HK1160986A1 - 含埋置絶緣層和穿過其的垂直導電結構的電子器件及方法 - Google Patents
含埋置絶緣層和穿過其的垂直導電結構的電子器件及方法Info
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- HK1160986A1 HK1160986A1 HK12101209.1A HK12101209A HK1160986A1 HK 1160986 A1 HK1160986 A1 HK 1160986A1 HK 12101209 A HK12101209 A HK 12101209A HK 1160986 A1 HK1160986 A1 HK 1160986A1
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- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
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- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/702,055 US8299560B2 (en) | 2010-02-08 | 2010-02-08 | Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the same |
Publications (1)
Publication Number | Publication Date |
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HK1160986A1 true HK1160986A1 (zh) | 2012-08-17 |
Family
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HK12101209.1A HK1160986A1 (zh) | 2010-02-08 | 2012-02-08 | 含埋置絶緣層和穿過其的垂直導電結構的電子器件及方法 |
Country Status (5)
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US (1) | US8299560B2 (zh) |
KR (1) | KR101787352B1 (zh) |
CN (1) | CN102169898B (zh) |
HK (1) | HK1160986A1 (zh) |
TW (1) | TWI446537B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US8222695B2 (en) * | 2009-06-30 | 2012-07-17 | Semiconductor Components Industries, Llc | Process of forming an electronic device including an integrated circuit with transistors coupled to each other |
US8530304B2 (en) | 2011-06-14 | 2013-09-10 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a gate electrode and a gate tap |
US8647970B2 (en) * | 2011-12-15 | 2014-02-11 | Semiconductor Components Industries, Llc | Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench |
US8541302B2 (en) | 2011-12-15 | 2013-09-24 | Semiconductor Components Industries, Llc | Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same |
US8592279B2 (en) * | 2011-12-15 | 2013-11-26 | Semicondcutor Components Industries, LLC | Electronic device including a tapered trench and a conductive structure therein and a process of forming the same |
US8679919B2 (en) | 2011-12-15 | 2014-03-25 | Semiconductor Components Industries, Llc | Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same |
US8928050B2 (en) * | 2013-03-11 | 2015-01-06 | Semiconductor Components Industries, Llc | Electronic device including a schottky contact |
US9412862B2 (en) * | 2013-03-11 | 2016-08-09 | Semiconductor Components Industries, Llc | Electronic device including a conductive electrode and a process of forming the same |
US9070562B2 (en) | 2013-03-11 | 2015-06-30 | Semiconductor Components Industries, Llc | Circuit including a switching element, a rectifying element, and a charge storage element |
CN104051416B (zh) * | 2013-03-15 | 2018-04-13 | 半导体元件工业有限责任公司 | 包括垂直导电区域的电子设备及其形成工艺 |
US9466698B2 (en) * | 2013-03-15 | 2016-10-11 | Semiconductor Components Industries, Llc | Electronic device including vertical conductive regions and a process of forming the same |
US10153213B2 (en) | 2015-08-27 | 2018-12-11 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a drift region, a sinker region and a resurf region |
US10157778B2 (en) * | 2016-05-31 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and manufacturing method thereof |
US10636873B2 (en) * | 2017-11-22 | 2020-04-28 | Vanguard International Semiconductor Corporation | Method of fabricating semiconductor device |
US11302776B1 (en) | 2021-05-31 | 2022-04-12 | Genesic Semiconductor Inc. | Method and manufacture of robust, high-performance devices |
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US4710477A (en) | 1983-09-12 | 1987-12-01 | Hughes Aircraft Company | Method for forming latch-up immune, multiple retrograde well high density CMOS FET |
US4633289A (en) | 1983-09-12 | 1986-12-30 | Hughes Aircraft Company | Latch-up immune, multiple retrograde well high density CMOS FET |
US5559044A (en) | 1992-09-21 | 1996-09-24 | Siliconix Incorporated | BiCDMOS process technology |
JPH08335684A (ja) | 1995-06-08 | 1996-12-17 | Toshiba Corp | 半導体装置 |
US6252278B1 (en) | 1998-05-18 | 2001-06-26 | Monolithic Power Systems, Inc. | Self-aligned lateral DMOS with spacer drift region |
US6812526B2 (en) | 2000-03-01 | 2004-11-02 | General Semiconductor, Inc. | Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface |
US6764940B1 (en) | 2001-03-13 | 2004-07-20 | Novellus Systems, Inc. | Method for depositing a diffusion barrier for copper interconnect applications |
US6498057B1 (en) * | 2002-03-07 | 2002-12-24 | International Business Machines Corporation | Method for implementing SOI transistor source connections using buried dual rail distribution |
US7052939B2 (en) | 2002-11-26 | 2006-05-30 | Freescale Semiconductor, Inc. | Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications |
US6890804B1 (en) * | 2003-11-21 | 2005-05-10 | Agere Systems, Inc. | Metal-oxide-semiconductor device formed in silicon-on-insulator |
SE0303106D0 (sv) | 2003-11-21 | 2003-11-21 | Infineon Technologies Ag | Ldmos transistor device, integrated circuit, and fabrication method thereof |
US7439583B2 (en) | 2004-12-27 | 2008-10-21 | Third Dimension (3D) Semiconductor, Inc. | Tungsten plug drain extension |
US7276747B2 (en) | 2005-04-25 | 2007-10-02 | Semiconductor Components Industries, L.L.C. | Semiconductor device having screening electrode and method |
US7256119B2 (en) | 2005-05-20 | 2007-08-14 | Semiconductor Components Industries, L.L.C. | Semiconductor device having trench structures and method |
US8692324B2 (en) | 2005-07-13 | 2014-04-08 | Ciclon Semiconductor Device Corp. | Semiconductor devices having charge balanced structure |
DE102005046624B3 (de) * | 2005-09-29 | 2007-03-22 | Atmel Germany Gmbh | Verfahren zur Herstellung einer Halbleiteranordnung |
US7446375B2 (en) | 2006-03-14 | 2008-11-04 | Ciclon Semiconductor Device Corp. | Quasi-vertical LDMOS device having closed cell layout |
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JP4487972B2 (ja) * | 2006-04-26 | 2010-06-23 | パナソニック株式会社 | 光ディスクドライブ装置 |
TW200812066A (en) | 2006-05-30 | 2008-03-01 | Renesas Tech Corp | Semiconductor device and power source unit using the same |
US8188543B2 (en) | 2006-11-03 | 2012-05-29 | Freescale Semiconductor, Inc. | Electronic device including a conductive structure extending through a buried insulating layer |
US7952145B2 (en) | 2007-02-20 | 2011-05-31 | Texas Instruments Lehigh Valley Incorporated | MOS transistor device in common source configuration |
US7482645B2 (en) | 2007-03-30 | 2009-01-27 | Fairchild Semiconductor Corporation | Method and structure for making a top-side contact to a substrate |
-
2010
- 2010-02-08 US US12/702,055 patent/US8299560B2/en active Active
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2011
- 2011-01-26 TW TW100102966A patent/TWI446537B/zh active
- 2011-01-31 CN CN201110033512.4A patent/CN102169898B/zh not_active Expired - Fee Related
- 2011-02-01 KR KR1020110010049A patent/KR101787352B1/ko active IP Right Grant
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2012
- 2012-02-08 HK HK12101209.1A patent/HK1160986A1/zh not_active IP Right Cessation
Also Published As
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CN102169898B (zh) | 2015-12-02 |
TWI446537B (zh) | 2014-07-21 |
KR20110092222A (ko) | 2011-08-17 |
TW201140835A (en) | 2011-11-16 |
US20110193160A1 (en) | 2011-08-11 |
KR101787352B1 (ko) | 2017-10-19 |
US8299560B2 (en) | 2012-10-30 |
CN102169898A (zh) | 2011-08-31 |
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