GB875192A - Improvements in or relating to magnetic memory elements - Google Patents

Improvements in or relating to magnetic memory elements

Info

Publication number
GB875192A
GB875192A GB27016/58A GB2701658A GB875192A GB 875192 A GB875192 A GB 875192A GB 27016/58 A GB27016/58 A GB 27016/58A GB 2701658 A GB2701658 A GB 2701658A GB 875192 A GB875192 A GB 875192A
Authority
GB
United Kingdom
Prior art keywords
film
field
transverse
conductor
easy direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27016/58A
Inventor
Ernest Franklin
Thomas Henry O'dell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Atomic Energy Authority
Original Assignee
UK Atomic Energy Authority
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL242562D priority Critical patent/NL242562A/xx
Application filed by UK Atomic Energy Authority filed Critical UK Atomic Energy Authority
Priority to GB27016/58A priority patent/GB875192A/en
Priority to FR803319A priority patent/FR1233906A/en
Publication of GB875192A publication Critical patent/GB875192A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)

Abstract

875,192. Magnetic storage devices. UNITED KINGDOM ATOMIC ENERGY AUTHORITY. Aug. 13, 1959 [Aug. 22, 1958], No. 27016/58. Class 38 (2). [Also in Group XXXIX] A magnetic memory element comprises a thin nickel iron film 2 (Fig. 5) deposited on a drive conductor 1 and a transverse output winding 3, the film being suitable for switching by domain rotation and having an easy direction of magnetization. High reversal speed is obtained by using a field in the easy direction together with a field at right angles thereto. This may be obtained by applying the latter as an external field He along the axis of the drive conductor when the easy direction of magnetization is circumferential or by using a second transverse winding carrying a pulsed or steady current or by making the film with an easy direction of magnetization at a predetermined angle to a tangential line normal to a plane containing the conductor axis. The transverse conductor can be a strip of width comparable with the length of the film and may not surround the film completely (Figs. 6 and 7, not shown). A matrix store may be formed by a number of wires 1, 1<SP>1</SP> (Fig. 4) each carrying a number of films 2, 21 and windings 3, 31 and each forming a " word " wire. The transverse field component for fast switching is provided by coil 4. A separate inhibiting winding may be provided, the inhibiting field neutralizing field He and so increasing switching time that with a suitable drive width pulse there is little disturbance in the inhibited cores. The film may be deposited as described in Specification 859,725.
GB27016/58A 1958-08-22 1958-08-22 Improvements in or relating to magnetic memory elements Expired GB875192A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
NL242562D NL242562A (en) 1958-08-22
GB27016/58A GB875192A (en) 1958-08-22 1958-08-22 Improvements in or relating to magnetic memory elements
FR803319A FR1233906A (en) 1958-08-22 1959-08-21 Magnetic memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB27016/58A GB875192A (en) 1958-08-22 1958-08-22 Improvements in or relating to magnetic memory elements

Publications (1)

Publication Number Publication Date
GB875192A true GB875192A (en) 1961-08-16

Family

ID=10252810

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27016/58A Expired GB875192A (en) 1958-08-22 1958-08-22 Improvements in or relating to magnetic memory elements

Country Status (3)

Country Link
FR (1) FR1233906A (en)
GB (1) GB875192A (en)
NL (1) NL242562A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL292139A (en) * 1962-05-21
DE1449395B1 (en) * 1962-09-21 1970-09-03 Kokusai Denshin Denwa Co Ltd Magnetic storage matrix
NL130452C (en) * 1963-07-11
US3311893A (en) * 1963-08-29 1967-03-28 Sperry Rand Corp Memory organization wherein only new data bits which are different from the old are recorded
GB1052290A (en) * 1963-12-30
DE1291376B (en) * 1964-03-17 1969-03-27 Maeda Hisao Magnetic storage

Also Published As

Publication number Publication date
NL242562A (en)
FR1233906A (en) 1960-10-13

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