GB9823778D0 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB9823778D0
GB9823778D0 GBGB9823778.7A GB9823778A GB9823778D0 GB 9823778 D0 GB9823778 D0 GB 9823778D0 GB 9823778 A GB9823778 A GB 9823778A GB 9823778 D0 GB9823778 D0 GB 9823778D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9823778.7A
Other versions
GB2343294A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to GB9823778A priority Critical patent/GB2343294A/en
Publication of GB9823778D0 publication Critical patent/GB9823778D0/en
Publication of GB2343294A publication Critical patent/GB2343294A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02378Silicon carbide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
GB9823778A 1998-10-31 1998-10-31 Lattice-matched semiconductor devices Withdrawn GB2343294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9823778A GB2343294A (en) 1998-10-31 1998-10-31 Lattice-matched semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9823778A GB2343294A (en) 1998-10-31 1998-10-31 Lattice-matched semiconductor devices

Publications (2)

Publication Number Publication Date
GB9823778D0 true GB9823778D0 (en) 1998-12-23
GB2343294A GB2343294A (en) 2000-05-03

Family

ID=10841570

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9823778A Withdrawn GB2343294A (en) 1998-10-31 1998-10-31 Lattice-matched semiconductor devices

Country Status (1)

Country Link
GB (1) GB2343294A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534797B1 (en) 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
US20050133816A1 (en) * 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
KR101216622B1 (en) 2004-11-01 2012-12-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking
FR2929445B1 (en) * 2008-03-25 2010-05-21 Picogiga Internat PROCESS FOR PRODUCING A GALLIUM NITRIDE LAYER OR GALLIUM NITRIDE AND ALUMINUM
RU2434315C1 (en) * 2010-03-15 2011-11-20 Юрий Георгиевич Шретер Light-emitting device with heterophase boundaries

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0377940B1 (en) * 1989-01-13 1994-11-17 Kabushiki Kaisha Toshiba Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element
JP2809692B2 (en) * 1989-04-28 1998-10-15 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
JP3100644B2 (en) * 1991-02-22 2000-10-16 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
SE9404452D0 (en) * 1994-12-22 1994-12-22 Abb Research Ltd Semiconductor device having an insulated gate

Also Published As

Publication number Publication date
GB2343294A (en) 2000-05-03

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)