HK1002337A1 - Process for producing storage capacitors for dram cells - Google Patents

Process for producing storage capacitors for dram cells

Info

Publication number
HK1002337A1
HK1002337A1 HK98101321A HK98101321A HK1002337A1 HK 1002337 A1 HK1002337 A1 HK 1002337A1 HK 98101321 A HK98101321 A HK 98101321A HK 98101321 A HK98101321 A HK 98101321A HK 1002337 A1 HK1002337 A1 HK 1002337A1
Authority
HK
Hong Kong
Prior art keywords
dummies
pct
storage
dram cells
storage capacitors
Prior art date
Application number
HK98101321A
Other languages
English (en)
Inventor
Wolfgang Roesner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of HK1002337A1 publication Critical patent/HK1002337A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK98101321A 1992-07-08 1998-02-20 Process for producing storage capacitors for dram cells HK1002337A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4222467A DE4222467C1 (xx) 1992-07-08 1992-07-08
PCT/DE1993/000516 WO1994001891A1 (de) 1992-07-08 1993-06-15 Verfahren zur herstellung von speicherkondensatoren für dram-zellen

Publications (1)

Publication Number Publication Date
HK1002337A1 true HK1002337A1 (en) 1998-08-14

Family

ID=6462779

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98101321A HK1002337A1 (en) 1992-07-08 1998-02-20 Process for producing storage capacitors for dram cells

Country Status (9)

Country Link
US (1) US5496757A (xx)
EP (1) EP0649566B1 (xx)
JP (1) JP3330605B2 (xx)
KR (1) KR100309614B1 (xx)
AT (1) ATE160652T1 (xx)
DE (2) DE4222467C1 (xx)
HK (1) HK1002337A1 (xx)
TW (1) TW358242B (xx)
WO (1) WO1994001891A1 (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19640273C1 (de) * 1996-09-30 1998-03-12 Siemens Ag Verfahren zur Herstellung barrierenfreier Halbleiterspeicheranordnungen
US6395613B1 (en) * 2000-08-30 2002-05-28 Micron Technology, Inc. Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
US5998256A (en) 1996-11-01 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry
KR100227070B1 (ko) * 1996-11-04 1999-10-15 구본준 커패시터 및 그의 제조방법
US6590250B2 (en) 1997-11-25 2003-07-08 Micron Technology, Inc. DRAM capacitor array and integrated device array of substantially identically shaped devices
JP2000077619A (ja) * 1998-08-27 2000-03-14 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6157067A (en) 1999-01-04 2000-12-05 International Business Machines Corporation Metal oxide semiconductor capacitor utilizing dummy lithographic patterns
KR100338959B1 (ko) * 2000-08-31 2002-06-01 박종섭 반도체 소자의 커패시터 하부전극 제조방법
KR100502410B1 (ko) * 2002-07-08 2005-07-19 삼성전자주식회사 디램 셀들
US7468323B2 (en) * 2004-02-27 2008-12-23 Micron Technology, Inc. Method of forming high aspect ratio structures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62286270A (ja) * 1986-06-05 1987-12-12 Sony Corp 半導体メモリ装置
IT1245495B (it) * 1990-01-26 1994-09-27 Mitsubishi Electric Corp Memoria ad accesso casuale dinamica avente un condensatore del tipo impilato e procedimento di fabbricazione di essa
DD299990A5 (de) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
JP2519569B2 (ja) * 1990-04-27 1996-07-31 三菱電機株式会社 半導体記憶装置およびその製造方法
JPH0629483A (ja) * 1991-04-29 1994-02-04 Micron Technol Inc スタック型ｉセルキャパシタおよびその製造方法

Also Published As

Publication number Publication date
KR950702748A (ko) 1995-07-29
ATE160652T1 (de) 1997-12-15
WO1994001891A1 (de) 1994-01-20
US5496757A (en) 1996-03-05
TW358242B (en) 1999-05-11
JP3330605B2 (ja) 2002-09-30
JPH07509346A (ja) 1995-10-12
DE4222467C1 (xx) 1993-06-24
KR100309614B1 (ko) 2002-08-27
EP0649566B1 (de) 1997-11-26
DE59307748D1 (de) 1998-01-08
EP0649566A1 (de) 1995-04-26

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)