HK1190825A1 - 具有改良性能的大型互補金屬氧化物半導體圖像傳感器像素 - Google Patents

具有改良性能的大型互補金屬氧化物半導體圖像傳感器像素

Info

Publication number
HK1190825A1
HK1190825A1 HK14103884.7A HK14103884A HK1190825A1 HK 1190825 A1 HK1190825 A1 HK 1190825A1 HK 14103884 A HK14103884 A HK 14103884A HK 1190825 A1 HK1190825 A1 HK 1190825A1
Authority
HK
Hong Kong
Prior art keywords
image sensor
cmos image
improved performance
sensor pixel
large cmos
Prior art date
Application number
HK14103884.7A
Other languages
English (en)
Inventor
陳剛
毛杜立
戴幸志
Original Assignee
豪威科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 豪威科技股份有限公司 filed Critical 豪威科技股份有限公司
Publication of HK1190825A1 publication Critical patent/HK1190825A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK14103884.7A 2012-07-06 2014-04-23 具有改良性能的大型互補金屬氧化物半導體圖像傳感器像素 HK1190825A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/543,592 US8581307B1 (en) 2012-07-06 2012-07-06 Large CMOS image sensor pixel with improved performance

Publications (1)

Publication Number Publication Date
HK1190825A1 true HK1190825A1 (zh) 2014-07-11

Family

ID=48745641

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14103884.7A HK1190825A1 (zh) 2012-07-06 2014-04-23 具有改良性能的大型互補金屬氧化物半導體圖像傳感器像素

Country Status (5)

Country Link
US (1) US8581307B1 (zh)
EP (1) EP2682988A3 (zh)
CN (1) CN103531598B (zh)
HK (1) HK1190825A1 (zh)
TW (1) TWI532158B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9435641B2 (en) * 2013-06-20 2016-09-06 Analog Devices, Inc. Optical angle measurement
US9274202B2 (en) 2013-06-20 2016-03-01 Analog Devices, Inc. Optical time-of-flight system
US9812603B2 (en) * 2014-05-30 2017-11-07 Klaus Y. J. Hsu Photosensing device with graphene
US9812604B2 (en) * 2014-05-30 2017-11-07 Klaus Y. J. Hsu Photosensing device with graphene
CN104143558B (zh) * 2014-08-15 2018-03-27 北京思比科微电子技术股份有限公司 一种提高阱容量的图像传感器像素及其制作方法
JP6729381B2 (ja) * 2014-10-06 2020-07-22 ソニー株式会社 固体撮像装置、及び、電子機器
CN104269421B (zh) * 2014-10-14 2017-03-22 北京思比科微电子技术股份有限公司 灵敏度自适应的图像传感器像素结构
US10163959B2 (en) * 2015-11-16 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor and method for manufacturing the same
CN107665898B (zh) * 2016-07-28 2021-03-23 中芯国际集成电路制造(上海)有限公司 一种cmos图像传感器及其制备方法和电子装置
CN110729320A (zh) * 2019-10-18 2020-01-24 深圳市光微科技有限公司 像素单元、包含该像素单元的tof图像传感器以及成像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147372A (en) * 1999-02-08 2000-11-14 Taiwan Semiconductor Manufacturing Company Layout of an image sensor for increasing photon induced current
US7605415B2 (en) * 2004-06-07 2009-10-20 Canon Kabushiki Kaisha Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring
US20070023796A1 (en) * 2005-07-27 2007-02-01 International Business Machines Corporation Pinning layer for pixel sensor cell and method thereof
US7683448B2 (en) * 2005-12-29 2010-03-23 Dongbu Electronics Co., Ltd. CMOS image sensor
US8027561B2 (en) * 2006-08-24 2011-09-27 At&T Intellectual Property I, L.P. Methods, devices and computer program products for event-based media file tagging
JP5374941B2 (ja) * 2008-07-02 2013-12-25 ソニー株式会社 固体撮像装置及び電子機器
US7952096B2 (en) * 2008-12-08 2011-05-31 Omnivision Technologies, Inc. CMOS image sensor with improved backside surface treatment
US20110032405A1 (en) * 2009-08-07 2011-02-10 Omnivision Technologies, Inc. Image sensor with transfer gate having multiple channel sub-regions

Also Published As

Publication number Publication date
TWI532158B (zh) 2016-05-01
US8581307B1 (en) 2013-11-12
EP2682988A2 (en) 2014-01-08
CN103531598B (zh) 2016-02-10
TW201403803A (zh) 2014-01-16
CN103531598A (zh) 2014-01-22
EP2682988A3 (en) 2016-06-22

Similar Documents

Publication Publication Date Title
EP2805353A4 (en) SOLID BULB SENSOR AND CAMERA
HK1207550A1 (zh) 具有最小面積單片式 圖像傳感器的相機系統
ZA201407903B (en) Liminance changing image processing with color constraints
HK1209901A1 (zh) 用於圖像傳感器的大-小像素方案及其使用
EP3078191A4 (en) High dynamic-range image sensor
HK1190825A1 (zh) 具有改良性能的大型互補金屬氧化物半導體圖像傳感器像素
GB201217721D0 (en) Video image processing
HK1188330A1 (zh) 雙側圖像傳感器
HK1201986A1 (zh) 擁有具有增加的光學串擾的像素的圖像傳感器及其使用
EP2849423A4 (en) IMAGE SENSOR
IL231098B (en) Pixel grouping image sensor
EP2677736A4 (en) PICTURES MODULE
GB201021144D0 (en) Improved image sensor arrangement
EP2800379A4 (en) COLOR IMAGING ELEMENT
GB2517559B (en) Solid-state image sensor
TWI561845B (en) Image lens
EP2770732A4 (en) SOLID BODY SENSOR AND CAMERA SYSTEM
HK1179756A1 (zh) 具有外圍溝槽電容器的互補金屬氧化物半導體圖像傳感器
EP2685711A4 (en) DEVICE FOR RECORDING COLOR PICTURES
EP2799913A4 (en) SET OF OPTICAL ELEMENTS AND SOLID BODY SENSOR THEREWITH
EP2911203A4 (en) SOLID STATE IMAGE RECORDING ELEMENT
EP2800384A4 (en) COLOR IMAGING ELEMENT
EP2690871A4 (en) COLOR IMAGING ELEMENT, IMAGING DEVICE, AND IMAGING PROGRAM
EP2920823A4 (en) PIXEL CMOS MULTI POCKET (MP)
HK1185487A1 (zh) 用於 圖像傳感器的可變電壓行驅動器