HK1207473A1 - 用於高動態範圍圖像傳感器的圖像傳感器像素 - Google Patents
用於高動態範圍圖像傳感器的圖像傳感器像素Info
- Publication number
- HK1207473A1 HK1207473A1 HK15108035.3A HK15108035A HK1207473A1 HK 1207473 A1 HK1207473 A1 HK 1207473A1 HK 15108035 A HK15108035 A HK 15108035A HK 1207473 A1 HK1207473 A1 HK 1207473A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensor
- dynamic range
- high dynamic
- pixel
- range image
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/135,066 US9324759B2 (en) | 2013-12-19 | 2013-12-19 | Image sensor pixel for high dynamic range image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1207473A1 true HK1207473A1 (zh) | 2016-01-29 |
Family
ID=53400941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK15108035.3A HK1207473A1 (zh) | 2013-12-19 | 2015-08-19 | 用於高動態範圍圖像傳感器的圖像傳感器像素 |
Country Status (4)
Country | Link |
---|---|
US (3) | US9324759B2 (zh) |
CN (3) | CN104733480B (zh) |
HK (1) | HK1207473A1 (zh) |
TW (3) | TWI591812B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US9305949B2 (en) | 2013-11-01 | 2016-04-05 | Omnivision Technologies, Inc. | Big-small pixel scheme for image sensors |
US9324759B2 (en) | 2013-12-19 | 2016-04-26 | Omnivision Technologies, Inc. | Image sensor pixel for high dynamic range image sensor |
JP6408372B2 (ja) * | 2014-03-31 | 2018-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及びその駆動制御方法、並びに、電子機器 |
JP6808623B2 (ja) * | 2015-07-08 | 2021-01-06 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
JP2017054966A (ja) * | 2015-09-10 | 2017-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
CA3017935C (en) * | 2016-03-16 | 2020-04-21 | BAE Systems Imaging Solutions Inc. | High dynamic range imaging sensor array |
CN106331434B (zh) * | 2016-09-05 | 2019-09-06 | 深圳安芯微电子有限公司 | 图像处理装置与方法 |
CN108024075B (zh) * | 2016-10-28 | 2019-10-11 | 原相科技股份有限公司 | 全局快门高动态范围像素及影像传感器 |
US9888185B1 (en) * | 2016-12-20 | 2018-02-06 | Omnivision Technologies, Inc. | Row decoder for high dynamic range image sensor using in-frame multi-bit exposure control |
CN107426472A (zh) * | 2017-06-01 | 2017-12-01 | 深圳市矽旺半导体有限公司 | 宽动态范围图像传感器***及其实现方法 |
US10334191B1 (en) * | 2018-03-02 | 2019-06-25 | Omnivision Technologies, Inc. | Pixel array with embedded split pixels for high dynamic range imaging |
CN110324540A (zh) * | 2019-06-10 | 2019-10-11 | 芯盟科技有限公司 | 一种图像传感器、图像传感器的形成方法及电子设备 |
US11212457B2 (en) * | 2020-05-28 | 2021-12-28 | Omnivision Technologies, Inc. | High dynamic range CMOS image sensor design |
CN111866414B (zh) * | 2020-07-15 | 2021-08-20 | 大连理工大学 | 高动态图像传感器像素结构及时序控制方法 |
CN112563299B (zh) * | 2020-12-10 | 2023-03-24 | 成都微光集电科技有限公司 | Cmos图像传感器及其制备方法 |
Family Cites Families (28)
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US6825884B1 (en) | 1998-12-03 | 2004-11-30 | Olympus Corporation | Imaging processing apparatus for generating a wide dynamic range image |
KR100674925B1 (ko) * | 2004-12-07 | 2007-01-26 | 삼성전자주식회사 | 허니콤 구조의 능동 픽셀 센서 |
KR100657863B1 (ko) | 2005-02-07 | 2006-12-14 | 삼성전자주식회사 | 핑거드 타입 소스 폴로워 트랜지스터를 이용한 상보성금속 산화막 반도체 액티브 픽셀 센서 |
US20070040922A1 (en) * | 2005-08-22 | 2007-02-22 | Micron Technology, Inc. | HDR/AB on multi-way shared pixels |
KR100761829B1 (ko) | 2005-12-15 | 2007-09-28 | 삼성전자주식회사 | 반도체 소자, 시모스 이미지 센서, 반도체 소자의 제조방법및 시모스 이미지 센서의 제조방법 |
JP2007282028A (ja) * | 2006-04-10 | 2007-10-25 | Fujifilm Corp | 車載カメラ |
US7683397B2 (en) * | 2006-07-20 | 2010-03-23 | Intel Corporation | Semi-planar avalanche photodiode |
CN101162722A (zh) * | 2006-10-11 | 2008-04-16 | 北京思比科微电子技术有限公司 | 一种cmos图像传感器及光电转换器及光电二极管 |
US7863647B1 (en) * | 2007-03-19 | 2011-01-04 | Northrop Grumman Systems Corporation | SiC avalanche photodiode with improved edge termination |
KR100835894B1 (ko) * | 2007-06-18 | 2008-06-09 | (주)실리콘화일 | 다이내믹 레인지가 넓고, 색재현성과 해상능력이 우수한픽셀어레이 및 이미지센서 |
US7825966B2 (en) * | 2007-06-29 | 2010-11-02 | Omnivision Technologies, Inc. | High dynamic range sensor with blooming drain |
WO2009042901A1 (en) | 2007-09-28 | 2009-04-02 | Regents Of The University Of Minnesota | Image sensor with high dynamic range imaging and integrated motion detection |
KR101385250B1 (ko) * | 2007-12-11 | 2014-04-16 | 삼성전자주식회사 | Cmos 이미지 센서 |
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EP2180513A1 (en) * | 2008-10-27 | 2010-04-28 | Stmicroelectronics SA | Near infrared/color image sensor |
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IT1392366B1 (it) * | 2008-12-17 | 2012-02-28 | St Microelectronics Rousset | Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione |
JP5251563B2 (ja) | 2009-02-04 | 2013-07-31 | 日本テキサス・インスツルメンツ株式会社 | 撮像装置 |
US8405750B2 (en) | 2009-06-08 | 2013-03-26 | Aptina Imaging Corporation | Image sensors and image reconstruction methods for capturing high dynamic range images |
KR101084940B1 (ko) * | 2009-09-28 | 2011-11-17 | 삼성전기주식회사 | 실리콘 광전자 증배관 |
KR101777351B1 (ko) * | 2011-05-16 | 2017-09-11 | 삼성전자주식회사 | 촬상 소자, 이를 이용한 디지털 촬영 장치, 오토 포커싱 방법, 및 상기 방법을 수행하기 위한 컴퓨터 판독가능 저장매체 |
JP5646421B2 (ja) * | 2011-09-22 | 2014-12-24 | 株式会社東芝 | 固体撮像装置および固体撮像システム |
US8970706B2 (en) | 2011-09-22 | 2015-03-03 | Basil Henry Scott | Dual pixel pitch imaging array with extended dynamic range |
US9568606B2 (en) * | 2012-03-29 | 2017-02-14 | Canon Kabushiki Kaisha | Imaging apparatus for distance detection using high and low sensitivity sensors with inverted positional relations |
US8969775B2 (en) | 2013-02-28 | 2015-03-03 | Omnivision Technologies, Inc. | High dynamic range pixel having a plurality of amplifier transistors |
US20140246561A1 (en) | 2013-03-04 | 2014-09-04 | Omnivision Technologies, Inc. | High dynamic range pixel having a plurality of photodiodes with a single implant |
US9305949B2 (en) | 2013-11-01 | 2016-04-05 | Omnivision Technologies, Inc. | Big-small pixel scheme for image sensors |
US9324759B2 (en) | 2013-12-19 | 2016-04-26 | Omnivision Technologies, Inc. | Image sensor pixel for high dynamic range image sensor |
-
2013
- 2013-12-19 US US14/135,066 patent/US9324759B2/en active Active
-
2014
- 2014-03-03 CN CN201410074474.0A patent/CN104733480B/zh active Active
- 2014-03-03 CN CN201710719643.5A patent/CN107611150B/zh active Active
- 2014-03-03 CN CN201710719097.5A patent/CN107644885B/zh active Active
- 2014-03-27 TW TW105112856A patent/TWI591812B/zh active
- 2014-03-27 TW TW103111546A patent/TWI549275B/zh active
- 2014-03-27 TW TW105112857A patent/TWI587494B/zh active
-
2015
- 2015-08-19 HK HK15108035.3A patent/HK1207473A1/zh unknown
-
2016
- 2016-03-02 US US15/059,196 patent/US9608019B2/en active Active
- 2016-03-02 US US15/059,182 patent/US9711546B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9608019B2 (en) | 2017-03-28 |
TW201526213A (zh) | 2015-07-01 |
CN107644885B (zh) | 2019-05-31 |
CN104733480A (zh) | 2015-06-24 |
US20150179695A1 (en) | 2015-06-25 |
CN104733480B (zh) | 2018-01-23 |
TW201628181A (zh) | 2016-08-01 |
US20160181296A1 (en) | 2016-06-23 |
CN107644885A (zh) | 2018-01-30 |
US9711546B2 (en) | 2017-07-18 |
TW201628182A (zh) | 2016-08-01 |
US9324759B2 (en) | 2016-04-26 |
US20160181297A1 (en) | 2016-06-23 |
CN107611150A (zh) | 2018-01-19 |
TWI549275B (zh) | 2016-09-11 |
CN107611150B (zh) | 2019-07-12 |
TWI587494B (zh) | 2017-06-11 |
TWI591812B (zh) | 2017-07-11 |
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