GB2202373B - Field effect transistor structure - Google Patents
Field effect transistor structureInfo
- Publication number
- GB2202373B GB2202373B GB8706564A GB8706564A GB2202373B GB 2202373 B GB2202373 B GB 2202373B GB 8706564 A GB8706564 A GB 8706564A GB 8706564 A GB8706564 A GB 8706564A GB 2202373 B GB2202373 B GB 2202373B
- Authority
- GB
- United Kingdom
- Prior art keywords
- field effect
- effect transistor
- transistor structure
- field
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45376—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using junction FET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8706564A GB2202373B (en) | 1987-03-19 | 1987-03-19 | Field effect transistor structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8706564A GB2202373B (en) | 1987-03-19 | 1987-03-19 | Field effect transistor structure |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8706564D0 GB8706564D0 (en) | 1987-04-23 |
GB2202373A GB2202373A (en) | 1988-09-21 |
GB2202373B true GB2202373B (en) | 1990-03-28 |
Family
ID=10614254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8706564A Expired - Fee Related GB2202373B (en) | 1987-03-19 | 1987-03-19 | Field effect transistor structure |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2202373B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0891651A2 (en) * | 1996-12-20 | 1999-01-20 | Koninklijke Philips Electronics N.V. | Amplifier with improved output voltage swing |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0146430A2 (en) * | 1983-11-08 | 1985-06-26 | Thomson-Csf | Field-effect transistor having a regulable threshold voltage, and integrated circuit comprising that transistor |
EP0176754A1 (en) * | 1984-08-27 | 1986-04-09 | Sumitomo Electric Industries Limited | Schottky-gate field effect transistor |
-
1987
- 1987-03-19 GB GB8706564A patent/GB2202373B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0146430A2 (en) * | 1983-11-08 | 1985-06-26 | Thomson-Csf | Field-effect transistor having a regulable threshold voltage, and integrated circuit comprising that transistor |
EP0176754A1 (en) * | 1984-08-27 | 1986-04-09 | Sumitomo Electric Industries Limited | Schottky-gate field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
GB8706564D0 (en) | 1987-04-23 |
GB2202373A (en) | 1988-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0233725A3 (en) | Field effect transistor | |
EP0218529A3 (en) | Distributed field effect transistor structure | |
EP0247386A3 (en) | Lateral transistor | |
EP0214047A3 (en) | Field effect transistor | |
GB8706275D0 (en) | Gate circuit | |
EP0249204A3 (en) | Field effect transistor | |
EP0306258A3 (en) | Transistor | |
GB8719842D0 (en) | Transistor | |
EP0228624A3 (en) | Field effect transistor | |
GB2156579B (en) | Field effect transistors | |
GB8715959D0 (en) | Field effect transistors | |
GB2180688B (en) | Transistors | |
GB8322625D0 (en) | Field effect transistor | |
KR960003369B1 (en) | Transistor arrangement | |
GB2222306B (en) | Field effect transistor devices | |
EP0405564A3 (en) | Field effect transistor | |
GB8601830D0 (en) | Fabricated transistors | |
GB8318320D0 (en) | Transistor structure | |
EP0203516A3 (en) | Field effect transistor | |
GB8611580D0 (en) | Transistors | |
GB2202373B (en) | Field effect transistor structure | |
EP0323158A3 (en) | Field effect transistor | |
GB8725943D0 (en) | Field effect transistor arrangement | |
GB8704191D0 (en) | Gaasfield effect transistor | |
GB8619426D0 (en) | Transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |