HK1207473A1 - 用於高動態範圍圖像傳感器的圖像傳感器像素 - Google Patents

用於高動態範圍圖像傳感器的圖像傳感器像素

Info

Publication number
HK1207473A1
HK1207473A1 HK15108035.3A HK15108035A HK1207473A1 HK 1207473 A1 HK1207473 A1 HK 1207473A1 HK 15108035 A HK15108035 A HK 15108035A HK 1207473 A1 HK1207473 A1 HK 1207473A1
Authority
HK
Hong Kong
Prior art keywords
image sensor
dynamic range
high dynamic
pixel
range image
Prior art date
Application number
HK15108035.3A
Other languages
English (en)
Inventor
柳政澔
真鍋宗平
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Publication of HK1207473A1 publication Critical patent/HK1207473A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
HK15108035.3A 2013-12-19 2015-08-19 用於高動態範圍圖像傳感器的圖像傳感器像素 HK1207473A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/135,066 US9324759B2 (en) 2013-12-19 2013-12-19 Image sensor pixel for high dynamic range image sensor

Publications (1)

Publication Number Publication Date
HK1207473A1 true HK1207473A1 (zh) 2016-01-29

Family

ID=53400941

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15108035.3A HK1207473A1 (zh) 2013-12-19 2015-08-19 用於高動態範圍圖像傳感器的圖像傳感器像素

Country Status (4)

Country Link
US (3) US9324759B2 (zh)
CN (3) CN104733480B (zh)
HK (1) HK1207473A1 (zh)
TW (3) TWI591812B (zh)

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US9324759B2 (en) 2013-12-19 2016-04-26 Omnivision Technologies, Inc. Image sensor pixel for high dynamic range image sensor
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JP6808623B2 (ja) * 2015-07-08 2021-01-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および駆動方法、並びに電子機器
JP2017054966A (ja) * 2015-09-10 2017-03-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
CA3017935C (en) * 2016-03-16 2020-04-21 BAE Systems Imaging Solutions Inc. High dynamic range imaging sensor array
CN106331434B (zh) * 2016-09-05 2019-09-06 深圳安芯微电子有限公司 图像处理装置与方法
CN108024075B (zh) * 2016-10-28 2019-10-11 原相科技股份有限公司 全局快门高动态范围像素及影像传感器
US9888185B1 (en) * 2016-12-20 2018-02-06 Omnivision Technologies, Inc. Row decoder for high dynamic range image sensor using in-frame multi-bit exposure control
CN107426472A (zh) * 2017-06-01 2017-12-01 深圳市矽旺半导体有限公司 宽动态范围图像传感器***及其实现方法
US10334191B1 (en) * 2018-03-02 2019-06-25 Omnivision Technologies, Inc. Pixel array with embedded split pixels for high dynamic range imaging
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US11212457B2 (en) * 2020-05-28 2021-12-28 Omnivision Technologies, Inc. High dynamic range CMOS image sensor design
CN111866414B (zh) * 2020-07-15 2021-08-20 大连理工大学 高动态图像传感器像素结构及时序控制方法
CN112563299B (zh) * 2020-12-10 2023-03-24 成都微光集电科技有限公司 Cmos图像传感器及其制备方法

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Also Published As

Publication number Publication date
US9608019B2 (en) 2017-03-28
TW201526213A (zh) 2015-07-01
CN107644885B (zh) 2019-05-31
CN104733480A (zh) 2015-06-24
US20150179695A1 (en) 2015-06-25
CN104733480B (zh) 2018-01-23
TW201628181A (zh) 2016-08-01
US20160181296A1 (en) 2016-06-23
CN107644885A (zh) 2018-01-30
US9711546B2 (en) 2017-07-18
TW201628182A (zh) 2016-08-01
US9324759B2 (en) 2016-04-26
US20160181297A1 (en) 2016-06-23
CN107611150A (zh) 2018-01-19
TWI549275B (zh) 2016-09-11
CN107611150B (zh) 2019-07-12
TWI587494B (zh) 2017-06-11
TWI591812B (zh) 2017-07-11

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