12 住友化学株式会社 窒化物半導体テンプレートの製造方法
DE102014116999A1 (de) * 2014-11-20 2016-05-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JPWO2017014100A1 (ja) * 2015-07-17 2018-04-26 Ｓｃｉｖａｘ株式会社 発光素子
JP6524904B2 (ja) 2015-12-22 2019-06-05 日亜化学工業株式会社 発光装置
JP2017175004A (ja) * 2016-03-24 2017-09-28 ソニー株式会社 チップサイズパッケージ、製造方法、電子機器、および内視鏡
CN106299085B (zh) * 2016-09-21 2019-04-30 海迪科（南通）光电科技有限公司 一种偏振发光二极管芯片
EP3528297B1 (en) * 2016-11-22 2021-05-19 National Institute of Information and Communications Technology Light-emitting module provided with semiconductor light-emitting element that emits deep ultraviolet light
JP6608352B2 (ja) * 2016-12-20 2019-11-20 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP6841198B2 (ja) * 2017-09-28 2021-03-10 豊田合成株式会社 発光素子の製造方法
US10304993B1 (en) * 2018-01-05 2019-05-28 Epistar Corporation Light-emitting device and method of manufacturing the same
KR102443027B1 (ko) 2018-03-02 2022-09-14 삼성전자주식회사 반도체 발광소자
CN108447404B (zh) * 2018-04-04 2021-10-26 京东方科技集团股份有限公司 柔性阵列基板、显示装置及柔性阵列基板的制造方法
CN109599469A (zh) * 2018-12-18 2019-04-09 华中科技大学鄂州工业技术研究院 蛾眼结构深紫外发光二极管及制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP4637781B2 (ja) * 2006-03-31 2011-02-23 昭和電工株式会社 ＧａＮ系半導体発光素子の製造方法
JP5082752B2 (ja) * 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
JP5379434B2 (ja) * 2008-09-22 2013-12-25 学校法人 名城大学 発光素子用サファイア基板の製造方法
WO2011027679A1 (ja) * 2009-09-07 2011-03-10 エルシード株式会社 半導体発光素子
JP5477084B2 (ja) * 2010-03-17 2014-04-23 豊田合成株式会社 半導体発光素子およびその製造方法、ランプ、電子機器、機械装置
JP5142236B1 (ja) * 2011-11-15 2013-02-13 エルシード株式会社 エッチング方法

Also Published As

Publication number Publication date
JP2015029118A (ja) 2015-02-12
JP5728116B2 (ja) 2015-06-03
JPWO2014171467A1 (ja) 2017-02-23
CN105264676A (zh) 2016-01-20
US20180026154A1 (en) 2018-01-25
JP2015119202A (ja) 2015-06-25
WO2014171467A1 (ja) 2014-10-23
US9793434B2 (en) 2017-10-17
JP5643920B1 (ja) 2014-12-17
US20160149076A1 (en) 2016-05-26

Similar Documents

Publication Publication Date Title
GB2520596B (en) Manufacturing method
HK1214407A1 (zh) 元件及其製造方法
EP2980871A4 (en) LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2947416A4 (en) SENSOR AND METHOD FOR THE MANUFACTURE THEREOF
IL239949A0 (en) Docking component and method for its production
HK1215329A1 (zh) 元件及其製造方法
GB201309057D0 (en) Method
EP2955762A4 (en) LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD
EP3009400A4 (en) LEV TYPE ZEOLITE AND METHOD FOR PRODUCING THE SAME
GB201309928D0 (en) Method
EP2980122A4 (en) METHOD OF PREPARING POLYORGANOSILOXANE
GB201301857D0 (en) Method
GB201313249D0 (en) Method
GB201309654D0 (en) Method
GB201305714D0 (en) Method
GB201301233D0 (en) Method
GB201300409D0 (en) Method
GB201311385D0 (en) Method
GB201301094D0 (en) Method
EP2987780A4 (en) POLYOL ETHER COMPOUND AND PROCESS FOR PRODUCING THE SAME
EP2999311A4 (en) Organic led element and method for producing organic led element
GB201314054D0 (en) Method
GB201312609D0 (en) Method
GB201311389D0 (en) Method
RS56867B1 (sr) Postupak za proizvodnju kompozitnih elemenata, kao i tako dobijeni kompozitni element