HK1183162A1 - 用於提供圖像傳感器像素中的經改進全阱容量的方法、設備及系統 - Google Patents
用於提供圖像傳感器像素中的經改進全阱容量的方法、設備及系統Info
- Publication number
- HK1183162A1 HK1183162A1 HK13110329.6A HK13110329A HK1183162A1 HK 1183162 A1 HK1183162 A1 HK 1183162A1 HK 13110329 A HK13110329 A HK 13110329A HK 1183162 A1 HK1183162 A1 HK 1183162A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensor
- providing improved
- sensor pixel
- full well
- well capacity
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/288,880 US8804021B2 (en) | 2011-11-03 | 2011-11-03 | Method, apparatus and system for providing improved full well capacity in an image sensor pixel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1183162A1 true HK1183162A1 (zh) | 2013-12-13 |
Family
ID=47227478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK13110329.6A HK1183162A1 (zh) | 2011-11-03 | 2013-09-05 | 用於提供圖像傳感器像素中的經改進全阱容量的方法、設備及系統 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8804021B2 (zh) |
| EP (1) | EP2590220B1 (zh) |
| CN (1) | CN103094292B (zh) |
| HK (1) | HK1183162A1 (zh) |
| TW (1) | TWI520318B (zh) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU628040B2 (en) * | 1989-02-08 | 1992-09-10 | Stahls' Special Projects, Inc. | Heat sealing machine |
| US8883544B2 (en) * | 2012-05-04 | 2014-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming an image device |
| KR102034482B1 (ko) | 2013-03-04 | 2019-10-21 | 삼성전자주식회사 | 이미지 센서 및 이의 형성 방법 |
| JP2014199898A (ja) * | 2013-03-11 | 2014-10-23 | ソニー株式会社 | 固体撮像素子および製造方法、並びに、電子機器 |
| KR102438482B1 (ko) * | 2014-03-17 | 2022-09-02 | 인튜어티브 서지컬 오퍼레이션즈 인코포레이티드 | 비백색광 일반 조명기를 포함하는 수술 시스템 |
| CN104143558B (zh) * | 2014-08-15 | 2018-03-27 | 北京思比科微电子技术股份有限公司 | 一种提高阱容量的图像传感器像素及其制作方法 |
| US9111993B1 (en) * | 2014-08-21 | 2015-08-18 | Omnivision Technologies, Inc. | Conductive trench isolation |
| JP6362478B2 (ja) * | 2014-08-27 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| KR102301778B1 (ko) | 2014-08-28 | 2021-09-13 | 삼성전자주식회사 | 이미지 센서, 및 상기 이미지 센서의 픽셀 |
| US9923003B2 (en) * | 2015-06-30 | 2018-03-20 | Microsoft Technology Licensing, Llc | CMOS image sensor with a reduced likelihood of an induced electric field in the epitaxial layer |
| US10250826B2 (en) | 2016-01-15 | 2019-04-02 | Invisage Technologies, Inc. | Image sensors having extended dynamic range |
| US9930281B2 (en) * | 2016-01-20 | 2018-03-27 | Semiconductor Components Industries, Llc | Image sensors having photodiode regions implanted from multiple sides of a substrate |
| US10917625B1 (en) | 2016-10-20 | 2021-02-09 | Facebook Technologies, Llc | Time multiplexed dual-band sensor |
| AU2017382316B2 (en) * | 2016-12-22 | 2023-02-09 | Quantum-Si Incorporated | Integrated photodetector with direct binning pixel |
| FR3065836B1 (fr) | 2017-04-28 | 2020-02-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Zone de stockage pour un pixel d'une matrice d'image |
| US10419701B2 (en) | 2017-06-26 | 2019-09-17 | Facebook Technologies, Llc | Digital pixel image sensor |
| US10686996B2 (en) | 2017-06-26 | 2020-06-16 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
| JP6985054B2 (ja) * | 2017-08-01 | 2021-12-22 | スタンレー電気株式会社 | 撮像装置 |
| DE102018106267A1 (de) | 2017-08-15 | 2019-02-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | Neuartiger bildsensor |
| US10777591B2 (en) * | 2017-08-15 | 2020-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device |
| US10598546B2 (en) | 2017-08-17 | 2020-03-24 | Facebook Technologies, Llc | Detecting high intensity light in photo sensor |
| JP2019083266A (ja) * | 2017-10-31 | 2019-05-30 | スタンレー電気株式会社 | 撮像装置及び撮像素子 |
| US11393867B2 (en) | 2017-12-06 | 2022-07-19 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
| US10969273B2 (en) | 2018-03-19 | 2021-04-06 | Facebook Technologies, Llc | Analog-to-digital converter having programmable quantization resolution |
| US11004881B2 (en) | 2018-04-03 | 2021-05-11 | Facebook Technologies, Llc | Global shutter image sensor |
| US10923523B2 (en) | 2018-04-16 | 2021-02-16 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
| US11233085B2 (en) * | 2018-05-09 | 2022-01-25 | Facebook Technologies, Llc | Multi-photo pixel cell having vertical gate structure |
| US10903260B2 (en) * | 2018-06-11 | 2021-01-26 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
| US11089210B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Configurable image sensor |
| US11089241B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Pixel cell with multiple photodiodes |
| US11906353B2 (en) | 2018-06-11 | 2024-02-20 | Meta Platforms Technologies, Llc | Digital pixel with extended dynamic range |
| US11463636B2 (en) | 2018-06-27 | 2022-10-04 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
| US10897586B2 (en) | 2018-06-28 | 2021-01-19 | Facebook Technologies, Llc | Global shutter image sensor |
| US10931884B2 (en) | 2018-08-20 | 2021-02-23 | Facebook Technologies, Llc | Pixel sensor having adaptive exposure time |
| US11956413B2 (en) | 2018-08-27 | 2024-04-09 | Meta Platforms Technologies, Llc | Pixel sensor having multiple photodiodes and shared comparator |
| US11595602B2 (en) | 2018-11-05 | 2023-02-28 | Meta Platforms Technologies, Llc | Image sensor post processing |
| US11102430B2 (en) | 2018-12-10 | 2021-08-24 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
| US11218660B1 (en) | 2019-03-26 | 2022-01-04 | Facebook Technologies, Llc | Pixel sensor having shared readout structure |
| US11943561B2 (en) | 2019-06-13 | 2024-03-26 | Meta Platforms Technologies, Llc | Non-linear quantization at pixel sensor |
| US11936998B1 (en) | 2019-10-17 | 2024-03-19 | Meta Platforms Technologies, Llc | Digital pixel sensor having extended dynamic range |
| US11902685B1 (en) | 2020-04-28 | 2024-02-13 | Meta Platforms Technologies, Llc | Pixel sensor having hierarchical memory |
| US11910114B2 (en) | 2020-07-17 | 2024-02-20 | Meta Platforms Technologies, Llc | Multi-mode image sensor |
| US11956560B2 (en) | 2020-10-09 | 2024-04-09 | Meta Platforms Technologies, Llc | Digital pixel sensor having reduced quantization operation |
| US12022218B2 (en) | 2020-12-29 | 2024-06-25 | Meta Platforms Technologies, Llc | Digital image sensor using a single-input comparator based quantizer |
| FR3127329B1 (fr) * | 2021-09-17 | 2024-01-26 | St Microelectronics Crolles 2 Sas | Pixel d'image et de profondeur |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851886A (en) * | 1995-10-23 | 1998-12-22 | Advanced Micro Devices, Inc. | Method of large angle tilt implant of channel region |
| US6690423B1 (en) * | 1998-03-19 | 2004-02-10 | Kabushiki Kaisha Toshiba | Solid-state image pickup apparatus |
| US6465820B1 (en) | 1998-09-16 | 2002-10-15 | Dalsa, Inc. | CMOS compatible single phase CCD charge transfer device |
| JP2001308304A (ja) | 2000-04-19 | 2001-11-02 | Sony Corp | 固体撮像素子の製造方法 |
| US7420233B2 (en) * | 2003-10-22 | 2008-09-02 | Micron Technology, Inc. | Photodiode for improved transfer gate leakage |
| KR100808950B1 (ko) * | 2007-01-30 | 2008-03-04 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 제조 방법 |
| US7459668B2 (en) * | 2007-03-06 | 2008-12-02 | Micron Technology, Inc. | Method, apparatus, and system to reduce ground resistance in a pixel array |
| JP2010161236A (ja) | 2009-01-08 | 2010-07-22 | Canon Inc | 光電変換装置の製造方法 |
| US8405751B2 (en) | 2009-08-03 | 2013-03-26 | International Business Machines Corporation | Image sensor pixel structure employing a shared floating diffusion |
| US8658956B2 (en) * | 2009-10-20 | 2014-02-25 | Omnivision Technologies, Inc. | Trench transfer gate for increased pixel fill factor |
-
2011
- 2011-11-03 US US13/288,880 patent/US8804021B2/en active Active
-
2012
- 2012-10-31 EP EP12190843.8A patent/EP2590220B1/en active Active
- 2012-11-01 TW TW101140615A patent/TWI520318B/zh active
- 2012-11-02 CN CN201210432093.6A patent/CN103094292B/zh active Active
-
2013
- 2013-09-05 HK HK13110329.6A patent/HK1183162A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US8804021B2 (en) | 2014-08-12 |
| EP2590220A3 (en) | 2013-08-28 |
| EP2590220A2 (en) | 2013-05-08 |
| EP2590220B1 (en) | 2018-06-27 |
| US20130113969A1 (en) | 2013-05-09 |
| TW201327793A (zh) | 2013-07-01 |
| TWI520318B (zh) | 2016-02-01 |
| CN103094292A (zh) | 2013-05-08 |
| CN103094292B (zh) | 2015-12-09 |
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