HK1160986A1 - 含埋置絶緣層和穿過其的垂直導電結構的電子器件及方法 - Google Patents

含埋置絶緣層和穿過其的垂直導電結構的電子器件及方法

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Publication number
HK1160986A1
HK1160986A1 HK12101209.1A HK12101209A HK1160986A1 HK 1160986 A1 HK1160986 A1 HK 1160986A1 HK 12101209 A HK12101209 A HK 12101209A HK 1160986 A1 HK1160986 A1 HK 1160986A1
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Hong Kong
Prior art keywords
electronic device
insulating layer
forming
device including
same
Prior art date
Application number
HK12101209.1A
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English (en)
Inventor
．羅切爾特
．格裡瓦納
．茲德貝爾
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半導體元件工業有限責任公司
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Publication of HK1160986A1 publication Critical patent/HK1160986A1/zh

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    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • General Physics & Mathematics (AREA)
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  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
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HK12101209.1A 2010-02-08 2012-02-08 含埋置絶緣層和穿過其的垂直導電結構的電子器件及方法 HK1160986A1 (zh)

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222695B2 (en) * 2009-06-30 2012-07-17 Semiconductor Components Industries, Llc Process of forming an electronic device including an integrated circuit with transistors coupled to each other
US8530304B2 (en) 2011-06-14 2013-09-10 Semiconductor Components Industries, Llc Process of forming an electronic device including a gate electrode and a gate tap
US8647970B2 (en) * 2011-12-15 2014-02-11 Semiconductor Components Industries, Llc Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench
US8541302B2 (en) 2011-12-15 2013-09-24 Semiconductor Components Industries, Llc Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same
US8592279B2 (en) * 2011-12-15 2013-11-26 Semicondcutor Components Industries, LLC Electronic device including a tapered trench and a conductive structure therein and a process of forming the same
US8679919B2 (en) 2011-12-15 2014-03-25 Semiconductor Components Industries, Llc Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same
US8928050B2 (en) * 2013-03-11 2015-01-06 Semiconductor Components Industries, Llc Electronic device including a schottky contact
US9412862B2 (en) * 2013-03-11 2016-08-09 Semiconductor Components Industries, Llc Electronic device including a conductive electrode and a process of forming the same
US9070562B2 (en) 2013-03-11 2015-06-30 Semiconductor Components Industries, Llc Circuit including a switching element, a rectifying element, and a charge storage element
CN104051416B (zh) * 2013-03-15 2018-04-13 半导体元件工业有限责任公司 包括垂直导电区域的电子设备及其形成工艺
US9466698B2 (en) * 2013-03-15 2016-10-11 Semiconductor Components Industries, Llc Electronic device including vertical conductive regions and a process of forming the same
US10153213B2 (en) 2015-08-27 2018-12-11 Semiconductor Components Industries, Llc Process of forming an electronic device including a drift region, a sinker region and a resurf region
US10157778B2 (en) * 2016-05-31 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10636873B2 (en) * 2017-11-22 2020-04-28 Vanguard International Semiconductor Corporation Method of fabricating semiconductor device
US11302776B1 (en) 2021-05-31 2022-04-12 Genesic Semiconductor Inc. Method and manufacture of robust, high-performance devices

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4710477A (en) 1983-09-12 1987-12-01 Hughes Aircraft Company Method for forming latch-up immune, multiple retrograde well high density CMOS FET
US4633289A (en) 1983-09-12 1986-12-30 Hughes Aircraft Company Latch-up immune, multiple retrograde well high density CMOS FET
US5559044A (en) 1992-09-21 1996-09-24 Siliconix Incorporated BiCDMOS process technology
JPH08335684A (ja) 1995-06-08 1996-12-17 Toshiba Corp 半導体装置
US6252278B1 (en) 1998-05-18 2001-06-26 Monolithic Power Systems, Inc. Self-aligned lateral DMOS with spacer drift region
US6812526B2 (en) 2000-03-01 2004-11-02 General Semiconductor, Inc. Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US6498057B1 (en) * 2002-03-07 2002-12-24 International Business Machines Corporation Method for implementing SOI transistor source connections using buried dual rail distribution
US7052939B2 (en) 2002-11-26 2006-05-30 Freescale Semiconductor, Inc. Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications
US6890804B1 (en) * 2003-11-21 2005-05-10 Agere Systems, Inc. Metal-oxide-semiconductor device formed in silicon-on-insulator
SE0303106D0 (sv) 2003-11-21 2003-11-21 Infineon Technologies Ag Ldmos transistor device, integrated circuit, and fabrication method thereof
US7439583B2 (en) 2004-12-27 2008-10-21 Third Dimension (3D) Semiconductor, Inc. Tungsten plug drain extension
US7276747B2 (en) 2005-04-25 2007-10-02 Semiconductor Components Industries, L.L.C. Semiconductor device having screening electrode and method
US7256119B2 (en) 2005-05-20 2007-08-14 Semiconductor Components Industries, L.L.C. Semiconductor device having trench structures and method
US8692324B2 (en) 2005-07-13 2014-04-08 Ciclon Semiconductor Device Corp. Semiconductor devices having charge balanced structure
DE102005046624B3 (de) * 2005-09-29 2007-03-22 Atmel Germany Gmbh Verfahren zur Herstellung einer Halbleiteranordnung
US7446375B2 (en) 2006-03-14 2008-11-04 Ciclon Semiconductor Device Corp. Quasi-vertical LDMOS device having closed cell layout
US20070228463A1 (en) 2006-04-03 2007-10-04 Jun Cai Self-aligned complementary ldmos
JP4487972B2 (ja) * 2006-04-26 2010-06-23 パナソニック株式会社 光ディスクドライブ装置
TW200812066A (en) 2006-05-30 2008-03-01 Renesas Tech Corp Semiconductor device and power source unit using the same
US8188543B2 (en) 2006-11-03 2012-05-29 Freescale Semiconductor, Inc. Electronic device including a conductive structure extending through a buried insulating layer
US7952145B2 (en) 2007-02-20 2011-05-31 Texas Instruments Lehigh Valley Incorporated MOS transistor device in common source configuration
US7482645B2 (en) 2007-03-30 2009-01-27 Fairchild Semiconductor Corporation Method and structure for making a top-side contact to a substrate

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TW201140835A (en) 2011-11-16
US20110193160A1 (en) 2011-08-11
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