HK1112268A1 - Method for producing gan or algan crystals - Google Patents

Method for producing gan or algan crystals

Info

Publication number
HK1112268A1
HK1112268A1 HK08100209.9A HK08100209A HK1112268A1 HK 1112268 A1 HK1112268 A1 HK 1112268A1 HK 08100209 A HK08100209 A HK 08100209A HK 1112268 A1 HK1112268 A1 HK 1112268A1
Authority
HK
Hong Kong
Prior art keywords
gallium
metal melt
gas
gas flow
aluminium
Prior art date
Application number
HK08100209.9A
Other languages
English (en)
Inventor
Armin Dadgar
Alois Krost
Original Assignee
Azzurro Semiconductors Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Azzurro Semiconductors Ag filed Critical Azzurro Semiconductors Ag
Publication of HK1112268A1 publication Critical patent/HK1112268A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
HK08100209.9A 2004-10-16 2008-01-08 Method for producing gan or algan crystals HK1112268A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004050806A DE102004050806A1 (de) 2004-10-16 2004-10-16 Verfahren zur Herstellung von (AI,Ga)N Einkristallen
PCT/EP2005/055320 WO2006040359A1 (de) 2004-10-16 2005-10-17 Verfahren zur herstellung von gan- oder algan-kristallen

Publications (1)

Publication Number Publication Date
HK1112268A1 true HK1112268A1 (en) 2008-08-29

Family

ID=35810851

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08100209.9A HK1112268A1 (en) 2004-10-16 2008-01-08 Method for producing gan or algan crystals

Country Status (11)

Country Link
US (1) US20090199763A1 (ja)
EP (1) EP1805353B1 (ja)
JP (1) JP2008516877A (ja)
KR (1) KR20070084283A (ja)
CN (1) CN101080516B (ja)
AT (1) ATE541963T1 (ja)
CA (1) CA2583592C (ja)
DE (1) DE102004050806A1 (ja)
HK (1) HK1112268A1 (ja)
RU (1) RU2446236C2 (ja)
WO (1) WO2006040359A1 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4573713B2 (ja) * 2005-07-01 2010-11-04 株式会社フジクラ 単結晶の製造方法及び単結晶の製造装置
US8101020B2 (en) 2005-10-14 2012-01-24 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
US8361226B2 (en) * 2006-03-29 2013-01-29 Sumitomo Electric Industries, Ltd. III-nitride single-crystal growth method
EP2314738A4 (en) * 2008-07-01 2014-08-13 Sumitomo Electric Industries PROCESS FOR PREPARING AN ALXGA (1-X) N-CRYSTAL, ALXGA (1-X) N-CRYSTAL AND OPTICS
WO2010122801A1 (ja) * 2009-04-24 2010-10-28 独立行政法人産業技術総合研究所 窒化アルミニウム単結晶の製造装置、窒化アルミニウム単結晶の製造方法および窒化アルミニウム単結晶
CN102443842A (zh) * 2011-05-05 2012-05-09 中国科学院福建物质结构研究所 一种AlGaN单晶制备方法
US20140264388A1 (en) * 2013-03-15 2014-09-18 Nitride Solutions Inc. Low carbon group-iii nitride crystals
JP6187503B2 (ja) * 2015-02-26 2017-08-30 株式会社豊田中央研究所 金属蒸気供給装置、金属／金属化合物製造装置、ＧａＮ単結晶の製造方法、及びナノ粒子の製造方法
CN104878451B (zh) * 2015-06-16 2017-07-28 北京大学东莞光电研究院 一种氮化物单晶生长装置
CN105977135B (zh) * 2016-05-19 2018-07-06 西安电子科技大学 基于二硫化锡和磁控溅射氮化铝的氮化镓生长方法
CN105810562B (zh) * 2016-05-19 2018-05-25 西安电子科技大学 基于二硫化钼和磁控溅射氮化铝的氮化镓生长方法
CN105861987B (zh) * 2016-05-19 2019-02-19 西安电子科技大学 基于六方氮化硼和磁控溅射氮化铝的氮化镓生长方法
CN105931946B (zh) * 2016-05-19 2018-06-26 西安电子科技大学 基于黑磷和磁控溅射氮化铝的氮化镓生长方法
CN105869998B (zh) * 2016-05-19 2018-07-06 西安电子科技大学 基于二硒化锡和磁控溅射氮化铝的氮化镓生长方法
CN108796611A (zh) * 2018-07-06 2018-11-13 孟静 氮化镓单晶生长方法
CN114232083B (zh) * 2021-12-22 2023-07-21 中国科学院苏州纳米技术与纳米仿生研究所 二维氮化镓晶体的制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1160162A (en) * 1967-01-02 1969-07-30 Monsanto Co Apparatus and method for production of Epitaxial Films
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
JP3633187B2 (ja) * 1997-02-28 2005-03-30 ヤマハ株式会社 窒素を含むｉｉｉ−ｖ族化合物半導体膜の製造方法
PL186905B1 (pl) * 1997-06-05 2004-03-31 Cantrum Badan Wysokocisnieniow Sposób wytwarzania wysokooporowych kryształów objętościowych GaN
RU2132890C1 (ru) * 1997-12-09 1999-07-10 Закрытое акционерное общество "Полупроводниковые приборы" Способ получения эпитаксиальных структур нитридов элементов группы a3
JPH11209199A (ja) * 1998-01-26 1999-08-03 Sumitomo Electric Ind Ltd ＧａＮ単結晶の合成方法
WO2000068470A1 (en) * 1999-05-07 2000-11-16 Cbl Technologies, Inc. Magnesium-doped iii-v nitrides & methods
US6592663B1 (en) * 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
GB2350927A (en) * 1999-06-12 2000-12-13 Sharp Kk A method growing nitride semiconductor layer by molecular beam epitaxy
JP4734786B2 (ja) * 2001-07-04 2011-07-27 日亜化学工業株式会社 窒化ガリウム系化合物半導体基板、及びその製造方法
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
JP2003342716A (ja) * 2002-05-27 2003-12-03 Sumitomo Electric Ind Ltd ＧａＮ結晶の成長方法
JP2004134620A (ja) * 2002-10-11 2004-04-30 Yamaha Corp 窒化ガリウムエピタキシー法
CN1228478C (zh) * 2002-11-13 2005-11-23 中国科学院物理研究所 制备氮化镓单晶薄膜的方法
JP2004288964A (ja) * 2003-03-24 2004-10-14 Sumitomo Electric Ind Ltd ＧａＮ結晶の成長方法

Also Published As

Publication number Publication date
CN101080516B (zh) 2011-06-08
EP1805353A1 (de) 2007-07-11
DE102004050806A1 (de) 2006-11-16
KR20070084283A (ko) 2007-08-24
CA2583592C (en) 2013-03-12
ATE541963T1 (de) 2012-02-15
US20090199763A1 (en) 2009-08-13
CN101080516A (zh) 2007-11-28
RU2446236C2 (ru) 2012-03-27
RU2007118155A (ru) 2008-11-27
EP1805353B1 (de) 2012-01-18
WO2006040359A1 (de) 2006-04-20
CA2583592A1 (en) 2006-04-20
JP2008516877A (ja) 2008-05-22

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20151017