GB9721954D0 - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB9721954D0 GB9721954D0 GBGB9721954.7A GB9721954A GB9721954D0 GB 9721954 D0 GB9721954 D0 GB 9721954D0 GB 9721954 A GB9721954 A GB 9721954A GB 9721954 D0 GB9721954 D0 GB 9721954D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9721954A GB2330452A (en) | 1997-10-16 | 1997-10-16 | Arrangement for inhibiting dielectric polarisation in high voltage devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9721954A GB2330452A (en) | 1997-10-16 | 1997-10-16 | Arrangement for inhibiting dielectric polarisation in high voltage devices |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9721954D0 true GB9721954D0 (en) | 1997-12-17 |
GB2330452A GB2330452A (en) | 1999-04-21 |
Family
ID=10820674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9721954A Withdrawn GB2330452A (en) | 1997-10-16 | 1997-10-16 | Arrangement for inhibiting dielectric polarisation in high voltage devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2330452A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19848828C2 (en) * | 1998-10-22 | 2001-09-13 | Infineon Technologies Ag | Semiconductor device with low forward voltage and high blocking capability |
CN106803515A (en) * | 2015-11-26 | 2017-06-06 | 宁波达新半导体有限公司 | The terminal structure and its manufacture method of semiconductor power device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4580156A (en) * | 1983-12-30 | 1986-04-01 | At&T Bell Laboratories | Structured resistive field shields for low-leakage high voltage devices |
JP2585331B2 (en) * | 1986-12-26 | 1997-02-26 | 株式会社東芝 | High breakdown voltage planar element |
US5266831A (en) * | 1991-11-12 | 1993-11-30 | Motorola, Inc. | Edge termination structure |
JP2850694B2 (en) * | 1993-03-10 | 1999-01-27 | 株式会社日立製作所 | High breakdown voltage planar type semiconductor device |
-
1997
- 1997-10-16 GB GB9721954A patent/GB2330452A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2330452A (en) | 1999-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |