GB8910236D0 - Apparatus for the gas-phase processing of workpieces - Google Patents
Apparatus for the gas-phase processing of workpiecesInfo
- Publication number
- GB8910236D0 GB8910236D0 GB898910236A GB8910236A GB8910236D0 GB 8910236 D0 GB8910236 D0 GB 8910236D0 GB 898910236 A GB898910236 A GB 898910236A GB 8910236 A GB8910236 A GB 8910236A GB 8910236 D0 GB8910236 D0 GB 8910236D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- workpieces
- gas
- phase processing
- phase
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DD31544788A DD271776A1 (en) | 1988-05-06 | 1988-05-06 | DEVICE FOR GAS SUPPLY AND REMOVAL FOR THE GAS PHASE PROCESSING OF WORKPIECES |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8910236D0 true GB8910236D0 (en) | 1989-06-21 |
GB2219311A GB2219311A (en) | 1989-12-06 |
GB2219311B GB2219311B (en) | 1992-04-08 |
Family
ID=5598988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8910236A Expired - Fee Related GB2219311B (en) | 1988-05-06 | 1989-05-04 | Apparatus for use in introducing gas into a reaction chamber and discharging gas from the chamber for the gas-phase processing of workpieces |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH0230127A (en) |
DD (1) | DD271776A1 (en) |
DE (1) | DE3909161A1 (en) |
FR (1) | FR2631164B3 (en) |
GB (1) | GB2219311B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4006411C2 (en) * | 1990-03-01 | 1997-05-28 | Leybold Ag | Device for applying thin layers on a substrate |
CA2060917A1 (en) * | 1991-03-12 | 1992-09-13 | Milam Pender | Plasma enhanced chemical vapor deposition device |
US5647911A (en) * | 1993-12-14 | 1997-07-15 | Sony Corporation | Gas diffuser plate assembly and RF electrode |
GB9411911D0 (en) | 1994-06-14 | 1994-08-03 | Swan Thomas & Co Ltd | Improvements in or relating to chemical vapour deposition |
FR2727693A1 (en) * | 1994-12-06 | 1996-06-07 | Centre Nat Rech Scient | REACTOR FOR THE DEPOSITION OF THIN LAYERS IN STEAM PHASE (CVD) |
JP3380091B2 (en) * | 1995-06-09 | 2003-02-24 | 株式会社荏原製作所 | Reactive gas injection head and thin film vapor phase growth apparatus |
US5614026A (en) * | 1996-03-29 | 1997-03-25 | Lam Research Corporation | Showerhead for uniform distribution of process gas |
GB9712400D0 (en) * | 1997-06-16 | 1997-08-13 | Trikon Equip Ltd | Shower head |
US20090095221A1 (en) * | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
KR100936059B1 (en) * | 2009-07-20 | 2010-01-08 | (주)네오세라 | Gas injector producing method for semiconductor wafer deposition equipments and gas injector |
US20110256692A1 (en) | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
TWI534291B (en) | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | Showerhead assembly |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
-
1988
- 1988-05-06 DD DD31544788A patent/DD271776A1/en not_active IP Right Cessation
-
1989
- 1989-03-21 DE DE19893909161 patent/DE3909161A1/en not_active Withdrawn
- 1989-04-24 FR FR8905397A patent/FR2631164B3/en not_active Expired - Fee Related
- 1989-05-02 JP JP11228289A patent/JPH0230127A/en active Pending
- 1989-05-04 GB GB8910236A patent/GB2219311B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3909161A1 (en) | 1989-11-16 |
FR2631164B3 (en) | 1990-04-27 |
JPH0230127A (en) | 1990-01-31 |
GB2219311B (en) | 1992-04-08 |
DD271776A1 (en) | 1989-09-13 |
FR2631164A3 (en) | 1989-11-10 |
GB2219311A (en) | 1989-12-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19930504 |