GB966811A - Improvements in or relating to the preparation of crystalline semi-conductors - Google Patents
Improvements in or relating to the preparation of crystalline semi-conductorsInfo
- Publication number
- GB966811A GB966811A GB21148/62A GB2114862A GB966811A GB 966811 A GB966811 A GB 966811A GB 21148/62 A GB21148/62 A GB 21148/62A GB 2114862 A GB2114862 A GB 2114862A GB 966811 A GB966811 A GB 966811A
- Authority
- GB
- United Kingdom
- Prior art keywords
- temperature
- mixture
- vessel
- gas
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
In a process for depositing Si layers on a parent crystal of Si by disproportionation of the di-iodide to give the tetra iodide and Si, the ratio of SiI4 to SiI2 in the reaction gas is restored to its original value after each deposition stage by passing the reaction gas over Si at a higher temperature than the deposition temperature. In the Figure a gas (preferably inert such as A or N2) is passed in at E it picks up iodine J which is led to vessel B where it reacts with the silicon G to give a SiI4SiI2 mixture at a temperature of 1000-1100 DEG C. This mixture is then passed to vessel C where Si is deposited on parent crystals K, which are at a temperature of 700-800 DEG C. The SiI4SiI2 ratio is then restored to its original value by passing the depleted mixture into vessel D and contacting it with more silicon G preferably at the same temperature <PICT:0966811/C1/1> as in vessel B, the temperature in the second deposition chamber F preferably being the same as in chamber C. The process can be repeated as many times as desired and improvements described consist in having parallel circuits and/or circulatory gas flow. Prior to starting the process the apparatus is evacuated or flushed with an inert oxygen free gas to remove all traces of air and water vapour. Suitable doping agents can be included in the reaction mixture. When hydrogen is present in the gas mixture the regeneration temperature is lower (e.g. 100-200 DEG C. lower) than the separation temperature, e.g. 900-1100 DEG C.ALSO:<PICT:0966811/C6-C7/1> In a process for depositing Ge layers on a parent crystal of Ge by disproportionation of the di-iodide to give the tetraiodide and Ge, the ratio of GeI4 to GeI2 in the reaction gas is restored to its original value after each deposition stage by passing the reaction gas over Ge at a higher temperature than the deposition temperature. In the Figure, a gas (preferably inert such as N2 or A) is passed in at E, it picks up iodine J which is led to vessel B where it reacts with the germanium G to give a GeI4-GeI2 mixture at a temperature of 500-800 DEG C. This mixture is then passed to vessel C where Ge is deposited on parent crystal K1 which are at a temperature of 400-430 DEG C. The GeI4-GeI2 ratio is then restored to its original value by passing the depleted mixture into vessel D and contacting it with more germanium G preferably at the same temperature (500-800 DEG C.) as in vessel B. The temperature in the second deposition chamber F is preferably the same as in chamber C i.e. 400-430 DEG C. The process can be repeated as many times as desired, and improvements described consist in having parallel cricuits and/or circulating gas flow. Prior to starting the process the apparatus is evacuated or flushed with an inert oxygen-free gas to remove all traces of air and water vapour. Suitable doping agents can be included in the reaction mixture. When hydrogen is present in the gas mixture the regeneration temperature is lower (100-200 DEG C. lower) than the separation temperature (e.g. 700-900 DEG C.).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES74176A DE1204197B (en) | 1961-06-02 | 1961-06-02 | Process for producing crystalline, in particular single-crystalline layers of germanium or silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
GB966811A true GB966811A (en) | 1964-08-19 |
Family
ID=7504469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB21148/62A Expired GB966811A (en) | 1961-06-02 | 1962-06-01 | Improvements in or relating to the preparation of crystalline semi-conductors |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE618408A (en) |
CH (1) | CH439233A (en) |
DE (1) | DE1204197B (en) |
GB (1) | GB966811A (en) |
NL (1) | NL278620A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1288163A3 (en) * | 2001-08-28 | 2010-08-04 | Midwest Research Institute | Purified silicon production system |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE509317A (en) * | 1951-03-07 | 1900-01-01 |
-
0
- NL NL278620D patent/NL278620A/xx unknown
-
1961
- 1961-06-02 DE DES74176A patent/DE1204197B/en active Pending
-
1962
- 1962-02-15 CH CH185662A patent/CH439233A/en unknown
- 1962-06-01 GB GB21148/62A patent/GB966811A/en not_active Expired
- 1962-06-01 BE BE618408A patent/BE618408A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1288163A3 (en) * | 2001-08-28 | 2010-08-04 | Midwest Research Institute | Purified silicon production system |
Also Published As
Publication number | Publication date |
---|---|
BE618408A (en) | 1962-12-03 |
CH439233A (en) | 1967-07-15 |
NL278620A (en) | 1900-01-01 |
DE1204197B (en) | 1965-11-04 |
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