GB8819748D0 - Transistor - Google Patents
TransistorInfo
- Publication number
- GB8819748D0 GB8819748D0 GB888819748A GB8819748A GB8819748D0 GB 8819748 D0 GB8819748 D0 GB 8819748D0 GB 888819748 A GB888819748 A GB 888819748A GB 8819748 A GB8819748 A GB 8819748A GB 8819748 D0 GB8819748 D0 GB 8819748D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB878719842A GB8719842D0 (en) | 1987-08-21 | 1987-08-21 | Transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8819748D0 true GB8819748D0 (en) | 1988-09-21 |
GB2208967A GB2208967A (en) | 1989-04-19 |
Family
ID=10622645
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878719842A Pending GB8719842D0 (en) | 1987-08-21 | 1987-08-21 | Transistor |
GB8819748A Withdrawn GB2208967A (en) | 1987-08-21 | 1988-08-19 | Junction field effect transistor |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878719842A Pending GB8719842D0 (en) | 1987-08-21 | 1987-08-21 | Transistor |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB8719842D0 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7642566B2 (en) * | 2006-06-12 | 2010-01-05 | Dsm Solutions, Inc. | Scalable process and structure of JFET for small and decreasing line widths |
US20080001183A1 (en) * | 2005-10-28 | 2008-01-03 | Ashok Kumar Kapoor | Silicon-on-insulator (SOI) junction field effect transistor and method of manufacture |
US7646233B2 (en) | 2006-05-11 | 2010-01-12 | Dsm Solutions, Inc. | Level shifting circuit having junction field effect transistors |
US7764137B2 (en) | 2006-09-28 | 2010-07-27 | Suvolta, Inc. | Circuit and method for generating electrical solutions with junction field effect transistors |
US7525163B2 (en) | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
US20080265936A1 (en) * | 2007-04-27 | 2008-10-30 | Dsm Solutions, Inc. | Integrated circuit switching device, structure and method of manufacture |
US7692220B2 (en) | 2007-05-01 | 2010-04-06 | Suvolta, Inc. | Semiconductor device storage cell structure, method of operation, and method of manufacture |
US7727821B2 (en) | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Image sensing cell, device, method of operation, and method of manufacture |
US7629812B2 (en) | 2007-08-03 | 2009-12-08 | Dsm Solutions, Inc. | Switching circuits and methods for programmable logic devices |
US8035139B2 (en) | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
US7710148B2 (en) | 2008-06-02 | 2010-05-04 | Suvolta, Inc. | Programmable switch circuit and method, method of manufacture, and devices and systems including the same |
US7943971B1 (en) | 2008-12-17 | 2011-05-17 | Suvolta, Inc. | Junction field effect transistor (JFET) structure having top-to-bottom gate tie and method of manufacture |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL161306C (en) * | 1971-05-28 | 1980-01-15 | Fujitsu Ltd | METHOD FOR MANUFACTURING FIELD-EFFECT TRANSFORMERS WITH INSULATED CONTROL ELECTRODES |
GB2057760B (en) * | 1979-08-30 | 1983-09-28 | Seiko Instr & Electronics | Integrated circuit device and method of making the same |
-
1987
- 1987-08-21 GB GB878719842A patent/GB8719842D0/en active Pending
-
1988
- 1988-08-19 GB GB8819748A patent/GB2208967A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2208967A (en) | 1989-04-19 |
GB8719842D0 (en) | 1987-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |