GB937368A - A process for the production of a strip-like length of ultra-pure semi-conductor material, by dendritic growth - Google Patents
A process for the production of a strip-like length of ultra-pure semi-conductor material, by dendritic growthInfo
- Publication number
- GB937368A GB937368A GB3537861A GB3537861A GB937368A GB 937368 A GB937368 A GB 937368A GB 3537861 A GB3537861 A GB 3537861A GB 3537861 A GB3537861 A GB 3537861A GB 937368 A GB937368 A GB 937368A
- Authority
- GB
- United Kingdom
- Prior art keywords
- coil
- rod
- effected
- molten
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
<PICT:0937368/III/1> A dendritic crystal 13 is pulled from the molten tip 14 of a vertical rod 2, relative movement being effected between rod 2 and an induction heating coil 10 as pulling proceeds. Coil 1 may be fed with alternating current of 4 mc/s. Cooling of and support for the molten tip may be effected with the aid of an induction coil 15 in series with and in phase opposition to coil 10. Coil 15 may be fed with alternating current of 10 kc/s. Instead of compensating coil 15, a compensating cylinder of silver which is water-cooled (Fig. 2, not shown) may be employed. Additional cooling may be effected by means of hydrogen or helium from nozzles 17 and 18. An incandescent zone may first be formed in a connected carbon rod 3 by induction heating, the incandescent zone passed into rod 2 and converted there into a molten zone. One end of rod 2 may be rotated during pulling. Rod 2 may be of silicon, germanium, gallium arsenide, indium phosphide, aluminium antimonide, and indium antimonide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1960S0070628 DE1242578B (en) | 1960-09-29 | 1960-09-29 | Device for the production of ribbon-shaped, dendritically grown, high-purity semiconductor crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB937368A true GB937368A (en) | 1963-09-18 |
Family
ID=7501881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3537861A Expired GB937368A (en) | 1960-09-29 | 1961-09-29 | A process for the production of a strip-like length of ultra-pure semi-conductor material, by dendritic growth |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE608626A (en) |
| CH (1) | CH408875A (en) |
| DE (1) | DE1242578B (en) |
| GB (1) | GB937368A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2570088A1 (en) * | 1984-09-12 | 1986-03-14 | Us Energy | APPARATUS AND METHOD FOR HORIZONTALLY GROWING CRYSTALS OF SHEET SILICON WITHOUT CRUSH |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10328859B4 (en) * | 2003-06-20 | 2007-09-27 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Method and apparatus for pulling single crystals by zone pulling |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE500569A (en) * | 1950-01-13 | |||
| AT194444B (en) * | 1953-02-26 | 1958-01-10 | Siemens Ag | Method and device for treating an elongated semiconductor crystal arrangement |
| US2905798A (en) * | 1958-09-15 | 1959-09-22 | Lindberg Eng Co | Induction heating apparatus |
-
1960
- 1960-09-29 DE DE1960S0070628 patent/DE1242578B/en active Pending
-
1961
- 1961-07-18 CH CH842561A patent/CH408875A/en unknown
- 1961-09-28 BE BE608626A patent/BE608626A/en unknown
- 1961-09-29 GB GB3537861A patent/GB937368A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2570088A1 (en) * | 1984-09-12 | 1986-03-14 | Us Energy | APPARATUS AND METHOD FOR HORIZONTALLY GROWING CRYSTALS OF SHEET SILICON WITHOUT CRUSH |
Also Published As
| Publication number | Publication date |
|---|---|
| BE608626A (en) | 1962-03-28 |
| DE1242578B (en) | 1967-06-22 |
| CH408875A (en) | 1966-03-15 |
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